10-PG06PPA050SJ01-LH54E08T [VINCOTECH]
5us short circuit withstand time;High speed switching;Low EMI;Short tail current;
| 型号： | 10-PG06PPA050SJ01-LH54E08T |
| 厂家： | 
VINCOTECH |
| 描述： | 5us short circuit withstand time;High speed switching;Low EMI;Short tail current |
| 文件： | 总31页 (文件大小：8703K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PG06PPA050SJ01-LH54E08T
datasheet
flowPIM 1 + PFC
600 V / 50 A
Topology features
flow 1 12 mm housing
● 2-leg interleaved PFC + Inverter
● On-board Capacitors
● Open Emitter configuration
● Shunt
● Temperature sensor
Component features
● 5us short circuit withstand time
● High speed switching
● Low EMI
● Short tail current
Housing features
● Base isolation: Al2O3
Schematic
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-PG06PPA050SJ01-LH54E08T
Copyright Vincotech
1
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
49
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
81
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
5
tSC
Short circuit ratings
VGE = 15 V, VCC = 400 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
36
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
58
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VCES
Collector-emitter voltage
650
47
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
81
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
VRRM
Peak repetitive reverse voltage
600
53
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
120
480
73
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
PFC Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
650
18
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
33
W
°C
Tjmax
Maximum junction temperature
175
Inverter Shunt
I
DC current
31,6
2
A
Ptot
Top
Power dissipation
Tc = 70 °C
W
°C
Operation Temperature
-65 ... 170
PFC Shunt
I
DC current
31,6
2
A
Ptot
Top
Power dissipation
Tc = 70 °C
W
°C
Operation Temperature
-65 ... 170
Copyright Vincotech
3
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Shunt
I
DC current
63,2
4
A
Ptot
Top
Power dissipation
Tc = 70 °C
W
°C
Operation Temperature
-65 ... 170
Capacitor (PFC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 150
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
>12,7
8,05
V
AC Voltage
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
4
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0008
50
25
4,1
5,1
5,7
V
V
25
1,49
1,61
1,64
1,8(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
600
0
25
25
2,8
µA
nA
Ω
20
100
None
1950
83
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
67
VCC = 480 V
15
50
249
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,18
K/W
25
70
td(on)
Turn-on delay time
Rise time
125
150
25
70
ns
ns
71,2
45,2
43,2
42,8
114,8
133,6
138,6
22,47
34,2
41,12
1,84
2,2
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
50
tf
125
150
25
ns
QrFWD=1,62 µC
QrFWD=3,09 µC
QrFWD=3,57 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
2,28
0,536
0,839
0,941
Eoff
125
150
Copyright Vincotech
5
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,64
1,55
1,95(1)
27
VF
IR
Forward voltage
30
V
150
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,63
K/W
25
10,63
16,09
16,77
251,47
331,66
392,82
1,62
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=245 A/µs
di/dt=545 A/µs
di/dt=378 A/µs
Qr
Recovered charge
±15
350
50
125
150
25
3,09
μC
3,57
0,406
0,762
0,892
76,03
88,46
100,72
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
6
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0005
50
25
3,3
4
4,7
V
V
25
1,52
1,64
1,7
2,22(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
None
3000
50
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
11
VCC = 520 V
15
50
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,17
K/W
25
16,12
15,82
15,96
6,68
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
8,23
8,62
Rgon = 4 Ω
Rgoff = 4 Ω
86,51
103,58
108,24
2,44
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
400
50
tf
125
150
25
10,89
11,76
0,4
ns
QrFWD=0,799 µC
QrFWD=2,02 µC
QrFWD=2,53 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
0,758
0,884
0,315
0,457
0,492
mWs
mWs
Eoff
125
150
Copyright Vincotech
7
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,89
1,57
1,5
2,5(1)
VF
IR
Forward voltage
60
125
150
V
Reverse leakage current
Thermal
Vr = 600 V
25
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,3
K/W
25
76,33
106,22
117,33
20,32
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
35,44
ns
40,54
0,799
di/dt=6374 A/µs
di/dt=4375 A/µs
di/dt=4337 A/µs
Qr
Recovered charge
0/15
400
50
125
150
25
2,02
μC
2,53
0,164
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,419
mWs
A/µs
0,53
11479,58
8065,29
7530,06
(dirf/dt)max
125
150
Copyright Vincotech
8
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Sw. Protection Diode
Static
25
1,23
1,67
1,54
1,87(1)
0,14
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,87
K/W
Inverter Shunt
Static
R
Resistance
2
mΩ
Temperature coeficient
tc
275
275
275
ppm/K
PFC Shunt
Static
R
Resistance
2
mΩ
Temperature coeficient
tc
ppm/K
Shunt
Static
R
Resistance
1
mΩ
Temperature coeficient
tc
ppm/K
Copyright Vincotech
9
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (PFC)
Static
DC bias voltage =
0 V
C
Capacitance
Tolerance
25
33
nF
%
-5
5
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
125
VGE
:
7 V
8 V
125
100
75
50
25
0
9 V
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
=
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
50
10
40
30
20
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,176
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,28E-01
3,00E-01
5,67E-01
1,34E-01
4,70E-02
9,19E-01
1,49E-01
4,76E-02
6,63E-03
5,83E-04
Copyright Vincotech
11
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,633
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
7,13E-02
1,55E-01
7,25E-01
3,93E-01
1,57E-01
1,32E-01
2,70E+00
3,01E-01
5,48E-02
1,54E-02
2,76E-03
4,03E-04
Copyright Vincotech
13
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
PFC Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
125
VGE
:
7 V
8 V
125
100
75
50
25
0
9 V
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
50
10
40
30
20
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,174
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,21E-02
2,50E-01
4,87E-01
2,29E-01
4,67E-02
6,92E-02
1,52E+00
2,21E-01
5,30E-02
1,06E-02
2,01E-03
3,15E-04
Copyright Vincotech
14
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
PFC Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
PFC Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
175
150
125
100
75
10
0
10
-1
10
0,5
0,2
0,1
50
-2
10
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,299
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,87E-02
2,08E-01
7,02E-01
2,07E-01
1,14E-01
3,97E+00
5,47E-01
1,09E-01
1,20E-02
1,37E-03
Copyright Vincotech
16
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
PFC Sw. Protection Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,874
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
2,86E-01
5,75E-01
1,57E+00
3,05E-01
1,34E-01
1,08E+00
1,73E-01
4,54E-02
5,64E-03
5,58E-04
Copyright Vincotech
17
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
18
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
19
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
-1
10
tr
td(on)
tr
tf
-1
10
-2
10
tf
-3
10
-2
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
8
°C
V
150
350
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
20
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
6
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
5,0
IRM
2,5
0,0
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
2250
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2000
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
8
°C
Rgon
Rgoff
=
=
Ω
Ω
8
Copyright Vincotech
22
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
PFC Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
23
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
PFC Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-2
10
-3
10
td(off)
-1
-2
-3
10
10
10
td(on)
td(on)
tr
tf
tr
tf
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
4
°C
V
150
400
0/15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
24
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
PFC Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
150
125
100
75
IRM
IRM
IRM
IRM
IRM
50
50
IRM
25
25
0
0
0,0
0
20
40
60
80
100
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
25
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
PFC Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
15000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
Copyright Vincotech
26
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
27
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
28
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PG06PPA050SJ01-LH54E08T
10-PG06PPA050SJ01-LH54E08T-/7/
10-PG06PPA050SJ01-LH54E08T-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC+Inv
DC+Inv
Ph3
52,5
52,5
46,2
43,5
43,5
37,2
34,5
34,5
28,2
25,5
22,5
0
2,7
0
2
3
0
4
0
Ph3
5
3
G16
6
0
Ph2
7
0
Ph2
8
3
G14
9
0
Ph1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
0
Ph1
0
G12
0
PFC1
PFC2
S25
0
6,1
6,6
6,6
8,3
11,3
16,8
19,5
22,5
25,5
28,5
28,5
25,8
28,5
16,5
19,5
23,5
26,5
28,5
28,5
25,5
22,5
28,5
28,5
25,5
22,5
28,5
28,5
25,5
22,5
28,5
28,5
25,5
22,5
19,5
22,5
25,5
25,5
0
G25
S1sh2
S2sh2
DC-Rect
DC-Rect
S2sh1
S1sh1
DC-SH
DC-SH
PFC+
PFC+
S27
0
0
0
0
2,7
9,8
9,8
20,7
20,7
16,9
16,9
20,7
23,4
22
G27
S1sh3
S2sh3
PFC-
PFC-
Therm1
Therm2
DC-1
S2sh4
S1sh4
G11
22
27
33,5
33,5
33,5
36,5
43
DC-2
S2sh5
S1sh5
G13
43
43
46
DC-3
S2sh6
S1sh6
G15
52,5
52,5
52,5
not assembled
Copyright Vincotech
29
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Pinout
24,25
PFC+
1,2
DC+Inv
D25
D27
PFC1
PFC2
12
13
T12
T14
T16
D11
G14
D13
G16
D15
G12
11
8
5
Ph1
9,10
Ph2
C25
C27
6,7
3,4
Ph3
T25
15
T27
T11
T13
T15
D12
G13
D14
G15
D16
27
G25
S25
D47
D45
G27
S27
G11
37
41
45
14
26
S1sh2
16
S1sh3
28
S1sh4
36
S1sh5
40
S1sh6
44
SH2
SH3
SH4
SH5
SH6
17
29
35
39
43
SH1
S2sh2
S2sh3
S2sh4
S2sh5
S2sh6
DC-Rect
18,19
Rt
DC-1
34
DC-2
38
DC-3
42
PFC-
S2sh1 S1sh1
DC-SH
22,23
30,31
20
21
Therm1 Therm2
32 33
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
50 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
D15, D16
T25, T27
FWD
600 V
30 A
IGBT
FWD
650 V
600 V
650 V
50 A
60 A
10 A
PFC Switch
PFC Diode
D25, D27
D45, D47
SH4, SH5, SH6
SH2, SH3
SH1
FWD
PFC Sw. Protection Diode
Inverter Shunt
PFC Shunt
Shunt
Shunt
Shunt
Shunt
C25, C27
Rt
Capacitor
Thermistor
630 V
Capacitor (PFC)
Thermistor
Copyright Vincotech
30
15 Aug. 2022 / Revision 4
10-PG06PPA050SJ01-LH54E08T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PG06PPA050SJ01-LH54E08T-D4-14
15 Aug. 2022
Change of PFC Diode
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
31
15 Aug. 2022 / Revision 4
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