BAR65-02 [INFINEON]
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners); 硅射频开关二极管的初步数据（低损耗，低电容PIN二极管开关波段电视调谐器）
| 型号： | BAR65-02 |
| 厂家： | 
Infineon |
| 描述： | Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners) |
| 文件： | 总3页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAR 65-02W
Silicon RF Switching Diode
Preliminary data
• Low loss, low capacitance PIN-diode
• Band switch for TV-tuners
• Series diode for mobile communication
transmit-receiver switch
2
1
VES05991
Type
Marking Ordering Code
Q62702-A1216
Pin Configuration
Package
BAR 65-02W
N
1 = C
2 = A
SCD-80
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Diode reverse voltage
Forward current
V
30
R
I
100
mA
F
Operating temperature range
Storage temperature
T
T
- 55 ...+125
- 55 ...+150
°C
op
stg
Semiconductor Group
Semiconductor Group
1
Jun-18-1998
1998-11-01
1
BAR 65-02W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
Reverse current
I
-
-
-
20
1
nA
V
R
V = 20 V
R
Forward voltage
V
0.93
F
I = 100 mA
F
AC characteristics
Diode capacitance
C
pF
Ω
T
V = 1 V, f = 1 MHz
-
-
0.6
0.9
0.8
R
V = 3 V, f = 1 MHz
0.57
R
Forward resistance
r
f
I = 5 mA, f = 100 MHz
-
-
0.65
0.56
0.95
0.9
F
I = 10 mA, f = 100 MHz
F
Series inductance
L
-
0.6
-
nH
s
Semiconductor Group
Semiconductor Group
2
Jun-18-1998
1998-11-01
2
BAR 65-02W
Forward current I = f (V )
Forward resistance r = f(I )
f F
F
F
T = 25°C
f = 100MHz
A
10 3
mA
3.0
Ohm
2.4
10 2
R
F
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
F
10 1
10 0
10 -1
10 -1
10 0
mV
mA
400
500
600
700
800
1000
I
F
V
F
Diode capacitance C = f (V )
Diode capacitance C = f (V )
T R
T
R
f = 1MHz
f = 100MHz
1.0
pF
1.0
pF
0.8
0.8
C
C
T
T
0.7
0.6
0.5
0.4
0.3
0.2
0.7
0.6
0.5
0.4
0.3
0.2
V
V
0
1
2
3
4
5
6
7
8
10
0
1
2
3
4
5
6
7
8
10
V
V
R
R
Semiconductor Group
Semiconductor Group
3
Jun-18-1998
1998-11-01
3
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