80-M212PMB015SC-K228A42 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;型号: | 80-M212PMB015SC-K228A42 |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
文件: | 总29页 (文件大小:8993K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
80-M212PMB015SC-K228A42
datasheet
MiniSKiiP® PIM 2
1200 V / 15 A
Features
MiniSKiiP® 2 16 mm housing
● Trench Fieldstop IGBT4 technology
● Open emitter configuration
● Solder-free spring contact technology
● Built-in PTC
Schematic
Target applications
● Industrial Drives
Types
● 80-M212PMB015SC-K228A42
Copyright Vincotech
1
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
26
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
45
A
Ptot
88
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
21
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
IFSM
I2t
65
A
Single Half Sine Wave,
tp = 10 ms
21
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
66
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
Collector-emitter voltage
1200
26
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
45
A
Ptot
88
W
V
VGES
Gate-emitter voltage
±20
10
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Brake Diode
VRRM
Peak repetitive reverse voltage
1200
21
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 25 °C
Ts = 80 °C
IFSM
I2t
65
A
Single Half Sine Wave,
tp = 10 ms
21
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
66
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
43
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
58
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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80-M212PMB015SC-K228A42
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0005
15
25
5,3
5,8
6,3
V
V
25
1,58
1,87
2,14
2,21
2,07(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2
µA
nA
Ω
20
120
None
890
30
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
20
0
120
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,08
K/W
25
51,2
51,52
52,16
28,16
29,12
28,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
173,12
235,52
251,52
121,98
181,31
203,13
0,582
0,884
1,01
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
15
tf
125
150
25
ns
QrFWD=0,674 µC
QrFWD=1,66 µC
QrFWD=2,07 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,07
Eoff
125
150
1,62
1,82
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
2,6
2,71(1)
2,77(1)
60
VF
IR
Forward voltage
15
V
150
25
2,65
Reverse leakage current
Vr = 1200 V
µA
150
900
1800
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,44
K/W
25
7,66
10,85
12,11
211,79
405
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
460,93
0,674
1,66
di/dt=616 A/µs
di/dt=584 A/µs
di/dt=502 A/µs
Qr
Recovered charge
±15
600
15
125
150
25
μC
2,07
0,287
0,744
0,928
102,1
80,86
85,09
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0005
15
25
5,3
5,8
6,3
V
V
25
1,58
1,87
2,14
2,21
2,07(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2
µA
nA
Ω
20
120
None
890
30
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
20
0
120
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,08
K/W
25
23,36
23,04
22,72
33,28
33,6
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
34,24
223,04
292,8
309,76
107,35
168,96
197,48
0,841
1,23
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
700
15
tf
125
150
25
ns
QrFWD=0,701 µC
QrFWD=1,66 µC
QrFWD=2,09 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,4
1,2
Eoff
125
150
1,9
2,12
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Brake Diode
Static
25
2,6
2,71(1)
2,77(1)
60
VF
IR
Forward voltage
15
V
150
25
2,65
Reverse leakage current
Vr = 1200 V
µA
150
900
1800
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,44
K/W
25
7,19
10,15
11,12
224,11
387,2
452,5
0,701
1,66
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=344 A/µs
di/dt=401 A/µs
di/dt=341 A/µs
Qr
Recovered charge
0/15
700
15
125
150
25
μC
2,09
0,337
0,839
1,06
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
84,03
67,45
64,87
(dirf/dt)max
125
150
Copyright Vincotech
7
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,11
1,03
1,02
1,5(1)
VF
IR
Forward voltage
18
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,2
K/W
Thermistor
Static
R
ΔR/R
Imax
d
Rated resistance
Deviation of R100
Maximum Current
Power dissipation constant
A-value
25
1
kΩ
%
R100 = 1670 Ω
100
-2
2
3
mA
25
0,76
mW/K
1/K
7,635x10-3
1,73x10-5
A
B-value
1/K2
B
Vincotech Thermistor Reference
E
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
5,0
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
1,08
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,13E-02
4,66E-01
3,95E-01
8,84E-02
5,92E-02
1,56E+00
9,71E-02
1,21E-02
1,02E-03
3,09E-04
Copyright Vincotech
9
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datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
26 Jul. 2021 / Revision 1
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datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,445
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,37E-02
5,67E-01
4,45E-01
2,82E-01
6,71E-02
1,83E+00
7,20E-02
1,17E-02
1,68E-03
3,86E-04
Copyright Vincotech
11
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datasheet
Brake Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
40
40
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
30
20
10
30
20
10
0
0
0
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
15,0
10
12,5
10,0
7,5
0
10
-1
10
5,0
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
1,08
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,13E-02
4,66E-01
3,95E-01
8,84E-02
5,92E-02
1,56E+00
9,71E-02
1,21E-02
1,02E-03
3,09E-04
Copyright Vincotech
12
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datasheet
Brake Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Brake Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,445
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,37E-02
5,67E-01
4,45E-01
2,82E-01
6,71E-02
1,83E+00
7,20E-02
1,17E-02
1,68E-03
3,86E-04
Copyright Vincotech
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datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,199
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
9,53E-03
8,81E-02
5,06E-01
4,21E-01
1,75E-01
3,62E+01
1,34E+00
1,09E-01
1,95E-02
2,24E-03
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical PTC characteristic as function of temperature
RT = f(T)
2200
2000
1800
1600
1400
1200
1000
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eoff
Eon
Eoff
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eon
Eoff
Eon
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
16
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
17
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
tf
td(on)
-1
10
td(off)
tf
tr
-1
10
td(on)
tr
-2
10
-2
10
-3
10
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
16
°C
V
150
600
±15
15
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
IRM
IRM
5,0
5,0
IRM
2,5
2,5
0,0
0,0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
19
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
700
1750
1500
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
600
500
400
300
200
100
0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
20
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Brake Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eoff
Eon
Eoff
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
V
Ω
Ω
125 °C
150 °C
700
0/15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
V
Ω
125 °C
150 °C
700
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Brake Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
tf
tf
-1
10
-1
10
td(on)
tr
tr
td(on)
-2
10
-2
10
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/15
16
°C
V
150
700
0/15
15
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
V
Ω
125 °C
150 °C
700
0/15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Brake Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
V
Ω
125 °C
150 °C
700
0/15
15
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
12,5
10,0
7,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
IRM
IRM
5,0
IRM
5,0
2,5
2,5
0,0
0,0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
V
Ω
125 °C
150 °C
700
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
23
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Brake Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
700
500
400
300
200
100
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
600
500
400
300
200
100
0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
16
V
V
Ω
125 °C
150 °C
700
0/15
15
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
35
IC MAX
30
25
20
15
10
5
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
24
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M212PMB015SC-K228A42-/0A/
80-M212PMB015SC-K228A42-/0B/
80-M212PMB015SC-K228A42-/1A/
80-M212PMB015SC-K228A42-/1B/
80-M212PMB015SC-K228A42-/4A/
80-M212PMB015SC-K228A42-/4B/
80-M212PMB015SC-K228A42-/5A/
80-M212PMB015SC-K228A42-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
G16
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
-0,01
-0,01
5,85
Br
Br
24,38
24,38
24,38
-21,8
-18,6
-15,4
9,05
2
S16
not assembled
not assembled
18,65
3
Ph3
4
not assembled
-9
-0,01
0,03
-8,5
-8,5
G27
5
24,38
Ph3
21,8
-21,8
-18,6
DC-Br
6
not assembled
not assembled
12,2
DC+Rect
DC+Rect
7
8
24,38
24,38
24,38
24,38
16,58
16,58
16,58
16,58
13,42
G15
not assembled
9
15,4
18,6
21,8
12,2
15,4
18,6
21,8
-21,8
DC-3
Therm1
Therm2
G13
-8,5
-12,2
DC+Inv
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
not assembled
-12,22
-12,22
-5,8
0,7
DC+Inv
DC+Br
DC-3
not assembled
DC-2
-12,22
-12,22
7,1
DC+Br
DC-2
not assembled
G14
15,4
DC-Rect
not assembled
-15,4
not assembled
13,42
13,42
S14
Ph2
-12,22
-24,38
21,8
DC-Rect
ACIn3
-12,2
-21,8
not assembled
-5,8
not assembled
13,42
8,38
Ph2
G11
-24,38
-15,4
ACIn3
not assembled
not assembled
12,2
not assembled
not assembled
not assembled
not assembled
-24,38
-24,38
-24,38
-24,38
-2,5
ACIn2
8,38
8,38
2,46
18,6
21,8
DC-1
DC-1
G12
not assembled
3,9
ACIn2
-21,8
not assembled
not assembled
-15,4
15,4
ACIn1
2,46
2,46
S12
Ph1
not assembled
-12,2
21,8
ACIn1
not assembled
33
2,46
-5,8
Ph1
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
27
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Pinout
DC+Rect
40,41
DC+Br
46,48
DC+Inv
43,45
T12
T14
T16
D11
D13
D15
G12
28
G14
16
G16
1
D32
D27
D34
D36
S12
30
S14
18
S16
2
ACIn1
63,65
Ph1
31,33
ACIN2
59,61
Br
34,35
Ph2
19,21
ACIN3
53,55
Ph3
3,5
D31
D33
D35
T11
T13
T15
D12
D14
D16
T27
G11
24
G13
12
G15
8
G27
38
Rt
DC-Rect
50,52
DC-Br
39
DC-1
26,27
DC-2
14,15
DC-3
9, 13
Therm1
10
Therm2
11
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
15 A
Inverter Switch
T15, T16
D11, D12, D13, D14,
FWD
1200 V
15 A
Inverter Diode
D15, D16
T27
IGBT
FWD
1200 V
1200 V
15 A
15 A
Brake Switch
Brake Diode
D27
D31, D32, D33, D34,
D35, D36
Rectifier
1600 V
18 A
Rectifier Diode
Thermistor
Rt
Thermistor
Copyright Vincotech
28
26 Jul. 2021 / Revision 1
80-M212PMB015SC-K228A42
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 72
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 2 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M212PMB015SC-K228A42-D1-14
26 Jul. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
26 Jul. 2021 / Revision 1
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