10-FZ122PB050SC02-M817F08 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;型号: | 10-FZ122PB050SC02-M817F08 |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
文件: | 总18页 (文件大小:7333K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FZ122PB050SC02-M817F08
datasheet
flowPHASE 0 + NTC
1200 V / 50 A
Features
flow 0 12 mm housing
● High efficiency IGBT
● Full current FWD
● Thermistor
Schematic
Target applications
● Industrial Drives
● Power Supply
● Solar
● UPS
● Welding & Cutting
Types
● 10-FZ122PB050SC02-M817F08
Copyright Vincotech
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Half-Bridge Switch
VCES
Collector-emitter voltage
1200
56
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
144
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Half-Bridge Diode
VRRM
Peak repetitive reverse voltage
1200
53
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
90
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9,12
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
>200
Copyright Vincotech
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0017
50
25
5,3
5,8
6,3
V
25
1,58
1,93
2,34
2,07(1)
15
0
V
150
1200
0
25
25
1
µA
nA
Ω
20
120
4
Cies
Cres
Qg
2800
100
380
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,66
K/W
Dynamic
25
96,2
100,8
17,2
td(on)
Turn-on delay time
Rise time
ns
ns
150
25
tr
150
25
23,6
Rgon = 8 Ω
Rgoff = 8 Ω
214
td(off)
Turn-off delay time
Fall time
ns
150
25
281,4
86,48
121,84
2,7
±15
600
50
tf
ns
150
25
QrFWD=4,8 µC
QrFWD=9,71 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
150
25
4,21
2,74
150
4,53
Copyright Vincotech
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Half-Bridge Diode
Static
25
1,35
1,73
1,7
2,05(1)
VF
IR
Forward voltage
50
125
150
V
1,68
Reverse leakage current
Vr = 1200 V
25
10
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,06
K/W
25
81,08
84,75
139,07
315,77
4,8
IRRM
Peak recovery current
A
150
25
trr
Reverse recovery time
Recovered charge
ns
150
25
di/dt=3866 A/µs
di/dt=2820 A/µs
Qr
±15
600
50
μC
150
25
9,71
1,79
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
150
25
3,97
4803
1209
(dirf/dt)max
150
Copyright Vincotech
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
2
4
6
8
10
0
2
4
6
8
10
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
50
10
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,66
25 °C
Tj:
VCE
150 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,54E-02
1,79E-01
3,14E-01
5,28E-02
2,90E-02
1,27E+00
1,86E-01
6,03E-02
4,65E-03
3,68E-04
Copyright Vincotech
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Half-Bridge Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
10µs
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Half-Bridge Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
50
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,061
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,19E-02
8,50E-02
4,99E-01
2,83E-01
9,28E-02
5,92E-02
4,68E+00
8,80E-01
1,21E-01
4,12E-02
6,53E-03
6,76E-04
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
9
07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Half-Bridge Switching Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
10
10
Eon
Eon
8
8
Eoff
Eon
Eoff
6
6
Eon
Eoff
4
4
Eoff
2
2
0
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
150 °C
600
±15
50
V
150 °C
V
A
Rgon
Rgoff
8
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
6
5
4
3
2
1
0
5
4
3
2
1
0
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
150 °C
600
±15
50
V
150 °C
V
A
Copyright Vincotech
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Half-Bridge Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
tf
tf
td(on)
-1
10
-1
10
tr
tr
-2
10
-2
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
150 °C
600
±15
50
V
150 °C
V
A
Copyright Vincotech
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Half-Bridge Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
17,5
15,0
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
5,0
2,5
2,5
0,0
0,0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
150 °C
600
±15
50
V
V
A
150 °C
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
125
100
75
50
25
0
175
150
125
100
75
IRM
IRM
50
IRM
IRM
25
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
150 °C
600
±15
50
V
V
A
150 °C
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Half-Bridge Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
7000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
150 °C
600
±15
50
V
V
A
150 °C
figure 23.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Half-Bridge Switching Definitions
figure 24.
IGBT
figure 25.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Half-Bridge Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ122PB050SC02-M817F08
10-FZ122PB050SC02-M817F08-/7/
10-FZ122PB050SC02-M817F08-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC-
DC-
DC-
DC-
DC+
DC+
DC+
DC+
G12
S12
Ph
0
0
0
2
2,3
3
0
4,6
4
0
6,9
5
0
15,6
17,9
20,2
22,5
16,45
16,45
11,5
9,2
6
0
7
0
8
0
9
13,85
16,75
33,5
33,5
33,5
33,5
33,5
33,5
13,85
19,55
19,55
33,5
26,1
10
11
12
13
14
15
16
17
18
19
20
21
Ph
6,9
Ph
4,6
Ph
2,3
Ph
0
Ph
13,55
4,95
7,85
22,5
22,5
Ph
S11
G11
Therm1
Therm2
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07 Sep. 2021 / Revision 2
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datasheet
Pinout
DC+ 5,6,7,8
T12
D11
9
G12
10 S12
Ph
11,12,13,14,15,16,17
T11
D12
19 G11
18 S11
Rt
DC-
1,2,3,4
Therm1
20
Therm2
21
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
Rt
IGBT
FWD
1200 V
1200 V
50 A
50 A
Half-Bridge Switch
Half-Bridge Diode
Thermistor
Thermistor
Copyright Vincotech
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07 Sep. 2021 / Revision 2
10-FZ122PB050SC02-M817F08
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Switch static characteristics updated
New datasheet format, module is unchanged
10-FZ122PB050SC02-M817F08-D2-14
7 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
07 Sep. 2021 / Revision 2
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