2N7002-AE3-R [UTC]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR;
| 型号： | 2N7002-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总6页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N7002
Power MOSFET
0.3 Amps, 60 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N7002 has been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product
is particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and
other switching applications
FEATURES
* High Density Cell Design for Low RDS(ON)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
.
* High Saturation Current Capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
3
Lead Free
Halogen Free
1
2
2N7002L-AE2-R
2N7002G-AE2-R
SOT-23-3
S
G
D
Tape Reel
MARKING
3P
G: Halogen Free
L: Lead Free
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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2N7002
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
60
60
Drain-Gate Voltage (RGS ≤1MΩ)
VDGR
V
Continuous
±20
±40
300
Gate Source Voltage
VGSS
ID
V
Non Repetitive(tp<50μs)
Continuous
Drain Current
mA
Pulsed
800
Power Dissipation
200
1.6
mW
mW/°C
°C
PD
Derated Above 25°C
Junction Temperature
Storage Temperature
TJ
+ 150
-55 ~ +150
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
625
UNIT
Junction to Ambient
θJA
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=10μA
60
1
V
VDS=60V, VGS =0V
VGS =20V, VDS=0V
VGS =-20V, VDS=0V
1
μA
nA
nA
IGSSF
IGSSR
100
-100
Gate-Source Leakage Current
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID=250μA
2.1
0.6
2.5
3.75
1.5
V
V
VGS = 10V, ID=500mA
Drain-Source On-Voltage
VDS (ON)
VGS = 5.0V, ID=50mA
0.09
On-State Drain Current
ID(ON)
VGS=10V,VDS≥2VDS(ON)
VGS =10V, ID=500mA
VGS =5.0V, ID=50mA
500 2700
mA
Ω
7.5
7.5
Static Drain-Source On-Resistance
RDS (ON)
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
20
11
4
50
25
5
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
VDD=30V, RL=150Ω
Turn-On Time
tON
ID=200mA, VGS =10V
20
20
nS
nS
RGEN =25Ω
VDD=30V, RL=25Ω
ID=200mA, VGS=10V
Turn-Off Time
tOFF
RGEN =25Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Pulsed Drain-Source Diode
Forward Current
VSD
ISM
VGS=0V, Is=115mA (Note )
0.88
1.5
0.8
V
A
Maximum Continuous Drain-Source
Diode Forward Current
Is
115
mA
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-037,I
2N7002
Power MOSFET
TEST CIRCUIT AND WAVEFORM
VDD
RL
V
IN
VOUT
D
VGS
RGEN
DUT
G
S
Figure 1
ton
toff
(
off
d
)
t
tr
90%
t
f
td (on)
90%
Output, Vout
10%
10%
Inverted
90%
V
in
Input,
50%
50%
10%
Pulse Width
Figure 2. Switching Waveforms
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2N7002
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance Varisation with Drain
Current and Temperature
On-Resistance Varisation with Temperature
3
2
VGS=10V
VGS=10V
ID=500mA
2.5
1.75
1.5
125℃
25℃
TJ =
2
1.25
1
1.5
1
0.5
0
0.75
0.5
-
-
25
0
25
150
0
0.4
1.2
1.6
2
50
50
75 100 125
0.8
Drain Current,ID (A)
Junction Temperature, TJ (°C)
Gate Threshold Varisation with Temperature
Transfer Characteristics
1.1
2
VGS = VDS
ID = 1mA
VDS=10V
25℃
125℃
1.05
1
1.6
8
1.
0.95
0.9
1.2
0.85
0.8
0. 4
0
6
10
25
50
0
2
4
8
-25
0
75 100 125 150
-50
Gate to Source Voltage, VGS (V)
Junction Temperature, TJ (°C)
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2N7002
Power MOSFET
TYPICAL CHARACTERICS (Cont.)
Body Diode Forward Voltage Varisation
with Temperature
Breakdown Voltage Varisation
with Temperature
2
1
1.1
VGS=0V
ID = 250μA
1.075
1.05
0.5
TJ =125℃
25℃
0.1
1.025
1
0.05
0.01
0.975
0.005
0.95
0.001
0.925
1
1.2
1.4
0.8
-50
150
125
75 100
0.2
0.4
0.6
-25
0
25
50
Body Diode Forward Voltage, VSD (V)
Junction Temperature, TJ (°C)
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2N7002
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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