首页 |元器件品牌

10-PG06PPA050SJ-LJ04B08T [VINCOTECH]

5us short circuit withstand time;High speed switching;Low EMI;Short tail current;
10-PG06PPA050SJ-LJ04B08T
型号： 10-PG06PPA050SJ-LJ04B08T
厂家： VINCOTECH    VINCOTECH
描述：

5us short circuit withstand time;High speed switching;Low EMI;Short tail current
文件： 总32页 (文件大小：3607K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
10-PG06PPA050SJ-LJ04B08T  
datasheet  
flowPIM 1 + PFC  
600 V / 50 A  
Features  
flow 1 12 mm housing  
● One-phase rectifier  
● Interleaved PFC circuit  
● High speed IGBT in the inverter  
● Integrated shunts and capacitors  
Schematic  
Target applications  
● Embedded Drives  
● Industrial Drives  
Types  
● 10-PG06PPA050SJ-LJ04B08T  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Rectifier Diode  
VRRM  
IF  
IFSM  
I2t  
Ptot  
Tjmax  
Peak repetitive reverse voltage  
1600  
85  
V
A
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
890  
3960  
108  
150  
A
50 Hz Single Half Sine Wave  
tp = 10 ms  
A2s  
W
°C  
Total power dissipation  
Tj = Tjmax  
Maximum junction temperature  
Copyright Vincotech  
1
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Switch  
VCES  
IC  
Collector-emitter voltage  
600  
48  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
Ptot  
VGES  
tSC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
150  
81  
A
W
V
±20  
5
Short circuit ratings  
VGE = 15 V  
Vcc = 400 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Inverter Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
600  
35  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
60  
A
Tj = Tjmax  
58  
W
°C  
Tjmax  
Maximum junction temperature  
175  
PFC Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
47  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
150  
81  
A
W
V
±20  
175  
Maximum junction temperature  
°C  
PFC Diode  
VRRM  
IF  
Ptot  
Tjmax  
Peak repetitive reverse voltage  
650  
49  
V
A
Continuous (direct) forward current  
Total power dissipation  
Tj = Tjmax  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
84  
W
°C  
Maximum junction temperature  
175  
Copyright Vincotech  
2
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
PFC Sw. Protection Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
650  
14  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
20  
A
Tj = Tjmax  
33  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Capacitor (PFC)  
VMAX  
Top  
Maximum DC voltage  
630  
V
Operation Temperature  
-55…+125  
°C  
PFC Shunt  
IMAX  
Ptot  
Max DC current  
Tc = 25 °C  
Tc = 70 °C  
32  
2
A
Power dissipation  
W
Shunt  
IMAX  
Ptot  
Max DC current  
Tc = 25 °C  
Tc = 70 °C  
32  
2
A
Power dissipation  
W
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
tp = 1 min  
V
Creepage distance  
min. 12,7  
7,82  
mm  
mm  
Clearance  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
3
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Rectifier Diode  
Static  
25  
1,04  
0,97  
1,5  
VF  
IR  
Forward voltage  
Reverse leakage current  
Thermal  
60  
V
125  
25  
100  
1600  
150  
µA  
2000  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
0,65  
K/W  
Copyright Vincotech  
4
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0008 25  
25  
4,1  
5,1  
5,7  
2
V
V
1,48  
1,60  
1,64  
VCEsat  
Collector-emitter saturation voltage  
15  
50  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
600  
0
25  
25  
67  
µA  
nA  
Ω
20  
200  
none  
1950  
83  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
67  
15  
480  
50  
249  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,18  
K/W  
Dynamic  
25  
70  
70  
71  
td(on)  
125  
150  
25  
Turn-on delay time  
45  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
43  
43  
115  
134  
139  
22  
34  
41  
1,838  
2,198  
2,277  
0,536  
Rgon = 8 Ω  
Rgoff = 8 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
±15  
350  
50  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 1,6 μC  
= 3,1 μC  
= 3,6 μC  
Eon  
Turn-on energy (per pulse)  
mWs  
Eoff  
Turn-off energy (per pulse)  
125  
150  
0,839  
0,941  
Copyright Vincotech  
5
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Diode  
Static  
25  
1,64  
1,56  
2,05  
27  
VF  
IR  
Forward voltage  
Reverse leakage current  
Thermal  
30  
V
150  
600  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,63  
K/W  
Dynamic  
25  
11  
16  
17  
IRRM  
125  
150  
25  
Peak recovery current  
A
251  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
332  
393  
ns  
di/dt = 245 A/μs  
di/dt = 545 A/μs  
di/dt = 378 A/μs  
1,615  
3,089  
3,567  
0,406  
0,762  
0,892  
76  
±15  
350  
50  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
88  
101  
Copyright Vincotech  
6
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
PFC Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0005 25  
25  
3,3  
4
4,7  
V
V
1,51  
1,65  
1,69  
2,35  
VCEsat  
Collector-emitter saturation voltage  
15  
50  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
40  
µA  
nA  
Ω
20  
120  
none  
3000  
50  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
11  
15  
520  
50  
120  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,17  
K/W  
Dynamic  
25  
15  
13  
15  
td(on)  
125  
150  
25  
Turn-on delay time  
6
tr  
Rise time  
125  
150  
25  
7
8
82  
Rgon = 4 Ω  
Rgoff = 4 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
97  
101  
3
6
8
0,429  
0,668  
0,690  
0,152  
0 / 15  
400  
50  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 0,9 μC  
= 1,8 μC  
= 2,3 μC  
Eon  
Turn-on energy (per pulse)  
mWs  
Eoff  
Turn-off energy (per pulse)  
125  
150  
0,383  
0,471  
Copyright Vincotech  
7
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
PFC Diode  
Static  
25  
2,17  
1,87  
1,80  
2,8  
10  
VF  
IR  
125  
150  
Forward voltage  
50  
V
Reverse leakage current  
650  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,14  
K/W  
Dynamic  
25  
63  
83  
92  
IRRM  
125  
150  
25  
Peak recovery current  
A
17  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
47  
54  
ns  
di/dt = 6122 A/μs  
di/dt = 5344 A/μs  
di/dt = 4864 A/μs  
0,941  
1,793  
2,268  
0,212  
0,370  
0,547  
14126  
8573  
6729  
0 / 15  
400  
50  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
PFC Sw. Protection Diode  
Static  
25  
1,67  
1,56  
2
VF  
IR  
Forward voltage  
Reverse leakage current  
Thermal  
10  
V
125  
650  
25  
0,14  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
2,87  
33  
K/W  
Capacitor (PFC)  
Capacitance  
C
nF  
%
Tolerance  
-5  
+5  
Copyright Vincotech  
8
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
PFC Shunt  
R
Resistance  
2
1
mΩ  
%
Tolerance*  
Temperature coefficient  
tc  
20 - 60  
75  
ppm/K  
* Nominal tolerance of the component as shown in manufacturer’s datasheet. Not tested in production  
Shunt  
R
Resistance  
2
1
mΩ  
%
Tolerance*  
Temperature coefficient  
tc  
20 - 60  
75  
ppm/K  
* Nominal tolerance of the component as shown in manufacturer’s datasheet. Not tested in production  
Thermistor  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
25  
-5  
5
5
mW  
mW/K  
K
25  
1,5  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
25  
3962  
4000  
B(25/100)  
B-value  
25  
K
Vincotech NTC Reference  
I
Copyright Vincotech  
9
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Rectifier Diode Characteristics  
figure 1.  
Rectifier Diode  
figure 2.  
Rectifier Diode  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
180  
150  
120  
90  
60  
30  
0
Z
10-1  
0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
0,5  
1
1,5  
2
VF (V)  
tp  
=
250  
μs  
25 °C  
D =  
tp / T  
0,65  
Tj:  
125 °C  
R th(j-s)  
=
K/W  
Diode thermal model values  
R (K/W)  
τ (s)  
2,68E-02  
7,07E-02  
1,46E-01  
3,15E-01  
5,35E-02  
3,41E-02  
6,32E+00  
1,29E+00  
2,31E-01  
6,56E-02  
9,74E-03  
1,27E-03  
Copyright Vincotech  
10  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
150  
150  
VGE  
:
7
V
V
V
I
I
8
9
120  
10  
11  
12  
13  
14  
15  
16  
17  
V
V
V
V
V
V
V
V
120  
90  
60  
30  
90  
60  
30  
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)  
VC E (V)  
tp  
=
250  
15  
μs  
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
250  
150  
7 V to 17 V in steps of 1 V  
μs  
VGE  
=
V
Tj:  
=
°C  
VGE from  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
50  
I
40  
Z
100  
30  
20  
10  
0,5  
10-1  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
10-5  
0
0
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
2
4
6
8
10  
VG E (V)  
tp  
=
100  
10  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
V
Tj:  
=
1,18  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
1,28E-01  
3,00E-01  
5,67E-01  
1,34E-01  
4,70E-02  
9,19E-01  
1,49E-01  
4,76E-02  
6,63E-03  
5,83E-04  
Copyright Vincotech  
11  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G  
)
I C = f(VCE)  
16  
1000  
120 V  
V
I
14  
1ms  
100µs  
10µs  
10ms  
100ms  
DC  
100  
10  
1
480 V  
12  
10  
8
6
4
0,1  
2
0
0
0,01  
50  
100  
150  
200  
250  
QG (nC)  
1
10  
100  
1000  
VC E (V)  
D =  
single pulse  
80  
I C  
=
50  
A
Ts  
=
ºC  
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
12  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Inverter Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
90  
75  
60  
45  
30  
15  
0
Z
100  
0,5  
10-1  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
0,5  
1
1,5  
2
2,5  
3
VF (V)  
tp  
=
250  
μs  
25 °C  
150 °C  
D =  
tp / T  
Tj:  
R th(j-s)  
=
1,63  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
7,13E-02  
1,55E-01  
7,25E-01  
3,93E-01  
1,57E-01  
1,32E-01  
2,56E+00  
2,86E-01  
5,21E-02  
1,46E-02  
2,62E-03  
3,83E-04  
Copyright Vincotech  
13  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
PFC Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
150  
150  
VGE  
:
7
V
V
V
I
I
8
9
120  
10  
11  
12  
13  
14  
15  
16  
17  
V
V
V
V
V
V
V
V
120  
90  
60  
30  
90  
60  
30  
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)  
VC E (V)  
tp  
=
250  
15  
μs  
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
250  
150  
7 V to 17 V in steps of 1 V  
μs  
VGE  
=
V
Tj:  
=
°C  
VGE from  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
50  
I
40  
Z
100  
30  
20  
10  
0,5  
10-1  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
10-5  
0
0
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
2
4
6
8
VG E (V)  
tp  
=
100  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
3634  
V
Tj:  
=
1,17  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
9,21E-02  
2,50E-01  
4,87E-01  
2,29E-01  
4,67E-02  
6,92E-02  
1,46E+00  
2,13E-01  
5,11E-02  
1,02E-02  
1,93E-03  
3,04E-04  
Copyright Vincotech  
14  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
PFC Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Gate voltage vs gate charge  
Safe operating area  
VGE = f(Q G  
)
I C = f(VCE)  
16  
1000  
130 V  
V
I
14  
100  
520 V  
12  
10  
8
10  
1
6
4
0,1  
2
0
0
0,01  
1
20  
40  
60  
80  
100  
120  
QG (nC)  
10  
100  
1000  
VC E (V)  
D =  
single pulse  
80 ºC  
I C  
=
50  
A
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
15  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
PFC Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
150  
120  
90  
60  
30  
0
Z
100  
0,5  
10-1  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
1
2
3
4
VF (V)  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
tp / T  
1,14  
Tj:  
R th(j-s)  
=
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,89E-02  
1,50E-01  
4,68E-01  
2,69E-01  
1,24E-01  
7,64E-02  
4,95E+00  
5,95E-01  
1,06E-01  
3,10E-02  
5,12E-03  
7,25E-04  
Copyright Vincotech  
16  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
PFC Sw. Protection Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
30  
25  
20  
15  
10  
5
Z
100  
0,5  
10-1  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10-2  
0
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
tp (s)  
0
0,5  
1
1,5  
2
2,5  
VF (V)  
tp  
=
250  
μs  
25 °C  
D =  
tp / T  
2,87  
Tj:  
125 °C  
R th(j-s)  
=
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
2,86E-01  
5,75E-01  
1,57E+00  
3,05E-01  
1,34E-01  
2,80E+00  
4,47E-01  
1,18E-01  
1,46E-02  
1,45E-03  
Thermistor Characteristics  
figure 1.  
Thermistor  
Typical Thermistor resistance values  
Typical NTC characteristic as a function of temperature  
as a function of temperature  
R = f(T)  
NTC-typical temperature characteristic  
25000  
20000  
15000  
10000  
5000  
0
25  
50  
75  
100  
125  
T (°C)  
Copyright Vincotech  
17  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Inverter Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
8
4
Eon  
Eon  
Eon  
E
E
Eon  
6
3
Eon  
Eon  
4
2
0
2
1
0
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
20  
40  
60  
80  
100  
IC (A)  
0
10  
20  
30  
25 °C  
40  
Rg (Ω)  
With an inductive load at  
25 °C  
With an inductive load at  
VCE  
VGE  
=
=
=
=
350  
±15  
8
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
50  
V
V
A
Tj:  
125 °C  
125 °C  
125 °C  
125 °C  
R gon  
R goff  
8
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
1,2  
1,2  
E
E
Erec  
Erec  
0,9  
0,9  
Erec  
0,6  
0,3  
0
0,6  
0,3  
0
Erec  
Erec  
Erec  
0
10  
20  
30  
40  
0
20  
40  
60  
80  
100  
IC (A)  
Rg (Ω)  
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
350  
±15  
8
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
50  
V
V
A
Tj:  
125 °C  
125 °C  
125 °C  
125 °C  
R gon  
Copyright Vincotech  
18  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
1
1
t
t
td(off)  
td(on)  
tr  
td(off)  
0,1  
0,1  
td(on)  
tf  
tf  
tr  
0,01  
0,01  
0,001  
0,001  
0
10  
20  
30  
40  
0
20  
40  
60  
80  
100  
IC (A)  
Rg (Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
150  
350  
±15  
8
°C  
V
Tj =  
150  
350  
±15  
50  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
8
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
trr = f(R gon)  
0,5  
0,5  
trr  
trr  
trr  
trr  
trr  
t
t
0,4  
0,4  
0,3  
0,2  
0,1  
0
0,3  
0,2  
0,1  
trr  
0
0
0
20  
40  
60  
80  
100  
10  
20  
30  
25 °C  
40  
Rgon (Ω)  
IC (A)  
With an inductive load at  
25 °C  
With an inductive load at  
VCE  
=
=
=
350  
±15  
8
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
50  
V
V
A
Tj:  
125 °C  
125 °C  
125 °C  
125 °C  
VGE  
R gon  
Copyright Vincotech  
19  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Inverter Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
5
5
Q
Q
Qr  
Qr  
4
4
Qr  
Qr  
3
2
1
0
3
2
1
Qr  
Qr  
0
0
0
20  
40  
60  
80  
100  
10  
20  
30  
25 °C  
40  
Rgon (Ω)  
IC (A)  
With an inductive load at  
25 °C  
With an inductive load at  
VCE  
=
=
=
350  
±15  
8
V
V
Ω
Tj:  
VCE=  
VGE =  
I C=  
350  
±15  
50  
V
V
A
Tj:  
125 °C  
125 °C  
125 °C  
125 °C  
VGE  
R gon  
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
20  
40  
I
I
IRM  
IRM  
15  
30  
IRM  
20  
10  
10  
5
IRM  
IRM  
IRM  
0
0
0
0
10  
20  
30  
25 °C  
40  
Rgo n (Ω)  
20  
40  
60  
80  
100  
IC (A)  
With an inductive load at  
25 °C  
With an inductive load at  
VCE  
=
=
=
350  
±15  
8
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
350  
±15  
50  
V
V
A
Tj:  
125 °C  
125 °C  
125 °C  
125 °C  
VGE  
R gon  
Copyright Vincotech  
20  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Inverter Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
4000  
2000  
diF/dt  
dir r/dt  
diF/dt  
dir r/dt  
t
t
i
i
3000  
2000  
1000  
1500  
1000  
500  
0
0
0
0
10  
20  
30  
40  
Rgon (Ω)  
20  
40  
60  
80  
100  
IC (A)  
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
=
=
=
350  
±15  
8
V
V
Ω
Tj:  
VCE =  
VGE =  
I C=  
350  
±15  
50  
V
Tj:  
125 °C  
125 °C  
125 °C  
125 °C  
VGE  
V
A
R gon  
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
120  
I
IC MAX  
100  
I
80  
60  
40  
20  
0
I
V
0
100  
200  
300  
400  
500  
600  
700  
VC E (V)  
At  
Tj =  
125  
°C  
Ω
R gon  
R goff  
=
=
8
8
Ω
Copyright Vincotech  
21  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Inverter Switching Definitions  
General conditions  
T j  
=
=
=
125 °C  
Rgon  
Rgoff  
8 Ω  
8 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
%
%
VGE 90%  
VCE 90%  
IC  
IC  
VGE  
VGE  
VCE  
tdon  
tEoff  
IC 1%  
VCE 3%  
VCE  
IC 10%  
VGE 10%  
tEon  
t (µs)  
t (µs)  
VGE (0%) =  
-15  
15  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
350  
50  
V
350  
50  
V
A
A
tdoff  
=
134  
ns  
tdon  
=
70  
ns  
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
fitted  
%
%
IC  
IC  
IC 90%  
IC 60%  
IC 40%  
VCE  
IC 90%  
tr  
IC10%  
VCE  
IC 10%  
tf  
t (µs)  
t (µs)  
VC (100%) =  
I C (100%) =  
tf =  
350  
50  
V
VC (100%) =  
I C (100%) =  
350  
50  
V
A
A
34  
ns  
tr  
=
43  
ns  
Copyright Vincotech  
22  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Inverter Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
%
%
Qr  
trr  
tQr  
IF  
IF  
fitted  
IRRM 10%  
VF  
IRRM 90%  
IRRM 100%  
t (µs)  
t (µs)  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
350  
50  
V
I F (100%) =  
Q r (100%) =  
50  
A
A
3,09  
μC  
16  
A
trr  
=
332  
ns  
Copyright Vincotech  
23  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
PFC Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
1,2  
2
Eon  
Eon  
Eon  
Eon  
E
E
0,9  
1,5  
Eoff  
Eon  
Eoff  
Eon  
0,6  
0,3  
0
1
0,5  
0
Eoff  
Eoff  
Eoff  
Eoff  
0
30  
60  
90  
25 °C  
120  
IC (A)  
0
8
16  
24  
32  
40  
Rg (Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
=
400  
0 / 15  
4
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
400  
0 / 15  
50  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
4
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
0,7  
1
0,6  
E
Erec  
E
0,8  
0,5  
0,4  
0,3  
0,2  
0,1  
0
Erec  
Erec  
0,6  
0,4  
0,2  
0
Erec  
Erec  
Erec  
0
8
16  
24  
32  
40  
0
30  
60  
90  
25 °C  
120  
IC (A)  
Rg (Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
400  
0 / 15  
4
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
400  
0 / 15  
50  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
24  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
PFC Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
1
1
t
t
td(off)  
0,1  
0,1  
td(off)  
td(on)  
tr  
td(on)  
tr  
0,01  
0,01  
tf  
tf  
0,001  
0,001  
0
8
16  
24  
32  
40  
0
30  
60  
90  
120  
Rg (Ω)  
IC (A)  
With an inductive load at  
With an inductive load at  
Tj =  
150  
400  
0 / 15  
4
°C  
V
Tj =  
150  
400  
°C  
V
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
0 / 15  
50  
V
Ω
Ω
A
4
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
trr = f(R gon)  
0,08  
0,12  
trr  
trr  
trr  
trr  
t
t
0,06  
0,09  
0,04  
0,02  
0
0,06  
0,03  
trr  
trr  
0
0
0
30  
60  
90  
25 °C  
120  
8
16  
24  
32  
40  
Rgon (Ω)  
IC (A)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
=
=
=
400  
0 / 15  
4
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
400  
0 / 15  
50  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
VGE  
R gon  
Copyright Vincotech  
25  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
PFC Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
4
2,5  
Q
Q
Qr  
Qr  
Qr  
Qr  
2
3
1,5  
1
2
1
0
Qr  
Qr  
0,5  
0
0
0
30  
60  
90  
25 °C  
120  
8
16  
24  
32  
40  
Rgon (Ω)  
IC (A)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
=
=
=
400  
0 / 15  
4
V
V
Ω
Tj:  
VCE=  
VGE =  
I C=  
400  
0 / 15  
50  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
VGE  
R gon  
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
120  
120  
IRM  
I
I
IRM  
90  
90  
IRM  
60  
30  
60  
30  
IRM  
IRM  
IRM  
0
0
0
0
8
16  
24  
32  
40  
Rgo n (Ω)  
30  
60  
90  
25 °C  
120  
IC (A)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
=
=
=
400  
0 / 15  
4
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
400  
0 / 15  
50  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
VGE  
R gon  
Copyright Vincotech  
26  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
PFC Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
25000  
16000  
diF/dt  
dir r/dt  
diF/dt  
dir r/dt  
t
t
i
i
20000  
12000  
8000  
4000  
15000  
10000  
5000  
0
0
0
0
8
16  
24  
32  
40  
Rgon (Ω)  
30  
60  
90  
25 °C  
120  
IC (A)  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
=
=
=
400  
0 / 15  
4
V
V
Ω
Tj:  
VCE =  
VGE =  
I C=  
400  
0 / 15  
50  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
VGE  
R gon  
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
120  
I
IC MAX  
100  
I
80  
60  
40  
20  
0
I
V
0
100  
200  
300  
400  
500  
600  
700  
VC E (V)  
At  
Tj =  
125  
°C  
Ω
R gon  
R goff  
=
=
4
4
Ω
Copyright Vincotech  
27  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
PFC Switching Definitions  
General conditions  
T j  
=
=
=
125 °C  
Rgon  
Rgoff  
4 Ω  
4 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
%
%
VGE 90%  
VCE 90%  
IC  
IC  
VGE  
VGE  
VCE  
tdon  
tEoff  
IC 1%  
VCE 3%  
VCE  
IC 10%  
VGE 10%  
tEon  
t (µs)  
t (µs)  
VGE (0%) =  
0
V
VGE (0%) =  
0
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
400  
50  
97  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
V
400  
50  
V
A
A
tdoff  
=
ns  
tdon  
=
13  
ns  
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
fitted  
%
%
IC  
IC  
IC 90%  
IC 60%  
IC 40%  
VCE  
IC 90%  
tr  
IC10%  
VCE  
IC 10%  
tf  
t (µs)  
t (µs)  
VC (100%) =  
I C (100%) =  
tf =  
400  
50  
6
V
VC (100%) =  
I C (100%) =  
400  
50  
7
V
A
A
ns  
tr  
=
ns  
Copyright Vincotech  
28  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
PFC Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
%
%
Qr  
trr  
tQr  
IF  
IF  
fitted  
IRRM 10%  
VF  
IRRM 90%  
IRRM 100%  
t (µs)  
t (µs)  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
400  
50  
V
I F (100%) =  
Q r (100%) =  
50  
A
A
1,79  
μC  
83  
A
trr  
=
47  
ns  
Copyright Vincotech  
29  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 12mm housing with Press-fit pins  
with thermal paste 12mm housing with Press-fit pins  
Ordering Code  
10-PG06PPA050SJ-LJ04B08T  
10-PG06PPA050SJ-LJ04B08T-/3/  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table  
Pin  
X
Y
7,4  
4,4  
0
Function  
S2sh1  
50,5  
49,5  
45,5  
42,8  
38,5  
38,5  
38,5  
31,8  
31,8  
25,1  
1
2
S1sh1  
DC-Rect  
DC-Rect  
PFC-  
3
4
0
5
0
6
3
S1sh2  
S2sh2  
PFC+  
7
6
8
1,2  
3,9  
1,9  
9
PFC+  
10  
S1sh3  
11  
12  
13  
23,1  
22,1  
19,1  
4,9  
0
0
S2sh3  
PFC-  
Therm1  
14  
15  
16  
17  
18  
19  
20  
21  
22  
19,1  
15  
12  
9
3
Therm2  
G11  
0
0
DC-1  
G13  
0
0
6
DC-2  
G15  
3
0
0
0
DC-3  
DC+Inv  
DC+Inv  
0
15,15  
17,85  
0
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
0
25,5  
28,5  
25,5  
28,5  
25,5  
28,5  
16,3  
19,3  
28,5  
28,5  
19,3  
19,3  
28,5  
28,5  
28,5  
28,5  
17,2  
14,45  
G16  
Ph3  
0
7,7  
G14  
7,7  
Ph2  
15,4  
15,4  
21,7  
21,7  
23,4  
31,1  
32,9  
35,9  
39,1  
41,8  
49,8  
52,5  
44,3  
44,3  
G12  
Ph1  
G27  
S27  
PFC2  
PFC1  
G25  
S25  
DC+Rect  
DC+Rect  
ACIn1  
ACIn1  
ACIn2  
ACIn2  
Copyright Vincotech  
30  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
D31, D32, D33, D34  
FWD  
1600 V  
60 A  
Rectifier Diode  
T11, T12, T13, T14,  
T15, T16  
IGBT  
FWD  
600 V  
600 V  
50 A  
Inverter Switch  
D11, D12, D13, D14,  
D15, D16  
30 A  
Inverter Diode  
T25, T27  
D25, D27  
D45, D47  
C25, C27  
SH1  
IGBT  
FWD  
650 V  
650 V  
650 V  
630 V  
50 A  
50 A  
10 A  
PFC Switch  
PFC Diode  
FWD  
PFC Sw. Protection Diode  
Capacitor (PFC)  
PFC Shunt  
Capacitor  
Shunt  
32 A  
32 A  
SH2, SH3  
Rt  
Shunt  
Shunt  
Thermistor  
Thermistor  
Copyright Vincotech  
31  
16 May. 2019 / Revision 2  
10-PG06PPA050SJ-LJ04B08T  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
Correct Ic, Ptot and Rth(j-s) for Inverter Switch  
Correction of Ic/If values  
1, 5, 11  
1, 2, 3  
10-PG06PPA050SJ-LJ04B08T-D2-14  
16 May. 2019  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
32  
16 May. 2019 / Revision 2  

相关型号：

10-PG06PPA050SJ01-LH54E08T

 5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH

10-PG06PPA050SJ02-LH94E08T

 5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH

10-PG07N3A030S5-M894F96T

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH

10-PG07N3A050S5-M896F96T

 High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH

10-PG07ORA160RF-LJ53I88T

 Low diode recovery losses;Low reverse recovery time and recovery charge;Designed for high switching frequency
VINCOTECH

10-PG123BA080SH01-LN68L38T

 Easy paralleling;High speed switching;Low switching losses
VINCOTECH

10-PG123BA080SH11-LN68L33T

 Easy paralleling;High speed switching;Low switching losses
VINCOTECH

10-PG123BA080SH21-LN68L18T

 Easy paralleling;High speed switching;Low switching losses
VINCOTECH

10-PG126PA010MR-L820F88T

 Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH

10-PG12APA015SH01-PB18E08T

 Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
VINCOTECH

10-PG12NAB008ME-LC59F66T

 High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH

10-PG12NAB008MR02-LC59F36T

 Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
©2020 ICPDF网 联系我们和版权申明