50N035T [ETC]
N-Channel Field Effect Transistor; N沟道场效应晶体管
| 型号： | 50N035T |
| 厂家： | 
ETC |
| 描述： | N-Channel Field Effect Transistor |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
50N035
Description
Features
Critical DC Electrical parameters
specified at elevated Temp.
•
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for low voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
extremely low RDS(ON)
•
•
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D2 surface
mount power package with a power dissipation up to 2 Watts
VDSS = 30V
Ω
RDS (ON) = 0.013
ID = 52A
Ordering Information
Device
50N035T
50N035S
Package
TO-220
Temp.
0 to 150°C
0 to 150°C
TO-263 ( D2 )
Absolute Maximum Rating
Symbol
Parameter
Max
Unit
Drain Current
Continues
Pulsed
ID
A
52
156
Drain-Source Voltage
Gate Source Voltage
Total Power Dissipation @ TC =25°C
Derate above 25°C
30
±20
50
0.4
VDSS
VGSV
PD
V
V
W
W/°C
Operating and Storage
Temperature Range
-65 to 175
TJ
TSTG
°C
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
50N035
Electrical Characteristics (
TC = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Min Typ
Max
Units
OFF CHARACTERSTICS
Drain source breakdown
voltage
Zero Gate Voltage Drain
Current
30
BVDSS
IDSS
V
VGS=0V, ID=250µA
VDS=24V
VGS=0V
10
µA
Gate-Body Leakage Forward VGS=20V VDS=0V
Gate-Body Leakage Reverse VGS=20V VDS=0V
100
-100
IGBLF
IGBLR
nA
nA
ON CHARACTERSTICS
VDS=VGS
ID=250µA
Gate Threshold Voltage
1
3
VGS
V
0.013
0.018
VGS=10V, ID=26A
VCS=4.5V, IO=21A
Static Drain Voltage
RDS(ON)
Ω
ON-State Drain Current
Forward Tran conductance
VGS=10V
52
ID(ON)
gfs
A
32
DYNAMIC CHARACTRISTICS
Input Capacitance
Output Capacitance
Reverse Tras. Capacitance
1800
1000
500
CISS
COSS
CRSS
pF
pF
pF
VDS= 15V, VGS=0V
F=1.0 MHZ
SWITCHING CHARACTERSTICS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
25
200
50
tD(ON)
tr
td(off)
tF
V
DD=15V
ID=52A, VDS=10V
nS
RGEN=25Ω
120
SOURCE DRAIN DIODE CHRACTERISTICS
Maxim Continuous Drain source Diode Forward Current
52
IS
A
V
Drain Source Diode
Forward Voltage
VGS=0V
IS=26A
1.30
VDS (note)
THERMAI CHRACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.5
62.5
RJC
RJC
°C/W
°C/W
Note: Pulse Test: Pulse With≤ 300 µS, Duty Cycle ≤ 2.0%
- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Advance Information
- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
Preliminary Information
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
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