2N7002-HF [COMCHIP]
MOSFET; MOSFET
| 型号： | 2N7002-HF |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | MOSFET |
| 文件： | 总4页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
2N7002-HF (N-Channel)
RoHS Device
Halogen Free
SOT-23
Features
0.119(3.00)
0.110(2.80)
-Power dissipation : 0.35W
D
Equivalent Circuit
0.056(1.40)
0.047(1.20)
D
G
S
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
G : Gate
S : Source
D : Drain
G
0.044(1.10)
0.035(0.90)
0.103(2.60)
0.086(2.20)
S
0.006(0.15)max
0.020(0.50)
0.013(0.35)
Maximum Ratings (at TA=25°C)
0.007(0.20)min
Symbol
Parameter
Value
60
250
Unit
V
mA
mW
°C
Drain-Source voltage
VDS
Dimensions in inches and (millimeter)
Drain current
ID
Power dissipation
PD
350
Junction and storage temperature
TJ, TSTG
-55 ~ +150
Electrical Characteristics (at TA=25°C unless otherwise noted)
Symbol
Parameter
Drain-Source breakdown voltage
Gate-Threshold voltage
Gate-body leakage
Conditions
Min
60
1
Typ
70
Max
Unit
V
VGS=0V, ID=10μA
V(BR)DSS
Vth(GS)
IGSS
VDS=VGS, ID=250μA
VDS=0V, VGS=15V
1.5
2.5
10
1
nA
μA
VDS=60V, VGS=0V
Zero gate voltage drain current
On-state drain current
IDSS
ID(ON)
rDS(ON)
500
VDS=60V, VGS=0V, TJ=125°C
VGS=10V, VDS=7.5V
VGS=4.5V, VDS=10V
VGS=10V, ID=250mA
VGS=4.5V, ID=200mA
VDS=15V, ID=200mA
IS=200mA, VGS=0V
800
500
1300
700
1.5
2.0
300
0.85
0.6
0.06
0.06
25
mA
3
4
Ω
Drain-Source on resistance
mS
V
Forward tran conductance
Diode forward voltage
Total gate charge
gts
VSD
Qg
1.2
1.0
nC
pF
nS
Gate-Source charge
Gate-Drain charge
Qgs
Qgd
Ciss
COSS
CrSS
td(ON)
tr
VDS=30V, VGS=10V, ID=250mA
VDS=25V, VGS=0V, f=1MHz
Input capacitance
Output capacitance
Reverse transfer capacitance
6
1.2
7.5
6
20
20
VDD=30V, RL=200Ω
ID=100mA, VGEN=10V
RG=10Ω
Turn-on time
Turn-off time
7.5
td(off)
REV:B
Page 1
QW-JTR03
Comchip Technology CO., LTD.
MOSFET
RATING AND CHARACTERISTIC CURVES (2N7002-HF)
Fig.1 On-Region Characteristics
Fig.2 On-Resistance vs Drain Current
1.0
0.8
0.6
7
6
O
VGS=10V
9.0V
TJ= 25C
8.0V
7.0V
6.5V
VGS= 5.0V
6.0V
4.5V
5
4
4.0V
5.5V
5.0V
3.5V
3.0V
2.5V
2.0/1.0V
VGS = 10V
3
2
1
0
0.4
0.2
0
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
VDS, Drain-Source Voltage(V)
ID, Drain Current (A)
Fig.3 On-Resistance vs Junction Temperature
Fig.4 On-Resistance vs Gate-Source Voltage
2.0
6
5
1.5
1.0
0.5
0
VGS=10V, ID=0.5A
4
ID = 500mA
VGS=5V, ID=0.05A
3
ID = 50mA
2
1
0
-55
-30
-5
20
45
70
95
120
145
0
2
4
6
8
10
12
14
16
18
TJ, Junction Temperature ( OC)
VGS, Gate to Source Voltage (V)
REV:B
Page 2
QW-JTR03
Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
d
P0
T
P1
E
F
Index hole
W
B
C
P
A
1
2
0
o
D2
D
D1
W1
Trailer
.......
Device
Leader
.......
.......
.......
.......
.......
.......
Start
End
.......
10 pitches (min)
10 pitches (min)
Direction of Feed
1
2
SYMBOL
A
B
C
d
D
D
D
(mm)
3.10 ± 0.10
2.85 ± 0.10
1.40 ± 0.10
1.55 ± 0.10
178 ± 1
50.0 MIN.
13.0 ± 0.20
SOT-23
(inch)
0.122 ± 0.004
0.112 ± 0.004
0.055 ± 0.004
0.061 ± 0.004
7.008 ± 0.04
1.969 MIN.
0.512 ± 0.008
0
1
1
SYMBOL
E
F
P
P
P
W
W
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
8.00 ± 0.30
14.4 MAX.
SOT-23
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002
0.315 ± 0.012
0.567 MAX.
REV:B
Page 3
QW-JTR03
Comchip Technology CO., LTD.
MOSFET
Marking Code
3
Marking Code
7002
Part Number
2N7002-HF
7002
1
2
Suggested PAD Layout
SOT-23
SIZE
A
(mm)
(inch)
A
B
C
0.80
0.031
C D
1.90
2.02
0.075
0.080
D
B
2.82
0.111
Standard Packaging
Qty per Reel
(Pcs)
Reel Size
(inch)
Case Type
SOT-23
3000
7
REV:B
Page 4
QW-JTR03
Comchip Technology CO., LTD.
相关型号：
2N7002/E8
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
VISHAY
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