10-EY066PA100SA-L194F38T [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-EY066PA100SA-L194F38T |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总16页 (文件大小：3173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-EY066PA100SA-L194F38T
datasheet
flowPACK E2
600 V / 100 A
Features
flow E2 12 mm housing
● Trench Fieldstop IGBT3 technology
● Standard industrial housing
● Optimized Rth(j-s) with Phase Change Material
● Built-in NTC
Schematic
Target applications
● Industrial Drives
Types
● 10-EY066PA100SA-L194F38T
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
600
88
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
300
152
±20
6
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
600
73
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
300
107
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
9,08
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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10-EY066PA100SA-L194F38T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
VCEsat
ICES
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0016 25
5
5,8
6,5
V
V
25
100
1,05
1,57
1,75
1,85
15
0
125
600
0
25
25
5,1
µA
nA
Ω
IGES
rg
20
600
2
Cies
6160
384
183
Coes
Cres
f = 1 Mhz
25
20
25
pF
Output capacitance
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,62
K/W
Dynamic
25
104
107
108
20
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
23
24
167
191
196
45
Rgon = 2 Ω
Rgoff = 2 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
350
100
tf
125
150
68
79
25
1,698
2,734
3,009
Qr
Qr
= 4,2 μC
= 8,2 μC
FWD
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
FWD
Qr
FWD
= 9 μC
mWs
25
2,422
3,297
125
Eoff
150
3,485
Copyright Vincotech
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23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
100
1,2
1,67
1,69
1,9
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
600
25
660
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,88
K/W
Dynamic
25
73
IRRM
125
150
25
84
86
172
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
263
280
ns
di/dt = 5442 A/μs
di/dt = 4043 A/μs
di/dt = 3821 A/μs
4,151
8,189
8,993
1,009
1,962
2,123
4156
1829
1500
±15
350
100
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
5
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 493 Ω
-5
+5
245
1,4
mW
mW/K
K
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech NTC Reference
K
Copyright Vincotech
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23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
tp
=
250
125
7 V to 17 V in steps of 1 V
μs
Tj:
VGE
=
V
125 °C
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
V
125 °C
=
0,62
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,37E-02
1,09E-01
3,30E-01
7,06E-02
2,75E-02
2,32E-02
2,64E+00
4,49E-01
8,36E-02
1,83E-02
3,23E-03
3,87E-04
Copyright Vincotech
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23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
single pulse
80 ºC
D =
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
D =
tp / T
0,88
Tj:
125 °C
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
3,86E-02
8,37E-02
2,73E-01
3,45E-01
1,03E-01
4,12E-02
6,39E+00
9,86E-01
1,34E-01
3,87E-02
6,86E-03
7,75E-04
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
7
23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
±15
2
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
8
23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
±15
2
°C
V
Tj =
150
350
±15
100
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
t
t
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
9
23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE=
VGE =
I C=
350
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
10
23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
t
t
dirr/dt
i
i
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
350
±15
2
V
V
Ω
Tj:
VCE =
VGE =
I C=
350
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
125
°C
Ω
R gon
R goff
=
=
2
2
Ω
Copyright Vincotech
11
23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Inverter Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
2 Ω
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
100
191
V
350
100
107
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
350
100
68
V
VC (100%) =
I C (100%) =
350
100
23
V
A
A
ns
tr
=
ns
Copyright Vincotech
12
23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
100
84
V
I F (100%) =
Q r (100%) =
100
A
A
8,19
μC
A
trr
=
263
ns
Copyright Vincotech
13
23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with Press-fit pins
with thermal paste 12 mm housing with Press-fit pins
Ordering Code
10-EY066PA100SA-L194F38T
10-EY066PA100SA-L194F38T-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
3,2
0
Function
G16
32
1
2
32
Ph3
Ph3
Ph3
Ph2
Ph2
Ph2
G14
Ph1
Ph1
3
4
28,8
25,6
19,2
16
0
0
5
0
6
0
7
12,8
12,8
6,4
3,2
0
8
3,2
0
9
10
0
11
12
13
0
0
0
0
3,2
19,2
Ph1
G12
Therm1
14
15
16
17
18
19
20
21
22
0
0
28,8
44,8
48
Therm2
G11
0
DC-1
DC-1
DC-1
DC-1
DC-2
G13
3,2
6,4
9,6
12,8
12,8
16
48
48
48
48
44,8
48
DC-2
23
24
25
26
27
28
29
30
31
32
33
19,2
22,4
22,4
25,6
28,8
32
48
48
DC-2
DC-2
G15
44,8
48
DC-3
DC-3
DC-3
DC-3
DC+
DC+
DC+
DC+
48
48
32
44,8
25,6
22,4
19,2
16
12,8
12,8
12,8
12,8
Copyright Vincotech
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23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14,
T15, T16
D11, D12, D13, D14,
D15, D16
IGBT
600 V
100 A
100 A
Inverter Switch
FWD
NTC
600 V
Inverter Diode
Thermistor
Rt
Copyright Vincotech
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23 Aug. 2018 / Revision 1
10-EY066PA100SA-L194F38T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E2 packages see vincotech.com website.
Package data
Package data for flow E2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-EY066PA100SA-L194F38T-D1-14
23 Aug. 2018
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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23 Aug. 2018 / Revision 1
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