10-F112M3A025SH-M746F09 [VINCOTECH]
3 phase mixed voltage component topology;
| 型号： | 10-F112M3A025SH-M746F09 |
| 厂家： | 
VINCOTECH |
| 描述： | 3 phase mixed voltage component topology |
| 文件： | 总26页 (文件大小：1206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
flow3xMNPC 1
1200V/25A
Features
flow1 housing
● 3 phase mixed voltage component topology
● neutral point clamped inverter
● reactive power capability
12 mm
17 mm
● low inductance layout
Target Applications
Schematic
● solar inverter
● UPS
Types
● 10-FY12M3A025SH-M746F08
● 10-F112M3A025SH-M746F09
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Half Bridge IGBT (T1,T4,T5,T8,T9,T12)
Collector-emitter break down voltage
DC collector current
VCES
IC
1200
V
A
Th=80°C
23
30
Tj=Tjmax
Tc=80°C
ICpulse
tp limited by Tjmax
Pulsed collector current
75
75
A
Tj≤150°C
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
A
VCE<=VCES
Th=80°C
Tc=80°C
58
88
Ptot
Tj=Tjmax
W
V
VGE
±20
tSC
Tj≤150°C
10
µs
V
Short circuit ratings
VCC
VGE=15V
800
Tjmax
Maximum Junction Temperature
175
°C
Neutral P. FWD (D2,D3,D6,D7,D10,D11)
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
600
V
A
Th=80°C
Tc=80°C
17
23
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Tc=100°C
Surge forward current
150
A
Th=80°C
Tc=80°C
28
43
Power dissipation per Diode
Maximum Junction Temperature
W
°C
Tjmax
150
copyright Vincotech
1
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Neutral P. IGBT (T2,T3,T6,T7,T10,T11)
Collector-emitter break down voltage
DC collector current
VCES
IC
600
V
A
Th=80°C
Tc=80°C
18
24
Tj=Tjmax
ICpuls
tp limited by Tjmax
Pulsed collector current
60
60
A
Tj≤150°C
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
A
VCE<=VCES
Th=80°C
Tc=80°C
31
47
Ptot
Tj=Tjmax
W
V
VGE
±20
tSC
Tj≤150°C
6
µs
V
Short circuit ratings
VCC
VGE=15V
360
Tjmax
Maximum Junction Temperature
175
°C
Half Bridge FWD (D1,D4,D5,D8,D9,D12)
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
V
A
Th=80°C
Tc=80°C
10
13
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Surge forward current
36
A
Th=80°C
Tc=80°C
26
39
Power dissipation per Diode
Maximum Junction Temperature
W
°C
Tjmax
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
copyright Vincotech
2
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Half Bridge IGBT (T1,T4,T5,T8,T9,T12)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5,2
1,7
5,8
6,4
2,4
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0,00085
25
V
V
2,11
2,42
15
0
0,0024
120
1200
0
mA
nA
Ω
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
73
74
15
Rise time
18
ns
166
220
21
116
0,17
0,30
0,37
0,63
td(off)
tf
Turn-off delay time
Rgoff=16 Ω
Rgon=16 Ω
±15
350
15
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1430
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
99
Reverse transfer capacitance
Gate charge
85
±15
960
25
155
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,64
K/W
Neutral P. FWD (D2,D3,D6,D7,D10,D11)
Diode forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,47
1,73
2,6
10
VF
Ir
15
15
V
µA
Reverse leakage current
600
350
16
22
23
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
ns
33
0,19
0,44
1860
1998
0,03
0,05
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=16 Ω
±15
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,48
K/W
copyright Vincotech
3
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Neutral P. IGBT (T2,T3,T6,T7,T10,T11)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
1,9
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0,0012
20
V
V
1,1
1,53
1,70
15
0
0,0011
300
600
0
mA
nA
Ω
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
72
74
14
Rise time
16
ns
131
157
34
td(off)
tf
Turn-off delay time
Rgoff=16 Ω
Rgon=16 Ω
±15
350
15
Fall time
69
0,31
0,39
0,38
0,53
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1100
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
71
Reverse transfer capacitance
Gate charge
32
15
480
20
120
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
3,09
Half Bridge FWD (D1,D4,D5,D8,D9,D12)
Diode forward voltage
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,18
2,30
2,65
60
VF
Ir
8
V
µA
Reverse leakage current
1200
350
21
24
29,9
34,7
0,7
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=16 Ω
±15
15
µC
1,5
di(rec)max
/dt
1972
2214
0,14
0,38
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,65
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
∆R/R
P
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
21511
Ω
%
R100=1486 Ω
-4,5
+4,5
210
3,5
mW
mW/K
K
B(25/50)
3884
3964
B-value
B(25/100)
K
Vincotech NTC Reference
F
copyright Vincotech
4
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
Figure 1
IGBT
Figure 2
Typical output characteristics
IGBT
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
80
80
60
40
20
60
40
20
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE (V)
VCE (V)
At
At
tp =
tp =
250
25
µs
250
125
µs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
25
60
50
40
30
20
15
10
5
Tj = Tjmax-25°C
Tj = Tjmax-25°C
20
10
0
Tj = 25°C
Tj = 25°C
0
0
0
1
2
3
4
5
2
4
6
8
10
12
VGE (V)
VF (V)
At
At
tp =
tp =
250
10
µs
250
µs
VCE
=
V
copyright Vincotech
5
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
1,0
0,8
0,6
0,4
0,2
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
Eoff High T
Eoff High T
Eon High T
Eon High T
Eon Low T
Eoff Low T
Eoff Low T
Eon Low T
0
5
10
15
20
25
30
0
16
32
48
64
80
I C (A)
R
G ( Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
°C
V
25/125
25/125
VCE
VGE
=
=
VCE
VGE
IC =
=
=
350
±15
16
V
V
Ω
Ω
350
±15
15
V
Rgon
Rgoff
=
=
A
16
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
0,08
0,06
0,04
0,02
0,00
0,08
0,06
0,04
0,02
0
Erec High T
Erec High T
Erec Low T
Erec Low T
0
16
32
48
64
80
0
5
10
15
20
25
30
I
C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/125
350
°C
V
25/125
350
°C
V
=
=
=
=
±15
V
±15
V
Rgon
=
16
Ω
15
A
copyright Vincotech
6
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1,00
0,10
0,01
0,00
1,00
0,10
0,01
0,00
tdoff
tdon
tdoff
tf
tf
tr
tdon
tr
0
5
10
15
20
25
30
0
16
32
48
64
80
I C (A)
R G ( Ω)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
125
350
±15
16
°C
125
350
±15
15
°C
V
=
=
=
=
V
V
Ω
Ω
V
Rgon
Rgoff
=
=
A
16
Figure 11
FWD
Figure 12
FWD
Typical reverse recovery time as a
function of collector current
trr = f(Ic)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,04
0,03
0,02
0,01
0,00
0,1
trr High T
trr High T
0,08
0,06
0,04
0,02
trr Low T
trr Low T
0
0
0
5
10
15
20
25
30
16
32
48
64
80
I
C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
°C
V
25/125
°C
V
=
=
VR =
350
15
IF =
±15
V
A
Rgon
=
VGE =
16
Ω
±15
V
copyright Vincotech
7
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
0,6
Qrr High T
0,5
0,4
0,3
0,2
0,1
Qrr High T
Qrr Low T
Qrr Low T
0
0
0
5
10
15
20
25
30
16
32
48
64
80
I
C (A)
R
gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
°C
25/125
°C
V
=
=
VR =
V
V
Ω
350
15
IF =
±15
A
Rgon
=
VGE =
16
±15
V
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
30
25
20
15
10
5
50
40
30
20
10
IRRM High T
IRRM Low T
IRRM High T
IRRM Low T
0
0
0
0
5
10
15
20
25
30
16
32
48
64
80
R gon ( Ω)
IC(A)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
°C
25/125
350
°C
V
=
=
VR =
V
V
Ω
IF =
±15
15
A
Rgon
=
VGE =
16
±15
V
copyright Vincotech
8
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
3000
5000
dIrec/dt T
dIrec/dt T
dI0/dt T
dIo/dt T
2500
4000
2000
1500
1000
500
0
3000
2000
1000
0
0
5
10
15
20
25
30
0
16
32
48
64
80
I C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/125
350
°C
V
25/125
350
°C
V
=
=
VR =
IF =
VGE
±15
V
15
A
Rgon
=
=
16
Ω
±15
V
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,05
0,02
0,01
0,005
0.000
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
1012
10-5
10-4
10-3
10-2
10-1
100
1012
At
D =
At
tp / T
1,64
tp / T
2,48
D =
R
thJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,20
Tau (s)
7,2E-01
1,3E-01
4,6E-02
9,8E-03
1,3E-03
R (C/W)
0,08
Tau (s)
4,1E+00
5,7E-01
7,9E-02
2,0E-02
4,7E-03
9,2E-04
0,61
0,16
0,53
1,07
0,21
0,61
0,09
0,31
0,25
copyright Vincotech
9
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
125
100
75
50
25
0
40
30
20
10
0
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
T h
(
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
function of heatsink temperature
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
75
30
25
20
15
10
5
60
45
30
15
0
0
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
50
100
150
200
At
At
Tj =
Tj =
150
°C
150
°C
copyright Vincotech
10
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
Figure 25
IGBT
Figure 26
IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(Qg)
20
103
18
16
14
12
10
8
240V
102
960V
100uS
1mS
10mS
101
100
10-1
100mS
DC
6
4
2
0
0
25
50
75
100
125
150
175
Q g (nC)
100
VCE (V)
102
103
101
At
At
IC
=
D =
Th =
0
A
single pulse
80
ºC
V
VGE
Tj =
=
±15
Tjmax
ºC
copyright Vincotech
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2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Neutral Point
Neutral Point IGBT & Half Bridge FWD
Figure 1
IGBT
Figure 2
Typical output characteristics
IGBT
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
50
40
30
20
10
50
40
30
20
10
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VCE (V)
VCE (V)
At
At
tp =
tp =
250
25
µs
°C
250
126
µs
°C
Tj =
Tj =
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
IGBT
Figure 4
FWD
Typical transfer characteristics
C = f(VGE
Typical diode forward current as
a function of forward voltage
IF = f(VF)
I
)
20
15
10
5
30
25
20
15
Tj = 25°C
10
5
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
0
2
4
6
8
10
12
VGE (V)
VF (V)
0
1
2
3
4
5
At
At
tp =
VCE
tp =
250
10
µs
250
µs
=
V
copyright Vincotech
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2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Neutral Point
Neutral Point IGBT & Half Bridge FWD
Figure 5
IGBT
Figure 6
IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
1
0,8
0,6
0,4
0,2
0
1
0,8
0,6
0,4
0,2
0
Eon High T
Eon Low T
Eoff High T
Eon High T
Eon Low T
Eoff High T
Eoff Low T
Eoff Low T
0
16
32
48
64
80
0
5
10
15
20
25
30
R G ( Ω )
I
C (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
25/126
350
±15
16
°C
25/126
350
°C
V
=
=
=
=
V
V
Ω
Ω
±15
V
Rgon
Rgoff
=
=
IC =
15
A
16
Figure 7
FWD
Figure 8
FWD
Typical reverse recovery energy loss
as a function of collector current
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
Erec = f(Ic)
0,6
0,6
0,5
0,4
0,3
0,2
0,1
0
Erec High T
0,5
0,4
0,3
0,2
0,1
Erec High T
Erec Low T
Erec Low T
0
0
0
16
32
48
64
80
5
10
15
20
25
30
R G ( Ω )
I C (A)
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
25/126
350
°C
25/126
350
°C
V
=
=
=
=
V
V
Ω
±15
±15
V
Rgon
=
IC =
16
15
A
copyright Vincotech
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2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Neutral Point
Neutral Point IGBT & Half Bridge FWD
Figure 9
IGBT
Figure 10
IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdon
tdoff
0,1
0,1
tdon
tf
tr
tf
tr
0,01
0,01
0,001
0,001
0
10
20
30
40
50
60
70
0
5
10
15
20
25
30
I
C (A)
R G ( Ω )
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
126
350
±15
16
°C
126
350
±15
15
°C
V
=
=
=
=
V
V
Ω
Ω
V
Rgon
Rgoff
=
=
IC =
A
16
Figure 11
FWD
Figure 12
FWD
Typical reverse recovery time as a
function of collector current
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Ic)
trr = f(Rgon)
0,05
0,5
trr High T
0,04
0,03
0,02
0,01
0,4
0,3
0,2
0,1
trr High T
trr Low T
trr Low T
0,00
0
0,0
0
5
10
15
20
25
30
16
32
48
64
80
I C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/126
350
°C
V
25/126
°C
V
=
=
VR =
350
15
IF =
±15
V
A
Rgon
=
VGE =
16
Ω
±15
V
copyright Vincotech
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2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Neutral Point
Neutral Point IGBT & Half Bridge FWD
Figure 13
FWD
Figure 14
FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
2,5
2,0
1,5
1,0
0,5
0,0
2
Qrr High T
Qrr High T
1,5
Qrr Low T
1
Qrr Low T
0,5
0
0
16
32
48
64
80
0
5
10
15
20
25
30
I
C (A)
R
gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/126
350
°C
25/126
°C
V
=
=
VR =
V
V
Ω
350
15
IF =
±15
A
Rgon
=
VGE =
16
±15
V
Figure 15
FWD
Figure 16
FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
40
30
20
10
0
80
IRRM High T
60
40
20
IRRM Low T
IRRM High T
IRRM Low T
0
0
0
5
10
15
20
25
30
16
32
48
64
80
I C (A)
R gon ( Ω)
At
At
Tj =
VCE
VGE
Tj =
25/126
350
°C
25/126
350
°C
V
=
VR =
V
V
Ω
=
IF =
±15
15
A
Rgon
=
VGE =
16
±15
V
copyright Vincotech
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2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Neutral Point
Neutral Point IGBT & Half Bridge FWD
Figure 17
FWD
Figure 18
FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
3500
8000
dIrec/dt T
dIrec/dt T
dI0/dt T
di0/dt T
3000
6000
4000
2000
0
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
0
16
32
48
64
80
gon ( Ω)
I
C (A)
R
At
At
Tj =
VCE
VGE
Tj =
25/126
350
°C
V
25/126
350
°C
V
=
=
VR =
IF =
VGE
±15
V
15
A
Rgon
=
=
16
Ω
±15
V
Figure 19
IGBT
Figure 20
FWD
IGBT transient thermal impedance
as a function of pulse width
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
Z
thJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,05
0,02
0,01
0,02
0,01
0,005
0.000
0,005
0.000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
1012
10-5
10-4
10-3
10-2
10-1
100
1012
At
D =
RthJH
At
tp / T
3,09
D =
tp / T
3,65
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,09
Tau (s)
1,8E+00
2,7E-01
6,9E-02
1,4E-02
3,4E-03
4,1E-04
R (C/W)
0,15
Tau (s)
1,2E+00
1,7E-01
4,8E-02
9,0E-03
1,8E-03
0,37
0,58
1,74
1,42
0,36
0,77
0,25
0,72
0,24
copyright Vincotech
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2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Neutral Point
Neutral Point IGBT & Half Bridge FWD
Figure 21
IGBT
Figure 22
IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
60
45
30
15
0
30
25
20
15
10
5
0
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
T h
(
At
At
Tj =
Tj =
VGE
175
ºC
175
15
ºC
V
=
Figure 23
Power dissipation as a
function of heatsink temperature
FWD
Figure 24
Forward current as a
FWD
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
60
20
15
10
5
45
30
15
0
0
0
o C)
Th (
o C)
50
100
150
200
0
50
100
150
200
Th
(
At
At
Tj =
Tj =
175
ºC
175
ºC
copyright Vincotech
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2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
R
T
= f(T)
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
T (°C)
25
50
75
100
125
copyright Vincotech
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2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Switching Definitions Half Bridge
General conditions
Tj
=
=
=
125 °C
16 Ω
Rgon
Rgoff
16 Ω
Figure 1
Half Bridge IGBT
Figure 2
Half Bridge IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
125
250
%
tdoff
%
IC
VCE
100
200
VGE 90%
IC
150
75
50
25
0
VGE
VCE
100
VCE 90%
VGE
tEoff
tdon
50
0
IC 1%
VCE 3%
VGE 10%
IC 10%
tEon
-50
-25
2,9
2,95
3
3,05
3,1
3,15
3,2
-0,2
0
0,2
0,4
0,6
0,8
time (us)
time(us)
V
GE (0%) =
VGE (0%) =
-15
V
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
V
350
15
V
350
15
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,22
0,69
µs
µs
0,07
0,20
µs
µs
Figure 3
Half Bridge IGBT
Figure 4
Half Bridge IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
250
%
%
fitted
VCE
IC
IC
100
200
IC 90%
150
75
50
25
0
IC 60%
VCE
100
IC 90%
IC 40%
tr
50
IC10%
IC 10%
0
tf
-50
-25
3,04
3,06
3,08
3,1
3,12
0,05
0,1
0,15
0,2
0,25
0,3
0,35
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
350
15
V
350
15
V
A
A
0,12
µs
0,02
µs
copyright Vincotech
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2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Switching Definitions Half Bridge
Figure 5
Half Bridge IGBT
Figure 6
Half Bridge IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
%
200
%
Poff
Eoff
100
150
Pon
75
50
Eon
100
50
25
VCE 3%
IC 1%
VGE 10%
VGE 90%
0
0
tEon
tEoff
-50
-25
2,95
3
3,05
3,1
3,15
3,2
-0,2
0
0,2
0,4
0,6
0,8
time (us)
time(us)
Poff (100%) =
Pon (100%) =
Eon (100%) =
5,28
0,63
0,69
kW
mJ
µs
5,28
0,30
0,20
kW
mJ
µs
Eoff (100%) =
tEoff
=
tEon =
Figure 7
Half Bridge IGBT
Figure 8
Neutral Point FWD
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
20
150
%
15
10
5
Id
100
trr
50
Vd
fitted
0
0
IRRM 10%
-5
-50
-10
-15
-20
-100
IRRM 90%
IRRM 100%
-150
3,06
-50
0
50
100
150
200
3,08
3,1
3,12
3,14
time(us)
Qg (nC)
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
15
V
350
15
V
V
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
350
15
V
-22
0,03
A
trr
=
A
µs
180,95
nC
copyright Vincotech
20
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Switching Definitions Half Bridge
Figure 9
Half Bridge IGBT
Figure 10
Half Bridge IGBT
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
120
%
%
Erec
Id
Qrr
100
100
tQrr
80
50
tErec
60
40
20
0
0
-50
Prec
-100
-150
-20
3,06
3,08
3,1
3,12
3,14
3,16
3,08
3,1
3,12
3,14
3,16
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
15
A
5,28
0,05
0,07
kW
mJ
µs
Qrr (100%) =
0,44
0,07
µC
µs
tQrr
=
tErec =
Half Bridge switching measurement circuit
Figure 11
Half Bridge stage switching measurement circuit
copyright Vincotech
21
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Switching Definitions Neutral Point
General conditions
Tj
=
=
=
125 °C
16 Ω
Rgon
Rgoff
16 Ω
Figure 1
Neutral Point IGBT
Figure 2
Neutral Point IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
125
300
%
%
tdoff
IC
250
100
VGE 90%
200
150
IC
75
50
VCE
VCE 90%
100
tEoff
tdon
25
0
50
IC 1%
VGE
VCE 3%
VCE
VGE 10%
IC 10%
0
VGE
tEon
-50
-25
2,95
3
3,05
3,1
3,15
3,2
-0,1
0
0,1
0,2
0,3
0,4
0,5
time (us)
time(us)
V
GE (0%) =
VGE (0%) =
-15
V
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
V
350
15
V
350
15
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,16
0,53
µs
µs
0,07
0,18
µs
µs
Figure 3
Neutral Point IGBT
Figure 4
Neutral Point IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
300
%
Ic
fitted
%
VCE
IC
250
100
Ic
90%
200
150
100
50
75
50
25
0
Ic
60%
VCE
Ic
40%
IC 90%
tr
Ic 10%
IC10%
0
tf
-25
-50
0,0
0,1
0,2
0,3
0,4
3,06
3,08
3,1
3,12
3,14
3,16
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
350
15
V
350
V
A
15
A
0,069
µs
0,016
µs
copyright Vincotech
22
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Switching Definitions Neutral Point
Figure 5
Neutral Point IGBT
Figure 6
Neutral Point IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
%
125
%
Ic
1%
Eon
Eoff
100
100
75
75
Pon
50
50
25
25
Uge 90%
Uge 10%
Uce 3%
Poff
0
0
tEon
tEoff
-25
-25
2,95
3
3,05
3,1
3,15
3,2
3,25
time(us)
-0,1
0
0,1
0,2
0,3
0,4
0,5
time (us)
Poff (100%) =
Pon (100%) =
Eon (100%) =
5,26
0,53
0,53
kW
mJ
µs
5,26
0,30
0,18
kW
mJ
µs
Eoff (100%) =
tEoff
=
tEon =
Figure 7
Neutral Point IGBT
Figure 8
Half Bridge FWD
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
20
150
%
Id
15
10
5
100
trr
50
Ud
0
IRRM 10%
0
-50
-5
fitted
-100
-10
-15
-20
IRRM 90%
IRRM 100%
-150
-200
3,06
3,08
3,1
3,12
3,14
3,16
3,18
time(us)
-50
0
50
100
150
200
Qg (nC)
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
15
V
350
V
V
15
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
350
15
V
-24
0,04
A
trr
=
A
µs
148
nC
copyright Vincotech
23
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Switching Definitions Neutral Point
Figure 9
Half Bridge FWD
Figure 10
Half Bridge FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr= integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
125
%
%
Erec
Id
Qrr
100
100
tQint
tErec
75
50
50
0
-50
25
Prec
0
-100
-150
-25
3
3,3
3,6
3,9
4,2
3
3,3
3,6
3,9
4,2
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
15
A
5,26
0,38
1,00
kW
mJ
µs
Qrr (100%) =
1,51
1,00
µC
µs
tQint
=
tErec =
Neutral Point switching measurement circuit
Figure 11
Neutral Point stage switching measurement circuit
copyright Vincotech
24
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
without thermal paste 12mm housing
without thermal paste 17mm housing
10-FY12M3A025SH-M746F08
10-F112M3A025SH-M746F09
M746F08
M746F09
M746F08
M746F09
Outline
Pinout
copyright Vincotech
25
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
26
2014.12.18. / Revision: 3
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