20ETF12S [VISHAY]
Fast Soft Recovery Rectifier Diode, 20 A; 快速软恢复整流二极管， 20 A
| 型号： | 20ETF12S |
| 厂家： | 
VISHAY |
| 描述： | Fast Soft Recovery Rectifier Diode, 20 A |
| 文件： | 总8页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
20ETF..SPbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 20 A
FEATURES/DESCRIPTION
Base
common
cathode
+
The 20ETF..SPbF fast soft recovery rectifier
series has been optimized for combined short
reverse recovery time and low forward voltage
drop.
2
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
1
3
This product series has been designed and
qualified for industrial level.
D2PAK (SMD-220)
-
-
Anode
Anode
Compliant to RoHS directive 2002/95/EC.
Halogen-free according to IEC 61249-2-21 definition.
PRODUCT SUMMARY
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
VF at 20 A
< 1.31 V
355 A
IFSM
VRRM
800 V to 1200 V
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
VF
CHARACTERISTICS
VALUES
20
UNITS
Sinusoidal waveform
A
V
800 to 1200
355
A
20 A, TJ = 25 °C
1 A, 100 A/µs
Range
1.31
V
trr
95
ns
°C
TJ
- 40 to 150
VOLTAGE RATINGS
V
RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
PART NUMBER
20ETF08SPbF
20ETF10SPbF
20ETF12SPbF
800
1000
1200
900
1100
1300
6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
20
UNITS
Maximum average forward current
IF(AV)
TC = 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
300
A
Maximum peak one cycle
non-repetitive surge current
IFSM
355
450
Maximum I2t for fusing
I2t
A2s
635
Maximum I2√t for fusing
I2√t
6350
A2√s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94099
Revision: 17-Sep-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
1
20ETF..SPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
1.31
11.88
0.93
0.1
UNITS
V
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
VFM
20 A, TJ = 25 °C
rt
mΩ
V
TJ = 150 °C
VF(TO)
TJ = 25 °C
Maximum reverse leakage current
IRM
VR = Rated VRRM
mA
TJ = 150 °C
6
RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
VALUES
400
UNITS
ns
IFM
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
trr
IF at 20 Apk
trr
Irr
Qrr
S
6.1
A
25 A/µs
25 °C
ta tb
t
dir
dt
1.7
µC
Qrr
Typical
0.6
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 150
°C
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.9
62
°C/W
Maximum thermal resistance,
junction to ambient (PCB mount)
(1)
RthJA
Soldering temperature
TS
240
2
°C
g
Approximate weight
0.07
oz.
20ETF08S
20ETF10S
20ETF12S
Marking device
Case style D2PAK (SMD-220)
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
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2
For technical questions, contact: diodestech@vishay.com
Document Number: 94099
Revision: 17-Sep-09
20ETF..SPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay High Power Products
150
140
130
120
110
100
45
40
35
30
25
20
15
10
5
20ETF.. Series
RthJC (DC) = 0.9 K/W
180°
120°
90°
60°
30°
DC
Ø
Conduction angle
RMS limit
30°
Ø
Conduction period
60°
90°
15
20ETF.. Series
TJ = 150 °C
120°
180°
0
0
5
10
20
25
0
5
10
15
20
25
30
35
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
350
300
250
200
150
100
50
150
140
130
120
110
100
At any rated load condition and with
rated VRRM applied following surge.
20ETF.. Series
RthJC (DC) = 0.9 K/W
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
60°
90°
15
30°
20ETF.. Series
120°
DC
30
180°
25
1
10
100
0
5
10
20
35
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
35
30
25
20
15
10
5
400
180°
120°
90°
60°
30°
Maximum non-repetitive surge current
versus pulse train duration.
350
300
250
200
150
100
50
Initial TJ = 150 °C
No voltage reapplied
Rated VRRM reapplied
RMS limit
Ø
Conduction angle
20ETF.. Series
TJ = 150 °C
20ETF.. Series
0
0
5
10
15
20
25
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94099
Revision: 17-Sep-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
3
20ETF..SPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay High Power Products
1000
100
10
TJ = 25 °C
TJ = 150 °C
20ETF.. Series
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
6
IFM = 30 A
20ETF.. Series
TJ = 25 °C
20ETF.. Series
TJ = 25 °C
5
4
3
2
1
0
I
FM = 30 A
IFM = 20 A
IFM = 20 A
IFM = 10 A
I
FM = 5 A
IFM = 1 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
50
100
150
200
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
1.2
10
IFM = 30 A
20ETF.. Series
TJ = 150 °C
20ETF.. Series
TJ = 150 °C
8
6
4
2
0
IFM = 20 A
0.9
0.6
0.3
0
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
IFM = 5 A
IFM = 1 A
0
50
100
150
200
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
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4
For technical questions, contact: diodestech@vishay.com
Document Number: 94099
Revision: 17-Sep-09
20ETF..SPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay High Power Products
25
20
15
10
5
35
30
25
20
15
10
5
IFM = 30 A
20ETF.. Series
IFM = 30 A
20ETF.. Series
TJ = 25 °C
TJ = 150 °C
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
IFM = 1 A
0
0
0
50
100
150
200
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94099
Revision: 17-Sep-09
For technical questions, contact: diodestech@vishay.com
www.vishay.com
5
20ETF..SPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
20
E
T
F
12
S
TRL PbF
1
2
3
4
5
6
7
8
1
2
-
-
Current rating (20 = 20 A)
Circuit configuration:
E = Single diode
3
4
-
-
Package:
T = D2PAK (TO-220AC)
Type of silicon:
F = Fast soft recovery rectifier
Voltage code x 100 = VRRM
S = Surface mountable
None = Tape
08 = 800 V
10 = 1000 V
12 = 1200 V
5
6
7
-
-
-
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
None = Standard production
PbF = Lead (Pb)-free
8
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Part marking information
Packaging information
www.vishay.com
6
For technical questions, contact: diodestech@vishay.com
Document Number: 94099
Revision: 17-Sep-09
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
B
A
Pad layout
A
(2)(3)
E
A
(E)
c2
11.00
MIN.
(0.43)
(3)
D
L1
4
2
9.65
MIN.
(0.38)
(D1) (3)
Detail A
17.90 (0.70)
15.00 (0.625)
H
(2)
1
3
3.81
MIN.
L2
(0.15)
B
B
2.32
MIN.
(0.08)
A
B
2.64 (0.103)
2.41 (0.096)
(3)
E1
2 x b2
2 x b
C
c
View A - A
0.004 M
Base
Metal
0.010 M
M
B
A
Plating
(4)
b1, b3
2 x
e
H
Gauge
plane
(4)
c1
(c)
B
0° to 8°
Seating
plane
Lead assignments
L3
A1
Lead tip
(b, b2)
L
Diodes
L4
Section B - B and C - C
Scale: None
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
Detail “A”
Rotated 90 °CW
Scale: 8:1
MILLIMETERS
SYMBOL
INCHES
MILLIMETERS
INCHES
NOTES
SYMBOL
NOTES
MIN.
4.06
0.00
0.51
0.51
1.14
1.14
0.38
0.38
1.14
8.51
MAX.
4.83
0.254
0.99
0.89
1.78
1.73
0.74
0.58
1.65
9.65
MIN.
0.160
0.000
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
MAX.
0.190
0.010
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
MIN.
6.86
9.65
7.90
MAX.
8.00
MIN.
MAX.
0.315
0.420
0.346
A
A1
b
D1
E
0.270
0.380
0.311
3
2, 3
3
10.67
8.80
E1
e
b1
b2
b3
c
4
4
4
2
2.54 BSC
0.100 BSC
H
14.61
1.78
-
15.88
2.79
1.65
1.78
0.575
0.070
-
0.625
0.110
0.066
0.070
L
L1
L2
L3
L4
3
c1
c2
D
1.27
0.050
0.25 BSC
0.010 BSC
4.78
5.28
0.188
0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(2)
(3)
(4)
(5)
(6)
(7)
Thermal pad contour optional within dimension E, L1, D1 and E1
Dimension b1 and c1 apply to base metal only
Datum A and B to be determined at datum plane H
Controlling dimension: inch
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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1
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