10-EY12NMA016ME-LS28F16T [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;![10-EY12NMA016ME-LS28F16T](http://pdffile.icpdf.com/pdf2/p00358/img/icpdf/10-EY12NMA01_2196349_icpdf.jpg)
型号: | 10-EY12NMA016ME-LS28F16T |
厂家: | ![]() |
描述: | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
文件: | 总23页 (文件大小:8340K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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10-EY12NMA016ME-LS28F16T
datasheet
flowMNPC E2
1200 V / 16 mΩ
Topology features
flow E2 12 mm housing
● Kelvin Emitter for improved switching performance
● Temperature sensor
● Mixed Voltage Neutral Point Clamped Topology (T-Type)
Component features
● High Blocking Voltage with low drain source on state resistance
● High speed SiC-MOSFET technology
● Resistant to Latch-up
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Compact housing
● CTI600 housing material
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Charging Stations
● Power Supply
● Solar Inverters
● UPS
Types
● 10-EY12NMA016ME-LS28F16T
Copyright Vincotech
1
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VDSS
Drain-source voltage
1200
66
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
240
A
Ptot
Total power dissipation
106
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Boost Switch
VDSS
Drain-source voltage
650
78
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
396
A
Ptot
Total power dissipation
148
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9,08
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
2
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Buck Switch
Static
25
11,2
1,8
15,6
20,7
23,1
20,8(1)
rDS(on)
Drain-source on-state resistance
15
80
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
VDS = VGS
0
0,023
25
25
25
2,5
20
3,6
500
38
V
15
0
0
nA
µA
Ω
1200
2
0,85
236
6714
258
16
Qg
-4/15
800
80
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
1000
pF
V
40
4,6
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,9
K/W
Rth(j-s)
25
51,82
42,35
40,49
38,52
33,54
32,69
249,01
283,97
293,29
19,57
21,59
21,93
1,09
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
350
65
tf
125
150
25
ns
QrFWD=0,29 µC
QrFWD=0,355 µC
QrFWD=0,399 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
0,927
0,917
0,936
1,01
mWs
mWs
Eoff
125
150
1,04
Copyright Vincotech
3
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
25
15,3
20,3
22,6
20(1)
rDS(on)
Drain-source on-state resistance
15
52,8
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
VDS = VGS
0
0,01452 25
1,8
2,6
30
3,6
300
96
V
15
0
0
25
25
nA
µA
Ω
650
400
600
3
1
Qg
-4/15
52,8
25
25
25
189
4800
300
24
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 1 Mhz
0
0
0
pF
V
26,4
4,8
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,64
K/W
Rth(j-s)
25
24,19
21,45
21,11
19,52
16,92
16,22
114,39
127,75
131,53
11,21
12,32
12,14
0,618
0,543
0,553
0,605
0,601
0,608
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
350
75
tf
125
150
25
ns
QrFWD=0,392 µC
QrFWD=0,584 µC
QrFWD=0,744 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
4
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
5
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Buck Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
175
175
150
125
100
75
VGS
:
-4 V
-2 V
0 V
150
125
100
75
1 V
3 V
5 V
7 V
50
9 V
11 V
13 V
15 V
17 V
19 V
21 V
25
0
-25
-50
-75
-100
-125
-150
-175
50
25
0
0
1
2
3
4
5
6
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 21 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
70
10
60
50
40
30
20
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,898
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
5,87E-02
1,94E-01
4,24E-01
1,67E-01
5,45E-02
3,51E+00
5,46E-01
1,38E-01
1,40E-02
1,40E-03
Copyright Vincotech
6
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Buck Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
15
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
7
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Boost Switch Characteristics
figure 6.
MOSFET
figure 7.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
175
175
150
125
100
75
VGS
:
-4 V
-2 V
0 V
150
125
100
75
1 V
3 V
5 V
7 V
50
9 V
11 V
13 V
15 V
17 V
19 V
21 V
25
0
-25
-50
-75
-100
-125
-150
-175
50
25
0
0
1
2
3
4
5
6
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 21 V in steps of 2 V
figure 8.
MOSFET
figure 9.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
70
10
60
50
40
30
20
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
0,898
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
5,87E-02
1,94E-01
4,24E-01
1,67E-01
5,45E-02
3,51E+00
5,46E-01
1,38E-01
1,40E-02
1,40E-03
Copyright Vincotech
8
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Boost Switch Characteristics
figure 10.
MOSFET
figure 11.
MOSFET
Safe operating area
Gate voltage vs gate charge
ID = f(VDS
)
VGS = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
5,0
1
2,5
0,0
0,1
0,01
-2,5
-5,0
1
10
100
1000
10000
0
25
50
75
100
125
150
175
200
V
DS(V)
Qg(nC)
D =
ID
=
single pulse
17.6
25
A
Ts =
Tj =
80
15
°C
V
°C
VGS
=
Tj =
Tjmax
Copyright Vincotech
9
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Thermistor Characteristics
figure 12.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
10
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Buck Switching Characteristics
figure 13.
MOSFET
figure 14.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
5
4
3
2
1
0
Eoff
Eoff
Eoff
Eon
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eon
Eon
0
25
50
75
100
125
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
350
0/15
16
V
V
Ω
Ω
125 °C
150 °C
350
0/15
65
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 15.
MOSFET
figure 16.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
350
0/15
16
V
V
Ω
125 °C
150 °C
350
0/15
65
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
11
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Buck Switching Characteristics
figure 17.
MOSFET
figure 18.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
1
10
td(off)
0
10
td(off)
tf
tr
td(on)
-1
10
-1
10
td(on)
tr
-2
10
tf
-2
10
-3
10
0
25
50
75
100
125
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
0/15
16
°C
V
150
350
0/15
65
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
16
figure 19.
MOSFET
figure 20.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
=
=
=
At
350
0/15
16
V
V
Ω
At
350
0/15
65
V
V
A
25 °C
25 °C
VGS
ID
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
12
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Buck Switching Characteristics
figure 21.
MOSFET
figure 22.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
V
Ω
At
350
0/15
65
V
25 °C
25 °C
0/15
16
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
figure 23.
MOSFET
figure 24.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
25
50
75
100
125
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
V
Ω
At
350
0/15
65
V
25 °C
25 °C
0/15
16
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
13
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Buck Switching Characteristics
figure 25.
MOSFET
figure 26.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
4000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
dirr/dt ──────
0
0
25
50
75
100
125
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
350
0/15
16
V
V
Ω
At
350
V
V
A
25 °C
25 °C
VGS
125 °C
150 °C
0/15
65
125 °C
150 °C
Tj:
Tj:
Rgon
figure 27.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
175
ID MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
14
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Boost Switching Characteristics
figure 28.
MOSFET
figure 29.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eon
Eon
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
350
0/15
8
V
V
Ω
Ω
125 °C
150 °C
350
0/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 30.
MOSFET
figure 31.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
350
0/15
8
V
V
Ω
125 °C
150 °C
350
0/15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
15
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Boost Switching Characteristics
figure 32.
MOSFET
figure 33.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
tr
td(on)
tf
td(on)
tr
-2
10
-2
10
tf
-3
10
-3
10
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
0/15
8
°C
V
150
350
0/15
75
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
8
figure 34.
MOSFET
figure 35.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
V
Ω
At
350
0/15
75
V
V
A
25 °C
25 °C
VGS
0/15
8
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
16
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Boost Switching Characteristics
figure 36.
MOSFET
figure 37.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
V
Ω
At
350
0/15
75
V
V
A
25 °C
25 °C
0/15
8
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 38.
MOSFET
figure 39.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
60
50
40
30
20
10
0
125
100
75
50
25
0
IRM
IRM
IRM
IRM
IRM
IRM
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
0/15
8
V
V
Ω
At
350
0/15
75
V
V
A
25 °C
25 °C
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
17
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Boost Switching Characteristics
figure 40.
MOSFET
figure 41.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
8000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
ID(A)
Rgon(Ω)
VDS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
V
Ω
At
350
V
V
A
25 °C
25 °C
VGS
0/15
8
125 °C
150 °C
0/15
75
125 °C
150 °C
Tj:
Tj:
Rgon
figure 42.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
125
ID MAX
100
75
50
25
0
0
100
200
300
400
500
600
700
V
DS(V)
Tj =
At
150
8
°C
Rgon
Rgoff
=
=
Ω
Ω
8
Copyright Vincotech
18
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Switching Definitions
figure 43.
MOSFET
figure 44.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 45.
MOSFET
figure 46.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
19
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Switching Definitions
figure 47.
FWD
figure 48.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 49.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
E
rec
tErec
P
rec
t (µs)
Copyright Vincotech
20
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-EY12NMA016ME-LS28F16T
10-EY12NMA016ME-LS28F16T-/7/
10-EY12NMA016ME-LS28F16T-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
S11
G11
DC+
DC+
DC+
DC+
GND
GND
GND
GND
S14
G14
DC-
DC-
DC-
DC-
S12
G12
Therm1
Therm2
Ph
32
32
3,2
0
3,2
0
2
3
0
4
0
5
3,2
0
3,2
3,2
12,8
12,8
16
6
7
3,2
0
8
9
3,2
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
16
0
28,8
32
0
0
38,4
41,6
44,8
48
0
0
0
19,2
22,4
32
32
32
32
32
32
32
32
16
12,8
16
48
48
48
44,8
38,4
35,2
32
Ph
Ph
19,2
16
Ph
Ph
12,8
19,2
19,2
28,8
Ph
S13
G13
CC
Copyright Vincotech
21
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Pinout
DC+
3,4,5,6
T11
G11
2
S11
1
GND
Ph
7,8,9,10
21,22,23,24,25,26
T14
T13
T12
S14 G14
CC
29
G13 S13
11 12
28
27 G12
18
Rt
S12
17
Therm1
19
Therm2
20
DC-
13,14,15,16
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
T13, T14
Rt
MOSFET
MOSFET
1200 V
650 V
16 mΩ
15 mΩ
Buck Switch
Boost Switch
Thermistor
Thermistor
Copyright Vincotech
22
24 Jan. 2023 / Revision 1
10-EY12NMA016ME-LS28F16T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E2 packages see vincotech.com website.
Package data
Package data for flow E2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-EY12NMA016ME-LS28F16T-D1-14
24 Jan. 2023
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
23
24 Jan. 2023 / Revision 1
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