20ETF12STRLPBF [INFINEON]
FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free (PbF suffix); 快速软恢复整流二极管无铅（的PbF后缀）
| 型号： | 20ETF12STRLPBF |
| 厂家： | 
Infineon |
| 描述： | FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free (PbF suffix) |
| 文件： | 总8页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I2208 03/05
QUIETIR Series
20ETF12SPbF
FAST SOFT RECOVERY
RECTIFIER DIODE
VF < 1.31V @ 20A
IFSM = 355A
Lead-Free ("PbF" suffix)
VRRM= 1200V
Description/ Features
The 20ETF12SPbF fast soft recovery QUIETIR
rectifier series has been optimized for combined
short reverse recovery time and low forward voltage
drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and power
cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Package Outline
Major Ratings and Characteristics
Characteristics
Values
Units
I
Sinusoidal waveform
20
1200
355
A
V
F(AV)
V
I
RRM
A
FSM
V
@20A, T =25°C
J
1.31
V
F
trr
@1A,100A/µs
range
95
ns
°C
D2 Pak (SMD-220)
T
-40to150
J
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1
20ETF12SPbF QUIETIR Series
Bulletin I2208 03/05
Voltage Ratings
VRRM , maximum
peak reverse voltage
V
VRSM , maximum non repetitive
IRRM
150°C
mA
peak reverse voltage
V
Part Number
20ETF12SPbF
1200
1300
6
Absolute Maximum Ratings
Parameters
20ETF..S Units
Conditions
IF(AV) Max. Average Forward Current
20
A
@TC =97°C, 180°conductionhalfsinewave
IFSM Max.PeakOneCycleNon-Repetitive
Surge Current
300
355
450
635
6350
10msSinepulse, ratedVRRMapplied
10msSine pulse,novoltagereapplied
10msSinepulse, ratedVRRMapplied
10msSinepulse,novoltagereapplied
t=0.1to10ms, novoltagereapplied
A
I2t
Max.I2tforfusing
A2s
I2√t Max.I2√tforfusing
A2√s
Electrical Specifications
Parameters
20ETF..S Units
Conditions
VFM Max. Forward Voltage Drop
1.31
11.88
0.93
0.1
V
mΩ
V
@ 20A, TJ = 25°C
rt
Forward slope resistance
TJ = 150°C
VF(TO) Threshold voltage
IRM Max. Reverse Leakage Current
TJ = 25 °C
mA
VR = rated VRRM
6
TJ = 150 °C
Recovery Characteristics
Parameters
20ETF..S Units
Conditions
IF @ 20Apk
Ifm
trr
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
400
6.1
1.7
0.6
ns
A
trr
Irr
Qrr
S
@ 25A/ µs
@ 25°C
ta tb
t
dir
dt
Qrr
µC
Irm (REC)
Snap Factor
tb/ta
typical
2
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20ETF12SPbF QUIETIR Series
Bulletin I2208 03/05
Thermal-Mechanical Specifications
Parameters
20ETF..S Units Conditions
TJ
Max. Junction Temperature Range
-40to150
-40to150
0.9
°C
°C
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance Junction
toCase
°C/W
DC operation
RthJA Max. Thermal Resistance Junction
toAmbient(PCBMount)**
62
°C/W
Ts
wt
Soldering Temperature
Approximate Weight
CaseStyle
240
°C
2(0.07)
D2Pak(SMD-220)
g(oz.)
Device marking
20ETF12S
**Whenmountedon1"square(650mm2)PCBofFR-4orG-10material4oz(140µm)copper40°C/W
Forrecommendedfootprintandsolderingtechniquesrefertoapplicationnote#AN-994
150
140
130
120
110
100
150
140
130
120
110
100
20ETF.. Series
(DC) = 0.9 K/W
20ETF.. Series
(DC) = 0.9 K/W
R
R
thJC
thJC
Conduction Angle
Conduction Period
30°
60°
60°
30°
90°
90°
120°
120°
180°
180°
DC
0
5
10
15
20
25
0
5
10 15 20 25 30 35
Average Forward Current (A)
Average Forward Current (A)
Fig. 2-CurrentRatingCharacteristics
Fig. 1-CurrentRatingCharacteristics
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
DC
180°
120°
90°
180°
120°
90°
60°
60°
30°
30°
RMS Limit
RMS Limit
Conduction Angle
20ETF.. Series
Conduction Period
20ETF.. Series
T = 150°C
J
T = 150°C
J
0
0
0
5
10
Average Forward Current (A)
Fig. 3-ForwardPowerLossCharacteristics
15
20
25
0
5
10 15 20 25 30 35
Average Forward Current (A)
Fig. 4-ForwardPowerLossCharacteristics
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3
20ETF12SPbF QUIETIR Series
Bulletin I2208 03/05
350
400
350
300
250
200
150
100
50
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Rated V
Applied Following Surge.
RRM
Initial T = 150°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 150°C
J
300
250
200
150
100
50
No Voltage Reapplied
Rated V
Reapplied
RRM
20ETF.. Series
20ETF.. Series
1
10
100
0.01
0.1
Pulse Train Duration (s)
Fig. 6-MaximumNon-RepetitiveSurgeCurrent
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5-MaximumNon-RepetitiveSurgeCurrent
1000
100
10
T = 25°C
J
T = 150°C
J
20ETF.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 7-ForwardVoltageDropCharacteristics
1.2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20ETF.. Series
20ETF.. Series
T = 25 °C
J
T = 150 °C
J
0.9
0.6
0.3
0
I
= 30A
FM
I
= 30 A
FM
20 A
20 A
10 A
5 A
10 A
5 A
1 A
1 A
0
50
100
150
200
0
50
100
150
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 8-RecoveryTimeCharacteristics, TJ =25°C
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 9-RecoveryTimeCharacteristics, TJ =150°C
4
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20ETF12SPbF QUIETIR Series
Bulletin I2208 03/05
6
5
4
3
2
1
0
10
I
= 30A
20 A
I
= 30 A
20 A
FM
20ETF.. Series
J
20ETF.. Series
FM
T = 25 °C
T = 150 °C
J
8
6
4
2
0
10 A
10 A
5 A
5 A
1 A
1 A
0
50
100
150
200
0
50
100
150
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 10-RecoveryChargeCharacteristics, TJ =25°C
Fig. 11-RecoveryChargeCharacteristics, TJ =150°C
25
35
I
=30 A
20 A
10 A
5 A
20ETF.. Series
T = 25 °C
J
20ETF.. Series
T = 150 °C
J
I
= 30A
FM
FM
30
25
20
15
10
5
20
15
10
5
20 A
10 A
5 A
1 A
1 A
0
0
0
50
100
150
200
0
50
100
150
200
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12-RecoveryCurrentCharacteristics, TJ =25°C
Fig. 13-RecoveryCurrentCharacteristics, TJ =150°C
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Steady State Value
(DC Operation)
Single Pulse
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14-ThermalImpedanceZthJC Characteristics
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5
20ETF12SPbF QUIETIR Series
Bulletin I2208 03/05
Outline Table
4.69 (0.18)
4.20 (0.16)
10.16 (0.40)
REF.
1.32 (0.05)
1.22 (0.05)
6.47 (0.25)
6.18 (0.24)
93°
15.49 (0.61)
14.73 (0.58)
5.28 (0.21)
4.78 (0.19)
0.55 (0.02)
2.61 (0.10)
2.32 (0.09)
8.89 (0.35)
REF.
0.46 (0.02)
1.40 (0.055)
1.14 (0.045)
3X
0.93 (0.37)
0.69 (0.27)
MINIMUM RECOMMENDED FOOTPRINT
11.43 (0.45)
2X
1
3
4.57 (0.18)
8.89 (0.35)
4.32 (0.17)
17.78 (0.70)
2
0.61 (0.02) MAX.
5.08 (0.20) REF.
3.81 (0.15)
2.08 (0.08)
2X
2.54 (0.10)
2X
Dimensions in millimeters and inches
Marking Information
PART NUMBER
THIS IS A 20ETF12S WITH
LOT CODE 5K3A
ASSEMBLED ON WW 12, 2000
INTERNATIONAL
RECTIFIER
LOGO
20ETF12S
DATE CODE
YEAR 0 = 2000
WEEK 12
ASSEMBLY
LOT CODE
P = LEAD-FREE
6
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20ETF12SPbF QUIETIR Series
Bulletin I2208 03/05
Tape & Reel Information
TRR
1.60 (0.063)
1.50 (0.059)
1.60 (0.063)
4.10 (0.161)
3.90 (0.153)
DIA.
1.50 (0.059)
0.368 (0.0145)
0.342 (0.0135)
FEED DIRECTION
1.85 (0.073)
1.65 (0.065)
11.60 (0.457)
11.40 (0.449)
24.30 (0.957)
15.42 (0.609)
23.90 (0.941)
15.22 (0.601)
TRL
1.75 (0.069)
DIA.
10.90 (0.429)
10.70 (0.421)
1.25 (0.049)
4.72 (0.186)
16.10 (0.634)
4.52 (0.178)
15.90 (0.626)
Dimensions in millimeters and inches
FEED DIRECTION
13.50 (0.532)
12.80 (0.504)
26.40 (1.039)
24.40 (0.961)
DIA.
SMD-220 Tape & Reel
When ordering, indicate the part
number, part orientation, and the
quantity. Quantities are in multiples
of 800 pieces per reel for both
TRL and TRR.
60 (2.362)
DIA. MIN.
360 (14.173)
DIA. MAX.
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7
20ETF12SPbF QUIETIR Series
Bulletin I2208 03/05
Ordering Information Table
Device Code
20
E
T
F
12
S
TRL PbF
2
4
5
6
8
7
1
3
1
2
-
-
Current Rating (20 = 20A)
Circuit Configuration:
E = Single Diode
3
4
-
-
Package:
T = D2Pak (TO-220AC)
Type of Silicon:
F = Fast Soft Recovery Rectifier
Voltage Rating (12 = 1200V)
S = Surface Mountable
y none = Tape
5
6
7
-
-
-
y TRR = Tape & Reel (Right Oriented)
y TRL = Tape & Reel (Left Oriented)
y none = Standard Production
y PbF = Lead-Free
8
-
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/05
8
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相关型号：
20ETS08
Rectifier Diode, 1 Phase, 1 Element, 20A, 800V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN
VISHAY
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