10-F012PMA005M7-P848A29 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 10-F012PMA005M7-P848A29 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总32页 (文件大小：3189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
1200 V / 5 A
flow PIM 0
Features
flow 0 housing
● IGBT M7 with low V CEsat and improved EMC behavior
● Open emitter configuration
● Compact and low inductive design
● Builtin NTC
12 mm housing
17 mm housing
Schematic
Target applications
● Industrial Drives
Types
● 10-FZ12PMA005M7-P848A28
● 10-F012PMA005M7-P848A29
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1600
25
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
200
200
44
A
50 Hz Single Half Sine Wave
tp = 10 ms
Tj = 150 °C
A2s
W
°C
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Maximum Junction Temperature
150
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10-F012PMA005M7-P848A29
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
5
V
A
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
10
A
Tj = Tjmax
Ts = 80 °C
41
W
V
±20
175
Maximum junction temperature
°C
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
5
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj limited by Tjmax
Tj = Tjmax
10
A
Ts = 80 °C
27
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
5
V
A
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
10
A
Ts = 80 °C
41
W
V
±20
175
Maximum junction temperature
°C
Brake Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
5
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj limited by Tjmax
Tj = Tjmax
10
A
Ts = 80 °C
27
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
9,29 / min. 12,7
> 200
mm
mm
Clearance
12 mm housing / 17 mm housing
Comparative Tracking Index
*100 % tested in production
CTI
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,22
1,21
1,8
VF
Ir
Forward voltage
Reverse leakage current
Thermal
30
V
125
25
50
1600
145
µA
1100
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
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Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0005 25
25
5,4
6
6,6
V
V
1,62
1,83
1,89
1,95
VCEsat
Collector-emitter saturation voltage
15
5
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
50
µA
nA
Ω
20
500
none
1100
57
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
11
15
600
5
40
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,30
K/W
Dynamic
25
153
150
147
td(on)
125
150
25
Turn-on delay time
39
tr
Rise time
125
150
25
43
43
154
Rgoff = 64 Ω
Rgon = 64 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
176
181
89
115
±15
600
5
tf
111
0,480
0,601
0,643
0,333
0,437
0,473
Qr
FWD
Qr
FWD
Qr
FWD
= 0,6 μC
= 0,8 μC
= 1 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
125
150
1,57
1,65
1,65
2,1
20
VF
IR
Forward voltage
5
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
3,50
K/W
Dynamic
25
4
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
4
4
Peak recovery current
A
259
376
434
0,551
0,773
0,985
0,186
0,273
0,378
46
trr
Qr
Reverse recovery time
ns
di/dt = 83 A/μs
di/dt = 111 A/μs ±15
di/dt = 92 A/μs
600
5
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
24
25
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0005 25
25
5,4
6
6,6
V
V
1,62
1,83
1,89
1,95
VCEsat
Collector-emitter saturation voltage
15
5
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
50
µA
nA
Ω
20
500
none
1100
57
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
11
15
600
5
40
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,30
K/W
Dynamic
25
79
73
72
td(on)
Turn-on delay time
125
150
25
45
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
48
49
Rgoff = 64 Ω
Rgon = 64 Ω
ns
234
262
270
101
114
117
0,480
0,609
0,634
0,345
0,454
0,474
td(off)
Turn-off delay time
Fall time
15/0
600
5
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 0,6 μC
= 0,8 μC
= 0,9 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Diode
Static
25
125
150
1,57
1,65
1,65
2,1
20
VF
IR
Forward voltage
5
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
3,50
K/W
Dynamic
25
4
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
4
4
Peak recovery current
A
259
386
431
0,558
0,833
0,935
0,200
0,314
0,363
37
trr
Qr
Reverse recovery time
ns
di/dt = 85 A/μs
di/dt = 102 A/μs 15/0
di/dt = 87 A/μs
600
5
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
24
20
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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datasheet
Rectifier Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
tp / T
1,59
T j:
K/W
Diode thermal model values
R (K/W)
τ
(s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,22E-01
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
1,79E-03
Copyright Vincotech
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10-F012PMA005M7-P848A29
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
2,30
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
6,25E-02
1,37E-01
7,38E-01
5,28E-01
3,84E-01
2,39E-01
2,13E-01
3,48E+00
5,00E-01
8,11E-02
2,49E-02
5,54E-03
1,24E-03
3,29E-04
Copyright Vincotech
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datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
Tj:
3,50
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,03E-02
2,34E-01
1,33E+00
7,92E-01
5,71E-01
4,85E-01
7,23E+00
4,70E-01
6,36E-02
2,24E-02
3,34E-03
7,05E-04
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datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
2,30
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
6,25E-02
1,37E-01
7,38E-01
5,28E-01
3,84E-01
2,39E-01
2,13E-01
3,48E+00
5,00E-01
8,11E-02
2,49E-02
5,54E-03
1,24E-03
3,29E-04
Copyright Vincotech
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10-F012PMA005M7-P848A29
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
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datasheet
Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
3,50
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
8,03E-02
2,34E-01
1,33E+00
7,92E-01
5,71E-01
4,85E-01
7,23E+00
4,70E-01
6,36E-02
2,24E-02
3,34E-03
7,05E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
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Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
With an inductive load at
With an inductive load at
600
±15
64
V
V
Ω
Ω
j
:
600
±15
5
V
V
A
125 °C
150 °C
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
64
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
64
V
V
Ω
:
600
±15
5
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
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Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
64
°C
V
150
600
±15
5
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
64
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
600
V
V
Ω
25 °C
125 °C
150 °C
600
±15
5
V
V
A
25 °C
At
VCE
=
At
VCE =
±15
64
:
Tj
:
Tj
125 °C
150 °C
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
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Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
600
±15
64
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
±15
5
:
Tj
125 °C
150 °C
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
600
600
±15
64
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
At
VCE
=
At
VCE =
:
Tj
±15
5
:
Tj
125 °C
150 °C
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
18
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
dir r/dt
i
i
i
i
dirr
/dt
i
i
i
i
At
VCE
=
600
±15
64
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
5
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
64
64
Ω
Copyright Vincotech
19
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
64 Ω
T j
Rgon
R goff
64 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VCE
VGE
tEoff
VGE
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
600
5
V
600
5
V
A
A
0,176
0,786
μs
μs
0,149
0,547
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
600
V
600
5
V
VC (100%) =
I C (100%) =
VC (100%) =
I C (100%) =
5
A
A
0,115
μs
0,043
μs
t f
=
tr =
Copyright Vincotech
20
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEon
tEoff
P off (100%) =
Eoff (100%) =
3,01
0,44
0,79
kW
P on (100%) =
Eon (100%) =
3,01
0,60
0,55
kW
mJ
μs
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
600
V
5
A
-4
A
0,387
μs
t rr
=
Copyright Vincotech
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18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Inverter Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
Qr
Erec
tErec
IF
Prec
5
A
3,01
0,33
2,00
kW
mJ
μs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
0,87
2,00
μC
μs
t Qr
=
tErec =
Copyright Vincotech
22
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Brake Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g
)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
With an inductive load at
With an inductive load at
600
15/0
64
V
V
Ω
Ω
j
:
600
15/0
5
V
V
A
125 °C
150 °C
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
64
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c
)
Erec = f(R g
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
15/0
64
V
V
Ω
:
600
15/0
5
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
23
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
15/0
64
°C
V
150
600
15/0
5
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
V
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
64
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
At
VCE
=
600
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
15/0
5
V
V
A
25 °C
15/0
64
:
Tj
:
Tj
125 °C
150 °C
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
24
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Brake Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
600
15/0
64
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
15/0
5
:
Tj
125 °C
150 °C
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I
I I
I I
I
600
600
15/0
64
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
At
VCE
=
At
VCE =
:
Tj
15/0
5
:
Tj
125 °C
150 °C
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
25
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Brake Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
dirr/dt
i
i
i
i
dir r
/dt
i
i
i
i
At
VCE
=
600
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
V
V
A
25 °C
15/0
64
:
Tj
15/0
5
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
64
64
Ω
Copyright Vincotech
26
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Brake Switching Definitions
General conditions
=
=
=
125 °C
64 Ω
T j
Rgon
R goff
64 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
VCE
IC
VGE
VGE
tEoff
VCE
tEon
VGE (0%) =
0
V
VGE (0%) =
0
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
5
V
600
5
V
A
A
0,262
0,874
μs
μs
0,073
0,467
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
600
5
V
A
600
5
V
A
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
0,114
μs
0,048
μs
tr
=
Copyright Vincotech
27
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Poff
Eon
tEon
tEoff
P off (100%) =
Eoff (100%) =
3,03
0,45
0,87
kW
mJ
μs
P on (100%) =
Eon (100%) =
3,03
0,61
0,47
kW
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
600
V
5
A
-4
A
0,386
μs
t rr
=
Copyright Vincotech
28
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Brake Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
Erec
Qr
tErec
IF
Prec
5
A
3,03
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
0,83
1,00
μC
μs
0,31
1,00
mJ
μs
t Qr
=
tErec =
Copyright Vincotech
29
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
without thermal paste 17 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
Ordering Code
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
10-FZ12PMA005M7-P848A28-/3/
10-F012PMA005M7-P848A29-/3/
Name
Text
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
V IN LLLLL SSSS
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
2,7
0
Function
Therm1
25,5
25,5
22,8
20,1
16,2
13,5
10,8
8,1
2
Therm2
DC-Rect
G27
3
0
P848A28
4
0
5
0
DC-Br
G15
6
0
7
0
DC-3
G13
8
0
9
5,4
0
DC-2
10
11
12
13
2,7
0
0
G11
DC-1
G12
0
0
0
19,8
22,5
P848A29
Ph1
14
15
16
17
18
19
20
21
22
23
7,5
7,5
19,8
22,5
19,8
22,5
22,5
22,5
22,5
15
G14
Ph2
15
G16
15
Ph3
22,8
25,5
33,5
33,5
33,5
33,5
DC+Inv
DC+Rect
Br
ACIn1
ACIn2
ACIn3
7,5
0
Copyright Vincotech
30
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D31, D32, D33, D34,
D35, D36
Rectifier
1600 V
25 A
5 A
Rectifier Diode
Inverter Switch
Inverter Diode
T11, T12, T13, T14,
T15, T16
IGBT
FWD
1200 V
1200 V
D11, D12, D13, D14,
D15, D16
5 A
T27
D27
Rt
IGBT
FWD
NTC
1200 V
1200 V
5 A
5 A
Brake Switch
Brake Diode
Thermistor
Copyright Vincotech
31
18 Feb. 2019 / Revision 2
10-FZ12PMA005M7-P848A28
10-F012PMA005M7-P848A29
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-Fx12PMA005M7-P848A2x-D2-14
18 Feb. 2019
Added thermal paste options to ordering code
30
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
18 Feb. 2019 / Revision 2
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