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10-FZ07BIA030RW-P894E88 [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
10-FZ07BIA030RW-P894E88
型号： 10-FZ07BIA030RW-P894E88
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
文件： 总33页 (文件大小：3091K)
中文：  中文翻译
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10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
650 V / 30 A  
flow SOL 0 BI  
Features  
flow 0 12 mm housing  
● Booster + H-Bridge  
● Kelvin Emitter for improved switching performance  
● Temperature sensor  
Solder pins  
Press-fit pins  
Schematic  
Target applications  
● Power Supply  
● Solar Inverters  
Types  
● 10-FZ07BIA030RW-P894E88  
● 10-PZ07BIA030RW-P894E88Y  
Maximum Ratings  
T
j
= 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Boost Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
30  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
120  
63  
A
Ts = 80 °C  
W
V
±30  
175  
Maximum junction temperature  
°C  
Copyright Vincotech  
1
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Boost Diode  
VRRM  
IF  
Ptot  
Tjmax  
Peak repetitive reverse voltage  
650  
15  
V
A
Continuous (direct) forward current  
Total power dissipation  
Tj = Tjmax  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
49  
W
°C  
Maximum junction temperature  
175  
Boost Sw. Protection Diode  
VRRM  
Peak repetitive reverse voltage  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
650  
10  
V
A
IF  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
Ptot  
20  
A
Tj = Tjmax  
33  
W
°C  
Tjmax  
Maximum junction temperature  
175  
ByPass Diode  
VRRM  
IF  
IFSM  
I2t  
Ptot  
Tjmax  
Peak Repetitive Reverse Voltage  
1600  
35  
V
A
Continuous (direct) forward current  
Surge (non-repetitive) forward current  
Surge current capability  
270  
370  
56  
A
50 Hz Single Half Sine Wave  
tp = 10 ms  
Tj = 150 °C  
Ts = 80 °C  
A2s  
W
°C  
Total power dissipation  
Tj = Tjmax  
Maximum Junction Temperature  
150  
H-Bridge Switch  
VCES  
IC  
ICRM  
Ptot  
VGES  
Tjmax  
Collector-emitter voltage  
650  
30  
V
A
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
120  
63  
A
W
V
±30  
175  
Maximum junction temperature  
°C  
Copyright Vincotech  
2
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
H-Bridge Diode  
VRRM  
IF  
Ptot  
Tjmax  
Peak repetitive reverse voltage  
650  
15  
V
A
Continuous (direct) forward current  
Total power dissipation  
Tj = Tjmax  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
49  
W
°C  
Maximum junction temperature  
175  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
Creepage distance  
Clearance  
tp = 1 min  
V
min. 12,7  
8,66  
mm  
mm  
mm  
Solder pins  
Press-fit pins  
9,17  
Comparative Tracking Index  
*100 % tested in production  
CTI  
> 200  
Copyright Vincotech  
3
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Boost Switch  
Static  
VGE(th)  
VGE = VCE  
Gate-emitter threshold voltage  
0,02  
30  
25  
5
6
7
V
V
25  
1,44  
1,60  
1,63  
1,9  
VCEsat  
125  
150  
Collector-emitter saturation voltage  
15  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
10  
µA  
nA  
Ω
30  
200  
none  
2530  
65  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
46  
15  
400  
30  
84  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,50  
K/W  
Dynamic  
25  
51  
45  
43  
td(on)  
125  
150  
25  
Turn-on delay time  
18  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
19  
19  
142  
161  
164  
31  
Rgoff = 8 Ω  
Rgon = 8 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
15/0  
400  
30  
tf  
36  
46  
0,449  
0,692  
0,765  
0,406  
0,553  
0,596  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 0,8 μC  
= 1,9 μC  
= 2,3 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
4
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Boost Diode  
Static  
25  
125  
150  
1,44  
1,20  
1,14  
VF  
IR  
Forward voltage  
15  
V
Reverse leakage current  
650  
25  
5
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,95  
K/W  
Dynamic  
25  
35  
51  
54  
IRRM  
125  
150  
25  
Peak recovery current  
A
44  
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
94  
100  
ns  
di/dt = 2094 A/μs  
di/dt = 1870 A/μs  
di/dt = 1804 A/μs  
0,828  
1,921  
2,252  
0,188  
0,466  
0,546  
4484  
1951  
2277  
Recovered charge  
15/0  
400  
30  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Boost Sw. Protection Diode  
Static  
25  
125  
1,67  
1,56  
1,87  
0,14  
VF  
IR  
Forward voltage  
Reverse leakage current  
Thermal  
10  
V
650  
25  
µA  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
2,87  
K/W  
Copyright Vincotech  
5
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
ByPass Diode  
Static  
25  
0,8  
1,17  
1,13  
1,6  
Forward voltage  
Reverse leakage current  
Thermal  
VF  
Ir  
35  
V
125  
25  
50  
1600  
145  
µA  
1100  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,25  
K/W  
Copyright Vincotech  
6
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
H-Bridge Switch  
Static  
VGE(th)  
VGE = VCE  
Gate-emitter threshold voltage  
0,02  
30  
25  
5
6
7
V
V
25  
1,44  
1,60  
1,63  
1,9  
VCEsat  
125  
150  
Collector-emitter saturation voltage  
15  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
10  
µA  
nA  
Ω
30  
200  
none  
2530  
65  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
f = 1 Mhz  
0
30  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
46  
15  
400  
30  
84  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,50  
K/W  
Dynamic  
25  
129  
122  
119  
22  
td(on)  
125  
150  
25  
Turn-on delay time  
tr  
Rise time  
125  
150  
25  
22  
23  
67  
Rgoff = 8 Ω  
Rgon = 8 Ω  
ns  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
76  
79  
39  
43  
±15  
350  
30  
tf  
52  
0,431  
0,642  
0,718  
0,326  
0,446  
0,487  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 0,8 μC  
= 1,8 μC  
= 2,2 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
Copyright Vincotech  
7
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
H-Bridge Diode  
Static  
25  
1,44  
1,20  
1,14  
VF  
IR  
125  
150  
25  
Forward voltage  
15  
V
5
Reverse leakage current  
650  
µA  
150  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
1,95  
K/W  
Dynamic  
25  
29  
IRRM  
Peak recovery current  
125  
150  
25  
44  
49  
46  
A
trr  
Qr  
Reverse recovery time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
105  
114  
ns  
di/dt = 1825 A/μs  
di/dt = 1611 A/μs ±15  
di/dt = 1686 A/μs  
0,755  
1,841  
2,218  
0,146  
0,385  
0,468  
2636  
1738  
2119  
350  
30  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
22  
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 1486 Ω  
-12  
+14  
200  
2
mW  
mW/K  
K
B(25/50) Tol. ±3%  
B(25/100) Tol. ±3%  
3950  
3998  
B-value  
K
Vincotech NTC Reference  
B
Copyright Vincotech  
8
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
Tj  
=
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
1,50  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
5,92E-02  
1,11E-01  
4,91E-01  
4,45E-01  
2,28E-01  
7,55E-02  
9,11E-02  
3,33E+00  
5,14E-01  
8,64E-02  
3,10E-02  
6,69E-03  
1,48E-03  
2,40E-04  
Copyright Vincotech  
9
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(VCE  
)
I
I
I
I
D =  
single pulse  
80 ºC  
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
10  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,95  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
6,76E-02  
1,40E-01  
6,86E-01  
5,59E-01  
3,18E-01  
1,83E-01  
3,64E+00  
5,05E-01  
7,72E-02  
2,36E-02  
4,16E-03  
1,00E-03  
Copyright Vincotech  
11  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Sw. Protection Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
D =  
R th(j-s)  
tp / T  
2,87  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
6,53E-02  
1,48E-01  
1,31E+00  
7,32E-01  
4,04E-01  
2,11E-01  
3,94E+00  
4,48E-01  
5,96E-02  
1,36E-02  
2,79E-03  
5,37E-04  
Copyright Vincotech  
12  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
ByPass Diode Characteristics  
figure 1.  
Rectifier Diode  
figure 2.  
Rectifier Diode  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
D = 0,5  
0,2  
10-1  
0,1  
0,05  
0,02  
0,01  
0,005  
0,000  
10-2  
10-4  
10-3  
10-2  
10-1  
100  
101  
D =  
R th(j-s)  
tp  
=
250  
μs  
25 °C  
125 °C  
tp / T  
T j:  
=
1,10  
K/W  
Diode thermal model values  
R (K/W)  
τ
(s)  
1,03E-01  
1,17E-01  
5,19E-01  
2,38E-01  
7,64E-02  
4,71E-02  
7,70E+00  
4,31E-01  
6,42E-02  
2,35E-02  
3,81E-03  
7,57E-04  
Copyright Vincotech  
13  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
H-Bridge Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
I
I
I
I
I
I
tp  
=
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
VGE  
=
Tj:  
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10-1  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
V
25 °C  
125 °C  
150 °C  
D
=
tp  
1,50  
IGBT thermal model values  
(K/W)  
/ T  
VCE  
=
Tj:  
R th(j-s)  
=
K/W  
R
τ
(s)  
5,92E-02  
1,11E-01  
4,91E-01  
4,45E-01  
2,28E-01  
7,55E-02  
9,11E-02  
3,33E+00  
5,14E-01  
8,64E-02  
3,10E-02  
6,69E-03  
1,48E-03  
2,40E-04  
Copyright Vincotech  
14  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
H-Bridge Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(VCE  
)
I
I
I
I
D =  
single pulse  
80 ºC  
Ts  
=
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
15  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
H-Bridge Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
101  
Z
Z
Z
Z
100  
10-1  
10-2  
10-4  
=
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
1,95  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
6,76E-02  
1,40E-01  
6,86E-01  
5,59E-01  
3,18E-01  
1,83E-01  
3,64E+00  
5,05E-01  
7,72E-02  
2,36E-02  
4,16E-03  
1,00E-03  
NTC Characteristics  
Typical Thermistor resistance values  
figure 1.  
Typical NTC characteristic  
Thermistor  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
16  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
:
125 °C  
150 °C  
400  
15/0  
30  
V
V
A
VCE  
VGE  
=
=
=
=
400  
15/0  
8
V
V
Ω
Ω
T
j
VCE  
VGE  
I C  
=
=
=
Tj:  
R gon  
R goff  
8
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
400  
15/0  
8
V
V
Ω
:
400  
15/0  
30  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
R gon  
Copyright Vincotech  
17  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
400  
15/0  
8
°C  
V
150  
400  
15/0  
30  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
8
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
At  
VCE  
=
400  
15/0  
8
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
400  
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
15/0  
30  
:
Tj  
VGE  
R gon  
=
=
VGE  
I C  
=
=
Copyright Vincotech  
18  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
400  
25 °C  
V
V
Ω
400  
15/0  
30  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
15/0  
8
:
Tj  
125 °C  
150 °C  
:
Tj  
=
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
400  
25 °C  
V
V
Ω
400  
15/0  
30  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
15/0  
8
:
Tj  
125 °C  
150 °C  
:
Tj  
VGE  
=
=
VGE  
I C  
=
R gon  
=
Copyright Vincotech  
19  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
di  
rr/dt  
i
i
i
i
dir r  
/dt  
i
i
i
i
At  
VCE  
=
400  
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
400  
15/0  
30  
V
V
A
25 °C  
15/0  
8
:
Tj  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
=
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
Tj  
=
=
=
175  
°C  
Ω
R gon  
R goff  
8
8
Ω
Copyright Vincotech  
20  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Switching Definitions  
General conditions  
=
=
=
125 °C  
8 Ω  
T j  
Rgon  
R goff  
8 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VCE  
VGE  
tEoff  
VCE  
tEon  
VGE (0%) =  
0
V
VGE (0%) =  
0
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
400  
30  
V
400  
30  
V
A
A
0,161  
0,277  
μs  
μs  
0,045  
0,102  
μs  
μs  
t doff  
t Eoff  
=
=
tdon  
tEon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
tr  
VCE  
VCE  
tf  
400  
V
A
400  
30  
V
A
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
30  
0,036  
μs  
0,019  
μs  
tr  
=
Copyright Vincotech  
21  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Eoff  
Poff  
Eon  
Pon  
tEoff  
tEon  
P off (100%) =  
Eoff (100%) =  
12,07  
kW  
mJ  
μs  
P on (100%) =  
Eon (100%) =  
12,07  
0,69  
0,10  
kW  
mJ  
μs  
0,55  
0,28  
t Eoff  
=
tEon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
VF  
fitted  
VF (100%) =  
I F (100%) =  
400  
V
30  
A
-51  
0,094  
A
I RRM (100%) =  
t rr  
μs  
=
Copyright Vincotech  
22  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Boost Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)  
IF  
Qr  
Erec  
tErec  
Prec  
30  
A
12,07  
0,47  
0,19  
kW  
mJ  
μs  
I F (100%) =  
Q r (100%) =  
P rec (100%) =  
Erec (100%) =  
1,92  
0,19  
μC  
μs  
t Qr  
=
tErec =  
Copyright Vincotech  
23  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
H-Bridge Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g  
)
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
:
125 °C  
150 °C  
350  
±15  
30  
V
V
A
VCE  
VGE  
=
=
=
=
350  
±15  
8
V
V
Ω
Ω
T
j
VCE  
VGE  
I C  
=
=
=
Tj:  
R gon  
R goff  
8
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c  
)
Erec = f(R g  
)
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
350  
±15  
8
V
V
Ω
:
350  
±15  
30  
V
V
A
:
Tj  
VCE  
VGE  
=
=
=
Tj  
VCE  
VGE  
I C  
=
=
=
R gon  
Copyright Vincotech  
24  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
H-Bridge Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
350  
±15  
8
°C  
V
150  
350  
±15  
30  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
Ω
Ω
A
8
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
At  
VCE  
=
350  
±15  
8
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
=
350  
V
V
A
25 °C  
125 °C  
150 °C  
:
Tj  
±15  
30  
:
Tj  
VGE  
R gon  
=
=
VGE  
I C  
=
=
Copyright Vincotech  
25  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
H-Bridge Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
350  
25 °C  
V
V
Ω
350  
±15  
30  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
±15  
8
:
Tj  
125 °C  
150 °C  
:
Tj  
=
=
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
350  
25 °C  
V
V
Ω
350  
±15  
30  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
±15  
8
:
Tj  
125 °C  
150 °C  
:
Tj  
VGE  
=
=
VGE  
I C  
=
R gon  
=
Copyright Vincotech  
26  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
H-Bridge Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon  
)
diF/dt  
diF  
/
dt  
t
t
t
t
t
t
t
t
di  
rr/dt  
i
i
i
i
dir r  
/dt  
i
i
i
i
At  
VCE  
=
350  
±15  
8
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
350  
±15  
30  
V
V
A
25 °C  
:
Tj  
:
Tj  
125 °C  
150 °C  
VGE  
=
=
=
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
Tj  
=
=
=
175  
°C  
Ω
R gon  
R goff  
8
8
Ω
Copyright Vincotech  
27  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
H-Bridge Switching Definitions  
General conditions  
=
=
=
125 °C  
8 Ω  
T j  
Rgon  
R goff  
8 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon  
)
tdoff  
IC  
IC  
VGE  
VCE  
tEoff  
VGE  
VCE  
tEon  
-15  
-15  
VGE (0%) =  
V
VGE (0%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
350  
30  
V
350  
30  
V
A
A
0,076  
0,217  
μs  
μs  
0,122  
0,184  
μs  
μs  
t doff  
t Eoff  
=
=
tdon  
tEon  
=
=
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
350  
350  
30  
V
A
V
A
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
30  
0,043  
μs  
0,022  
μs  
tr  
=
Copyright Vincotech  
28  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
H-Bridge Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Turn-off Switching Waveforms & definition of tEoff  
Turn-on Switching Waveforms & definition of tEon  
Pon  
Eoff  
Poff  
Eon  
tEoff  
tEon  
P off (100%) =  
Eoff (100%) =  
10,47  
0,45  
0,22  
kW  
mJ  
μs  
P on (100%) =  
Eon (100%) =  
10,47  
0,64  
0,18  
kW  
mJ  
μs  
t Eoff  
=
tEon =  
figure 7.  
FWD  
Turn-off Switching Waveforms & definition of trr  
IF  
VF  
fitted  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
350  
30  
V
A
-44  
0,105  
A
μs  
t rr  
=
Copyright Vincotech  
29  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
H-Bridge Switching Characteristics  
figure 8.  
FWD  
figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)  
Erec  
Qr  
IF  
tErec  
Prec  
30  
A
10,47  
0,39  
0,21  
kW  
mJ  
μs  
I F (100%) =  
Q r (100%) =  
P rec (100%) =  
Erec (100%) =  
1,84  
0,21  
μC  
μs  
t Qr  
=
tErec =  
Copyright Vincotech  
30  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 12 mm housing with solder pins  
with thermal paste 12 mm housing with solder pins  
without thermal paste 12 mm housing with press-fit pins  
with thermal paste 12 mm housing with press-fit pins  
Ordering Code  
10-FZ07BIA030RW-P894E88  
10-FZ07BIA030RW-P894E88-/3/  
10-PZ07BIA030RW-P894E88Y  
10-PZ07BIA030RW-P894E88Y-/3/  
Name  
Date code  
WWYY  
Serial  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVV WWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table  
Pin  
1
X
Y
Function  
G4  
Solder pins  
28,7  
25,9  
23,1  
17,6  
12,1  
9,3  
2,8  
0
0
2
0
S4  
-INV  
+INV  
G3  
3
0
4
0
0
5
6
0
S3  
7
0
G5  
8
0
S5  
9
0
5,05  
10,55  
-DC  
+DC  
10  
0
11  
12  
13  
0
0
9,3  
16,15  
22,6  
22,6  
Sol  
Boost  
S1  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
12,1  
17,6  
23,1  
25,9  
28,7  
33,6  
33,6  
33,6  
33,6  
22,6  
22,6  
22,6  
22,6  
22,6  
20,05  
14,55  
8,05  
2,55  
G1  
+INV  
-INV  
S2  
Press-fit pins  
G2  
L1  
R1  
R2  
L2  
Not assembled  
Copyright Vincotech  
31  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T5  
IGBT  
650 V  
30 A  
15 A  
10 A  
35 A  
30 A  
15 A  
Boost Switch  
Boost Diode  
D8  
FWD  
FWD  
650 V  
650 V  
1600 V  
650 V  
650 V  
D5  
D7  
Boost Sw. Protection Diode  
ByPass Diode  
FWD  
T1, T2, T3, T4  
D1, D2, D3, D4  
NTC  
IGBT  
H-Bridge Switch  
H-Bridge Diode  
FWD  
Thermistor  
Thermistor  
Copyright Vincotech  
32  
19 Dec. 2017 / Revision 1  
10-FZ07BIA030RW-P894E88  
10-PZ07BIA030RW-P894E88Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 135  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 0 packages see vincotech.com website.  
Package data  
Package data for flow 0 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-xZ07BIA030RW-P894E88x-D1-14  
19 Dec. 2017  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
33  
19 Dec. 2017 / Revision 1  

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