50N06G-F-TN3-R [UTC]
Power Field-Effect Transistor;
| 型号： | 50N06G-F-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总8页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
50N06-F
Power MOSFET
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
1
DESCRIPTION
TO-220
The UTC 50N06-F is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
TO-251
TO-252
FEATURES
* RDS(ON) < 23mΩ @ VGS = 10 V, ID = 25 A
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
1
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
50N06L-TA3-T
50N06L-TM3-R
50N06L-TN3-R
50N06G-TA3-T
50N06G-TM3-R
50N06G-TN3-R
G
G
G
TO-220
TO-251
TO-252
Tube
Tube
Tape Reel
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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50N06-F
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
60
±20
50
VGSS
V
TC = 25°C
A
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
ID
TC = 100°C
35
A
IDM
EAS
200
480
13
A
Single Pulsed (Note 3)
Repetitive (Note 2)
mJ
mJ
V/ns
W
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7
TO-220
TO-251/TO-252
120
46
Power Dissipation (TC=25°C)
PD
W
Junction Temperature
TJ
+150
-55 ~ +150
°C
°C
Operation and Storage Temperature
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by TJ
3. L=0.38mH, IAS=50A, VDD= 25V, RG=20Ω, Starting TJ=25°C
4. ISD ≤50A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
TO-220
SYMBOL
RATING
62
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θJA
TO-251/TO-252
TO-220
100
1.24
2.7
θJC
TO-251/TO-252
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50N06-F
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
ID = 250 μA,
60
V
10
μA
Forward
Reverse
100 nA
-100 nA
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
0.07
18
V/°C
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
23
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10 V, ID = 25 A
mΩ
CISS
COSS
CRSS
900 1220 pF
VGS = 0 V, VDS = 25 V
Output Capacitance
430 550
pF
pF
f = 1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Total Gate Charge
80
100
80
QG
QGS
QGD
tD(ON)
tR
60
9
nC
nC
nC
ns
ns
ns
ns
VDS = 50V, VGS = 10 V
Gate-Source Charge
ID = 1.3A (Note 1, 2)
Gate-Drain Charge
20
60
Turn-On Delay Time
80
Turn-On Rise Time
VDD = 30V, ID =0.5 A,
RG = 25Ω (Note 1, 2)
180 220
300 350
200 250
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
Forward Current
IS
50
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
200
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VSD
tRR
IS = 50A, VGS = 0 V
IS = 50A, VGS = 0 V
dIF / dt = 100 A/μs
1.5
V
54
81
ns
μC
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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50N06-F
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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50N06-F
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RG
VDD
ID(t)
VDS(t)
VDD
10V
D.U.T.
tp
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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50N06-F
Power MOSFET
TYPICAL CHARACTERISTICS
On State Current vs.
On-Resistance Variation vs.
Allowable Case Temperature
Drain Current and Gate Voltage
102
70
60
50
40
30
20
150°C
25°C
101
VGS=10V
*Note:
1. VGS=0V
2. 250µs Test
VGS=20V
10
0
100
0
120140160
100
20 30 40 50 60
70 80 90
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Drain Current, ID (A)
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50N06-F
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Junction Temperature
On-Resistance Variation vs.
Junction Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.8
*Note:
1. VGS=10V
2. ID=25A
*Note:
1. VGS=0V
2. ID=250µA
0.5
0.0
200
150
-100 -50
0
50 100
-50
0
50
100
150
Junction Temperature, TJ (°C)
Junction Temperature, TJ (°C)
Maximum Drain Current vs.
Case Temperature
Maximum Safe Operating
103
50
40
Operation in This
Area by RDS (on)
100µs
1ms
102
101
30
10ms
10ms
20
10
0
*Note:
1. Tc=25°C
2. TJ=150°C
100
10-1 3. Single Pulse
10-1 100
Drain-Source Voltage, VDS (V)
101
102
150
25
50
75
100
125
Case Temperature, TC (°C)
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50N06-F
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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