10-EY12PNA032ME02-L188C03T [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
| 型号： | 10-EY12PNA032ME02-L188C03T |
| 厂家： | 
VINCOTECH |
| 描述： | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
| 文件： | 总18页 (文件大小：6754K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-EY12PNA032ME02-L188C03T
datasheet
flowPIM E2
1200 V / 32 mΩ
Topology features
flow E2 12 mm housing
● Converter+Inverter
● Open Emitter configuration
● SiC MOSFET
● Temperature sensor
Component features
● High Blocking Voltage with low drain source on state resistance
● High speed SiC-MOSFET technology
● Resistant to Latch-up
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Compact housing
● CTI600 housing material
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Embedded Drives
● General Purpose Drives
● Heat Pumps
● HVAC
● Industrial Drives
Types
● 10-EY12PNA032ME02-L188C03T
Copyright Vincotech
1
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VDSS
Drain-source voltage
1200
39
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
120
A
Ptot
Total power dissipation
74
W
-4 / 15
-8 / 19
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
58
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
400
800
68
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
8,97
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
2
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Inverter Switch
Static
25
22,4
1,8
34,2
42,1
46,4
41,6(1)
rDS(on)
Drain-source on-state resistance
15
40
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
0
0,0115
25
25
25
2,5
10
3,6
250
19
V
15
0
0
nA
µA
Ω
1200
1
1,7
118
3357
129
8
Qg
Gate charge
-4/15
800
40
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 100 kHz
0
0
1000
pF
V
20
4,6
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,28
K/W
Copyright Vincotech
3
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Dynamic
25
45,83
40,77
39,74
35,19
30,84
30,3
td(on)
Turn-on delay time
125
150
25
ns
ns
tr
td(off)
tf
Rise time
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
100,65
110,93
113,59
14,82
16
Turn-off delay time
125
150
25
ns
Fall time
125
150
25
ns
16,29
0,891
0,954
1,01
QrFWD=0,208 µC
QrFWD=0,439 µC
QrFWD=0,537 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Peak recovery current
Reverse recovery time
Recovered charge
125
150
25
mWs
mWs
A
0,288
0,287
0,285
8,91
Eoff
-4/15
600
30
125
150
25
IRRM
125
150
25
14,6
17,24
52,58
44,37
45,78
0,208
0,439
0,537
0,045
0,107
0,132
433,16
901,24
1315,15
trr
125
150
25
ns
di/dt=804 A/µs
di/dt=932 A/µs
di/dt=1029 A/µs
Qr
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
4
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
1,09
1,02
1,02
1,5(1)
VF
IR
Forward voltage
35
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
2000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,03
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
25
5
kΩ
%
Deviation of R100
R100 = 499 Ω
100
25
3,2
3,3
Power dissipation
Power dissipation constant
B-value
130
1,3
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
3380
Vincotech Thermistor Reference
V
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
5
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Inverter Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
125
125
100
75
VGS
:
-4 V
-2 V
0 V
100
75
50
25
0
2 V
4 V
50
6 V
8 V
10 V
12 V
14 V
16 V
18 V
20 V
25
0
-25
-50
-75
-100
-125
0
1
2
3
4
5
6
7
8
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
=
tp
=
250
14
μs
V
250
150
μs
°C
25 °C
VGS
Tj =
125 °C
150 °C
Tj:
VGS from -4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
1
70
10
60
50
40
30
20
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
2
4
6
8
10
10
V
GS(V)
tp(s)
tp
=
=
250
10
μs
V
D =
tp / T
1,276
25 °C
VDS
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
6,59E-02
1,80E-01
7,28E-01
2,13E-01
8,96E-02
2,75E+00
3,21E-01
5,55E-02
8,37E-03
1,01E-03
Copyright Vincotech
6
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Inverter Switch Characteristics
figure 5.
MOSFET
Safe operating area
ID = f(VDS
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
DS(V)
D =
single pulse
Ts =
80
14
°C
V
VGS
=
Tj =
Tjmax
Copyright Vincotech
7
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Rectifier Diode Characteristics
figure 6.
Rectifier
figure 7.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
100
75
50
25
0
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,032
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,86E-02
1,31E-01
5,24E-01
1,97E-01
8,14E-02
4,98E-02
5,67E+00
6,68E-01
9,95E-02
3,35E-02
4,54E-03
8,29E-04
Copyright Vincotech
8
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
9
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Inverter Switching Characteristics
figure 9.
MOSFET
figure 10.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
16
V
V
Ω
Ω
125 °C
150 °C
600
-4/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 11.
MOSFET
figure 12.
MOSFET
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
600
-4/15
16
V
V
Ω
125 °C
150 °C
600
-4/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
10
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Inverter Switching Characteristics
figure 13.
MOSFET
figure 14.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tr
td(off)
-1
10
-1
10
tr
td(on)
tf
tf
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
-4/15
16
°C
V
150
600
-4/15
30
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
16
figure 15.
MOSFET
figure 16.
MOSFET
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
=
=
=
At
600
V
V
Ω
At
600
-4/15
30
V
V
A
25 °C
25 °C
VGS
ID
-4/15
16
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
11
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Inverter Switching Characteristics
figure 17.
MOSFET
figure 18.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
16
V
V
Ω
At
600
-4/15
30
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
figure 19.
MOSFET
figure 20.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
25
20
15
10
5
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-4/15
16
V
V
Ω
At
600
-4/15
30
V
25 °C
25 °C
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
12
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Inverter Switching Characteristics
figure 21.
MOSFET
figure 22.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
2250
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2000
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
0
10
20
30
40
50
60
ID(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
VDS
=
=
=
VDS
=
=
=
At
600
V
V
Ω
At
600
-4/15
30
V
V
A
25 °C
25 °C
VGS
VGS
ID
-4/15
16
125 °C
150 °C
125 °C
150 °C
Tj:
Tj:
Rgon
figure 23.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
90
ID MAX
80
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
16
16
Ω
Copyright Vincotech
13
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Inverter Switching Definitions
figure 24.
MOSFET
figure 25.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
MOSFET
figure 27.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
14
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Inverter Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 30.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
Erec
tErec
Prec
3.01
3.1
3.19
3.28
3.37
3.46
t (µs)
Copyright Vincotech
15
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
10-EY12PNA032ME02-L188C03T
10-EY12PNA032ME02-L188C03T-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
ACIn2
25,6
22,4
16
6,4
6,4
9,6
9,6
0
2
ACIn2
3
ACIn1
4
12,8
9,6
9,6
0
ACIn1
5
DC+Rect
DC+Rect
DC-Rect
DC-Rect
6
3,2
0
7
8
0
3,2
9
not assembled
not assembled
22,4
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
0
0
G11
25,6
28,8
32
DC-1
DC-1
G13
0
0
0
35,2
38,4
41,6
44,8
48
DC-2
DC-2
G15
0
0
0
DC-3
DC-3
Therm1
Therm2
G16
0
9,6
19,2
28,8
32
32
32
32
32
32
32
32
32
32
22,4
22,4
48
48
48
48
Ph3
44,8
35,2
32
Ph3
G14
Ph2
28,8
19,2
16
Ph2
G12
Ph1
12,8
3,2
0
Ph1
ACIn3
ACIn3
DC+Inv
DC+Inv
19,2
16
not assembled
Copyright Vincotech
16
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Pinout
DC+Rect
5,6
DC+
33,34
T12
T14
T16
G12
G14
G16
D32
D34
D36
28
25
22
ACIn1
ACIn2
ACIn3
Ph1
29,30
Ph2
26,27
Ph3
23,24
3,4
1,2
31,32
D31
D33
D35
T11
T13
T15
G11
G13
G15
11
14
17
Rt
7,8
12,13
15,16
18,19
20
21
DC-Rect
DC-1
DC-2
DC-3
Therm1
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
MOSFET
1200 V
32 mΩ
Inverter Switch
T15, T16
D31, D32, D33, D34,
D35, D36
Rectifier
1600 V
35 A
Rectifier Diode
Thermistor
Rt
Thermistor
Copyright Vincotech
17
12 Jul. 2022 / Revision 1
10-EY12PNA032ME02-L188C03T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow E2 packages see vincotech.com website.
Package data
Package data for flow E2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-EY12PNA032ME02-L188C03T-D1-14
12 Jul. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
12 Jul. 2022 / Revision 1
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