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50N02-09 [VISHAY]

N-Channel 20-V (D-S) 175 Degree Celcious MOSFET; N通道20 -V （D -S ） 175度Celcious MOSFET
50N02-09
型号： 50N02-09
厂家： VISHAY    VISHAY
描述：

N-Channel 20-V (D-S) 175 Degree Celcious MOSFET
N通道20 -V （D -S ） 175度Celcious MOSFET
文件： 总4页 (文件大小：53K)
中文：  中文翻译
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SUD50N02-09P  
Vishay Siliconix  
N-Channel 20-V (D-S) 175_C MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D 175_C Junction Temperature  
D PWM Optimized for High Efficiency  
D 100% Rg Tested  
VDS (V)  
rDS(on) (W)  
ID (A)a  
0.0095 @ V = 10 V  
20  
15  
GS  
20  
APPLICATIONS  
0.017 @ V = 4.5 V  
GS  
D High-Side Synchronous Buck DC/DC  
Conversion  
− Desktop  
− Server  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
S
N-Channel MOSFET  
Ordering Information: SUD50N02-09P  
SUD50N02-09P—E3 (Lead Free)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
"20  
20  
DS  
GS  
V
V
T
= 25_C  
A
a
Continuous Drain Current  
I
D
T = 100_C  
C
14  
Pulsed Drain Current  
I
100  
4.3  
29  
A
DM  
a
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
S
I
AS  
L = 0.1 mH  
Single Pulse Avalanche Energy  
E
AS  
42  
mJ  
a
T
= 25_C  
= 25_C  
6.5  
A
Maximum Power Dissipation  
P
D
W
T
39.5  
C
Operating Junction and Storage Temperature Range  
T , T  
−55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
19  
40  
23  
50  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
Steady State  
_C/W  
Maximum Junction-to-Case  
3.1  
3.8  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
b. Limited by package  
Document Number: 72034  
S-41168—Rev. C, 14-Jun-04  
www.vishay.com  
1
SUD50N02-09P  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
V
= 0 V, I = 250 mA  
D
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
20  
GS  
(BR)DSS  
V
V
V
DS  
= V , I = 250 mA  
0.8  
3.0  
"100  
1
GS(th)  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
nA  
GSS  
V
= 20 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 20 V, V = 0 V, T = 125_C  
50  
DS  
GS  
J
b
On-State Drain Current  
I
V
= 5 V, V = 10 V  
50  
15  
A
D(on)  
DS  
GS  
V
= 10 V, I = 20 A  
0.008  
0.0095  
0.014  
0.017  
GS  
D
b
V
= 10 V, I = 20 A, T = 125_C  
Drain-Source On-State Resistance  
r
W
GS  
D
J
DS(on)  
V
= 4.5 V, I = 20 A  
0.0135  
GS  
D
b
Forward Transconductance  
g
fs  
V
= 15 V, I = 20 A  
S
DS  
D
Dynamica  
Input Capacitance  
C
C
1300  
470  
275  
10.5  
4.2  
4.0  
4.0  
8
iss  
V
= 0 V, V = 10 V, f = 1 MHz  
DS  
Output Capacitance  
pF  
GS  
oss  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
16  
g
c
Gate-Source Charge  
Q
Q
V
= 10 V, V = 4.5 V, I = 50 A  
nC  
gs  
gd  
DS  
GS  
D
c
Gate-Drain Charge  
Gate Resistance  
R
1.6  
6
W
g
c
Turn-On Delay Time  
t
12  
15  
40  
20  
d(on)  
c
Rise Time  
t
10  
r
V
= 10 V, R = 0.2 W  
L
GEN g  
DD  
ns  
c
I
D
^ 50 A, V  
= 10 V, R = 2.5 W  
Turn-Off Delay Time  
t
25  
d(off)  
c
Fall Time  
t
12  
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)  
Pulsed Current  
I
100  
1.5  
70  
A
V
SM  
b
Diode Forward Voltage  
V
SD  
I
F
= 50 A, V = 0 V  
1.2  
35  
GS  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 50 A, di/dt = 100 A/ms  
ns  
Notes  
a. Guaranteed by design, not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
c. Independent of operating temperature.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
100  
100  
80  
60  
40  
20  
0
V
GS  
= 10 thru 6 V  
T
= −55_C  
C
5 V  
4 V  
80  
60  
40  
20  
0
25_C  
125_C  
3 V  
0
2
4
6
8
10  
0
1
2
3
4
5
6
V
DS  
− Drain-to-Source Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 72034  
S-41168—Rev. C, 14-Jun-04  
www.vishay.com  
2
SUD50N02-09P  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Transconductance  
On-Resistance vs. Drain Current  
60  
0.030  
0.025  
0.020  
0.015  
0.010  
0.005  
0.000  
T
= −55_C  
C
50  
40  
30  
20  
10  
0
25_C  
V
GS  
= 4.5 V  
125_C  
V
GS  
= 10 V  
0
10  
20  
30  
40  
50  
0
20  
40  
60  
80  
100  
I
D
− Drain Current (A)  
I
D
− Drain Current (A)  
Capacitance  
Gate Charge  
2000  
1600  
1200  
800  
400  
0
10  
8
V
D
= 10 V  
DS  
I
= 50 A  
C
iss  
6
4
C
oss  
2
C
rss  
0
0
4
8
12  
16  
20  
0
4
8
12  
Q − Total Gate Charge (nC)  
g
16  
20  
V
− Drain-to-Source Voltage (V)  
DS  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
100  
10  
1
V
GS  
= 10 V  
I
D
= 30 A  
T = 150_C  
J
T = 25_C  
J
−50 −25  
0
25  
50  
75 100 125 150 175  
0
0.3  
V
0.6  
0.9  
1.2  
1.5  
T
− Junction Temperature (_C)  
− Source-to-Drain Voltage (V)  
J
SD  
Document Number: 72034  
S-41168—Rev. C, 14-Jun-04  
www.vishay.com  
3
SUD50N02-09P  
Vishay Siliconix  
THERMAL RATINGS  
Maximum Drain Current vs.  
Ambiemt Temperature  
Safe Operating Area  
1000  
25  
20  
15  
10  
5
Limited  
by r  
DS(on)  
10, 100 ms  
100  
10  
1 ms  
10 ms  
100 ms  
1 s  
10 s  
100 s  
dc  
1
T
= 25_C  
A
0.1  
Single Pulse  
0
0.01  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
V
DS  
− Drain-to-Source Voltage (V)  
T
A
− Ambient Temperature (_C)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.02  
0.05  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
1000  
Square Wave Pulse Duration (sec)  
Document Number: 72034  
S-41168—Rev. C, 14-Jun-04  
www.vishay.com  
4

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