80-M212PMB035M7-K220A71 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 80-M212PMB035M7-K220A71 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总18页 (文件大小：3741K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M212PMB035M7-K220A71
datasheet
MiniSKiiP® PIM 2
1200 V / 35 A
Features
MiniSkiip® 2 housing
● IGBT M7 with low VCEsat and improved EMC behavior
● Open emitter configuration
● Solder-free spring contact technology
● Built-in PTC
Schematic
Target applications
● Industrial Drives
Types
● 80-M212PMB035M7-K220A71
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
IF
Peak repetitive reverse voltage
1600
49
V
A
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
270
50 Hz Single Half Sine Wave
tp = 10 ms
Surge current capability
370
A2s
I2t
Ptot
Total power dissipation
Tj = Tjmax
64
W
Tjmax
Maximum junction temperature
150
°C
Copyright Vincotech
1
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter / Brake Switch
VCES
IC
Collector-emitter voltage
1200
49
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
70
A
129
±20
9,5
175
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
Inverter / Brake Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
45
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
70
A
Tj = Tjmax
89
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Visol
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
6,3
mm
mm
For more informations see handling in-
structions
With std lid
For more informations see handling in-
structions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
2
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,17
1,13
1,55
100
Forward voltage
Reverse leakage current
Thermal
VF
IR
35
V
125
1600
25
µA
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,10
K/W
Copyright Vincotech
3
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter / Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,0035 25
25
5,4
6,0
6,6
2
V
V
1,48
1,64
1,68
Collector-emitter saturation voltage
VCEsat
15
35
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
120
500
µA
nA
Ω
20
25
none
7900
270
97
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
35
260
nC
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
0,73
K/W
Dynamic
25
124
122
121
14
Turn-on delay time
td(on)
125
150
25
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
17
18
Rgon = 8 Ω
Rgoff = 8 Ω
ns
179
203
208
95
118
119
1,45
1,92
2,09
2,40
3,17
Turn-off delay time
Fall time
td(off)
±15
600
35
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 4,3 μC
= 6,2 μC
= 6,9 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
3,42
Copyright Vincotech
4
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter / Brake Diode
Static
25
125
150
1,66
1,76
1,75
2,2
40
VF
IR
Forward voltage
35
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,06
K/W
Dynamic
25
77
76
77
IRRM
125
150
25
Peak recovery current
A
157
trr
125
150
25
125
150
25
125
150
25
125
150
284
311
Reverse recovery time
Recovered charge
ns
di/dt = 2681 A/μs
di/dt = 2670 A/μs
di/dt = 2690 A/μs
4,34
6,18
6,90
1,96
2,82
3,13
2734
2205
2101
Qr
±15
600
35
μC
Erec
Reverse recovered energy
mWs
A/µs
(dirf/dt)max
Peak rate of fall of recovery current
Thermistor
Rated resistance
R
ΔR/R
R
25
1
kΩ
%
Deviation of R100
R100
R100 = 1670 Ω
100
100
25
-2
+2
1670
0,76
Ω
Power dissipation constant
A-value
mW/K
1/K
1/K²
A(25/50)
7,635*10-3
1,731*10-5
25
B(25/100)
B-value
25
Vincotech PTC Reference
E
Copyright Vincotech
5
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Rectifier Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
80
70
60
50
40
30
20
10
0
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
VF (V)
tp
=
250
μs
25 °C
125 °C
D =
t p / T
1,10
Tj:
R th(j-s)
K/W
Diode thermal model values
R (K/W)
τ (s)
1,03E-01
1,17E-01
5,19E-01
2,38E-01
7,64E-02
4,71E-02
7,04E+00
3,94E-01
5,87E-02
2,15E-02
3,49E-03
6,93E-04
Copyright Vincotech
6
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Inverter / Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
120
120
VGE
:
7
V
V
V
I
8
9
I
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
90
60
30
0
90
60
30
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
35
I
30
Z
25
20
15
10
5
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
3
6
9
12
VG E (V)
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,73
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,73E-02
5,12E-02
1,36E-01
3,93E-01
7,33E-02
4,92E-02
3,39E-03
5,47E+00
4,66E-01
8,32E-02
2,78E-02
5,41E-03
8,30E-04
4,01E-04
Copyright Vincotech
7
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Inverter / Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
100
100ms
DC
1ms
10µs
10ms
100µs
I
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
=
single pulse
D
Ts
=
80
ºC
VGE
=
±15
Tjmax
V
Tj =
Copyright Vincotech
8
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Inverter / Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
105
90
75
60
45
30
15
0
100
Z
10-1
10-2
10-3
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-5
=
10-4
10-3
10-2
10-1
100
101
102
0
1
2
3
4
VF (V)
tp (s)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
t p / T
Tj:
R th(j-s)
1,06
K/W
FWD thermal model values
R (K/W)
τ (s)
3,96E-02
7,42E-02
1,97E-01
5,70E-01
1,06E-01
7,13E-02
4,92E-03
7,93E+00
6,75E-01
1,21E-01
4,03E-02
7,84E-03
1,20E-03
5,81E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical PTC characteristic
as a function of temperature
R = f(T)
PTC-typical temperature characteristic
2000
1500
1000
500
0
25
50
75
100
125
T (°C)
Copyright Vincotech
9
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Inverter / Brake Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(Rg)
E = f(IC
)
6
6
Eon
Eon
E
E
5
Eoff
Eoff
5
Eon
4
3
2
1
0
4
3
2
1
0
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eoff
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
35
Rg (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
V CE
=
=
=
=
600
±15
8
V
V
Ω
Ω
:
j
VCE
VGE
IC
=
=
=
600
±15
35
V
Tj:
T
125 °C
150 °C
125 °C
150 °C
V GE
V
A
R
gon
goff
8
R
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(Ic)
Erec = f(R g)
5
5
E
E
Erec
Erec
4
4
3
2
1
0
3
2
1
0
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
T j
:
V CE
V GE
600
±15
8
V
V
Ω
600
±15
35
V
V
A
=
=
=
VCE
VGE
IC
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R
gon
Copyright Vincotech
10
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Inverter / Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
1
1
td(on)
t
t
td(off )
td(off )
tf
td(on)
0,1
0,1
tr
tf
tr
0,01
0,01
0,001
0,001
0
5
10
15
20
25
30
35
Rg (Ω)
0
10
20
30
40
50
60
70
IC (A)
With an inductive load at
With an inductive load at
T j
V CE
V GE
=
=
=
=
=
150
600
±15
8
°C
Tj =
150
600
±15
35
°C
V
V
V
Ω
Ω
VCE
=
=
=
V
VGE
IC
A
R
gon
8
R
goff
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC
)
trr = f(R gon)
0,5
0,8
t
0,7
t
0,4
trr
trr
0,6
0,5
0,4
0,3
0,2
0,1
trr
trr
0,3
0,2
0,1
trr
trr
0
0
0
0
10
600
20
30
40
50
60
70
5
10
15
20
25
30
35
Rg on (Ω)
IC (A)
At
V CE
=
V
V
Ω
At
VCE
=
600
V
V
A
25 °C
25 °C
±15
8
±15
35
V
=
=
T j:
VGE
IC
=
Tj:
GE
125 °C
150 °C
125 °C
150 °C
R
=
gon
Copyright Vincotech
11
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Inverter / Brake Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
12
10
Q
Q
10
8
Qr
Qr
8
6
4
2
Qr
Qr
6
4
2
Qr
Qr
0
0
0
0
10
600
20
30
40
50
60
70
5
10
15
20
25
30
35
Rgon (Ω)
IC (A)
V
V
Ω
600
±15
35
V
V
A
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
25 °C
25 °C
±15
8
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
120
180
I
I
IRM
IRM
90
135
IRM
90
45
60
30
IRM
IRM
IRM
0
0
0
0
5
10
15
20
25
30
35
Rgo n (Ω)
10
20
30
40
50
60
70
IC (A)
600
±15
8
V
600
±15
35
V
V
A
At
VCE
=
At
VCE
VGE
I C
=
25 °C
25 °C
V
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Ω
=
Copyright Vincotech
12
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Inverter / Brake Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(IC
)
diF/dt, di rr/dt = f(R gon
)
15000
5000
diF/
dt
diF/dt
t
t
dirr
/
dt
dirr/dt
i
i
12000
4000
9000
6000
3000
0
3000
2000
1000
0
0
0
5
10
15
20
25
30
35
Rg on (Ω)
10
20
30
40
50
60
70
IC (A)
At
V
CE
=
600
±15
8
V
25 °C
125 °C
150 °C
At
VCE
VGE
IC=
=
600
±15
35
V
25 °C
125 °C
150 °C
V
:
Tj
V
A
:
Tj
V
=
=
=
GE
Ω
R
gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
80
IC MAX
I
70
60
50
40
30
20
10
0
I
I
V
0
200
400
600
800
1000
1200
1400
VC E (V)
At
Tj
=
=
=
125
°C
Ω
8
8
R gon
R goff
Ω
Copyright Vincotech
13
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Inverter / Brake Switching Definitions
General conditions
125 °C
T j
=
=
=
8 Ω
8 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon
=
integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
V
V
I
GE (100%) =
C (100%) =
C (100%) =
V
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
600
35
V
600
35
V
A
A
203
ns
122
ns
t
=
tdon
=
doff
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
600
35
V
600
35
V
VC (100%) =
VC (100%) =
IC (100%) =
tr =
I
C (100%) =
A
A
t
=
118
ns
17
ns
f
Copyright Vincotech
14
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Inverter / Brake Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
600
35
V
IF (100%) =
Qr (100%) =
35
A
A
6,18
μC
I
F (100%) =
76
A
I
RRM (100%) =
t rr
=
284
ns
Copyright Vincotech
15
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Ordering Code & Marking
Version
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
Ordering Code
80-M212PMB035M7-K220A71-/0A/
80-M212PMB035M7-K220A71-/0B/
80-M212PMB035M7-K220A71-/1A/
80-M212PMB035M7-K220A71-/1B/
80-M212PMB035M7-K220A71-/4A/
80-M212PMB035M7-K220A71-/4B/
80-M212PMB035M7-K220A71-/5A/
80-M212PMB035M7-K220A71-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
PCB pad table
PCB pad table
Pin
X
Y
Pin
48 -12,22
49
50 -12,22 15,4 DC-Rect
51
52 -12,22 21,8 DC-Rect
53 -24,38 -21,8 ACIn3
Not assembled
X
Y
Function
G16
Function
24,38 -21,8
24,38 -18,6
24,38 -15,4
1
2
7,1
DC+Br
S16
Ph3
Not assembled
3
4
Not assembled
-9 Ph3
Not assembled
5
24,38
6
Not assembled
Not assembled
7
54
8
24,38
24,38
24,38
12,2
15,4
18,6
G15
55 -24,38 -15,4
ACIn3
9
DC-3
Therm1
Therm2
G13
DC-3
DC-2
DC-2
G14
56
57
58
Not assembled
10
Not assembled
Not assembled
11
12
13
24,38
16,58
16,58
21,8
12,2
15,4
59 -24,38 -2,5
ACIn2
60
Not assembled
14
15
16
17
18
19
20
21
22
16,58
16,58
18,6
21,8
61 -24,38
3,9
ACIn2
62
63 -24,38 15,4
Not assembled
ACIn1
Not assembled
13,42 -21,8
Not assembled
64
13,42 -15,4
13,42 -12,2
S14
Ph2
65 -24,38 21,8
ACIn1
Not assembled
-5,8 Ph2
13,42
8,38
Not assembled
Not assembled
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
12,2
G11
Not assembled
8,38
8,38
2,46
18,6
21,8
DC-1
DC-1
G12
-21,8
Not assembled
2,46
2,46
-15,4
-12,2
S12
Ph1
Not assembled
2,46
-0,01
-0,01
-5,8
5,85
9,05
Ph1
Br
Br
Not assembled
Not assembled
-0,01 18,65
G27
0,03
-8,5
-8,5
21,8
-21,8
-18,6
DC-Br
DC+Rect
DC+Rect
Not assembled
-8,5
-12,2
DC+Inv
Not assembled
45 -12,22 -5,8
DC+Inv
DC+Br
46 -12,22
47
0,7
Not assembled
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
16
29 Sep. 2020 / Revision 3
80-M212PMB035M7-K220A71
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D31, D32, D33, D34,
D35, D36
Rectifier
1600 V
35 A
35 A
35 A
Rectifier Diode
Inverter Switch
Inverter Diode
T11, T12, T13, T14,
T15, T16
IGBT
FWD
1200 V
1200 V
D11, D12, D13, D14,
D15, D16
T27
D27
Rt
IGBT
FWD
PTC
1200 V
1200 V
35 A
35 A
Brake Switch
Brake Diode
Thermistor
Copyright Vincotech
17
17 May. 2019 / Revision 2
80-M212PMB035M7-K220A71
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 72
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 2 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M212PMB035M7-K220A71-D3-14
29 Sep. 2020
Correction of PCB pad table
16
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
29 Sep. 2020 / Revision 3
相关型号：
80-M212PMB050M7-K740A71
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M212PNB015M7-K778C7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M212WPA015M7-K757F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M212WPA035SC-K389F
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M212WPA050M7-K750F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M212WPA050M701-K750F71
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M212WPB025SC-K388F
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
80-M2166BA075AS-K369G71
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M3122PA300M7-K839F7
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
80-M3122PA300SC-K839F42
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
©2020 ICPDF网 联系我们和版权申明