10-FZ124PA040F2-P629F38 [VINCOTECH]
5us short circuit withstand time;High speed switching;Minimized tail current;
| 型号： | 10-FZ124PA040F2-P629F38 |
| 厂家： | 
VINCOTECH |
| 描述： | 5us short circuit withstand time;High speed switching;Minimized tail current |
| 文件： | 总18页 (文件大小：6772K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ124PA040F2-P629F38
datasheet
fastPACK 0
1200 V / 40 A
Topology features
flow 0 12 mm housing
● Kelvin Emitter for improved switching performance
● Temperature sensor
Component features
● 5us short circuit withstand time
● High speed switching
● Minimized tail current
Housing features
● Base isolation: Al2O3
● Clip-in, reliable mechanical connection, qualified for wave
soldering
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Schematic
Target applications
● Charging Stations
● Power Supply
Types
● 10-FZ124PA040F2-P629F38
Copyright Vincotech
1
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
45
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
120
118
±20
5
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 600 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1200
24
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
100
50
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
61
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9,55
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
2
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,002
40
25
5
6
7
V
V
25
2,18
2,39
2,44
2,6(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
20
20
0
25
25
25
µA
nA
Ω
0
250
None
3200
220
80
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
VCC = 960 V
0/15
40
158
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,8
K/W
25
95,52
93,17
92,33
14,35
15,21
15,86
91,37
108,21
112,93
54,43
75,79
88,24
1,54
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
40
tf
125
150
25
ns
QrFWD=1,04 µC
QrFWD=2,11 µC
QrFWD=2,56 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
2,14
mWs
mWs
2,36
1,2
Eoff
125
150
2
2,24
Copyright Vincotech
3
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
2,43
2,55
2,44
2,74(1)
VF
IR
Forward voltage
25
125
150
25
V
2,79(1)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
1600
3300
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,56
K/W
25
46,04
48,68
50,78
65,83
167,48
187,28
1,04
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3246 A/µs
di/dt=2581 A/µs
di/dt=2610 A/µs
Qr
Recovered charge
±15
600
40
125
150
25
2,11
μC
2,56
0,225
0,626
0,781
3786,78
2453,85
2084,77
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
4
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
5
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
100
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
75
50
25
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
40
10
-1
30
20
10
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
59
μs
V
D =
tp / T
0,804
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,58E-02
1,35E-01
4,44E-01
1,10E-01
4,98E-02
1,87E+00
3,17E-01
7,98E-02
1,68E-02
1,72E-03
Copyright Vincotech
6
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
100µs
1ms
1
10ms
5,0
100ms
DC
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
150
175
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
40
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
7
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Inverter Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,556
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,65E-02
1,06E-01
4,71E-01
4,83E-01
2,34E-01
1,81E-01
3,38E-02
4,86E+00
8,11E-01
1,09E-01
3,07E-02
7,03E-03
1,25E-03
3,28E-04
Copyright Vincotech
8
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Thermistor Characteristics
figure 9.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
9
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Inverter Switching Characteristics
figure 10.
IGBT
figure 11.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
5
4
3
2
1
0
6
5
4
3
2
1
0
Eon
Eon
Eon
Eon
Eoff
Eon
Eoff
Eon
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
70
80
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
Ω
125 °C
150 °C
600
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 12.
FWD
figure 13.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
10
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Inverter Switching Characteristics
figure 14.
IGBT
figure 15.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
tf
-1
10
-1
10
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
70
80
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
16
°C
V
150
600
±15
40
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 16.
FWD
figure 17.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
11
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Inverter Switching Characteristics
figure 18.
FWD
figure 19.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 20.
FWD
figure 21.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
60
50
40
30
20
10
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
40
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
12
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Inverter Switching Characteristics
figure 22.
FWD
figure 23.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
10
20
30
40
50
60
70
80
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
16
V
V
Ω
125 °C
150 °C
600
±15
40
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 24.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
90
IC MAX
80
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
13
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Inverter Switching Definitions
figure 25.
IGBT
figure 26.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 27.
IGBT
figure 28.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
14
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Inverter Switching Definitions
figure 29.
FWD
figure 30.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
15
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ124PA040F2-P629F38
10-FZ124PA040F2-P629F38-/7/
10-FZ124PA040F2-P629F38-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,8
15,3
7,2
4,7
0
Function
G1
0
2
2,9
S1
3
8,3
DC-
DC-
DC+
DC+
S2
4
10,8
19,6
22,1
29,1
32
5
6
7
8
G2
9
33,5
33,5
33,5
33,5
32
OUT1
OUT1
OUT2
OUT2
G4
10
11
12
13
14
15
16
17
18
19
20
21
22
29,1
22,1
19,6
10,8
8,3
0
S4
0
DC+
DC+
DC-
DC-
S3
0
0
0
2,9
0
0
0
G3
0
8
Th1
Th2
0
14,5
Copyright Vincotech
16
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Pinout
DC+
5,6,15,16
T2
T4
D2
D4
G2
S2
G4
S4
8
7
13
14
OUT1
9,10
OUT2
11,12
T1
T3
D1
D3
G1
S1
G3
S3
NTC
1
2
20
19
Th1
21
Th2
22
DC-
3,4,17,18
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T2, T3, T4
D2, D1, D4, D3
NTC
IGBT
FWD
1200 V
1200 V
40 A
25 A
Inverter Switch
Inverter Diode
Thermistor
Thermistor
Copyright Vincotech
17
12 Jul. 2022 / Revision 1
10-FZ124PA040F2-P629F38
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ124PA040F2-P629F38-D1-14
12 Jul. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
12 Jul. 2022 / Revision 1
相关型号：
10-FZ126PA010M7-P867F78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-FZ126PA015M7-P868F78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-FZ126PA025M7-P869F78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-FZ126PA035M7-P860F78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-FZ127PA008SC-L156E08
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-FZ127PA015SC-L158E08
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-FZ127PA025SC-L159E08
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-FZ12B2A080MR04-P629L82
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
10-FZ12NMA080F202-M260F48
5us short circuit withstand time;High speed switching;Minimized tail current
VINCOTECH
10-FZ12NMA080F205-M260F53
5us short circuit withstand time;High speed switching;Minimized tail current
VINCOTECH
©2020 ICPDF网 联系我们和版权申明