10-F006PPA020SB02-M685B3 [VINCOTECH]
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching;
| 型号： | 10-F006PPA020SB02-M685B3 |
| 厂家： | 
VINCOTECH |
| 描述： | Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching |
| 文件： | 总32页 (文件大小：12427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-F006PPA020SB02-M685B30
datasheet
flowPIM 0 + PFC
600 V / 20 A
Features
flow 0 17 mm housing
● Clip in PCB mounting
● Trench Fieldstop IGBT's for low saturation losses
● High speed IGBT in the PFC circuit
● Integrated NTC
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-F006PPA020SB02-M685B30
Copyright Vincotech
1
15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
24
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
53
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
32
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
52
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VCES
Collector-emitter voltage
650
44
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
72
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
VRRM
Peak repetitive reverse voltage
650
46
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
63
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
PFC Sw. Inverse Diode
VRRM
Peak repetitive reverse voltage
650
15
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
12
A
Ptot
36
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
33
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
44
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
PFC Shunt
I
DC current
Tc = 70 °C
Tc = 70 °C
32
5
A
Ptot
Top
Power dissipation
W
°C
Operation Temperature
-55 ... 170
Copyright Vincotech
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10-F006PPA020SB02-M685B30
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Capacitor (PFC)
VMAX
Maximum DC voltage
500
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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10-F006PPA020SB02-M685B30
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00029 25
5
5,8
6,5
V
25
20
1,1
1,53
1,85
1,9(1)
15
0
V
150
600
0
25
25
1,1
µA
nA
Ω
20
300
None
1100
71
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
32
VCC = 480 V
15
20
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,81
K/W
25
65,6
65,2
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
19,8
tr
125
25
21
Rgon = 16 Ω
Rgoff = 16 Ω
141,8
167
td(off)
Turn-off delay time
Fall time
ns
125
25
±15
400
15
76,33
86,36
0,45
tf
ns
125
25
QrFWD=0,883 µC
QrFWD=1,79 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
0,667
0,385
0,523
125
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10-F006PPA020SB02-M685B30
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,65
1,61
1,95(1)
27
VF
IR
Forward voltage
30
V
125
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,81
K/W
25
10,06
13,55
173,99
233,08
0,883
1,79
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
di/dt=731 A/µs
di/dt=708 A/µs
Qr
±15
400
15
μC
125
25
0,236
0,474
36,18
85,35
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
Copyright Vincotech
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10-F006PPA020SB02-M685B30
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0005
50
25
3,3
4
4,7
V
V
25
1,52
1,64
1,7
2,22(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
None
3000
50
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
11
VCC = 520 V
15
50
120
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,32
K/W
25
19,2
19,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
19,04
9,76
tr
125
150
25
11,04
11,52
87,36
103,52
107,68
5
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
400
50
tf
125
150
25
4,22
ns
4,39
QrFWD=1,66 µC
QrFWD=3,14 µC
QrFWD=3,57 µC
0,365
0,58
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,624
0,364
0,476
0,518
Eoff
125
150
Copyright Vincotech
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10-F006PPA020SB02-M685B30
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,5
1,92(1)
2,65
VF
IR
Forward voltage
50
125
150
1,44
1,42
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,5
K/W
25
56,36
70,28
74,71
47,37
78,83
87,49
1,66
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=4427 A/µs
di/dt=4057 A/µs
di/dt=4001 A/µs
Qr
Recovered charge
0/15
400
50
125
150
25
3,14
μC
3,57
0,555
1,02
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,17
1599
1123
1211
(dirf/dt)max
125
150
Copyright Vincotech
8
15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Sw. Inverse Diode
Static
25
1,23
1,72
1,58
1,54
1,87(1)
VF
IR
Forward voltage
6
125
150
V
Reverse leakage current
Vr = 650 V
25
0,1
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,65
K/W
Rectifier Diode
Static
25
0,996
0,907
1,21(1)
1,1(1)
VF
IR
Forward voltage
8
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
PFC Shunt
Static
R
Resistance
6,8
mΩ
%
Tolerance
-1
1
Temperature coeficient
tc
100
ppm/K
Copyright Vincotech
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10-F006PPA020SB02-M685B30
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (PFC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
100
2,5
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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10-F006PPA020SB02-M685B30
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
50
40
30
20
10
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
V
CE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj:
VGE
Tj =
150 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Short circuit withstand time as a function of VGE
IC = f(VGE
)
tsc = f(VGE)
20
13
12
11
10
9
15
10
5
8
7
6
0
0
5
10
2
4
6
8
10
12
11
12
13
14
15
16
V
GE(V)
V
GE(V)
tp
VCE
=
=
VCE
=
250
10
μs
V
At
333
333
V
25 °C
Tj:
Tj ≤
150 °C
°C
Copyright Vincotech
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10-F006PPA020SB02-M685B30
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Transient thermal impedance as a function of pulse width
Typical short circuit current as a function of VGE
ISC = f(VGE
)
Zth(j-s) = f(tp)
1
10
350
300
250
200
150
100
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
12
13
14
15
16
17
18
19
20
21
10
10
10
tp(s)
V
GE(V)
VCE
=
At
333
333
V
D =
tp / T
1,808
Tj ≤
°C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,63E-02
1,83E-01
8,24E-01
3,93E-01
1,96E-01
1,49E-01
3,68E+00
4,61E-01
8,38E-02
1,82E-02
3,57E-03
3,52E-04
figure 7.
IGBT
figure 8.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
20,0
17,5
15,0
12,5
10,0
7,5
10µs
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
5,0
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
150
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
33
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
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10-F006PPA020SB02-M685B30
datasheet
Inverter Diode Characteristics
figure 9.
FWD
figure 10.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,811
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,35E-02
2,01E-01
7,60E-01
4,22E-01
2,13E-01
1,40E-01
4,59E+00
4,81E-01
9,25E-02
1,80E-02
3,31E-03
3,46E-04
Copyright Vincotech
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10-F006PPA020SB02-M685B30
datasheet
PFC Switch Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
125
VGE
:
7 V
8 V
125
100
75
50
25
0
9 V
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 13.
IGBT
figure 14.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
50
10
40
30
20
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,316
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,31E-01
4,26E-01
5,06E-01
1,72E-01
8,20E-02
1,38E+00
1,35E-01
3,67E-02
5,83E-03
4,05E-04
Copyright Vincotech
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datasheet
PFC Switch Characteristics
figure 15.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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10-F006PPA020SB02-M685B30
datasheet
PFC Diode Characteristics
figure 16.
FWD
figure 17.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
-2
10
50
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,501
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,03E-01
2,05E-01
6,39E-01
3,39E-01
1,71E-01
4,45E-02
4,73E+00
5,53E-01
8,31E-02
2,02E-02
4,42E-03
1,30E-03
Copyright Vincotech
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datasheet
PFC Sw. Inverse Diode Characteristics
figure 18.
FWD
figure 19.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
17,5
15,0
12,5
10,0
7,5
10
0
10
-1
10
0,5
0,2
0,1
5,0
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,646
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,02E-01
3,50E-01
9,53E-01
7,66E-01
4,76E-01
2,56E+00
1,72E-01
3,96E-02
5,83E-03
9,87E-04
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Rectifier Diode Characteristics
figure 20.
Rectifier
figure 21.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,594
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,81E-02
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
7,88E-04
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Thermistor Characteristics
figure 22.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Inverter Switching Characteristics
figure 23.
IGBT
figure 24.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
Ω
125 °C
400
±15
15
V
V
A
125 °C
Rgon
Rgoff
16
figure 25.
FWD
figure 26.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
125 °C
400
±15
15
V
125 °C
V
A
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Inverter Switching Characteristics
figure 27.
IGBT
figure 28.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
-1
10
-1
10
tf
tf
td(on)
tr
tr
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
±15
16
°C
V
125
400
±15
15
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 29.
FWD
figure 30.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
125 °C
400
±15
15
V
V
A
125 °C
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Inverter Switching Characteristics
figure 31.
FWD
figure 32.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
125 °C
400
±15
15
V
V
A
125 °C
figure 33.
FWD
figure 34.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
15,0
12,5
10,0
7,5
45
40
35
30
25
20
15
10
5
IRM
IRM
5,0
IRM
IRM
2,5
0,0
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
125 °C
400
±15
15
V
125 °C
V
A
Copyright Vincotech
22
15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Inverter Switching Characteristics
figure 35.
FWD
figure 36.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
1200
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1000
800
600
400
200
0
0
5
10
15
20
25
30
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
16
V
V
Ω
125 °C
400
±15
15
V
V
A
125 °C
figure 37.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
125
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
PFC Switching Characteristics
figure 38.
IGBT
figure 39.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eoff
Eon
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 40.
FWD
figure 41.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
PFC Switching Characteristics
figure 42.
IGBT
figure 43.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-2
10
-3
10
td(off)
-1
-2
-3
10
10
10
td(on)
tr
td(on)
tr
tf
tf
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
4
°C
V
150
400
0/15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 44.
FWD
figure 45.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,12
0,10
0,08
0,06
0,04
0,02
0,00
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
PFC Switching Characteristics
figure 46.
FWD
figure 47.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
6
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 48.
FWD
figure 49.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
100
80
60
40
20
0
80
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
PFC Switching Characteristics
figure 50.
FWD
figure 51.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
6000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
5000
4000
3000
2000
1000
0
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 52.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Switching Definitions
figure 53.
IGBT
figure 54.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 55.
IGBT
figure 56.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Switching Definitions
figure 57.
FWD
figure 58.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-F006PPA020SB02-M685B30
10-F006PPA020SB02-M685B30-/7/
10-F006PPA020SB02-M685B30-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC-Rect
DC-SH
S2SH2
S1SH2
DC-PFC
G27
33,5
30,7
28
2
0
3
0
4
25,3
22,6
19,9
17,2
13,5
10,8
8,1
5,4
2,7
0
0
5
0
6
0
7
0
S27
8
0
G11
9
0
DC-1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
0
G13
0
DC-2
0
G15
0
DC-3
0
8,6
11,45
19,8
22,5
19,8
22,5
19,8
22,5
22,5
22,5
22,5
22,5
15
Therm1
Therm2
G16
0
0
0
Ph3
6
G14
6
Ph2
12
G12
12
Ph1
17,7
20,5
26,5
33,5
33,5
33,5
DC+INV
DC+PFC
PFC
DC+Rect
ACIn1
ACIn2
7,5
Copyright Vincotech
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15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Pinout
DC+Rect
25
PFC DC+PFC
24 23
DC+Inv
22
T12
T14
T16
D11
D13
D15
D27
D32
D34
G12
20
G14
18
G16
16
Ph1
21
C27
ACIn1
26
Ph2
19
ACIn2
27
Ph3
17
T27
D47
G27
S27
D31
D33
T11
T13
T15
6
7
D16
D12
D14
G11
8
G13
10
G15
12
Rt
SH2
DC-Rect
1
DC-PFC S1SH2
S2SH2 DC-SH
DC-1
9
DC-2
11
DC-3
13
Therm1
14
Therm2
15
5
4
3
2
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
20 A
Inverter Switch
T15, T16
D11, D12, D13, D14,
FWD
600 V
30 A
Inverter Diode
D15, D16
T27
IGBT
FWD
650 V
650 V
650 V
1600 V
50 A
50 A
6 A
PFC Switch
PFC Diode
D27
D47
FWD
PFC Sw. Inverse Diode
Rectifier Diode
PFC Shunt
D31, D32, D33, D34
Rectifier
Shunt
25 A
SH2
C27
Rt
Capacitor
Thermistor
500 V
Capacitor (PFC)
Thermistor
Copyright Vincotech
31
15 Sep. 2021 / Revision 2
10-F006PPA020SB02-M685B30
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-F006PPA020SB02-M685B30-D1-14
11 May. 2021
New Datasheet format
Correct Thermal values of Inverter Diode
PFC Shunt change
10-F006PPA020SB02-M685B30-D2-14
15 Sep. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
15 Sep. 2021 / Revision 2
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