20ETF12STRL [INFINEON]

FAST SOFT RECOVERY RECTIFIER DIODE; 快速软恢复整流二极管
20ETF12STRL
型号: 20ETF12STRL
厂家: Infineon    Infineon
描述:

FAST SOFT RECOVERY RECTIFIER DIODE
快速软恢复整流二极管

整流二极管 软恢复二极管 快速软恢复二极管
文件: 总8页 (文件大小:123K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
I2128 rev. A 01/2000  
QUIETIR Series  
20ETF..S HV  
FAST SOFT RECOVERY  
RECTIFIER DIODE  
VF < 1.31V @ 20A  
IFSM = 355A  
VRRM 800 to 1200V  
Description/Features  
The 20ETF..S fast soft recovery QUIETIR rectifier  
series has been optimized for combined short  
reverse recovery time and low forward voltage drop.  
The glass passivation ensures stable reliable  
operation in the most severe temperature and power  
cycling conditions.  
Typical applications are both:  
output rectification and freewheeling in  
inverters, choppers and converters  
and input rectifications where severe  
restrictions on conducted EMI should be met.  
Major Ratings and Characteristics  
Package Outline  
Characteristics  
20ETF..S Units  
I
Sinusoidalwaveform  
20  
800to1200  
355  
A
V
F(AV)  
V
range  
RRM  
I
A
FSM  
V
@20A,T =25°C  
J
1.31  
V
F
trr  
@1A,100A/µs  
range  
95  
ns  
°C  
D2 Pak (SMD-220)  
T
-40to150  
J
1
20ETF..S HV QUIETIR Series  
I2128 rev. A 01/2000  
Voltage Ratings  
VRRM , maximum  
VRSM , maximum non repetitive  
IRRM  
150°C  
mA  
peak reverse voltage  
V
peak reverse voltage  
V
Part Number  
20ETF08S  
20ETF10S  
800  
900  
1000  
1100  
6
20ETF12S  
1200  
1300  
Absolute Maximum Ratings  
Parameters  
20ETF..S Units  
Conditions  
IF(AV) Max.AverageForwardCurrent  
20  
A
@TC=97°C,180°conductionhalfsinewave  
IFSM Max.PeakOneCycleNon-Repetitive  
SurgeCurrent  
300  
355  
450  
635  
6350  
10msSinepulse,ratedVRRMapplied  
10msSinepulse,novoltagereapplied  
10msSinepulse,ratedVRRMapplied  
10msSinepulse,novoltagereapplied  
t=0.1to10ms,novoltagereapplied  
A
I2t  
Max.I2tforfusing  
A2s  
I2t Max.I2tforfusing  
A2s  
Electrical Specifications  
Parameters  
20ETF..S Units  
Conditions  
VFM Max. ForwardVoltageDrop  
1.31  
11.88  
0.93  
0.1  
V
mΩ  
V
@ 20A, TJ = 25°C  
rt  
Forwardsloperesistance  
TJ = 150°C  
VF(TO) Thresholdvoltage  
IRM Max.ReverseLeakageCurrent  
TJ = 25 °C  
mA  
VR = rated VRRM  
6
TJ = 150 °C  
Recovery Characteristics  
Parameters  
20ETF..S Units  
Conditions  
Ifm  
trr  
Irr  
ReverseRecoveryTime  
ReverseRecoveryCurrent  
ReverseRecoveryCharge  
400  
6.1  
1.7  
0.6  
ns  
A
IF @ 20Apk  
trr  
@ 25A/ µs  
ta  
tb  
t
dir  
dt  
Qrr  
Irm (REC)  
Qrr  
S
µC  
@25°C  
Snap Factor  
tb/ta  
typical  
2
20ETF..S HV QUIETIR Series  
I2128 rev. A 01/2000  
Thermal-Mechanical Specifications  
Parameters  
20ETF..S Units Conditions  
TJ  
Max.JunctionTemperatureRange  
-40to150  
-40to150  
0.9  
°C  
°C  
Tstg Max.StorageTemperatureRange  
RthJC Max.ThermalResistanceJunction  
toCase  
°C/W  
DCoperation  
RthJA Max.ThermalResistanceJunction  
toAmbient(PCBMount)**  
62  
°C/W  
Ts  
wt  
SolderingTemperature  
ApproximateWeight  
240  
°C  
2(0.07)  
g(oz.)  
CaseStyle  
D2Pak(SMD-220)  
**Whenmountedon1"square(650mm2)PCBofFR-4orG-10material4oz(140µm)copper40°C/W  
Forrecommendedfootprintandsolderingtechniquesrefertoapplicationnote#AN-994  
150  
140  
130  
120  
110  
100  
150  
140  
130  
120  
110  
100  
20ETF.. Series  
20ETF.. Series  
(DC) = 0.9 K/W  
R
(DC) = 0.9 K/W  
R
thJC  
th JC  
Conduction Angle  
Conduction Period  
30°  
60°  
60°  
30°  
90°  
120°  
90°  
120°  
180°  
180°  
DC  
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
30  
35  
Average Forward Current (A)  
Average Forward Current (A)  
Fig.2-CurrentRatingCharacteristics  
Fig.1-CurrentRatingCharacteristics  
35  
30  
25  
20  
15  
10  
5
45  
40  
35  
30  
25  
20  
15  
10  
5
DC  
180°  
120°  
90°  
60°  
30°  
180°  
120°  
90°  
60°  
30°  
RMS Limit  
RMS Limit  
Conduction Angle  
20ETF.. Series  
Conduction Period  
20ETF.. Series  
T
= 150°C  
J
T = 150°C  
J
0
0
0
5
10  
15  
20  
25  
0
5
10  
15  
20  
25  
30  
35  
Average Forward Current (A)  
Average Forward Current (A)  
Fig.3-ForwardPowerLossCharacteristics  
Fig.4-ForwardPowerLossCharacteristics  
3
20ETF..S HV QUIETIR Series  
I2128 rev. A 01/2000  
350  
400  
350  
300  
250  
200  
150  
100  
50  
At Any Rated Load Condition And With  
Maximum Non Repetitive Surge Current  
Versus Pulse Train Duration.  
Rated V  
Applied Following Surge.  
RRM  
Initial T = 150°C  
Initial T = 150°C  
300  
250  
200  
150  
100  
50  
J
J
@ 60 Hz 0.0083 s  
@ 50 Hz 0.0100 s  
No Voltage Reapplied  
Rated V  
Reapplied  
RRM  
20ETF.. Series  
20ETF.. Series  
1
10  
100  
0.01  
0.1  
Pulse Train Duration (s)  
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)  
Fig.5-MaximumNon-RepetitiveSurgeCurrent  
Fig.6-MaximumNon-RepetitiveSurgeCurrent  
1000  
100  
10  
T = 25°C  
J
T = 150°C  
J
20ETF.. Series  
1
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
Instantaneous Forward Voltage (V)  
Fig.7-ForwardVoltageDropCharacteristics  
1.2  
20ETF.. Series  
= 25 °C  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
20ETF.. Series  
= 150 °C  
T
T
J
J
0.9  
0.6  
0.3  
0
I
= 30 A  
F M  
I
= 30 A  
FM  
20 A  
20 A  
10 A  
10 A  
5 A  
5 A  
1 A  
1 A  
0
50  
100  
150  
200  
0
50  
100  
150  
200  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Fig.8-RecoveryTimeCharacteristics,TJ=25°C  
Fig.9-RecoveryTimeCharacteristics,TJ=150°C  
4
20ETF..S HV QUIETIR Series  
I2128 rev. A 01/2000  
6
5
4
3
2
1
0
10  
I
= 30 A  
20 A  
I
= 30 A  
20 A  
FM  
20ETF.. Series  
20ETF.. Series  
FM  
T
= 25 °C  
T
= 150 °C  
J
J
8
6
4
2
0
10 A  
10 A  
5 A  
5 A  
1 A  
1 A  
0
50  
100  
150  
200  
0
50  
100  
150  
200  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Fig.10-RecoveryChargeCharacteristics,TJ=25°C  
Fig.11-RecoveryChargeCharacteristics,TJ=150°C  
25  
35  
I
= 30 A  
20 A  
10 A  
5 A  
20ETF.. Series  
20ETF.. Series  
FM  
I
= 30 A  
FM  
T
= 25 °C  
T = 150 °C  
J
30  
25  
20  
15  
10  
5
J
20  
15  
10  
5
20 A  
10 A  
5 A  
1 A  
1 A  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Rate Of Fall Of Forward Current - di/dt (A/µs)  
Fig.12-RecoveryCurrentCharacteristics,TJ =25°C  
Fig.13-RecoveryCurrentCharacteristics,TJ=150°C  
1
D = 0.50  
D = 0.33  
D = 0.25  
D = 0.17  
D = 0.08  
0.1  
Steady State Value  
(DC Operation)  
Single Pulse  
20ETF.. Series  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
Square Wave Pulse Duration (s)  
Fig.14-ThermalImpedanceZthJCCharacteristics  
5
20ETF..S HV QUIETIR Series  
I2128 rev. A 01/2000  
Ordering Information Table  
Device Code  
20  
E
T
F
12  
S
TRL  
2
4
5
1
3
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
CurrentRating  
Circuit Configuration: E = Single Diode  
Package: T = TO-220AC  
Type of Silicon: S = Standard Recovery Rectifier  
Voltage code: Code x 100 = VRRM  
S = TO-220 D2Pak (SMD-220) Version  
Tape and Reel Option:  
08 = 800V  
10 = 1000V  
12 = 1200V  
TRL = Left Reel  
TRR = Right Orientation Reel  
Outline Table  
4 . 6 9 ( 0 .1 8 )  
4 .2 0 (0 .1 6 )  
1 0 .1 6 ( 0 . 40 )  
R E F .  
1 . 3 2 (0 .0 5 )  
1 . 2 2 (0 .0 5 )  
6 . 4 7 (0 .2 5 )  
9 3 °  
6 .1 8 (0 .2 4 )  
1 5 . 49 (0 .61 )  
1 4 . 73 (0 .58 )  
5 .2 8 ( 0 . 2 1)  
4 .7 8 ( 0 . 1 9)  
2 .6 1 (0 .1 0 )  
2 .3 2 (0 .0 9 )  
0 . 5 5 (0 . 0 2)  
8 . 8 9 (0 . 3 5)  
R E F .  
0 . 4 6 (0 . 0 2)  
1 . 4 0 (0 . 0 55 )  
3X  
1 . 1 4 (0 . 0 45 )  
0 . 9 3 (0 . 3 7)  
M IN IM U M R E C O M M E N D E D F OO T P R IN T  
1 1 . 43 (0 .4 5 )  
2 X  
0 . 6 9 (0 .2 7 )  
1
3
4 . 5 7 (0 .1 8 )  
8 . 8 9 (0 . 3 5)  
4 . 3 2 (0 .1 7 )  
1 7 . 78 (0. 7 0 )  
2
0 . 6 1 (0 . 0 2 ) M AX .  
5 . 0 8 (0 . 2 0 ) R EF .  
3 .8 1 (0 .1 5 )  
2 . 0 8 (0 . 0 8)  
2 X  
Dimensionsinmillimetersandinches  
2 . 5 4 (0 .1 0 )  
2 X  
6
20ETF..S HV QUIETIR Series  
I2128 rev. A 01/2000  
Marking Information  
(K)  
EXAMPLE: THIS IS AN 20ETF12S  
INTERNATIONAL  
RECTIFIER LOGO  
PART NUMBER  
20ETF12S  
BASE  
+
2
(K)  
9G3A 9512  
ASSEMBLY  
LOT CODE  
DATE CODE (YYWW)  
3
(A)  
YY = YEAR  
WW=WEEK  
1
(A)  
-
-
(A)  
(A)  
Tape & Reel Information  
T R R  
1 . 6 0 ( 0 . 0 6 3 )  
1 . 5 0 ( 0 . 0 5 9 )  
1 . 6 0 ( 0 . 0 6 3 )  
4 . 1 0 ( 0 . 1 6 1 )  
3 . 9 0 ( 0 . 1 5 3 )  
D IA .  
1 . 5 0 ( 0 . 0 5 9 )  
0 .3 6 8 (0 . 0 1 4 5 )  
0 .3 4 2 (0 . 0 1 3 5 )  
F E E D D IR E C T IO N  
1 . 8 5 (0 .0 7 3 )  
1 1 .6 0 (0 .4 5 7 )  
1 1 .4 0 (0 .4 4 9 )  
1 . 6 5 (0 .0 6 5 )  
2 4 .3 0 (0 .9 5 7 )  
2 3 .9 0 (0 .9 4 1 )  
1 5 .4 2 ( 0 .6 0 9 )  
1 5 .2 2 ( 0 .6 0 1 )  
T R L  
1 . 7 5 (0 .0 6 9 )  
1 . 2 5 (0 .0 4 9 )  
D I A .  
1 0 .9 0 ( 0 .4 2 9 )  
1 0 .7 0 ( 0 .4 2 1 )  
4 . 7 2 (0 .1 8 6 )  
4 . 5 2 (0 .1 7 8 )  
1 6 .1 0 ( 0 .6 3 4 )  
1 5 .9 0 ( 0 .6 2 6 )  
F E E D D IR E C T I O N  
Dimensionsinmillimetersandinches  
1 3 .5 0 (0 . 5 3 2 )  
2 6 .4 0 (1 .0 3 9 )  
2 4 .4 0 (0 .9 6 1 )  
D I A .  
1 2 .8 0 (0 . 5 0 4 )  
SMD-220 Tape & Ree l  
W h e n o rd e ri n g , in d ic at e th e p a r t  
n u m b e r, p a rt o rie n ta t io n , a n d th e  
q u a n t ity . Q u a n titie s a re in m u ltip le s  
o f 8 0 0 p ie c e s p e r r e e l fo r b o th  
T R L a n d T R R .  
6 0 (2 .3 6 2 )  
D IA M IN .  
3 6 0 (1 4 .1 7 3 )  
D I A . M A X .  
.
7
20ETF..S HV QUIETIR Series  
I2128 rev. A 01/2000  
WORLD HEADQUARTERS:  
EUROPEAN HEADQUARTERS:  
IR CANADA:  
233 Kansas St., El Segundo, California 90245 U.S.A Tel: (310) 322-3331 Fax: (310) 322-3332  
Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020 Fax: ++ 44 1883 733408  
7231 Victoria Park Ave., Suite #201, Markham, Ontario L3R 2Z8 Tel: (905) 475 1897. Fax: (905) 475 8801  
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 Fax: ++ 49 6172 965933  
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 4510111 Fax: ++ 39 11 4510220  
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 Fax: 81 3 3983  
0642  
IR GERMANY:  
IR ITALY:  
IR FAR EAST:  
IR SOUTHEAST ASIA:  
315 Outram Road, # 10-02 Tan Boon Liat Building, SINGAPORE 0316. Tel: 65 221 8371. Fax: 65 221 8372.  
http://www.irf.com  
Fax-On-Demand: +44 1883 733420  
Data and specifications subject to change without notice  
11/97  
8

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