10-PG06PPA030SJ-LJ02B08T [VINCOTECH]
5us short circuit withstand time;High speed switching;Low EMI;Short tail current;![10-PG06PPA030SJ-LJ02B08T](http://pdffile.icpdf.com/pdf2/p00370/img/icpdf/10-PG06PPA03_2256533_icpdf.jpg)
型号: | 10-PG06PPA030SJ-LJ02B08T |
厂家: | ![]() |
描述: | 5us short circuit withstand time;High speed switching;Low EMI;Short tail current |
文件: | 总32页 (文件大小:3742K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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10-PG06PPA030SJ-LJ02B08T
datasheet
flowPIM 1 + PFC
600 V / 30 A
Features
flow 1 12mm housing
● One-phase rectifier
● Interleaved PFC circuit
● High speed IGBT in the inverter
● Integrated shunts and capacitors
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-PG06PPA030SJ-LJ02B08T
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1600
44
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
270
365
64
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
150
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
600
30
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
63
W
V
±20
5
Short circuit ratings
VGE = 15 V
Vcc = 400 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
600
28
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
40
A
Tj = Tjmax
50
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VCES
IC
Collector-emitter voltage
650
29
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
tp limited by Tjmax
90
A
Tj ≤ 175°C, VCE ≤ 650 V
Tj = Tjmax
90
A
Ptot
VGES
Tjmax
Ts = 80 °C
68
W
V
Gate-emitter voltage
±20
175
Maximum junction temperature
°C
PFC Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
32
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
180
59
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
PFC Sw. Protection Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
8
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
12
A
Tj = Tjmax
38
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (PFC)
VMAX
Top
Maximum DC voltage
630
V
Operation Temperature
-55…+125
°C
PFC Shunt
IMAX
Ptot
Max DC current
Tc = 25 °C
Tc = 70 °C
32
2
A
Power dissipation
W
Shunt
IMAX
Ptot
Max DC current
Tc = 25 °C
Tc = 70 °C
32
2
A
Power dissipation
W
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
7,82
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,14
1,10
1,8
VF
IR
Forward voltage
Reverse leakage current
Thermal
31
V
125
25
100
1600
150
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,10
K/W
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00048 25
25
4,1
5,1
5,7
2
V
V
1,73
1,97
2,01
VCEsat
Collector-emitter saturation voltage
15
30
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
600
0
25
25
29
µA
nA
Ω
20
200
none
1050
45
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
36
15
480
30
130
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,52
K/W
Dynamic
25
37
38
38
td(on)
125
150
25
Turn-on delay time
12
tr
Rise time
125
150
25
13
15
90
Rgon = 8 Ω
Rgoff = 8 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
109
113
12
19
23
0,758
0,981
1,040
0,233
±15
350
30
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 0,8 μC
= 1,8 μC
= 2 μC
Eon
Turn-on energy (per pulse)
mWs
Eoff
Turn-off energy (per pulse)
125
150
0,422
0,469
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,70
1,58
2,05
27
VF
IR
Forward voltage
Reverse leakage current
Thermal
20
V
125
600
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,91
K/W
Dynamic
25
8
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
12
13
Peak recovery current
A
201
276
328
0,812
1,814
2,025
0,161
0,388
0,431
54
trr
Qr
Reverse recovery time
ns
di/dt = 500 A/μs
di/dt = 1295 A/μs
di/dt = 1294 A/μs
±15
350
30
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
61
82
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
PFC Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0003 25
3,3
4
4,7
V
V
25
1,97
2,24
2,35
15
0
30
125
650
0
25
25
40
µA
nA
Ω
20
200
none
2100
45
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
7,7
15
520
30
65
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,39
K/W
Dynamic
25
12
12
13
td(on)
125
150
25
Turn-on delay time
8
tr
Rise time
125
150
25
8
8
80
Rgon = 8 Ω
Rgoff = 8 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
94
98
8
10
0 / 15
400
30
tf
10
0,391
0,524
0,451
0,086
Qr
FWD
Qr
FWD
Qr
FWD
= 0,4 μC
= 1 μC
= 1,2 μC
Eon
Turn-on energy (per pulse)
mWs
Eoff
Turn-off energy (per pulse)
125
150
0,207
0,332
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
PFC Diode
Static
25
2,46
2,03
2,8
10
VF
IR
Forward voltage
Reverse leakage current
Thermal
30
V
125
650
400
650
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,61
K/W
Dynamic
25
24
40
45
19
47
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
Peak recovery current
A
trr
Qr
Reverse recovery time
ns
50
di/dt = 4524 A/μs
di/dt = 4528 A/μs
di/dt = 4350 A/μs
0,394
0,956
1,172
0,088
0,221
0,275
2361
2958
3147
0 / 15
30
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
PFC Sw. Protection Diode
Static
25
1,73
1,59
1,54
2
VF
IR
125
150
Forward voltage
6
V
Reverse leakage current
25
0,1
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,53
33
K/W
Capacitor (PFC)
Capacitance
C
nF
%
Tolerance
-5
+5
Copyright Vincotech
8
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
PFC Shunt
R
Resistance
2
1
mΩ
%
Tolerance*
Temperature coefficient
tc
20 - 60
75
ppm/K
* Nominal tolerance of the component as shown in manufacturer’s datasheet. Not tested in production
Shunt
R
Resistance
2
1
mΩ
%
Tolerance*
Temperature coefficient
tc
20 - 60
75
ppm/K
* Nominal tolerance of the component as shown in manufacturer’s datasheet. Not tested in production
Thermistor
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
5
mW
mW/K
K
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
25
3962
4000
B(25/100)
B-value
25
K
Vincotech NTC Reference
I
Copyright Vincotech
9
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Rectifier Diode Characteristics
figure 1.
Rectifier Diode
figure 2.
Rectifier Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
100
Z
75
50
25
0
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
D =
tp / T
1,10
Tj:
125 °C
R th(j-s)
=
K/W
Diode thermal model values
R (K/W)
τ (s)
4,35E-02
9,34E-02
3,79E-01
3,82E-01
1,24E-01
7,66E-02
3,78E+00
6,17E-01
8,75E-02
2,72E-02
5,56E-03
1,02E-03
Copyright Vincotech
10
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
100
100
VGE
:
7 V
I
I
8 V
9 V
80
60
40
20
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
80
60
40
20
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
30
I
25
Z
100
20
15
10
5
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
10
12
VG E (V)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
1,52
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,77E-01
6,88E-01
3,07E-01
2,02E-01
6,94E-02
7,56E-02
4,07E-01
7,37E-02
2,16E-02
4,82E-03
7,03E-04
2,19E-04
Copyright Vincotech
11
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
1ms
100µs
10µs
16
100
10ms
100ms
DC
120 V
V
I
14
480 V
12
10
8
10
1
6
4
0,1
2
0
0,01
0
25
50
75
100
125
150
1
10
100
1000
QG (nC)
VC E (V)
D =
single pulse
80 ºC
I C =
30
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
figure 7.
IGBT
figure 8.
IGBT
Short circuit duration as a function of VGE
Typical short circuit current as a function of VGE
tpSC = f(VGE
)
I SC = f(VGE)
16
250
I
t
14
200
12
10
8
150
100
50
6
4
2
0
0
12
13
14
15
16
17
18
19
20
10
11
12
13
14
15
VG E (V)
VG E (V)
VCE
=
VCE
≤
400
150
V
ºC
400
25
V
ºC
Tj ≤
Tj ≤
Copyright Vincotech
12
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
60
100
Z
45
30
15
0
10-1
10-2
10-3
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-5
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
VF (V)
tp
=
250
μs
25 °C
D =
tp / T
Tj:
125 °C
R th(j-s)
=
1,91
K/W
FWD thermal model values
R (K/W)
τ (s)
8,07E-02
2,18E-01
8,50E-01
4,32E-01
2,00E-01
1,34E-01
2,12E+00
2,13E-01
4,23E-02
8,96E-03
1,53E-03
2,03E-04
Copyright Vincotech
13
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
PFC Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
100
100
VGE
:
7 V
I
I
8 V
9 V
80
60
40
20
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
80
60
40
20
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
tp
=
250
125
7 V to 17 V in steps of 1 V
μs
Tj:
VGE
=
V
125 °C
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
30
I
25
Z
100
20
15
10
5
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
2
4
6
8
VG E (V)
tp
=
100
10
μs
25 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
V
125 °C
=
1,39
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,66E-02
1,95E-01
5,59E-01
3,47E-01
9,37E-02
1,12E-01
9,60E-01
1,81E-01
4,84E-02
9,35E-03
1,74E-03
2,76E-04
Copyright Vincotech
14
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
PFC Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
16
100
130 V
V
I
14
520 V
12
10
8
10
1
6
4
0,1
2
0
0,01
1
0
10
20
30
40
50
60
70
80
10
100
1000
QG (nC)
VC E (V)
D =
single pulse
80 ºC
I C =
30
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
15
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
PFC Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
90
75
60
45
30
15
0
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
D =
tp / T
1,61
Tj:
125 °C
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
6,26E-02
1,57E-01
5,80E-01
4,30E-01
2,34E-01
1,51E-01
3,66E+00
4,37E-01
6,90E-02
1,72E-02
3,04E-03
5,73E-04
Copyright Vincotech
16
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
PFC Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
18
15
12
9
Z
100
0,5
10-1
6
0,2
0,1
0,05
0,02
0,01
0,005
0
3
10-2
0
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
2,53
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
9,24E-02
1,75E-01
7,31E-01
7,14E-01
4,89E-01
3,27E-01
7,87E+00
2,72E-01
4,21E-02
9,84E-03
1,79E-03
3,20E-04
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
17
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
3
2
Eon
Eon
E
E
2,5
Eon
Eon
1,5
Eon
2
1,5
1
Eon
1
0,5
0
Eoff
Eoff
Eoff
Eoff
0,5
Eoff
Eoff
0
0
10
20
30
40
25 °C
50
60
0
10
20
30
25 °C
40
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
350
±15
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
0,6
0,6
Erec
Erec
E
E
0,5
0,5
0,4
0,3
0,2
0,1
0
0,4
0,3
0,2
0,1
0
Erec
Erec
Erec
Erec
0
10
20
30
40
0
10
20
30
40
50
60
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
±15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
18
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
td(off)
td(off)
0,1
0,1
td(on)
tr
td(on)
tf
tf
0,01
0,01
tr
0,001
0,001
0
10
20
30
40
0
10
20
30
40
50
60
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
350
±15
8
°C
V
Tj =
150
350
±15
30
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,4
0,6
trr
trr
trr
trr
trr
t
t
0,5
0,3
trr
0,4
0,3
0,2
0,1
0,2
0,1
0
0
0
0
10
20
30
40
50
60
10
20
30
25 °C
40
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
350
±15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
19
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
3
2,5
Q
Qr
Qr
Q
2,5
2
Qr
Qr
2
1,5
1
1,5
1
Qr
Qr
0,5
0,5
0
0
0
0
10
20
30
40
25 °C
50
60
10
20
30
25 °C
40
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
350
±15
8
V
V
Ω
Tj:
VCE=
VGE =
I C=
350
±15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
20
50
I
I
40
15
IRM
IRM
30
20
10
10
5
IRM
IRM
IRM
IRM
0
0
0
0
10
20
30
25 °C
40
Rgo n (Ω)
10
20
30
40
25 °C
50
60
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
350
±15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
20
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
6000
5000
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
5000
4000
4000
3000
2000
1000
3000
2000
1000
0
0
0
0
10
20
30
25 °C
40
Rgon (Ω)
10
20
30
40
50
60
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
350
±15
8
V
V
Ω
Tj:
VCE =
VGE =
I C=
350
±15
30
V
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
70
IC MAX
I
60
I
50
40
30
20
10
0
I
V
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
21
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
8 Ω
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
30
V
350
30
V
A
A
tdoff
=
109
ns
tdon
=
38
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
350
30
V
VC (100%) =
I C (100%) =
350
30
V
A
A
19
ns
tr
=
13
ns
Copyright Vincotech
22
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
350
30
V
I F (100%) =
Q r (100%) =
30
A
A
1,81
μC
12
A
trr
=
276
ns
Copyright Vincotech
23
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
PFC Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
1
1
Eon
E
E
Eon
Eon
0,8
0,8
Eon
Eon
Eon
0,6
0,4
0,2
0
0,6
0,4
0,2
0
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
0
10
20
30
25 °C
40
Rg (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
=
400
0 / 15
8
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
0,4
0,5
E
E
Erec
0,4
0,3
Erec
0,3
0,2
0,1
0
Erec
Erec
0,2
0,1
0
Erec
Erec
0
10
20
30
40
0
10
20
30
40
50
60
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
400
0 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
24
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
PFC Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
td(off)
td(off)
0,1
0,1
td(on)
tr
td(on)
0,01
0,01
tf
tf
tr
0,001
0,001
0
10
20
30
40
0
10
20
30
40
50
60
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
400
0 / 15
8
°C
V
Tj =
150
400
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
0 / 15
30
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,08
0,12
t
t
trr
trr
trr
0,06
0,09
trr
0,04
0,02
0
0,06
0,03
trr
trr
0
0
0
10
20
30
40
50
60
10
20
30
25 °C
40
Rgon (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
400
0 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
25
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
PFC Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
2
1,5
Q
Q
Qr
Qr
1,2
1,5
Qr
Qr
0,9
0,6
0,3
1
Qr
0,5
Qr
0
0
0
0
10
20
30
40
25 °C
50
60
10
20
30
25 °C
40
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
400
0 / 15
8
V
V
Ω
Tj:
VCE=
VGE =
I C=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
60
70
IRM
IRM
I
I
60
50
50
40
30
20
10
40
30
20
10
IRM
IRM
IRM
IRM
0
0
0
0
10
20
30
25 °C
40
Rgo n (Ω)
10
20
30
40
25 °C
50
60
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
400
0 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
400
0 / 15
30
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
26
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
PFC Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
7000
6000
diF/dt
dir r/dt
diF/dt
dir r/dt
t
i
t
6000
i
5000
4000
3000
2000
1000
0
5000
4000
3000
2000
1000
0
0
10
20
30
40
Rgon (Ω)
0
10
20
30
40
50
60
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
400
0 / 15
8
V
V
Ω
Tj:
VCE =
VGE =
I C=
400
0 / 15
30
V
Tj:
125 °C
150 °C
125 °C
150 °C
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
70
IC MAX
I
60
I
50
40
30
20
10
0
I
V
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
27
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
PFC Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
8 Ω
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
400
30
94
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
V
400
30
V
A
A
tdoff
=
ns
tdon
=
12
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
400
30
V
VC (100%) =
I C (100%) =
400
30
8
V
A
A
10
ns
tr
=
ns
Copyright Vincotech
28
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
PFC Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
400
30
V
I F (100%) =
Q r (100%) =
30
A
A
0,96
μC
40
A
trr
=
47
ns
Copyright Vincotech
29
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with Press-fit pins
with thermal paste 12mm housing with Press-fit pins
Ordering Code
10-PG06PPA030SJ-LJ02B08T
10-PG06PPA030SJ-LJ02B08T-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
7,4
4,4
0
Function
S2sh1
50,5
49,5
45,5
42,8
38,5
38,5
38,5
31,8
31,8
25,1
1
2
S1sh1
DC-Rect
DC-Rect
PFC-
3
4
0
5
0
6
3
S1sh2
S2sh2
PFC+
7
6
8
1,2
3,9
1,9
9
PFC+
10
S1sh3
11
12
13
23,1
22,1
19,1
4,9
0
0
S2sh3
PFC-
Therm1
14
15
16
17
18
19
20
21
22
19,1
15
12
9
3
Therm2
G11
0
0
DC-1
G13
0
0
6
DC-2
G15
3
0
0
0
DC-3
DC+Inv
DC+Inv
0
15,15
17,85
0
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
0
25,5
28,5
25,5
28,5
25,5
28,5
16,3
19,3
28,5
28,5
19,3
19,3
28,5
28,5
28,5
28,5
17,2
14,45
G16
Ph3
0
7,7
G14
7,7
Ph2
15,4
15,4
21,7
21,7
23,4
31,1
32,9
35,9
39,1
41,8
49,8
52,5
44,3
44,3
G12
Ph1
G27
S27
PFC2
PFC1
G25
S25
DC+Rect
DC+Rect
ACIn1
ACIn1
ACIn2
ACIn2
Copyright Vincotech
30
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D31, D32, D33, D34
FWD
1600 V
31 A
Rectifier Diode
T11, T12, T13, T14,
T15, T16
IGBT
FWD
600 V
600 V
30 A
Inverter Switch
D11, D12, D13, D14,
D15, D16
20 A
Inverter Diode
T25, T27
D25, D27
D45, D47
C25, C27
SH1
IGBT
FWD
650 V
650 V
650 V
630 V
30 A
30 A
6 A
PFC Switch
PFC Diode
FWD
PFC Sw. Protection Diode
Capacitor (PFC)
PFC Shunt
Capacitor
Shunt
Shunt
NTC
32 A
32 A
SH2, SH3
Rt
Shunt
Thermistor
Copyright Vincotech
31
17 May. 2019 / Revision 2
10-PG06PPA030SJ-LJ02B08T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 Packaging instructions packages see vincotech.com website.
Package data
Package data for flow 1 Packaging instructions packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PG06PPA030SJ-LJ02B08T-D2-14
17 May. 2019
Correction of Ic/If values
1,2,3
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
17 May. 2019 / Revision 2
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