首页 |元器件品牌

10-EY126PA075M7-L197F78T [VINCOTECH]

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
10-EY126PA075M7-L197F78T
型号： 10-EY126PA075M7-L197F78T
厂家： VINCOTECH    VINCOTECH
描述：

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
文件： 总16页 (文件大小：3229K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
flowPACK E2  
1200 V / 75 A  
Features  
flow E2 12 mm housing  
● IGBT Mitsubishi gen 7 technology with low VCEsat and  
Improved EMC behavior  
● Standard industrial package  
● Built-in NTC  
Press-fit pin  
Solder pin  
Schematic  
Target applications  
● Industrial Drives  
● UPS  
Types  
● 10-EY126PA075M7-L197F78T  
● 10-E2126PA075M7-L197F78Z  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Switch  
Collector-emitter voltage  
VCES  
1200  
74  
V
A
IC  
Collector current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
Ptot  
VGES  
tSC  
Repetitive peak collector current  
Total power dissipation  
Gate-emitter voltage  
tp limited by Tjmax  
Tj = Tjmax  
150  
135  
±20  
9,5  
A
W
V
Short circuit ratings  
VGE = 15 V  
Vcc = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Copyright Vincotech  
1
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
Inverter Diode  
VRRM  
IF  
IFRM  
Ptot  
Peak repetitive reverse voltage  
1200  
72  
V
A
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
200  
121  
175  
A
Tj = Tjmax  
W
°C  
Tjmax  
Maximum junction temperature  
Module Properties  
Thermal Properties  
Storage temperature  
Tstg  
Tjop  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Isolation Properties  
-40…(Tjmax - 25)  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
Visol  
Isolation voltage  
tp = 1 min  
V
Creepage distance  
Clearance  
min. 12,7  
9,08  
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 600  
Copyright Vincotech  
2
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0075 25  
25  
5,4  
6
6,6  
1,9  
V
V
1,55  
1,70  
1,75  
Collector-emitter saturation voltage  
VCEsat  
15  
75  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
100  
500  
µA  
nA  
Ω
20  
4
Cies  
Coes  
Cres  
Qg  
16000  
480  
Output capacitance  
#VALUE!  
0
10  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
190  
15  
600  
75  
570  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
0,70  
K/W  
Dynamic  
25  
197  
208  
212  
29  
Turn-on delay time  
td(on)  
125  
150  
25  
Rise time  
tr  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
38  
39  
Rgon = 2 Ω  
Rgoff = 2 Ω  
ns  
203  
233  
242  
86  
113  
111  
5,56  
7,82  
8,50  
5,08  
6,80  
Turn-off delay time  
Fall time  
td(off)  
±15  
600  
75  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 8,5 μC  
= 13,4 μC  
= 15,3 μC  
Turn-on energy (per pulse)*  
Eon  
mWs  
125  
Eoff  
Turn-off energy (per pulse)*  
* Ls = 12 nH  
150  
7,29  
Copyright Vincotech  
3
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Diode  
Static  
25  
1,82  
1,96  
1,97  
2,1  
40  
VF  
IR  
125  
150  
Forward voltage  
100  
V
Reverse leakage current  
1200  
25  
µA  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
0,79  
K/W  
Dynamic  
25  
75  
77  
78  
IRRM  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
Peak recovery current  
A
278  
432  
459  
8,54  
13,39  
15,31  
3,20  
5,19  
6,00  
802  
614  
544  
trr  
Qr  
Reverse recovery time  
ns  
di/dt = 2268 A/μs  
di/dt = 1969 A/μs ±15  
di/dt = 1970 A/μs  
600  
75  
Recovered charge  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Thermistor  
Rated resistance  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
5
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 493 Ω  
-5  
+5  
245  
1,4  
mW  
mW/K  
K
B(25/50) Tol. ±2 %  
B(25/100) Tol. ±2 %  
3375  
3437  
B-value  
K
Vincotech NTC Reference  
K
Copyright Vincotech  
4
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Inverter Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
VGE  
:
I
I
tp  
=
250  
15  
μs  
25 °C  
125 °C  
150 °C  
tp  
=
250  
150  
μs  
°C  
VGE  
=
V
Tj:  
Tj =  
VGE from  
7 V to 17 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as function of pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
100  
I
Z
10-1  
10-2  
10-3  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
tp(s)  
102  
tp  
=
100  
10  
μs  
25 °C  
125 °C  
150 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
V
Tj:  
=
0,70  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
3,63E-02  
9,31E-02  
3,22E-01  
1,83E-01  
4,91E-02  
2,13E-02  
4,77E+00  
1,03E+00  
1,68E-01  
5,28E-02  
8,42E-03  
6,25E-04  
Copyright Vincotech  
5
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
Safe operating area  
I C = f(VCE  
)
I
D =  
single pulse  
80  
Ts  
=
ºC  
VGE  
=
±15  
V
Tj =  
Tjmax  
Copyright Vincotech  
6
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Inverter Diode Characteristics  
figure 1.  
FWD  
figure 2.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
I F = f(VF)  
Z th(j-s) = f(tp)  
100  
Z
10-1  
10-2  
10-3  
10-4  
10-5  
=
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
tp  
=
250  
μs  
25 °C  
125 °C  
150 °C  
D =  
tp / T  
Tj:  
R th(j-s)  
0,79  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
4,05E-02  
9,02E-02  
3,71E-01  
1,97E-01  
5,23E-02  
3,58E-02  
3,25E+00  
5,38E-01  
8,95E-02  
3,04E-02  
4,59E-03  
6,26E-04  
Thermistor Characteristics  
figure 1.  
Typical NTC characteristic  
Thermistor  
Typical Thermistor resistance values  
as a function of temperature  
R = f(T)  
Copyright Vincotech  
7
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Inverter Switching Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(R g)  
E = f(I C  
)
E
E
25 °C  
With an inductive load at  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
=
600  
±15  
2
V
V
Ω
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
75  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
R goff  
2
figure 3.  
FWD  
figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(R g)  
E
E
With an inductive load at  
25 °C  
With an inductive load at  
25 °C  
VCE  
VGE  
=
=
=
600  
±15  
2
V
V
Ω
Tj:  
VCE  
VGE  
I C  
=
=
=
600  
±15  
75  
V
V
A
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
Copyright Vincotech  
8
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Inverter Switching Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C  
)
t = f(R g)  
t
t
With an inductive load at  
With an inductive load at  
Tj =  
150  
600  
±15  
2
°C  
V
Tj =  
150  
600  
±15  
75  
°C  
VCE  
=
=
=
=
VCE  
=
=
=
V
V
A
VGE  
R gon  
R goff  
V
VGE  
I C  
Ω
Ω
2
figure 7.  
FWD  
figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
trr = f(I C  
)
trr = f(R gon  
)
t
t
25 °C  
At  
VCE  
=
600  
±15  
2
V
V
Ω
At  
VCE  
=
600  
V
V
A
25 °C  
VGE  
=
=
Tj:  
VGE  
I C  
=
±15  
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
75  
Copyright Vincotech  
9
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Inverter Switching Characteristics  
figure 9.  
FWD  
figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recovered charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
25 °C  
At  
VCE  
VGE  
R gon  
=
600  
±15  
2
V
V
Ω
At  
VCE  
VGE  
I C  
=
600  
±15  
75  
V
V
A
25 °C  
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
=
=
figure 11.  
FWD  
figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon)  
I
I
25 °C  
At  
VCE  
=
600  
±15  
2
V
V
Ω
At  
VCE  
VGE  
I C  
=
600  
±15  
75  
V
V
A
25 °C  
VGE  
=
=
Tj:  
=
Tj:  
125 °C  
150 °C  
125 °C  
150 °C  
R gon  
=
Copyright Vincotech  
10  
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Inverter Switching Characteristics  
figure 13.  
FWD  
figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt, di rr/dt = f(I C  
)
di F/dt, di rr/dt = f(R gon)  
diF/dt  
dir r/dt  
diF/dt  
dirr/dt  
t
t
i
i
At  
VCE  
=
600  
±15  
2
V
V
Ω
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
I C  
=
600  
±15  
75  
V
25 °C  
125 °C  
150 °C  
VGE  
=
=
=
V
A
Tj:  
Tj:  
R gon  
=
figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(VCE  
)
I
IC MAX  
I
I
V
At  
Tj =  
125  
°C  
Ω
R gon  
R goff  
=
=
2
2
Ω
Copyright Vincotech  
11  
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Inverter Switching Definitions  
General conditions  
T j  
=
=
=
125 °C  
R gon  
R goff  
2 Ω  
2 Ω  
figure 1.  
IGBT  
figure 2.  
IGBT  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
VGE (0%) =  
-15  
15  
V
VGE (0%) =  
-15  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
15  
V
600  
75  
V
600  
75  
V
A
A
tdoff  
=
233  
ns  
tdon  
=
208  
ns  
figure 3.  
IGBT  
figure 4.  
IGBT  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
IC  
IC  
VCE  
tr  
VCE  
tf  
VC (100%) =  
I C (100%) =  
tf =  
600  
75  
V
VC (100%) =  
I C (100%) =  
600  
75  
V
A
A
113  
ns  
tr  
=
38  
ns  
Copyright Vincotech  
12  
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Inverter Switching Characteristics  
figure 5.  
FWD  
figure 6.  
FWD  
Turn-off Switching Waveforms & definition of trr  
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)  
Qr  
IF  
IF  
fitted  
VF  
VF (100%) =  
I F (100%) =  
I RRM (100%) =  
600  
75  
V
I F (100%) =  
Q r (100%) =  
75  
A
A
13,39  
μC  
77  
A
trr  
=
432  
ns  
Copyright Vincotech  
13  
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 12 mm housing with Press-fit pins  
without thermal paste 12 mm housing with solder pins  
with thermal paste 12 mm housing with Press-fit pins  
with thermal paste 12 mm housing with solder pins  
Ordering Code  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
10-EY126PA075M7-L197F78T-/3/  
10-E2126PA075M7-L197F78Z -/3/  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
NN-NNNNNNNNNNNNNN  
TTTTTTVVWWYY UL  
VIN LLLLL SSSS  
Text  
NN-NNNNNNNNNNNNNN-TTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table  
Pin  
X
Y
3,2  
0
Function  
G16  
32  
1
2
32  
Ph3  
Ph3  
Ph3  
Ph2  
Ph2  
Ph2  
G14  
Ph1  
Ph1  
Press-fit pin  
3
4
28,8  
25,6  
19,2  
16  
0
0
5
0
6
0
7
12,8  
12,8  
6,4  
3,2  
0
8
3,2  
0
9
10  
0
11  
12  
13  
0
0
0
0
3,2  
19,2  
Ph1  
G12  
Therm1  
Solder pin  
14  
15  
16  
17  
18  
19  
20  
21  
22  
0
0
28,8  
44,8  
48  
Therm2  
G11  
0
DC-1  
DC-1  
DC-1  
DC-1  
DC-2  
G13  
3,2  
6,4  
9,6  
12,8  
12,8  
16  
48  
48  
48  
48  
44,8  
48  
DC-2  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
19,2  
22,4  
22,4  
25,6  
28,8  
32  
48  
48  
DC-2  
DC-2  
G15  
44,8  
48  
DC-3  
DC-3  
DC-3  
DC-3  
DC+  
DC+  
DC+  
DC+  
48  
48  
32  
44,8  
25,6  
22,4  
19,2  
16  
12,8  
12,8  
12,8  
12,8  
Copyright Vincotech  
14  
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Pinout  
Identification  
ID  
Component  
Voltage  
Current  
Function  
Comment  
T11, T12, T13, T14,  
T15, T16  
IGBT  
1200 V  
75 A  
Inverter Switch  
D11, D12, D13, D14,  
D15, D16  
FWD  
NTC  
1200 V  
100 A  
Inverter Diode  
Thermistor  
Rt  
Copyright Vincotech  
15  
27 May. 2019 / Revision 5  
10-EY126PA075M7-L197F78T  
10-E2126PA075M7-L197F78Z  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow E2 packages see vincotech.com website.  
Package data  
Package data for flow E2 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-Ex126PA075M7-L197F78x-D5-14  
27 May. 2019  
Outline updated  
14  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
16  
27 May. 2019 / Revision 5  

相关型号：

10-EY126PA075SC-L197F48T

 Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH

10-EY126PA100M7-L198F78T

 Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

10-EY12NMA011ME30-LS28F18T

 High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH

10-EY12NMA016ME-LS28F16T

 High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH

10-EY12PMA015M7-L186A78T

 Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

10-EY12PMA015SC-L186A48T

 Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH

10-EY12PMA025M7-L187A78T

 Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

10-EY12PMA025SC-L187A48T

 Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH

10-EY12PMA035M7-L188A78T

 Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

10-EY12PMA035SC-L188A48T

 Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH

10-EY12PMA050M7-L189A78T

 Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH

10-EY12PNA025M7-L187C78T

 Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
©2020 ICPDF网 联系我们和版权申明