10-FZ073BA030SM07-M575L308 [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;型号: | 10-FZ073BA030SM07-M575L308 |
厂家: | VINCOTECH |
描述: | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
文件: | 总20页 (文件大小:6660K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FZ073BA030SM07-M575L308
datasheet
flowBOOST 0 triple
650 V / 30 A
Topology features
flow 0 12 mm housing
● Kelvin Emitter for improved switching performance
● Integrated DC capacitor
● Temperature sensor
● Triple Booster
Component features
● High efficiency in hard switching and resonant topologies
● High speed switching
● Low gate charge
Housing features
● Base isolation: Al2O3
● Clip-in, reliable mechanical connection, qualified for wave
soldering
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Schematic
Target applications
● Charging Stations
● Power Supply
● Solar Inverters
● UPS
Types
● 10-FZ073BA030SM07-M575L308
Copyright Vincotech
1
13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
650
32
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
90
A
Ptot
60
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
650
24
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
I2t
tp limited by Tjmax
75
A
142
100
62
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1600
38
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
200
200
46
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
2
13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 150
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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10-FZ073BA030SM07-M575L308
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0003
30
25
3,3
4
4,7
V
V
25
1,67
1,8
2,22(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,84
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
None
2100
7,7
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
VCC = 520 V
15
30
70
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,57
K/W
25
21,12
20,48
20,16
9,28
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
10,24
10,56
134,4
151,68
156,8
4,96
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
400
30
tf
125
150
25
10,39
12,31
0,335
0,34
ns
QrFWD=0,051 µC
QrFWD=0,049 µC
QrFWD=0,05 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,347
0,148
0,262
0,292
Eoff
125
150
Copyright Vincotech
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10-FZ073BA030SM07-M575L308
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,49
1,75
1,87
1,8(1)
102
VF
IR
Forward voltage
16
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,54
K/W
25
9,5
9,2
IRM
Peak recovery current
125
150
25
A
9,07
8,4
trr
Reverse recovery time
125
150
25
8,68
ns
8,8
0,051
0,049
0,05
9,153x10-3
8,946x10-3
9,178x10-3
di/dt=3122 A/µs
di/dt=2852 A/µs
di/dt=2764 A/µs
Qr
Recovered charge
0/15
400
30
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
2953
2573
2532
(dirf/dt)max
125
150
Copyright Vincotech
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13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,06
0,994
0,973
1,5(1)
VF
IR
Forward voltage
18
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,54
K/W
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
33
nF
%
Tolerance
-5
5
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
80
80
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
60
40
20
0
60
40
20
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
30
10
25
20
15
10
5
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,572
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,66E-02
2,00E-01
6,54E-01
3,77E-01
1,51E-01
1,13E-01
1,73E+00
2,58E-01
5,93E-02
1,31E-02
2,99E-03
3,69E-04
Copyright Vincotech
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13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,543
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,00E-02
2,86E-01
7,15E-01
3,66E-01
9,56E-02
2,02E+00
2,25E-01
4,66E-02
5,33E-03
8,10E-04
Copyright Vincotech
9
13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Boost Sw. Protection Diode Characteristics
figure 8.
Rectifier
figure 9.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
0,75
1,00
1,25
1,50
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
1,537
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
7,03E-02
2,01E-01
7,63E-01
3,40E-01
1,63E-01
4,42E+00
4,56E-01
7,09E-02
1,14E-02
1,31E-03
Copyright Vincotech
10
13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Thermistor Characteristics
figure 10.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Boost Switching Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
Ω
125 °C
150 °C
400
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 13.
FWD
figure 14.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
12
13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Boost Switching Characteristics
figure 15.
IGBT
figure 16.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
tr
td(on)
tr
tf
-2
10
-2
10
tf
-3
10
-3
10
0
10
20
30
40
50
60
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
16
°C
V
150
400
0/15
30
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 17.
FWD
figure 18.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
13
13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Boost Switching Characteristics
figure 19.
FWD
figure 20.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 21.
FWD
figure 22.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
5,0
IRM
IRM
IRM
5,0
2,5
2,5
0,0
0,0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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13 Jul. 2022 / Revision 2
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datasheet
Boost Switching Characteristics
figure 23.
FWD
figure 24.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
10
20
30
40
50
60
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 25.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
70
IC MAX
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
16
16
Ω
Ω
Copyright Vincotech
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13 Jul. 2022 / Revision 2
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datasheet
Boost Switching Definitions
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
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datasheet
Boost Switching Definitions
figure 30.
FWD
figure 31.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
17
13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FZ073BA030SM07-M575L308
10-FZ073BA030SM07-M575L308-/7/
10-FZ073BA030SM07-M575L308-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
NTC1
NTC2
Boost3
Boost2
Boost1
DC+
DC+
DC-
33,3
30,7
23,85
15,95
9,6
2
0
3
0
4
0
5
0
6
2,6
0
7
0
0
8
0
22,3
22,3
22,3
22,3
22,3
22,3
22,3
22,3
22,3
9
2,6
G1
10
11
12
13
14
15
16
5,5
S1
13,1
15,9
19,4
27,7
30,7
33,3
DC-
S2
G2
S3
G3
DC-
Copyright Vincotech
18
13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Pinout
DC+
6, 7
D25
D27
D29
Boost1
Boost2
Boost3
3
4
5
C25
C27
T25
T27
T29
D45
D47
D49
G25
S25
G27
S27
G29
S29
15
14
13
9
12
10
Rt
Therm1
Therm2
2
DC-
8, 11, 16
1
Identification
Component
Voltage
Current
Function
Comment
ID
T25, T27, T29
IGBT
FWD
650 V
650 V
1600 V
630 V
30 A
16 A
18 A
Boost Switch
Boost Diode
D25, D27, D29
D45, D47, D49
C25, C27
Rectifier
Capacitor
Thermistor
Boost Sw. Protection Diode
Capacitor (DC)
Rt
Thermistor
Copyright Vincotech
19
13 Jul. 2022 / Revision 2
10-FZ073BA030SM07-M575L308
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Correct Boost Diode Maximum Ratings according to
10-FZ073BA030SM07-M575L308-D2-14
13 Jul. 2022
PCN-31-2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
20
13 Jul. 2022 / Revision 2
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