BAR65-02 [INFINEON]

Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners); 硅射频开关二极管的初步数据(低损耗,低电容PIN二极管开关波段电视调谐器)
BAR65-02
型号: BAR65-02
厂家: Infineon    Infineon
描述:

Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners)
硅射频开关二极管的初步数据(低损耗,低电容PIN二极管开关波段电视调谐器)

二极管 开关 射频开关 电视
文件: 总3页 (文件大小:18K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAR 65-02W  
Silicon RF Switching Diode  
Preliminary data  
Low loss, low capacitance PIN-diode  
Band switch for TV-tuners  
Series diode for mobile communication  
transmit-receiver switch  
2
1
VES05991  
Type  
Marking Ordering Code  
Q62702-A1216  
Pin Configuration  
Package  
BAR 65-02W  
N
1 = C  
2 = A  
SCD-80  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Diode reverse voltage  
Forward current  
V
30  
R
I
100  
mA  
F
Operating temperature range  
Storage temperature  
T
T
- 55 ...+125  
- 55 ...+150  
°C  
op  
stg  
Semiconductor Group  
Semiconductor Group  
1
Jun-18-1998  
1998-11-01  
1
BAR 65-02W  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC characteristics  
Reverse current  
I
-
-
-
20  
1
nA  
V
R
V = 20 V  
R
Forward voltage  
V
0.93  
F
I = 100 mA  
F
AC characteristics  
Diode capacitance  
C
pF  
T
V = 1 V, f = 1 MHz  
-
-
0.6  
0.9  
0.8  
R
V = 3 V, f = 1 MHz  
0.57  
R
Forward resistance  
r
f
I = 5 mA, f = 100 MHz  
-
-
0.65  
0.56  
0.95  
0.9  
F
I = 10 mA, f = 100 MHz  
F
Series inductance  
L
-
0.6  
-
nH  
s
Semiconductor Group  
Semiconductor Group  
2
Jun-18-1998  
1998-11-01  
2
BAR 65-02W  
Forward current I = f (V )  
Forward resistance r = f(I )  
f F  
F
F
T = 25°C  
f = 100MHz  
A
10 3  
mA  
3.0  
Ohm  
2.4  
10 2  
R
F
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
I
F
10 1  
10 0  
10 -1  
10 -1  
10 0  
mV  
mA  
400  
500  
600  
700  
800  
1000  
I
F
V
F
Diode capacitance C = f (V )  
Diode capacitance C = f (V )  
T R  
T
R
f = 1MHz  
f = 100MHz  
1.0  
pF  
1.0  
pF  
0.8  
0.8  
C
C
T
T
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
V
V
0
1
2
3
4
5
6
7
8
10  
0
1
2
3
4
5
6
7
8
10  
V
V
R
R
Semiconductor Group  
Semiconductor Group  
3
Jun-18-1998  
1998-11-01  
3

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