10-F0062PA200SA01-P996F19
更新时间：2024-09-18 18:06:29
品牌：VINCOTECH
描述：Insulated Gate Bipolar Transistor
概述
规格参数
数据手册10-F0062PA200SA01-P996F19 概述
Insulated Gate Bipolar Transistor IGBT
10-F0062PA200SA01-P996F19 规格参数
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10-F0062PA200SA01-P996F19 数据手册
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PDF下载FZ06 / F0062PA200SA01
preliminary datasheet
flow PHASE0
600V/200A
Features
flow0 housing
● Trench Fieldstop IGBT3 technology
● 2-clip housing in 12mm and 17mm height
● Compact and low inductance design
● AlN substrate for improved performance
Target Applications
Schematic
● Motor Drive
● UPS
Types
● FZ062PA200SA01
● F0062PA200SA01
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Transistor
VCE
IC
ICpulse
Ptot
Collector-emitter break down voltage
DC collector current
600
159
600
V
A
Tj=Tjmax
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
A
Th=80°C
Tc=80°C
288
436
W
V
VGE
±20
tSC
Tj≤150°C
5
μs
VCC
VGE=15V
360
V
Tjmax
Maximum Junction Temperature
175
°C
Inverter Diode
Tj=25°C
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
600
141
400
V
A
Tj=Tjmax
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
A
Th=80°C
Tc=80°C
203
308
W
°C
Tjmax
175
copyright Vincotech
1
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
-40…+150
°C
°C
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
copyright Vincotech
2
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
V
CE [V] or
DS [V]
Tj
Min
Max
V
GS [V]
V
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1
5,8
6,5
2,3
VGE(th) VCE=VGE
0,0032
200
V
V
1,68
1,99
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
1,25
1000
600
0
mA
nA
Ω
0
20
2
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
209
222
32
Rise time
38
ns
267
301
82
td(off)
tf
Turn-off delay time
Rgoff=4 Ω
Rgon=4 Ω
±15
300
200
Fall time
98
1,57
2,56
5,8
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
7,66
Cies
Coss
Crss
QGate
12335
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
769
Reverse transfer capacitance
Gate charge
366
±15
480
200
1240
nC
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
RthJH
Thermal resistance chip to heatsink per chip
0,33
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,73
1,7
160,7
209,6
117
142,4
9,51
17,79
5385
4096
2,32
4,34
2,3
VF
IRRM
trr
Diode forward voltage
200
200
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgoff=4 Ω
0
300
μC
di(rec)max
/dt
A/μs
mWs
Erec
Thermal foil
thickness=76um
Kunze foil KU-
ALF5
RthJH
Thermal resistance chip to heatsink per chip
0,47
K/W
copyright Vincotech
3
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Output Inverter
Figure 1
Output inverter IGBT
Figure 2
Typical output characteristics
Output inverter IGBT
Typical output characteristics
I
C = f(VCE
)
IC = f(VCE)
600
500
400
300
200
100
0
600
500
400
300
200
100
0
0
V
CE (V)
VCE (V)
0
1
2
3
4
5
1
2
3
4
5
At
At
tp =
Tj =
tp =
350
25
μs
350
150
μs
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
Output inverter IGBT
Figure 4
Output inverter FRED
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
200
600
500
400
300
200
100
0
Tj = 25°C
160
120
80
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
40
0
0
VGE (V)
9
VF (V)
1
2
3
4
5
6
7
8
10
0
0,5
1
1,5
2
2,5
3
At
At
tp =
tp =
350
10
μs
350
μs
VCE
=
V
copyright Vincotech
4
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
15
12
9
15
12
9
Eon High T
Eoff High T
Eon Low T
Eoff High T
Eoff Low T
Eoff Low T
6
6
Eon High T
3
3
Eon Low T
0
0
I C (A)
R G ( Ω )
0
100
200
300
400
0
4
8
12
16
20
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
±15
2
300
±15
200
V
V
Rgon
Rgoff
=
=
Ω
Ω
A
2
Figure 7
Output inverter IGBT
Figure 8
Output inverter IGBT
Typical reverse recovery energy loss
as a function of collector current
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
Erec = f(IC)
8
8
Erec
6
4
2
6
Tj = Tjmax -25°C
Tj = Tjmax -25°C
4
Tj = 25°C
Erec
Erec
Tj = 25°C
2
Erec
0
0
0
I C (A)
R G ( Ω )
100
200
300
400
0
4
8
12
16
20
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
300
±15
2
°C
V
25/150
300
°C
V
=
=
=
=
V
±15
V
Rgon
=
Ω
200
A
copyright Vincotech
5
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Output Inverter
Figure 9
Output inverter IGBT
Figure 10
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdon
tdoff
tdoff
tdon
tf
0,1
0,1
tr
tf
tr
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
0
100
200
300
400
0
4
8
12
16
20
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
300
±15
2
°C
V
150
300
±15
200
°C
V
=
=
=
=
V
V
Rgon
Rgoff
=
=
Ω
Ω
A
2
Figure 11
Output inverter FRED
Figure 12
Output inverter FRED
Typical reverse recovery time as a
function of collector current
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,2
0,6
trr
Tj = Tjmax -25°C
0,5
0,4
0,3
0,2
0,1
trr
0,16
0,12
0,08
0,04
trr
Tj = Tjmax -25°C
Tj = 25°C
trr
Tj = 25°C
0
0
0
0
I C (A)
4
8
12
16
R g on ( Ω ) 20
100
200
300
400
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
300
±15
2
°C
V
25/150
°C
V
=
=
300
200
±15
V
A
Rgon
=
VGE =
Ω
V
copyright Vincotech
6
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Output Inverter
Figure 13
Output inverter FRED
Figure 14
Output inverter FRED
Typical reverse recovery charge as a
function of collector current
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q
rr = f(IC)
Qrr = f(Rgon)
30
30
Qrr
25
20
15
10
5
25
Qrr
Tj = Tjmax -25°C
20
15
10
5
Tj = Tjmax -25°C
Qrr
Tj = 25°C
Qrr
Tj = 25°C
0
0
0
I C (A)
R g on ( Ω)
100
200
300
400
0
4
8
12
16
20
At
At
Tj =
Tj =
VCE
VGE
25/150
300
±15
2
°C
V
25/150
300
°C
V
=
=
VR =
IF =
V
200
A
Rgon
=
VGE =
Ω
±15
V
Figure 15
Output inverter FRED
Figure 16
Output inverter FRED
Typical reverse recovery current as a
function of collector current
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(IC)
IRRM = f(Rgon)
300
300
240
180
120
60
IRRM
240
180
120
Tj = Tjmax -25°C
IRRM
Tj = Tjmax - 25°C
Tj = 25°C
IRRM
Tj = 25°C
IRRM
60
0
0
I C (A)
R gon ( Ω )
0
4
8
12
16
20
0
100
200
300
400
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
300
±15
2
°C
V
25/150
300
°C
V
=
=
V
200
A
Rgon
=
VGE =
Ω
±15
V
copyright Vincotech
7
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Output Inverter
Figure 17
Output inverter FRED
Figure 18
Output inverter FRED
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
10000
10000
dI0/dt
dI0/dt
di0/dtHigh T
μ
dIrec/dt
dIrec/dt
8000
8000
6000
4000
2000
0
dIo/dtLow T
Tj = 25°C
Tj = Tjmax - 25°C
dIrec/dtLow T
6000
4000
dIrec/dtHigh T
2000
0
I C (A)
R gon ( Ω )
0
100
200
300
400
0
4
8
12
16
20
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
300
±15
2
°C
25/150
300
°C
V
=
=
V
V
Ω
200
A
Rgon
=
VGE =
±15
V
Figure 19
Output inverter IGBT
Figure 20
Output inverter FRED
IGBT transient thermal impedance
as a function of pulse width
FRED transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
ZthJH = f(tp)
100
100
10-1
10-1
D = 0,5
0,2
D = 0,5
0,2
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-5
10-4
10-3
10-2
10-1
100
1011
10-4
10-3
10-2
10-1
100
1011
t p (s)
t p (s)
At
At
tp / T
0,33
tp / T
0,47
D =
RthJH
D =
=
RthJH =
K/W
K/W
IGBT thermal model values
FRED thermal model values
R (C/W)
0,01
Tau (s)
R (C/W)
0,02
Tau (s)
9,3E+00
1,4E+00
1,9E-01
4,7E-02
2,5E-03
2,9E-04
9,4E+00
1,2E+00
1,5E-01
4,0E-02
3,0E-03
3,3E-04
0,07
0,08
0,12
0,15
0,09
0,15
0,02
0,03
0,02
0,03
copyright Vincotech
8
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Output Inverter
Figure 21
Output inverter IGBT
Figure 22
Output inverter IGBT
Power dissipation as a
function of heatsink temperature
Collector current as a
function of heatsink temperature
Ptot = f(Th)
IC = f(Th)
600
250
200
150
100
50
500
400
300
200
100
0
0
0
T h
(
o C)
T h (
o C)
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
single heating
overall heating
175
15
°C
V
=
Figure 23
Output inverter FRED
Figure 24
Forward current as a
Output inverter FRED
Power dissipation as a
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
400
250
200
150
100
50
320
240
160
80
0
0
0
T h
(
o C)
T h (
o C)
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
single heating
overall heating
175
°C
copyright Vincotech
9
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Output Inverter
Figure 25
Output inverter IGBT
Figure 26
Gate voltage vs Gate charge
Output inverter IGBT
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
)
22
10uS
20
18
16
14
12
10
8
100uS
103
102
101
1mS
DC
100mS
480V
120V
10mS
6
4
100
2
0
0
10-1
100
200
400
600
800
1000
1200
1400
Q g (nC)
1600
103
101
102
VCE (V)
At
At
IC
=
D =
Th =
200
A
single pulse
80
ºC
VGE
Tj =
=
±15
V
Tjmax
ºC
copyright Vincotech
10
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
2 Ω
Rgon
Rgoff
2 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon
)
210
%
140
%
IC
120
tdoff
VCE
170
100
VGE 90%
VCE 90%
80
60
40
20
0
130
VCE
IC
90
tEoff
VGE
tdon
50
IC10%
IC 1%
VCE 3%
VGE
VGE10%
10
-20
tEon
-40
-30
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
time (us)
2,8
2,95
3,1
3,25
3,4
3,55
3,7
time(us)
VGE (0%) =
VGE (0%) =
-15
V
-15
V
V
GE (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
15
V
VC (100%) =
IC (100%) =
300
203
0,30
0,70
V
300
203
0,22
0,41
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
μs
μs
μs
μs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
140
210
%
fitted
%
120
IC
VCE
170
100
80
60
40
20
0
IC 90%
130
VCE
IC
60%
IC90%
90
50
IC 40%
tr
IC10%
Ic
10
IC10%
tf
-20
-30
0,15
0,2
0,25
0,3
0,35
0,4
0,45
time (us)
2,95
3,1
3,25
3,4
3,55
3,7
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
300
203
0,10
V
300
203
0,04
V
A
A
μs
μs
copyright Vincotech
11
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
120
%
%
Poff
Eoff
Eon
100
80
100
80
60
60
Pon
40
40
20
20
VGE 10%
VCE
3%
VGE 90%
0
0
tEoff
tEon
IC 1%
-20
-20
2,9
3
3,1
3,2
3,3
3,4
3,5
3,6
time(us)
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
0,85
time (us)
Poff (100%) =
off (100%) =
tEoff
Pon (100%) =
Eon (100%) =
60,82
kW
mJ
μs
60,82
kW
mJ
μs
E
7,80
0,70
2,63
0,41
=
tEon =
Figure 7
Output inverter FRED
Figure 8
Output inverter IGBT
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
20
120
%
15
10
5
Id
80
trr
fitted
40
Vd
0
0
IRRM10%
-5
-40
-10
-15
-20
-80
IRRM90%
IRRM100%
-120
3,1
3,2
3,3
3,4
3,5
3,6
time(us)
3,7
-500
0
500
1000
1500
2000
2500
Qg (nC)
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
V
300
V
15
V
203
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
300
V
-211
0,14
A
trr
=
203
A
μs
9547,24
nC
copyright Vincotech
12
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Switching Definitions Output Inverter
Figure 9
Output inverter FRED
Figure 10
Output inverter FRED
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
120
%
Erec
%
Qrr
100
100
Id
80
60
40
20
0
50
tQrr
tErec
0
-50
Prec
-100
-150
-20
3,1
3,25
3,4
3,55
3,7
3,85
4
time(us)
3,1
3,25
3,4
3,55
3,7
3,85
4
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
203
A
60,82
3,89
0,55
kW
mJ
μs
Qrr (100%) =
16,33
0,55
μC
μs
tQrr
=
tErec =
copyright Vincotech
13
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
without thermal paste 12mm housing
without thermal paste 17mm housing
10-FZ062PA200SA01-P996F18
10-F0062PA200SA01-P996F19
P996F18
P996F19
P996F18
P996F19
Outline
Pinout
copyright Vincotech
14
Revision: 1
FZ06 / F0062PA200SA01
preliminary datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Product Status
Definition
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
Target
Formative or In Design
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Preliminary
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
Final
Full Production
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
15
Revision: 1
10-F0062PA200SA01-P996F19 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 10-F0062TA030FB-P983D19 | VINCOTECH | Vincotech clip-in housing | 获取价格 |
|
| 10-F0062TA030FB03-P983D49 | VINCOTECH | Vincotech clip-in housing | 获取价格 |
|
| 10-F0062TA080P7-P980D79 | VINCOTECH | Commutation rugged;Easy to use / drive;Suitable for hard and soft switching | 获取价格 |
|
| 10-F006PPA010M701-LT23B79 | VINCOTECH | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC | 获取价格 |
|
| 10-F006PPA010SB-M683 | VINCOTECH | Easy to use / drive;Extremly low losses;Very high commutation ruggedness | 获取价格 |
|
| 10-F006PPA010SB03-M683B5 | VINCOTECH | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current | 获取价格 |
|
| 10-F006PPA015SB04-M684B09 | VINCOTECH | Easy paralleling;Low turn-off losses;Positive temperature coefficient;Short tail current | 获取价格 |
|
| 10-F006PPA020SB01-M685B1 | VINCOTECH | Easy paralleling;Low turn-off losses;Positive temperature coefficient;Short tail current | 获取价格 |
|
| 10-F006PPA020SB02-M685B3 | VINCOTECH | Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching | 获取价格 |
|
| 10-F006PPA020SB03-M685B09 | VINCOTECH | Easy paralleling;Low turn-off losses;Positive temperature coefficient;Short tail current | 获取价格 |
|
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