10-FZ07BBA075S5-L684L58 [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-FZ07BBA075S5-L684L58 |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总31页 (文件大小：1723K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ07BBA075S5-L684L58
datasheet
650 V / 75 A
flow BUCK-BOOST 0
Features
flow 0 12 mm housing
● Battery Buck Boost
● NPC-like topology
● IGBT S5 + Rapid1S Diode
● Thermistor
Schematic
Target applications
● UPS
Types
● 10-FZ07BBA075S5-L684L58
Maximum Ratings
Tjꢀ= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
42
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
120
65
A
ꢀ
Tj = Tjmax
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
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22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Maximum Ratings
Tjꢀ= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
33
V
A
ꢀ
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
60
A
ꢀ
Tj = Tjmax
50
W
°C
Tjmax
Maximum Junction Temperature
175
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
58
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
225
86
A
ꢀ
Tj = Tjmax
W
V
±20
175
Maximum junction temperature
°C
Boost Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
55
V
A
ꢀ
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj limited by Tjmax
150
71
A
ꢀ
Tj = Tjmax
W
°C
Tjmax
Maximum Junction Temperature
175
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datasheet
Maximum Ratings
Tjꢀ= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
9,55
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0004 25
25
3,2
4
4,8
V
V
1,34
1,41
1,46
1,75
VCEsat
Collector-emitter saturation voltage
15
40
125
150
ICES
IGES
Cies
Coes
Cres
Qg
Collector-emitter cut-off current
Gate-emitter leakage current
Input capacitance
0
650
0
25
25
50
µA
nA
20
100
2500
71
Output capacitance
fꢀꢀ= 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
9
15
520
40
95
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j‐s)
Thermal resistance junction to sink
1,46
K/W
Dynamic
25
37
38
39
td(on)
125
150
25
Turn-on delay time
7
tr
Rise time
125
150
25
8
8
63
Rgoff = 8 Ω
Rgon = 8 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
77
81
12
20
±15
350
40
tf
21
0,385
0,539
0,580
0,272
0,403
0,532
Qr
Qr
Qr
= 1,5 μC
= 2,4 μC
= 2,6 μC
FWD
FWD
FWD
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
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Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Buck Diode
Static
25
1,52
1,46
1,44
1,92
1,6
125
30
VF
Ir
Forward voltage
V
150
Reverse leakage current
650
25
µA
Thermal
phase-change
material
Rth(j‐s)
Thermal resistance junction to sink
1,92
K/W
λ = 3,4 W/mK
Dynamic
25
72
86
92
IRRM
125
150
25
Peak recovery current
A
29
trr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
35
37
ns
di/dt = 9311 A/μs
di/dt = 6512 A/μs ±15
di/dt = 6556 A/μs
1,540
2,359
2,630
0,228
0,427
0,486
6119
5624
5662
Qr
350
40
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
ꢀ
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Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00075 25
25
3,2
4
4,8
V
V
1,56
1,56
1,59
1,75
VCEsat
Collector-emitter saturation voltage
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
4500
130
17
Cies
Coes
Cres
Qg
Output capacitance
fꢀꢀ= 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
75
164
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j‐s)
Thermal resistance junction to sink
1,10
K/W
Dynamic
25
24
24
24
td(on)
Turn-on delay time
125
150
25
11
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
12
12
127
145
150
22
Rgoff = 4 Ω
Rgon = 4 Ω
ns
td(off)
Turn-off delay time
Fall time
15/0
350
75
tf
30
36
0,379
0,605
0,681
0,854
1,240
1,360
Qr
Qr
Qr
= 2,5 μC
= 4,7 μC
= 5,4 μC
FWD
FWD
FWD
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Boost Diode
Static
25
1,53
1,49
1,47
1,92
3,8
VF
Ir
125
150
Forward voltage
75
V
Reverse leakage current
650
25
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j‐s)
Thermal resistance junction to sink
1,34
K/W
Dynamic
25
92
IRRM
125
150
25
116
123
53
Peak recovery current
A
trr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
84
94
ns
di/dt = 8536 A/μs
di/dt = 6881 A/μs
di/dt = 6458 A/μs
2,488
4,663
5,377
0,672
1,267
1,457
2911
2634
2713
Qr
15/0
350
75
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
ꢀ
Thermistor
R
Rated resistance
25
100
25
25
25
25
22
kΩ
%
ΔR/R
ꢀ
Deviation of R100ꢀ
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
P
5
mW
mW/K
K
1,5
B(25/50)
ꢀ
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
ꢀ
B-value
K
Vincotech NTC Reference
I
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datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
= f(
)
VCE
= f(
)
VCE
IC
IC
VGEꢀ
:
I
I
=
250
15
μs
25 °C
125 °C
150 °C
=
=
250
150
7 V to 17 V in steps of 1 V
μs
tp
tp
=
V
:
Tj
°C
VGE
Tj
from
VGE
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
= f(
)
VGE
= f( )
Z th(j‐s) tp
IC
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
=
100
10
μs
25 °C
125 °C
150 °C
=
D
tp
tpꢀ/ꢀT
=
V
:
Tj
=
R th(j‐s)
1,46
K/W
VCE
IGBT thermal model values
(K/W)
R
τ
(s)
8,80E-02
2,70E-01
6,06E-01
2,71E-01
6,68E-02
1,56E-01
8,62E+00
5,13E-01
6,64E-02
1,75E-02
8,58E-03
8,90E-04
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datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
= f(
)
= f(
)
VCE
VGE
QG
IC
I
V
=
single pulse
80
D
=
IC
40
A
=
ºC
Ts
=
±15
V
VGE
=
Tjꢀ
Tjmax
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datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
)
= f( )
tp
IF
VF
Z th(j‐s)
101
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
=
250
μs
25 °C
125 °C
150 °C
/
tp
tp
T
:
1,92
K/W
T j
R th(j‐s)
FWD thermal model values
(K/W)
R
τ
(s)
9,41E-02
3,44E-01
8,56E-01
3,61E-01
1,37E-01
1,27E-01
2,25E+00
2,12E-01
5,84E-02
9,83E-03
2,89E-03
4,79E-04
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datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
= f(
)
VCE
= f(
)
VCE
IC
IC
VGEꢀ
:
I
I
=
250
15
μs
25 °C
125 °C
150 °C
=
=
250
150
μs
°C
tp
tp
=
V
:
Tj
VGE
Tj
from
7 V to 17 V in steps of 1 V
VGE
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
= f(
)
VGE
= f( )
Z th(j‐s) tp
IC
101
I
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
=
100
10
μs
25 °C
125 °C
150 °C
=
D
tp
tpꢀ/ꢀT
=
V
:
Tj
=
R th(j‐s)
1,10
K/W
VCE
IGBT thermal model values
(K/W)
R
τ
(s)
2,16E-01
6,30E-01
1,62E-01
3,68E-02
6,02E-02
4,05E-01
6,87E-02
1,13E-02
2,51E-03
3,09E-04
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datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
= f(
)
= f(
)
VCE
VGE
Q G
IC
I
V
=
single pulse
80
D
=
IC
75
A
=
ºC
Ts
=
±15
V
VGE
=
ºC
Tjꢀ
Tjmax
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datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
)
= f( )
tp
IF
VF
Z th(j‐s)
101
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
=
250
μs
25 °C
125 °C
150 °C
/
tp
tp
T
:
Tj
1,34
K/W
R th(j‐s)
FWD thermal model values
(K/W)
R
τ
(s)
5,84E-02
1,57E-01
5,86E-01
3,27E-01
1,27E-01
8,12E-02
3,64E+00
5,25E-01
1,06E-01
2,57E-02
4,84E-03
4,11E-04
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datasheet
NTC Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic
as a function of temperature
=
R
f(T)
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datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
Eꢀ=ꢀf(R g
)
Eꢀ=ꢀf(IC
)
ꢀ
ꢀ
ꢀ
ꢀ
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
ꢀ
:
ꢀ
VCE
=
=
=
350
±15
8
V
V
Ω
Ω
T
j
VCE
=
350
±15
40
V
V
A
Tj:
VGEꢀ
VGEꢀ=
R gonꢀ
ICꢀ=
R
goffꢀ=
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erecꢀ=ꢀf(Ic)
Erecꢀ=ꢀf(R g)
ꢀ
ꢀ
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
ꢀ
:
Tj
VCE
=
=
=
350
±15
8
V
V
Ω
Tj:
VCEꢀ=
VGEꢀ=
ICꢀ=
350
±15
40
V
V
A
VGEꢀ
R gonꢀ
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datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
tꢀ=ꢀf(IC
)
tꢀ=ꢀf(R g)
ꢀ
ꢀ
With an inductive load at
With an inductive load at
Tjꢀ=ꢀ
150
350
±15
8
°C
V
Tjꢀ=ꢀ
150
350
±15
40
°C
V
ꢀ
ꢀ
VCE
=
=
=
VCE
=
=
VGEꢀ
V
VGEꢀ
V
R gonꢀ
Ω
Ω
ICꢀ=
A
R goffꢀ=
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trrꢀ=ꢀf(IC
)
trrꢀ=ꢀf(R gon)
ꢀ
ꢀ
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCE
=
350
±15
8
V
V
Ω
25 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
350
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGEꢀ=
125 °C
150 °C
VGEꢀ=
±15
40
R gonꢀ
=
ICꢀ=
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datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q rꢀ=ꢀf(IC
)
Q rꢀ=ꢀf(R gon)
Q
Q
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
350
±15
8
V
V
Ω
25 °C
125 °C
150 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCE
VGEꢀ=
IC
=
350
±15
40
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGEꢀ=
R gonꢀ
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRMꢀ=ꢀf(IC
)
IRMꢀ=ꢀf(R gon)
I
I
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
350
±15
8
V
V
Ω
25 °C
125 °C
150 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
VGEꢀ=
ICꢀ
=
350
±15
40
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGEꢀ=
R gonꢀ
=
=
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datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,ꢀdi rr/dtꢀ=ꢀf(IC
)
di F/dt,ꢀdi rr/dtꢀ=ꢀf(R gon)
d
iF/dt
d
iF/
dt
ꢀ
i
t
i
dirr/dt
dirr/
dt
350
25 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
V
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
VGEꢀ=
IC
=
350
±15
40
V
V
A
25 °C
:
Tj
:
Tj
VGEꢀ
=
±15
8
V
125 °C
150 °C
125 °C
150 °C
R gonꢀ
=
Ω
=
figure 15.
IGBT
Reverse bias safe operating area
ICꢀ=ꢀf(VCE
)
I
ICꢀMAX
I
I
V
At
Tjꢀ=
gonꢀ=
goffꢀ=
175
°C
Ω
R
R
8
8
Ω
Copyright Vincotech
18
22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Buck Switching Definitions
General conditions
=
=
=
T jꢀ
Rgonꢀ
125 °C
8 Ω
Rgoffꢀ
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VCE
VGE
tEoff
VCE
tEon
-15
VGEꢀ(0%)ꢀ=
GEꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
-15
V
VGEꢀ(0%)ꢀ=
VGEꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
tdonꢀ=
V
V
15
V
15
V
350
40
V
350
40
V
I
t
Cꢀ(100%)ꢀ=
doffꢀ=
A
A
0,077
0,215
μs
μs
0,038
0,108
μs
μs
tEoffꢀ
=
tEonꢀ
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
40
V
350
40
V
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
A
A
0,020
μs
0,008
μs
tfꢀ=
trꢀ=
Copyright Vincotech
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22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Eon
Poff
tEon
tEoff
Poffꢀ(100%)ꢀ=
14,07
0,40
0,22
kW
mJ
μs
Ponꢀ(100%)ꢀ=
Eonꢀ(100%)ꢀ=
14,07
0,54
0,11
kW
E
offꢀ(100%)ꢀ=
mJ
tEoffꢀ
=
tEonꢀ
=
μs
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VFꢀ(100%)ꢀ=
Fꢀ(100%)ꢀ=
IRRMꢀ(100%)ꢀ=
rrꢀ=
350
40
V
I
A
-86
A
t
0,034
μs
Copyright Vincotech
20
22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Buck Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Qr
IF
Erec
Prec
tErec
IFꢀ(100%)ꢀ=
40
A
Precꢀ(100%)ꢀ=
Erecꢀ(100%)ꢀ=
tErecꢀ=
14,07
0,43
0,07
kW
mJ
μs
Q
rꢀ(100%)ꢀ=
2,36
0,07
μC
μs
tQrꢀ=
Copyright Vincotech
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22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
Eꢀ=ꢀf(R g
)
Eꢀ=ꢀf(IC
)
ꢀ
ꢀ
ꢀ
ꢀ
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
ꢀ
:
ꢀ
VCE
=
=
=
350
15/0
4
V
V
Ω
Ω
T
j
VCE
=
350
15/0
75
V
V
A
Tj:
VGEꢀ
VGEꢀ=
R gonꢀ
ICꢀ=
R
goffꢀ=
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erecꢀ=ꢀf(Ic)
Erecꢀ=ꢀf(R g)
ꢀ
ꢀ
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
ꢀ
:
Tj
VCE
=
=
=
350
15/0
4
V
V
Ω
Tj:
VCEꢀ=
VGEꢀ=
ICꢀ=
350
15/0
75
V
V
A
VGEꢀ
R gonꢀ
Copyright Vincotech
22
22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
tꢀ=ꢀf(IC
)
tꢀ=ꢀf(R g)
ꢀ
ꢀ
With an inductive load at
With an inductive load at
Tjꢀ=ꢀ
150
350
15/0
4
°C
V
Tjꢀ=ꢀ
150
350
15/0
75
°C
V
ꢀ
ꢀ
VCE
=
=
=
VCE
=
=
VGEꢀ
V
VGEꢀ
V
R gonꢀ
Ω
Ω
ICꢀ=
A
R goffꢀ=
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trrꢀ=ꢀf(IC
)
trrꢀ=ꢀf(R gon)
ꢀ
ꢀ
At
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCE
=
350
15/0
4
V
V
Ω
25 °C
125 °C
150 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
350
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGEꢀ=
VGEꢀ=
15/0
75
R gonꢀ
=
ICꢀ=
Copyright Vincotech
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22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q rꢀ=ꢀf(IC
)
Q rꢀ=ꢀf(R gon)
Q
Q
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
350
15/0
4
V
V
Ω
25 °C
125 °C
150 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCE
VGEꢀ=
IC
=
350
15/0
75
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGEꢀ=
R gonꢀ
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRMꢀ=ꢀf(IC
)
IRMꢀ=ꢀf(R gon)
I
I
At
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
350
15/0
4
V
V
Ω
25 °C
125 °C
150 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
VGEꢀ=
ICꢀ
=
350
15/0
75
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGEꢀ=
=
R gonꢀ
=
Copyright Vincotech
24
22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,ꢀdi rr/dtꢀ=ꢀf(IC
)
di F/dt,ꢀdi rr/dtꢀ=ꢀf(R gon)
diF
/
dt
diF/dt
ꢀ
t
dirr/dt
dirr
/dt
i
i
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
350
V
V
Ω
25 °C
125 °C
150 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
VGEꢀ=
IC
=
350
15/0
75
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGEꢀ=
15/0
4
R gonꢀ
=
=
figure 15.
IGBT
Reverse bias safe operating area
ICꢀ=ꢀf(VCE
)
I
ICꢀMAX
I
I
V
At
Tjꢀ=
gonꢀ=
goffꢀ=
175
°C
Ω
R
R
4
4
Ω
Copyright Vincotech
25
22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Boost Switching Definitions
General conditions
=
=
=
T jꢀ
Rgonꢀ
125 °C
4 Ω
Rgoffꢀ
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
IC
tdoff
VGE
IC
VCE
tEoff
VGE
VCE
tEon
VGEꢀ(0%)ꢀ=
GEꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
0
V
VGEꢀ(0%)ꢀ=
VGEꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
tdonꢀ=
0
V
V
15
V
15
V
350
75
V
350
75
V
I
t
Cꢀ(100%)ꢀ=
doffꢀ=
A
A
0,145
0,243
μs
μs
0,024
0,092
μs
μs
tEoffꢀ
=
tEonꢀ
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
75
V
350
75
V
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
A
A
0,030
μs
0,012
μs
tfꢀ=
trꢀ=
Copyright Vincotech
26
22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Poff
Eoff
Eon
Pon
tEoff
tEon
Poffꢀ(100%)ꢀ=
Eoffꢀ(100%)ꢀ=
26,41
1,24
0,24
kW
mJ
μs
Ponꢀ(100%)ꢀ=
Eonꢀ(100%)ꢀ=
26,41
0,61
0,09
kW
mJ
μs
tEoffꢀ
=
tEonꢀ=
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VFꢀ(100%)ꢀ=
350
V
I
I
t
Fꢀ(100%)ꢀ=
RRMꢀ(100%)ꢀ=
rrꢀ=
75
A
-116
0,084
A
μs
Copyright Vincotech
27
22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
IF
Qr
Erec
tErec
Prec
IFꢀ(100%)ꢀ=
75
A
Precꢀ(100%)ꢀ=
Erecꢀ(100%)ꢀ=
tErecꢀ=
26,41
1,27
0,17
kW
mJ
μs
Q
rꢀ(100%)ꢀ=
4,66
0,17
μC
μs
tQrꢀ=
Copyright Vincotech
28
22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
Ordering Code
10-FZ07BBA075S5-L684L58
10-FZ07BBA075S5-L684L58-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
Function
G11
0
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,8
15,3
2
2,9
S11
DC+Boost
DC+Boost
N1
3
8,3
4
10,8
19,6
22,1
29,1
32
5
6
N1
7
S13
8
G13
9
33,5
33,5
Boost+
Boost+
10
11
12
13
33,5
33,5
32
7,2
4,7
0
Boost-
Boost-
G14
14
15
16
17
18
19
20
21
22
29,1
22,1
19,6
10,8
8,3
2,9
0
0
0
S14
N1
0
N1
0
DC-Boost
DC-Boost
S12
0
0
0
G12
0
8
Therm1
Therm2
0
14,5
Copyright Vincotech
29
22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Pinout
Identification
ID
Component
Voltage
650 V
Current
Function
Comment
T11, T12
IGBT
40 A
30 A
75 A
75 A
Buck Switch
Buck Diode
Boost Switch
Boost Diode
Thermistor
D11, D12
T13, T14
D13, D14
Rt
FWD
IGBT
FWD
NTC
650 V
650 V
650 V
Copyright Vincotech
30
22 Aug. 2017 / Revision 1
10-FZ07BBA075S5-L684L58
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ07BBA075S5-L684L58-D1-14
22 Aug. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
31
22 Aug. 2017 / Revision 1
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