10-FZ07LBA100SM01-L705L18 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-FZ07LBA100SM01-L705L18 |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总21页 (文件大小：7673K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ07LBA100SM01-L705L18
datasheet
flowNPFC 0
650 V / 100 A
Features
flow 0 12 mm housing
● Three-phase NPFC topology
● High efficient IGBT H5 technology
● Low inductive design
● Integrated Thermistor
Schematic
Target applications
● Power Supply
● UPS
Types
● 10-FZ07LBA100SM01-L705L18
Copyright Vincotech
1
28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Diode
VRRM
Peak repetitive reverse voltage
650
84
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
122
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Switch
VCES
Collector-emitter voltage
650
78
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
300
133
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
63
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
550
1513
122
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Capacitor (DC)
VMAX
Maximum DC voltage
500
V
Top
Operation Temperature
-55 ... 125
°C
Copyright Vincotech
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
>12,7
9,15
V
AC Voltage
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,18
1,78
1,57
1,82(1)
1,2
VF
IR
Forward voltage
Reverse leakage current
100
V
150
Vr = 650 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,78
K/W
Copyright Vincotech
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,001
100
25
3,3
4
4,7
V
25
1,63
1,78
2,22(1)
15
0
V
125
650
0
25
25
80
µA
nA
Ω
20
240
None
6000
100
22
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
520
100
240
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,72
K/W
25
73,8
71,8
70,2
19,8
22,4
22
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
162,4
176,4
179,8
6,11
9,5
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
350
80
tf
125
150
25
ns
8,91
2,75
3,6
QrFWD=4,92 µC
QrFWD=10,04 µC
QrFWD=12,44 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
3,93
0,297
0,515
0,594
Eoff
125
150
Copyright Vincotech
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,24
2,45
2,38
2,52(1)
VF
IR
Forward voltage
100
125
150
25
V
2,47(1)
120
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
8800
17700
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,78
K/W
25
78,52
106,41
116,57
119,16
219,11
243,11
4,92
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=4646 A/µs
di/dt=3416 A/µs
di/dt=3473 A/µs
Qr
Recovered charge
-5/15
350
80
125
150
25
10,04
12,44
0,89
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,19
mWs
A/µs
2,78
3514
(dirf/dt)max
125
150
3663
3540
Copyright Vincotech
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
150
2,5
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1486 Ω
100
-12
14
200
2
mW
mW/K
K
d
25
B(25/50)
Tol. ±3 %
Tol. ±3 %
3950
3998
B(25/100)
B-value
K
Vincotech Thermistor Reference
B
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,78
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
5,76E-02
8,79E-02
2,14E-01
2,31E-01
1,16E-01
3,20E-02
4,19E-02
5,42E+00
1,09E+00
1,59E-01
4,95E-02
1,05E-02
2,39E-03
4,10E-04
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Boost Switch Characteristics
figure 3.
IGBT
figure 4.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
5 V
6 V
250
200
150
100
50
250
200
150
100
50
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
18 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
250
125
μs
°C
25 °C
Tj:
VGE
=
Tj =
V
125 °C
VGE from 5 V to 18 V in steps of 1 V
figure 5.
IGBT
figure 6.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,715
25 °C
Tj:
VCE
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,52E-02
1,31E-01
3,01E-01
1,21E-01
4,30E-02
4,35E-02
1,73E+00
2,44E-01
6,32E-02
1,39E-02
3,50E-03
3,33E-04
Copyright Vincotech
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Boost Switch Characteristics
figure 7.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Boost Diode Characteristics
figure 8.
FWD
figure 9.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,779
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,81E-02
1,93E-01
3,99E-01
7,07E-02
3,88E-02
1,59E+00
2,55E-01
7,68E-02
6,98E-03
9,88E-04
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Thermistor Characteristics
figure 10.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Boost Switching Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
Ω
125 °C
150 °C
350
-5/15
80
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 13.
FWD
figure 14.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
80
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Boost Switching Characteristics
figure 15.
IGBT
figure 16.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tr
td(off)
td(on)
tr
-1
10
-1
10
tf
tf
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
-5/15
4
°C
V
150
350
-5/15
80
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 17.
FWD
figure 18.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
80
V
125 °C
150 °C
Tj:
Tj:
V
A
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Boost Switching Characteristics
figure 19.
FWD
figure 20.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
20,0
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
5,0
Qr
5,0
2,5
2,5
0,0
0,0
0,0
0
25
50
75
100
125
150
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
80
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 21.
FWD
figure 22.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
150
125
100
75
200
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
50
IRM
50
25
25
0
0
0,0
0
25
50
75
100
125
150
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
80
V
125 °C
150 °C
Tj:
Tj:
V
A
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Boost Switching Characteristics
figure 23.
FWD
figure 24.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
6000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
80
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 25.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
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28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Boost Switching Definitions
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
17
28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Boost Switching Definitions
figure 30.
FWD
figure 31.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
18
28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ07LBA100SM01-L705L18
10-FZ07LBA100SM01-L705L18-/7/
10-FZ07LBA100SM01-L705L18-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
not assembled
not assembled
not assembled
0
2
3
4
19,2
-DC
5
not assembled
0
6
10,1
2,8
0
GND
7
0
0
Therm1
Therm2
8
9
not assembled
9,9
10
11
12
13
14
15
16
17
18
19
20
21
22
0
0
S2
G2
12,7
not assembled
not assembled
not assembled
22,6
10,1
19,2
GND
+DC
not assembled
22,6
not assembled
not assembled
not assembled
14,8
33,6
33,6
Ph
Ph
8,2
Copyright Vincotech
19
28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Pinout
DC+
17
D25
C20
T27
D57
T25
GND
6,15
Ph
21,22
D55
C10
D27
S2 G2
10 11
Rt
Low current connection
DC-
4
Therm1 Therm2
7
8
Identification
Component
Voltage
Current
Function
Comment
ID
D55 , D57
T27, T25
D25, D27
C10, C20
Rt
FWD
IGBT
650 V
650 V
1200 V
500 V
100 A
100 A
100 A
Buck Diode
Boost Switch
Boost Diode
Capacitor (DC)
Thermistor
FWD
Capacitor
Thermistor
Copyright Vincotech
20
28 Sep. 2021 / Revision 2
10-FZ07LBA100SM01-L705L18
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format, module is unchanged
Update Boost Diode static measurements
10-FZ07LBA100SM01-L705L18-D2-14
28 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
21
28 Sep. 2021 / Revision 2
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