80-M212WPA050M701-K750F71

datasheet

MiniSKiiP Twin 2

1200 V / 50 A

Topology features

MiniSKiiP^®2 16 mm housing

● Open Emitter configuration

● Temperature sensor

● 2xInverter

Component features

● Easy paralleling

● Low turn-off losses

● Low collector emitter saturation voltage

● Positive temperature coefficient

● Short tail current

● Switching optimized for EMC

Housing features

● Base isolation: Al₂O₃

Schematic

● Easy assembly in one mounting step

● Flexible PCB design w/o pin holes

● Rugged solderless spring contacts

Target applications

● Embedded Drives

● Industrial Drives

● Servo Drives

Types

● 80-M212WPA050M701-K750F71

Copyright Vincotech

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23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Inverter Switch

V_CES

Collector-emitter voltage

1200

V

A

(1)

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s<= 80 °C

T_s= 80 °C

T_j= 150 °C

30

I_CRM

t_plimited by T_jmax

T_j= T_jmax

30

79

A

P_tot

W

V

V_GES

Gate-emitter voltage

±20

9,5

175

t_SC

Short circuit ratings

V_GE= 15 V, V_CC= 800 V

µs

°C

T_jmax

Maximum junction temperature

(1)

limited by I_CRM

Inverter Diode

V_RRM

Peak repetitive reverse voltage

1600

43

V

A

I_F

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

200

58

A

Single Half Sine Wave,

t_p= 10 ms

A²s

W

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

Inverter Switch 2

V_CES

Collector-emitter voltage

1200

68

V

A

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

100

151

±20

9,5

A

P_tot

W

V

V_GES

Gate-emitter voltage

t_SC

Short circuit ratings

V_GE= 15 V, V_CC= 800 V

µs

°C

T_jmax

Maximum junction temperature

175

Copyright Vincotech

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23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Inverter Diode 2

V_RRM

Peak repetitive reverse voltage

1200

38

V

A

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

50

A

P_tot

75

W

°C

T_jmax

Maximum junction temperature

175

Module Properties

Thermal Properties

T_stg

T_jop

Storage temperature

-40…+125

°C

Operation temperature under switching

condition

-40…+(T_jmax- 25)

Isolation Properties

Isolation voltage

V_isol

DC Test Voltage*

t_p= 2 s

5500

2500

V

Isolation voltage

AC Voltage

With std lid

t_p= 1 min

Creepage distance

Clearance

For more informations see handling

instructions

6,3

mm

With std lid

For more informations see handling

instructions

6,3

Comparative Tracking Index

*100 % tested in production

CTI

≥ 600

Copyright Vincotech

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23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

10

0,0015

15

25

5,4

6

6,6

V

25

1,7

2,1⁽²⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

1,95

2,01

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

1200

0

25

60

µA

nA

Ω

200

None

2900

120

34

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

Reverse transfer capacitance

Gate charge

0

10

25

V_CC= 600 V

0/15

15

110

Thermal

λ_paste= 2,5 W/mK

(HPTP)

Thermal resistance junction to sink⁽³⁾

Dynamic

1,2

K/W

R_th(j-s)

25

184,8

181

t_d(on)

Turn-on delay time

Rise time

ns

125

25

35,2

t_r

125

25

42

R_gon= 32 Ω

R_goff= 32 Ω

180,2

203

t_d(off)

Turn-off delay time

Fall time

ns

125

25

±15

600

15

85,46

110,53

18,25

21,27

1,01

t_f

ns

125

25

Q_rFWD=35,89 µC

Q_rFWD=39,16 µC

E_on

E_off

Turn-on energy (per pulse)

Turn-off energy (per pulse)

mWs

125

25

125

1,38

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Diode

Static

25

1,12

1,03

1,02

1,5⁽²⁾

V_F

I_R

Forward voltage

18

125

150

25

V

100

Reverse leakage current

Thermal

V_r= 1600 V

µA

150

1000

λ_paste= 2,5 W/mK

(HPTP)

Thermal resistance junction to sink⁽³⁾

Dynamic

1,2

K/W

R_th(j-s)

25

48,41

41,29

1587

1931

35,89

39,16

8,6

I_RM

Peak recovery current

Reverse recovery time

Recovered charge

A

125

25

t_rr

ns

125

25

di/dt=413 A/µs

di/dt=332 A/µs

Q_r

±15

600

15

μC

125

25

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

125

25

8,91

113,02

76,45

(di_rf/dt)_max

125

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch 2

Static

V_GE(th)

Gate-emitter threshold voltage

10

0,005

50

25

5,4

6

6,6

V

25

1,55

1,77

1,83

1,9⁽²⁾

V_CEsat

Collector-emitter saturation voltage

15

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

0

1200

0

25

0,09

0,5

mA

µA

Ω

20

None

10000

350

C_ies

C_oes

C_res

Q_g

pF

nC

Output capacitance

0

10

25

Reverse transfer capacitance

Gate charge

130

V_CC= 600 V

0/15

50

380

Thermal

λ_paste= 2,5 W/mK

(HPTP)

Thermal resistance junction to sink⁽³⁾

Dynamic

0,63

K/W

R_th(j-s)

25

331,44

323,72

321,7

101,99

107,38

108,55

249,33

277,97

285,41

77,6

t_d(on)

Turn-on delay time

Rise time

125

150

25

ns

t_r

125

150

25

R_gon= 16 Ω

R_goff= 16 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

25

ns

±15

600

50

t_f

125

150

25

102,28

108,86

6,13

ns

Q_rFWD=2,77 µC

Q_rFWD=4,21 µC

Q_rFWD=4,66 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

25

7,28

mWs

7,61

3,52

E_off

125

150

4,95

5,37

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datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Diode 2

Static

25

1,63

1,7

2,1⁽²⁾

V_F

I_R

Forward voltage

25

125

150

V

1,69

Reverse leakage current

Thermal

V_r= 1200 V

25

35

µA

λ_paste= 2,5 W/mK

(HPTP)

Thermal resistance junction to sink⁽³⁾

Dynamic

1,26

K/W

R_th(j-s)

25

17,26

19,14

19,85

301,89

445,81

486,65

2,77

I_RM

Peak recovery current

125

150

25

A

t_rr

Reverse recovery time

125

150

25

ns

di/dt=348 A/µs

di/dt=328 A/µs

di/dt=365 A/µs

Q_r

Recovered charge

±15

600

50

125

150

25

4,21

μC

4,66

0,929

1,57

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

25

mWs

A/µs

1,77

129,27

88,5

(di_rf/dt)_max

125

150

87,51

Copyright Vincotech

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23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Thermistor

Static

R

Δ_R/R

P

Rated resistance

25

5

kΩ

%

Deviation of R100

Power dissipation

Power dissipation constant

B-value

R₁₀₀= 499 Ω

100

25

3,2

3,3

130

1,3

mW

mW/K

K

d

25

B_(25/50)

Tol. ±1 %

3380

Vincotech Thermistor Reference

V

(2)

Value at chip level

(3)

Only valid with pre-applied Vincotech thermal interface material.

Copyright Vincotech

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23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Inverter Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

40

V_GE

:

7 V

8 V

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

30

20

10

30

20

10

0

1

2

3

4

5

6

7

8

1

2

3

4

5

6

7

8

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

250

150

μs

°C

25 °C

V_GE

T_j=

V

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

1

15,0

10

12,5

10,0

7,5

0

10

-1

10

5,0

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

2,5

-3

0,0

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

2,5

5,0

7,5

10,0

12,5

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

1,203

25 °C

V_CE

=

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

8,45E-02

4,66E-01

3,90E-01

1,45E-01

1,16E-01

1,63E+00

9,37E-02

2,02E-02

3,96E-03

5,44E-04

Copyright Vincotech

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23 Nov. 2022 / Revision 1

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datasheet

Inverter Switch Characteristics

figure 5.

IGBT

figure 6.

IGBT

Safe operating area

Gate voltage vs gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

100

17,5

15,0

12,5

10,0

7,5

10µs

10

1

100µs

1ms

10ms

5,0

0,1

0,01

100ms

DC

2,5

0,0

1

10

100

1000

10000

0

25

50

75

100

125

V

_CE(V)

Q_g(μC)

D =

I_C

=

single pulse

15

25

A

T_s=

T_j=

80

15

°C

V

°C

V_GE

=

T_j=

T_jmax

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23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Inverter Diode Characteristics

figure 7.

Rectifier

figure 8.

Rectifier

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

50

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

-2

10

0,1

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,00

0,25

0,50

μs

0,75

1,00

1,25

1,50

1,75

10

V_F(V)

t_p(s)

t_p

=

250

D =

t_p/ T

1,199

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

Rectifier thermal model values

R (K/W)

τ (s)

9,53E-03

8,81E-02

5,06E-01

4,21E-01

1,75E-01

3,62E+01

1,34E+00

1,09E-01

1,95E-02

2,24E-03

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Inverter Switch 2 Characteristics

figure 9.

IGBT

figure 10.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

150

V_GE

:

7 V

8 V

125

100

75

50

25

0

125

100

75

50

25

0

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

V

_CE(V)

V_CE(V)

t_p

=

t_p

=

250

15

μs

V

250

150

μs

°C

25 °C

V_GE

=

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 11.

IGBT

figure 12.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

0

50

10

40

30

20

10

0

-1

10

-2

10

0,5

0,2

0,1

-3

10

0,05

0,02

0,01

0,005

0

-4

10

-5

-4

10

-3

10

-2

10

-1

10

0

10

1

10

2

0,0

2,5

5,0

7,5

10,0

12,5

10

t_p(s)

V

_GE(V)

t_p

=

250

10

μs

V

D =

t_p/ T

0,63

25 °C

V_CE

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

5,38E-02

1,33E-01

3,14E-01

8,40E-02

4,51E-02

2,36E+00

3,13E-01

6,13E-02

1,01E-02

6,01E-04

Copyright Vincotech

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Inverter Switch 2 Characteristics

figure 13.

IGBT

figure 14.

IGBT

Safe operating area

Gate voltage vs gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

100

17,5

15,0

12,5

10,0

7,5

10µs

10

1

100µs

1ms

10ms

100ms

DC

5,0

0,1

0,01

2,5

0,0

1

10

100

1000

10000

0

50

100

150

200

250

300

350

400

V

_CE(V)

Q_g(μC)

D =

I_C

=

single pulse

50

25

A

T_s=

T_j=

80

15

°C

V

°C

V_GE

=

T_j=

T_jmax

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Inverter Diode 2 Characteristics

figure 15.

FWD

figure 16.

FWD

Typical forward characteristics

Transient thermal impedance as a function of pulse width

I_F= f(V_F)

Z_th(j-s)= f(t_p)

1

70

60

50

40

30

20

10

0

10

0

10

-1

10

0,5

0,2

0,1

-2

10

0,05

0,02

0,01

0,005

0

-3

10

-5

-4

10

-3

10

-2

10

-1

10

0

1

2

0,0

0,5

1,0

1,5

2,0

2,5

3,0

10

t_p(s)

V_F(V)

t_p

=

250

μs

D =

t_p/ T

1,26

25 °C

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

FWD thermal model values

R (K/W)

τ (s)

7,18E-02

2,80E-01

5,13E-01

2,46E-01

1,49E-01

1,82E+00

1,58E-01

3,97E-02

7,61E-03

6,66E-04

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Thermistor Characteristics

figure 17.

Thermistor

Typical NTC characteristic as function of temperature

R_T= f(T)

6000

5000

4000

3000

2000

1000

0

20

40

60

80

100

120

140

T(°C)

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Inverter Switching Characteristics

figure 18.

IGBT

figure 19.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of IGBT turn on gate resistor

E = f(I_C)

E = f(R_g)

50

40

30

20

10

0

30

25

20

15

10

5

E_on

E_off

0

5

10

15

20

25

30

I_C(A)

0

25

50

75

100

125

150

R_g(Ω)

With an inductive load at

25 °C

T_j:

V_CE

V_GE

=

V_CE

V_GE

I_C

=

600

±15

32

V

Ω

125 °C

600

±15

15

V

A

125 °C

R_gon

R_goff

32

figure 20.

Rectifier

figure 21.

Rectifier

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of IGBT turn on gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

15,0

12,5

10,0

7,5

10

E_rec

8

6

4

5,0

2

2,5

0,0

0

5

10

15

20

25

30

0

25

50

75

100

125

150

R_g(Ω)

I_C(A)

With an inductive load at

25 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

32

V

Ω

125 °C

600

±15

15

V

A

125 °C

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23 Nov. 2022 / Revision 1

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Inverter Switching Characteristics

figure 22.

IGBT

figure 23.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of IGBT turn on gate resistor

t = f(I_C)

t = f(R_g)

0

10

0

10

t_d(on)

t_d(off)

t_r

t_f

-1

10

t_d(on)

t_d(off)

-1

10

t_f

t_r

-2

10

-2

10

-3

10

0

5

10

15

20

25

30

0

25

50

75

100

125

150

I_C(A)

R_g(Ω)

With an inductive load at

T_j=

125

600

±15

32

°C

V

125

600

±15

15

°C

V

V_CE

=

V_CE

=

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

A

32

figure 24.

Rectifier

figure 25.

Rectifier

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

4,0

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

3,5

3,0

2,5

2,0

1,5

1,0

0,5

0,0

t_rr

0

5

10

15

20

25

30

0

25

50

75

100

125

150

R_gon(Ω)

I_C(A)

With an inductive load at

25 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

32

V

Ω

125 °C

600

±15

15

V

A

125 °C

Copyright Vincotech

17

23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Inverter Switching Characteristics

figure 26.

Rectifier

figure 27.

Rectifier

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

70

60

50

40

30

20

10

0

45

40

35

30

25

20

15

10

5

Q_r

0

5

10

15

20

25

30

0

25

50

75

100

125

150

R_gon(Ω)

I_C(A)

With an inductive load at

25 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

32

V

Ω

125 °C

600

±15

15

V

A

125 °C

figure 28.

Rectifier

figure 29.

Rectifier

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

60

50

40

30

20

10

0

70

60

50

40

30

20

10

0

I_RM

0

5

10

15

20

25

30

0

25

50

75

100

125

150

R_gon(Ω)

I_C(A)

With an inductive load at

25 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

32

V

Ω

125 °C

600

±15

15

V

A

125 °C

Copyright Vincotech

18

23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Inverter Switching Characteristics

figure 30.

Rectifier

figure 31.

Rectifier

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

600

3000

2500

2000

1500

1000

500

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

500

400

300

200

100

0

5

10

15

20

25

30

I_C(A)

0

25

50

75

100

125

150

R

_gon(Ω)

With an inductive load at

25 °C

T_j:

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

32

V

Ω

125 °C

600

±15

15

V

A

125 °C

figure 32.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

35

I_{C MAX}

30

25

20

15

10

5

0

250

500

750

1000

1250

1500

V

_CE(V)

T_j=

At

125

°C

Ω

R_gon

R_goff

=

32

Ω

Copyright Vincotech

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23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Inverter Switching Characteristics 2

figure 33.

IGBT

figure 34.

IGBT

Typical switching energy losses as a function of collector current

Typical switching energy losses as a function of IGBT turn on gate resistor

E = f(I_C)

E = f(R_g)

25

20

15

10

5

20,0

17,5

15,0

12,5

10,0

7,5

E_on

E_off

5,0

E_off

2,5

0

0,0

0

20

40

60

80

100

I_C(A)

0

10

20

30

40

50

60

70

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

50

V

A

125 °C

150 °C

T_j:

R_gon

R_goff

16

figure 35.

FWD

figure 36.

FWD

Typical reverse recovered energy loss as a function of collector current

Typical reverse recovered energy loss as a function of IGBT turn on gate resistor

E_rec= f(I_C)

E_rec= f(R_g)

2,00

1,75

1,50

1,25

1,00

0,75

0,50

0,25

0,00

2,5

2,0

1,5

1,0

0,5

0,0

E_rec

0

20

40

60

80

100

0

10

20

30

40

50

60

70

I_C(A)

R_g(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

50

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

20

23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Inverter Switching Characteristics 2

figure 37.

IGBT

figure 38.

IGBT

Typical switching times as a function of collector current

Typical switching times as a function of IGBT turn on gate resistor

t = f(I_C)

t = f(R_g)

0

10

1

10

t_d(on)

t_d(off)

t_d(on)

t_d(off)

0

10

t_r

-1

10

t_f

-1

10

t_f

-2

10

-2

10

0

20

40

60

80

100

I_C(A)

0

10

20

30

40

50

60

70

R_g(Ω)

With an inductive load at

T_j=

150

600

±15

16

°C

V

150

600

±15

50

°C

V_CE

=

V_CE

=

V

A

V_GE

R_gon

R_goff

V_GE

I_C

V

Ω

16

figure 39.

FWD

figure 40.

FWD

Typical reverse recovery time as a function of collector current

Typical reverse recovery time as a function of IGBT turn on gate resistor

t_rr= f(I_C)

t_rr= f(R_gon)

0,7

0,6

0,5

0,4

0,3

0,2

0,1

0,0

0,8

0,7

0,6

0,5

0,4

0,3

0,2

0,1

0,0

t_rr

0

20

40

60

80

100

0

10

20

30

40

50

60

70

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

50

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

21

23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Inverter Switching Characteristics 2

figure 41.

FWD

figure 42.

FWD

Typical recovered charge as a function of collector current

Typical recovered charge as a function of IGBT turn on gate resistor

Q_r= f(I_C)

Q_r= f(R_gon)

7

6

5

4

3

2

1

0

7

6

5

4

3

2

1

0

Q_r

0

20

40

60

80

100

0

10

20

30

40

50

60

70

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

50

V

125 °C

150 °C

T_j:

V

A

figure 43.

FWD

figure 44.

FWD

Typical peak reverse recovery current as a function of collector current

Typical peak reverse recovery current as a function of IGBT turn on gate resistor

I_RM= f(I_C)

I_RM= f(R_gon)

22,5

20,0

17,5

15,0

12,5

10,0

7,5

35

30

25

20

15

10

5

I_RM

5,0

2,5

0,0

0

20

40

60

80

100

0

10

20

30

40

50

60

70

I_C(A)

R_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

50

V

125 °C

150 °C

T_j:

V

A

Copyright Vincotech

22

23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Inverter Switching Characteristics 2

figure 45.

FWD

figure 46.

FWD

Typical rate of fall of forward and reverse recovery current as a function of collector current

Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor

di_F/dt, di_rr/dt = f(I_C)

di_F/dt, di_rr/dt = f(R_gon)

600

700

600

500

400

300

200

100

0

di_F/dt ‒ ‒ ‒ ‒ ‒

di_rr/dt ──────

500

400

300

200

100

0

20

40

60

80

100

I_C(A)

0

10

20

30

40

50

60

70

R

_gon(Ω)

With an inductive load at

25 °C

V_CE

V_GE

R_gon

=

V_CE

V_GE

I_C

=

600

±15

16

V

Ω

125 °C

150 °C

600

±15

50

V

A

125 °C

150 °C

T_j:

figure 47.

IGBT

Reverse bias safe operating area

I_C= f(V_CE

)

120

I_{C MAX}

100

80

60

40

20

0

250

500

750

1000

1250

1500

V

_CE(V)

T_j=

At

150

°C

Ω

R_gon

R_goff

=

16

Ω

Copyright Vincotech

23

23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Switching Definitions

figure 48.

IGBT

figure 49.

IGBT

Turn-off Switching Waveforms & definition of t_doff, t_Eoff(t_tEoff= integrating time for E_off

)

Turn-on Switching Waveforms & definition of t_don, t_Eon(t_Eon= integrating time for E_on)

t_doff

%

V_{GE 90%}

V_{CE 90%}

I_C

V_GE

V_CE

t_don

t_Eoff

I_{C 1%}

V_{CE 3%}

V_CE

I_{C 10%}

V_{GE 10%}

t_Eon

t (µs)

figure 50.

IGBT

figure 51.

IGBT

Turn-off Switching Waveforms & definition of t_f

Turn-on Switching Waveforms & definition of t_r

fitted

%

I_C

I_{C 90%}

I_{C 60%}

V_CE

I_{C 90%}

I_{C 40%}

t_r

I_C10%

V_CE

C 10%

t_f

t (µs)

Copyright Vincotech

24

23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Switching Definitions

figure 52.

FWD

figure 53.

FWD

Turn-off Switching Waveforms & definition of t_rr

Turn-on Switching Waveforms & definition of t_Qr(t_Qr= integrating time for Q_r)

%

Q_r

t_rr

t_Qr

I_F

fitted

RRM 10%

V_F

RRM 90%

RRM 100%

t (µs)

Copyright Vincotech

25

23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Ordering Code

Version

Ordering Code

With std lid (6.5mm height) + no thermal grease

With thin lid (2.8mm height) + no thermal grease

80-M212WPA050M701-K750F71-/0A/

80-M212WPA050M701-K750F71-/0B/

80-M212WPA050M701-K750F71-/1A/

80-M212WPA050M701-K750F71-/1B/

80-M212WPA050M701-K750F71-/4A/

80-M212WPA050M701-K750F71-/4B/

80-M212WPA050M701-K750F71-/5A/

80-M212WPA050M701-K750F71-/5B/

With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)

With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)

With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)

With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)

With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)

With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)

Marking

Name

NN-NNNNNNNNNNNNNN-

TTTTTTVV

Date code

UL & VIN

Lot

Serial

Text

WWYY

UL VIN

LLLLL

SSSS

Type&Ver

Lot number

Serial

Date code

Datamatrix

TTTTTTTVV

LLLLL

SSSS

WWYY

Outline

Pin table [mm]

1

X

Y

Function

DC+2

34

35

36

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

not assembled

9 Se1

24,38

-21,8

0,03

2

not assembled

12,2

15,4

DC-1

3

24,38

-15,4

-12,2

G26

S26

4

not assembled

21,8

5

-9

Ph23

0,03

-8,5

G13

S12

6

-5,8

-21,8

7

not assembled

12,2

-18,6

Ph11

8

24,38

16,58

13,42

G25

-15,4

9

15,4

18,6

21,8

12,2

15,4

18,6

21,8

-21,8

DC-23

Therm2

G23

not assembled

-5,8

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

-12,22

G11

G14

0,7

DC-22

Therm1

DC+2

3,9

S14

7,1

Ph12

10,3

not assembled

21,8

not assembled

-15,4

13,42

G24

S24

-12,22

-24,38

G15

G12

-12,2

-21,8

-9

Ph22

not assembled

-5,8

not assembled

12,2

-24,38

-12,2

-9

DC+1

8,38

G21

-5,8

15,4

18,6

DC-21

not assembled

7,1

not assembled

2,46

-21,8

not assembled

-15,4

DC+2

-24,38

G16

S16

15,4

2,46

G22

S22

18,6

Ph13

-12,2

21,8

-9

Ph21

-5,8

Pad positions refers to center point. For more informations on pad design please see package data

Copyright Vincotech

26

23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Pinout

DC+2

1,16,28

DC+1

56,57,58

T22

T24

T26

T12

T14

T16

D21

D23

D25

D11

D13

D15

G12

53

G14

G16

G22

30

G24

G26

46

62

18

3

S12

40

S14

47

S16

63

S22

31

S24

19

S26

4

Ph21

Ph11

32,33

41,42

Ph22

Ph12

20,21

48,49

Ph23

5,6

Ph13

64,65

T21

T23

T25

T11

T13

T15

D22

D24

D26

D12

D14

D16

G21

24

G23

12

G25

8

G11

45

G13

39

G15

52

Rt

Se1

35

DC-21

25,26

DC-22

13,14

DC-23

9,10

DC-1

Therm1

15

Therm2

11

36,37

Identification

Component

Voltage

Current

Function

Comment

ID

T11, T12, T13, T14,

IGBT

1200 V

15 A

Inverter Switch

Inverter Diode

T15, T16

D11, D12, D13, D14,

D15, D16

Rectifier

IGBT

1600 V

1200 V

18 A

50 A

25 A

T21, T22, T23, T24,

T25, T26

Inverter Switch 2

D21, D22, D23, D24,

D25, D26

FWD

Inverter Diode 2

Thermistor

Rt

Thermistor

Copyright Vincotech

27

23 Nov. 2022 / Revision 1

80-M212WPA050M701-K750F71

datasheet

Packaging instruction

Handling instruction

Standard packaging quantity (SPQ) 72

>SPQ

Standard

<SPQ

Sample

Handling instructions for MiniSKiiP^®2 packages see vincotech.com website.

Package data

Package data for MiniSKiiP^®2 packages see vincotech.com website.

Vincotech thermistor reference

See Vincotech thermistor reference table at vincotech.com website.

UL recognition and file number

This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.

Document No.:

Date:

Modification:

Pages

80-M212WPA050M701-K750F71-D1-14

23 Nov. 2022

DISCLAIMER

The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to

reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations

that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,

function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said

information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons

or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine

the suitability of the information and the product for reader’s intended use.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval

of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or effectiveness.

Copyright Vincotech

28

23 Nov. 2022 / Revision 1


型号：	80-M212WPA050M701-K750F71
厂家：	VINCOTECH
描述：	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件：	总28页 (文件大小：8812K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

80-M212WPA050M701-K750F71 [VINCOTECH]

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