10-F006PPA010M701-LT23B79 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 10-F006PPA010M701-LT23B79 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总31页 (文件大小：12591K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-F006PPA010M701-LT23B79
datasheet
flowPIM 0 + PFC
650 V / 10 A
Topology features
flow 0 17 mm housing
● Converter+PFC+Inverter
● Open Emitter configuration
● Temperature sensor
Component features
● Easy paralleling
● Low turn-off losses
● Low collector emitter saturation voltage
● Positive temperature coefficient
● Short tail current
● Switching optimized for EMC
Housing features
● Base isolation: Al2O3
● Clip-in, reliable mechanical connection, qualified for wave
soldering
Schematic
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Solder pin
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-F006PPA010M701-LT23B79
Copyright Vincotech
1
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
650
20
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
48
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Inverter Diode
VRRM
Peak repetitive reverse voltage
650
17
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
33
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VDSS
Drain-source voltage
600
23
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
IDM
tp limited by Tjmax
VDD = 50 V
VDD = 50 V
VDS= 0..400 V
Tj = Tjmax
151
159
0,8
80
A
EAS
Avalanche energy, single pulse
Avalanche energy, repetitive
MOSFET dv/dt ruggedness
Total power dissipation
Gate-source voltage
ID = 0 A
ID = 0 A
mJ
mJ
V/ns
W
EAR
dv/dt
Ptot
Ts = 25 °C
Ts = 80 °C
67
VGSS
dv/dt
Tjmax
±20
50
V
Reverse diode dv/dt
V/ns
°C
Maximum Junction Temperature
150
Copyright Vincotech
2
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
VRRM
Peak repetitive reverse voltage
650
13
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
I2t
tp limited by Tjmax
37,5
71
A
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
25
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
35
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
31
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
37
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
0,001
10
25
5,6
6,2
6,8
V
V
25
1,4
1,81(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,49
1,52
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
15
µA
nA
Ω
20
200
None
1300
24
Cies
Cres
pF
pF
0
10
25
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,99
K/W
25
52,64
49,92
49,76
23,52
24,48
24,48
92,64
109,76
112,96
97,15
115,26
120,43
0,156
0,227
0,249
0,362
0,501
0,536
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
10
tf
125
150
25
ns
QrFWD=0,367 µC
QrFWD=0,746 µC
QrFWD=0,861 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,23
1,67
1,56
1,87(1)
0,14
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Vr = 650 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,87
K/W
25
5,37
7,77
IRM
Peak recovery current
125
150
25
A
8,26
175,53
241,84
258,22
0,367
0,746
0,861
0,1
trr
Reverse recovery time
125
150
25
ns
di/dt=360 A/µs
di/dt=349 A/µs
di/dt=362 A/µs
Qr
Recovered charge
±15
350
10
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,2
mWs
A/µs
0,23
116,48
87,46
80,04
(dirf/dt)max
125
150
Copyright Vincotech
5
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
25
63,3
115
60(1)
rDS(on)
VGS(th)
IGSS
IDSS
rg
Drain-source on-state resistance
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
10
0
15,9
mΩ
V
125
0,0008
25
25
25
3
3,5
4
100
1
20
0
0
nA
µA
Ω
600
2,8
67
Qg
0/10
0
400
400
15,9
0
25
25
nC
Ciss
Short-circuit input capacitance
Short-circuit output capacitance
2895
48
f = 250 kHz
pF
Coss
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,05
K/W
25
22,88
21,92
5,28
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
tr
125
25
5,6
Rgon = 4 Ω
Rgoff = 4 Ω
72
td(off)
Turn-off delay time
Fall time
ns
125
25
79,68
11,88
10,83
0,011
0,015
0,049
0,054
0/10
400
20
tf
ns
125
25
QrFWD=0,024 µC
QrFWD=0,026 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
Copyright Vincotech
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26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,49
1,74
1,84
1,8(1)
VF
IR
Forward voltage
8
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
10
51
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,74
K/W
25
13,3
12,44
6,7
IRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
trr
ns
125
25
6,91
0,024
0,026
0,019
0,018
4730
4486
di/dt=4860 A/µs
di/dt=4365 A/µs
Qr
0/10
400
20
μC
125
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
Copyright Vincotech
7
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,12
1,03
1,02
1,5(1)
VF
IR
Forward voltage
18
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,87
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
30
30
VGE
:
7 V
8 V
25
20
15
10
5
25
20
15
10
5
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
10,0
10
0
7,5
5,0
2,5
0,0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
15
μs
V
D =
tp / T
1,993
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,17E-01
4,31E-01
8,29E-01
3,94E-01
2,23E-01
2,39E+00
1,57E-01
3,56E-02
6,16E-03
7,29E-04
Copyright Vincotech
9
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,873
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
Copyright Vincotech
11
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
PFC Switch Characteristics
figure 8.
MOSFET
figure 9.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
80
80
VGS
:
-4 V
-2 V
0 V
60
40
2 V
60
40
20
0
4 V
6 V
8 V
20
10 V
12 V
14 V
16 V
18 V
20 V
0
-20
-40
-60
-80
0,0
2,5
5,0
7,5
10,0
12,5
-5,0
-2,5
0,0
2,5
5,0
7,5
10,0
12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
10
μs
V
250
125
μs
°C
25 °C
Tj:
VGS
Tj =
125 °C
VGS from -4 V to 20 V in steps of 2 V
figure 10.
MOSFET
figure 11.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
40
10
35
30
25
20
15
10
5
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
1
2
3
4
5
6
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,047
25 °C
Tj:
VDS
125 °C
Rth(j-s) =
K/W
MOSFET thermal model values
R (K/W)
τ (s)
6,31E-02
2,11E-01
5,41E-01
1,55E-01
7,68E-02
1,89E+00
2,50E-01
5,16E-02
6,52E-03
6,66E-04
Copyright Vincotech
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26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
PFC Switch Characteristics
figure 12.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
10
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
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26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
PFC Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,742
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,36E-01
5,61E-01
9,94E-01
8,51E-01
1,99E-01
1,88E+00
1,67E-01
3,59E-02
6,29E-03
8,62E-04
Copyright Vincotech
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26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
10
10
10
10
VF(V)
tp(s)
tp
=
250
D =
tp / T
1,869
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
5,65E-02
1,70E-01
6,15E-01
6,94E-01
2,16E-01
1,19E-01
8,90E+00
1,08E+00
1,58E-01
5,21E-02
6,16E-03
1,06E-03
Copyright Vincotech
15
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
16
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
Ω
125 °C
150 °C
350
±15
10
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
17
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
-1
10
td(off)
td(on)
td(off)
tf
tf
td(on)
tr
-1
10
tr
-2
10
-3
10
-2
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
16
°C
V
150
350
±15
10
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
18
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
10
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
10
12
10
8
IRM
IRM
8
6
IRM
6
IRM
IRM
4
4
IRM
2
2
0
0,0
0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
10
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
19
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
1200
600
500
400
300
200
100
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
1000
800
600
400
200
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
10
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
22,5
)
IC MAX
20,0
17,5
15,0
12,5
10,0
7,5
5,0
2,5
0,0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
20
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
PFC Switching Characteristics
figure 33.
MOSFET
figure 34.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,125
0,100
0,075
0,050
0,025
0,000
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eon
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
4
V
V
Ω
Ω
125 °C
400
0/10
20
V
V
A
125 °C
Rgon
Rgoff
4
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,025
0,020
0,015
0,010
0,005
0,000
0,025
0,020
0,015
0,010
0,005
0,000
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
400
0/10
4
V
V
Ω
125 °C
400
0/10
20
V
V
A
125 °C
Rgon
Copyright Vincotech
21
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
PFC Switching Characteristics
figure 37.
MOSFET
figure 38.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
td(on)
tf
tr
-2
-2
10
10
tr
tf
-3
10
-3
10
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
0/10
4
°C
V
125
400
0/10
20
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
4
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,012
0,010
0,008
0,006
0,004
0,002
0,000
0,009
0,008
0,007
0,006
0,005
0,004
0,003
0,002
0,001
0,000
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
4
V
V
Ω
At
400
V
V
A
25 °C
25 °C
Tj:
Tj:
VGS
125 °C
0/10
20
125 °C
Rgon
Copyright Vincotech
22
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
PFC Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
4
V
V
Ω
At
400
V
V
A
25 °C
25 °C
Tj:
Tj:
VGS
125 °C
0/10
20
125 °C
Rgon
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
IRM
5,0
5,0
2,5
2,5
0,0
0,0
0,0
0
5
10
15
20
25
30
35
40
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
4
V
V
Ω
At
400
0/10
20
V
25 °C
25 °C
Tj:
Tj:
125 °C
V
A
125 °C
Rgon
Copyright Vincotech
23
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
PFC Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
8000
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
5
10
15
20
25
30
35
40
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
400
0/10
4
V
V
Ω
At
400
0/10
20
V
V
A
25 °C
25 °C
Tj:
Tj:
VGS
125 °C
125 °C
Rgon
figure 47.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
35
ID MAX
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
DS(V)
Tj =
At
125
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
Copyright Vincotech
24
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Inverter Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Inverter Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
PFC Switching Definitions
figure 48.
MOSFET
figure 49.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
MOSFET
figure 51.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
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26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
PFC Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 54.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
28
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-F006PPA010M701-LT23B79
10-F006PPA010M701-LT23B79-/7/
10-F006PPA010M701-LT23B79-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
0
Function
DC-Rect
DC-PFC
33,5
30,7
2
3
not assembled
4
not assembled
5
not assembled
6
19,9
17,2
13,5
10,8
8,1
5,4
2,7
0
0
0
0
G27
S27
G15
7
8
9
0
0
DC-3
G13
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
0
DC-2
G11
0
0
DC-1
Therm1
Therm2
G12
0
8,6
0
11,45
19,8
22,5
19,8
22,5
19,8
22,5
22,5
22,5
22,5
22,5
15
0
0
Ph1
6
G14
6
Ph2
12
G16
12
Ph3
17,7
20,5
26,5
33,5
33,5
33,5
DC+Inv
DC+PFC
PFC
DC+Rect
ACIn1
ACIn2
7,5
Copyright Vincotech
29
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Pinout
DC+Rect
25
PFC
24
DC+PFC
23
DC+Inv
22
D11
D13
D15
D32
D34
T12
T14
T16
D27
G12
16
G14
18
G16
20
Ph1
17
ACIn1
26
Ph2
19
ACIn2
27
Ph3
21
T27
G27
6
D31
D33
D12
D14
D16
T11
T13
T15
S27
7
G11
12
G13
10
G15
8
Rt
Therm1
14
Therm2
15
DC-PFC
2
DC-1
13
DC-2
11
DC-3
9
DC-Rect
1
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
650 V
10 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
FWD
650 V
10 A
D15, D16
T27
MOSFET
FWD
600 V
650 V
49 mΩ
8 A
PFC Switch
PFC Diode
D27
D31, D32, D33, D34
Rt
Rectifier
Thermistor
1600 V
18 A
Rectifier Diode
Thermistor
Copyright Vincotech
30
26 Jul. 2022 / Revision 2
10-F006PPA010M701-LT23B79
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Correct Ifsm and Ifrm of PFC Diode according to PCN-31-
2022
10-F006PPA010M701-LT23B79-D2-14
26 Jul. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
31
26 Jul. 2022 / Revision 2
相关型号：
10-F006PPA010SB-M683
Easy to use / drive;Extremly low losses;Very high commutation ruggedness
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10-F006PPA010SB03-M683B5
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
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