80-M3122PA400M7-K830F7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 80-M3122PA400M7-K830F7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总18页 (文件大小：7214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M3122PA400M7-K830F70
datasheet
MiniSKiiP® DUAL 3
1200 V / 400 A
Features
MiniSKiiP® 3 16 mm housing
● IGBT Mitsubishi gen 7 technology with low VCEsat and
improved EMC behavior
● Solder-free spring contact technology
● Standard MiniSKiiP package sizes
● Built-in NTC
Schematic
Target applications
● Industrial Drives
● Power Supply
● Solar Inverters
● UPS
Types
● 80-M3122PA400M7-K830F70
Copyright Vincotech
1
30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Half-Bridge Switch
VCES
Collector-emitter voltage
1200
460
800
883
±20
9,5
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Half-Bridge Diode
VRRM
Peak repetitive reverse voltage
1200
303
800
536
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,04
400
25
5,4
6
6,6
V
V
25
1,53
1,71
1,75
1,85(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
400
2
µA
µA
Ω
20
None
84000
2800
1120
2800
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
0
10
25
25
Reverse transfer capacitance
Gate charge
VCC = 600 V
15
400
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,11
K/W
Dynamic
25
369
366
td(on)
Turn-on delay time
125
150
25
ns
ns
367
41
tr
Rise time
125
150
25
49
48
Rgon = 2 Ω
Rgoff = 2 Ω
339
td(off)
Turn-off delay time
Fall time
125
150
25
367
ns
373
±15
600
400
71,54
91,22
96,68
26,33
36,74
39,06
27,4
35,13
37,85
tf
125
150
25
ns
QrFWD=41,48 µC
QrFWD=62,92 µC
QrFWD=71,62 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Diode
Static
25
1,82
1,96
1,97
2,1(1)
160
VF
IR
Forward voltage
400
125
150
V
Reverse leakage current
Vr = 1200 V
25
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,18
K/W
Dynamic
25
377,36
392,8
405,45
273,65
420,45
457,89
41,48
62,92
71,62
15,82
24,25
27,87
5015
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=10059 A/µs
di/dt=9788 A/µs
di/dt=8678 A/µs
Qr
Recovered charge
±15
600
400
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
3117
3230
Copyright Vincotech
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30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1250
1250
VGE
:
7 V
8 V
9 V
1000
750
500
250
0
1000
750
500
250
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
400
10
-1
10
300
200
100
0
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
250
10
μs
V
D =
tp / T
0,108
25 °C
VCE
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,25E-02
1,79E-02
3,26E-02
2,34E-02
5,79E-03
5,38E-03
2,75E+00
7,60E-01
1,38E-01
4,75E-02
6,77E-03
8,68E-04
Copyright Vincotech
6
30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Half-Bridge Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
22,5
20,0
17,5
15,0
12,5
10,0
7,5
100µs
100
10
1ms
10ms
100ms
DC
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
500
1000
1500
2000
2500
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
A
Ts =
Tj =
80
15
°C
V
25
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
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30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Half-Bridge Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
1000
750
500
250
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
μs
1,5
2,0
2,5
3,0
3,5
4,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
D =
tp / T
0,177
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
3,71E-02
2,94E-02
5,37E-02
3,85E-02
9,53E-03
8,87E-03
2,75E+00
7,60E-01
1,38E-01
4,75E-02
6,77E-03
8,68E-04
Copyright Vincotech
8
30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Thermistor Characteristics
figure 9.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Half-Bridge Switching Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
125
100
75
50
25
0
150
125
100
75
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
50
Eoff
Eoff
Eoff
25
0
0
100
200
300
400
500
600
700
800
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 12.
FWD
figure 13.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
Erec
Erec
Erec
Erec
Erec
Erec
0
0
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
10
30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Half-Bridge Switching Characteristics
figure 14.
IGBT
figure 15.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
1
10
td(on)
td(off)
td(on)
0
10
td(off)
-1
10
tr
tf
tr
tf
-1
10
-2
10
-2
10
0
100
200
300
400
500
600
700
800
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
400
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 16.
FWD
figure 17.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
11
30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Half-Bridge Switching Characteristics
figure 18.
FWD
figure 19.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
120
100
80
60
40
20
0
90
80
70
60
50
40
30
20
10
0
Qr
Qr
Qr
Qr
Qr
Qr
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 20.
FWD
figure 21.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
500
400
300
200
100
0
1000
800
600
400
200
0
IRM
IRM
IRM
IRM
IRM
IRM
0
100
200
300
400
500
600
700
800
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
12
30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Half-Bridge Switching Characteristics
figure 22.
FWD
figure 23.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
12000
35000
30000
25000
20000
15000
10000
5000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
100
200
300
400
500
600
700
800
IC(A)
0
1
2
3
4
5
6
7
8
9
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
400
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 24.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
900
IC MAX
800
700
600
500
400
300
200
100
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
13
30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Half-Bridge Switching Definitions
figure 25.
IGBT
figure 26.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 27.
IGBT
figure 28.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Half-Bridge Switching Definitions
figure 29.
FWD
figure 30.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M3122PA400M7-K830F70-/0A/
80-M3122PA400M7-K830F70-/0B/
80-M3122PA400M7-K830F70-/1A/
80-M3122PA400M7-K830F70-/1B/
80-M3122PA400M7-K830F70-/4A/
80-M3122PA400M7-K830F70-/4B/
80-M3122PA400M7-K830F70-/5A/
80-M3122PA400M7-K830F70-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
Ph
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
9,95
9,95
-15,4
-12,2
-9
-DC
-DC
-53,95
-53,95
-53,95
-53,95
-53,95
-53,95
-53,95
-53,95
-49,95
-49,95
-49,95
-49,95
-49,95
-49,95
-49,95
-49,95
-51,75
-51,75
-20,25
-20,25
-17,8
-14,6
-11,4
-8,2
-5
2
Ph
9,95
-DC
3
Ph
9,95
-5,8
-25
-DC
4
Ph
13,95
13,95
13,95
13,95
13,95
13,95
13,95
9,95
-DC
5
Ph
-21,8
-18,6
-15,4
-12,2
-9
-DC
6
-1,8
1,4
Ph
-DC
7
Ph
-DC
8
4,6
Ph
-DC
9
-17,8
-14,6
-11,4
-8,2
-5
Ph
-DC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Ph
-5,8
5,8
-DC
Ph
+DC
+DC
+DC
+DC
+DC
+DC
+DC
+DC
+DC
+DC
+DC
+DC
+DC
+DC
Ph
9,95
9
Ph
9,95
12,2
15,4
18,6
21,8
25
-1,8
1,4
Ph
9,95
Ph
9,95
4,6
Ph
9,95
21,8
25,4
-25,4
-22
Therm1
Therm2
G11
S11
9,95
13,95
13,95
13,95
13,95
13,95
13,95
13,95
5,8
9
12,2
15,4
18,6
21,8
25
not assembled
21,8
-20,15
-20,15
9,95
S12
G12
-DC
-DC
25,4
-25
9,95
-21,8
26
9,95
-18,6
-DC
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
16
30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Pinout
DC+
38-51
T12-a,-b,-c,-d
D11-a,-b,-c,-d
G12
23
S12
22
Ph
1-16
T11-a,-b,-c,-d
D12-a,-b,-c,-d
G11
19
S11
20
Rt
24-37
DC-
17
Therm1
18
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
Rt
IGBT
FWD
1200 V
1200 V
400 A
400 A
Half-Bridge Switch
Half-Bridge Diode
Thermistor
Thermistor
Copyright Vincotech
17
30 Sep. 2021 / Revision 3
80-M3122PA400M7-K830F70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 48
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Change of CTI value
Change of Inverter Switch and Diode Tau times
80-M3122PA400M7-K830F70-D3-14
30 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
30 Sep. 2021 / Revision 3
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