BAR64V-05W-E3-18 [VISHAY]
DIODE RF PIN DUAL CC SOT323;
| 型号： | BAR64V-05W-E3-18 |
| 厂家： | 
VISHAY |
| 描述： | DIODE RF PIN DUAL CC SOT323 |
| 文件： | 总5页 (文件大小：726K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAR64V-05W
Vishay Semiconductors
www.vishay.com
RF PIN Diodes - Dual, Common Cathode in SOT-323
FEATURES
• High voltage current controlled RF resistor
• Small diode capacitance
• Low series inductance
3
• Low forward resistance
• Improved performance due to two separate dice
• Base P/N-E3 - RoHS-compliant, commercial grade
1
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• For frequencies up to 3 GHz
• RF-signal tuning
DESIGN SUPPORT TOOLS click logo to get started
• Signal attenuator and switches
• Mobile, wireless, and TV-applications
Models
Available
MECHANICAL DATA
Case: SOT-323
DESCRIPTION
Characterized by low reverse capacitance the PIN diodes
BAR64V-05W was designed for RF signal switching and
tuning. As a function of the forward bias current the forward
resistance (RF) can be adjusted over a wide range. A long
carrier life time offers low signal distortion for signals over
10 MHz up to 3 GHz. Typical applications for these PIN
diodes are switches and attenuators in wireless, mobile, and
TV-systems.
Weight: approx. 5.7 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
CIRCUIT CONFIGURATION
REMARKS
BAR64V-05W
BAR64V-05W-E3-08 or BAR64V-05W-E3-18
DW5
Common cathode
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART
TEST CONDITION
SYMBOL
VALUE
UNIT
V
Reverse voltage
Forward continuous current
VR
IF
100
100
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
150
UNIT
°C
Junction temperature
Storage temperature range
Operating temperature range
Tj
Tstg
Top
-55 to +150
-55 to +125
°C
°C
Rev. 1.6, 27-Apr-17
Document Number: 81836
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAR64V-05W
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
Forward voltage
Reverse voltage
Reverse current
IF = 50 mA
VF
VR
IR
1.1
IF = 10 μA
100
V
VR = 50 V
0.05
μA
pF
pF
pF
f = 1 MHz, VR = 0 V
f = 1 MHz, VR = 1 V
f = 1 MHz, VR = 20 V
f = 100 MHz, IF = 1 mA
f = 100 MHz, IF = 10 mA
f = 100 MHz, IF = 100 mA
IF = 10 mA, IR = 6 mA, iR = 3 mA
CD
CD
CD
rf
0.5
0.37
0.23
10
Diode capacitance
0.5
0.35
20
Differential forward resistance
rf
2
3.8
rf
0.8
1.8
1
1.35
Charge carrier lifetime
Series inductance
trr
μs
nH
LS
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100.00
100.0
f = 100 MHz
10.00
10.0
1.00
1.0
0.10
0.1
0.1
0.01
1
10
100
0.5
0.6
0.7
0.8
0.9
1.0
18342
IF- Forward Current (mA)
18326
VF - Forward Voltage (V)
Fig. 1 - Forward Resistance vs. Forward Current
Fig. 3 - Forward Current vs. Forward Voltage
0.50
12
f = 1 MHz
I
I
= 10 mA
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
8
F
=
=
6 mA
3 mA
R
i
R
6
4
2
0
- 2
- 4
- 6
- 8
0
4
8
12
16
20
24
28
- 500
500
1500
2500
3500
18334
VR - Reverse Voltage (V)
trr - Reverse Recovery Time (ns)
18338
Fig. 2 - Diode Capacitance vs. Reverse Voltage
Fig. 4 - Typical Charge Recovery Curve
Rev. 1.6, 27-Apr-17
Document Number: 81836
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAR64V-05W
Vishay Semiconductors
www.vishay.com
0
- 0.5
- 1
IF = 3mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
- 1.5
- 2
IF = 0.5 mA
- 2.5
- 3
0
0.5
1
1.5
2
2.5
3
3.5
f - Frequency (GHz)
21027
Fig. 5 - Insertion Loss of One Diode Inserted in Series
with 50 Strip Line
0
- 5
- 10
- 15
VR = 0, diode zero-biased
- 20
- 25
0
0.5
1
1.5
2
2.5
3
3.5
21028
f - Frequency ( GHz )
Fig. 6 - Isolation of One Diode Inserted in Series
with 50 Strip Line
150
100
f = 1.8 GHz
f = 0.9 GHz
50
0
0.1
1
10
IF - Forward Current (mA)
21029
Fig. 7 - Second Order Intercept Point for One Diode Inserted
in 50 Strip Line
Rev. 1.6, 27-Apr-17
Document Number: 81836
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAR64V-05W
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): SOT-323
2.2 (0.087)
2.0 (0.079)
8°
0°
0.46 (0.018)
0.26 (0.010)
0.525 (0.021) ref.
0.4 (0.016)
0.2 (0.008)
2.45 (0.096)
2.15 (0.085)
foot print recommendation:
0.65 (0.026) typ
0.6 (0.024)
1.4 (0.055)
1.2 (0.047)
Document no.: 6.541-5040.02-4
Rev. 1 - Date: 06. April 2010
21113
0.65 (0.026)
1.3 (0.051)
Rev. 1.6, 27-Apr-17
Document Number: 81836
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 09-Jul-2021
Document Number: 91000
1
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