2N7002-T [NXP]
300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3;
| 型号： | 2N7002-T |
| 厂家： | 
NXP |
| 描述： | 300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 |
| 文件： | 总13页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002
T23
SO
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Suitable for logic level gate drive
Surface-mounted package
Trench MOSFET technology
sources
Very fast switching
1.3 Applications
Logic level translators
High-speed line drivers
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
60
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 150 °C
-
-
-
-
ID
VGS = 10 V; Tsp = 25 °C; see Figure 1;
see Figure 3
300
mA
Ptot
total power dissipation Tsp = 25 °C; see Figure 2
-
-
-
0.83
5
W
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 500 mA; Tj = 25 °C;
see Figure 6; see Figure 8
2.8
Ω
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
3
D
S
2
source
drain
3
G
1
2
mbb076
SOT23 (TO-236AB)
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
2N7002
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
2N7002
Marking code[1]
12%
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
peak gate-source voltage
drain current
25 °C ≤ Tj ≤ 150 °C
-
VDGR
VGS
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
60
V
-30
-40
-
30
V
VGSM
ID
pulsed; tp ≤ 50 µs; δ = 0.25
40
V
VGS = 10 V; Tsp = 25 °C; see Figure 1;
see Figure 3
300
mA
VGS = 10 V; Tsp = 100 °C; see Figure 1
-
-
190
1.2
mA
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tsp = 25 °C; see
Figure 3
Ptot
Tj
total power dissipation
junction temperature
storage temperature
Tsp = 25 °C; see Figure 2
-
0.83
150
150
W
-65
-65
°C
°C
Tstg
Source-drain diode
IS
source current
peak source current
Tsp = 25 °C
-
-
300
1.2
mA
A
ISM
pulsed; tp ≤ 10 µs; Tsp = 25 °C
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
2 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
03aa25
03aa17
120
120
I
P
der
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
(°C)
T
(°C)
sp
sp
Fig 1. Normalized continuous drain current as a
function of solder point temperature
Fig 2. Normalized total power dissipation as a
function of solder point temperature
003aab350
10
ID
(A)
Limit RDSon = VDS / ID
t =
p
10 µs
1
100 µs
10-1
1 ms
DC
10 ms
100 ms
10-2
1
10
102
VDS (V)
Fig 3. Safe operating area; continous and peak drain currents as a function of drain-source voltage
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
3 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance
from junction to
ambient
Mounted on a printed-circuit board;
minimum footprint ; vertical in still air
-
-
350
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
see Figure 4
-
-
150
K/W
003aab351
103
Zth(j-sp)
(K/W)
102
10
1
δ =0.5
0.2
0.1
tp
δ =
P
T
0.05
0.02
single pulse
t
tp
T
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
4 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 10 µA; VGS = 0 V; Tj = 25 °C
ID = 10 µA; VGS = 0 V; Tj = -55 °C
60
55
1
-
-
V
V
V
-
-
VGSth
gate-source threshold ID = 0.25 mA; VDS = VGS; Tj = 25 °C;
2
2.5
voltage
see Figure 9; see Figure 10
ID = 0.25 mA; VDS = VGS; Tj = 150 °C;
see Figure 9; see Figure 10
0.6
-
-
-
-
V
V
ID = 0.25 mA; VDS = VGS; Tj = -55 °C;
see Figure 9; see Figure 10
2.75
IDSS
drain leakage current
gate leakage current
VDS = 48 V; VGS = 0 V; Tj = 25 °C
VDS = 48 V; VGS = 0 V; Tj = 150 °C
VGS = 15 V; VDS = 0 V; Tj = 25 °C
VGS = -15 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.01
-
1
µA
µA
nA
nA
Ω
10
100
100
5
IGSS
10
10
2.8
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 500 mA; Tj = 25 °C;
see Figure 6; see Figure 8
VGS = 10 V; ID = 500 mA; Tj = 150 °C;
see Figure 6; see Figure 8
-
-
-
9.25
5.3
Ω
Ω
VGS = 4.5 V; ID = 75 mA; Tj = 25 °C; see
3.8
Figure 6; see Figure 8
Dynamic characteristics
Ciss
Coss
Crss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
-
-
31
50
30
10
pF
pF
pF
output capacitance
6.8
3.5
reverse transfer
capacitance
ton
toff
turn-on time
turn-off time
VGS = 10 V; VDS = 50 V; RL = 250 Ω;
RG(ext) = 50 Ω; RGS = 50 Ω
-
-
2.5
11
10
15
ns
ns
Source-drain diode
VSD
source-drain voltage
IS = 300 mA; VGS = 0 V; Tj = 25 °C; see
Figure 11
-
0.85
1.5
V
Qr
trr
recovered charge
VGS = 0 V; IS = 300 mA;
dIS/dt = -100 A/µs
-
-
30
30
-
-
nC
ns
reverse recovery time
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
5 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
003aab352
003aab353
1
10000
RDSon
(mΩ)
8000
10
4
VGS (V) =
5
ID
(A)
0.8
0.6
0.4
0.2
0
4.5
4.5
6000
4000
2000
0
4
5
10
VGS (V) = 3.5
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
ID (A)
V
DS (V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
003aab354
03aa28
2.4
1
ID
a
(A)
0.8
0.6
0.4
1.8
1.2
0.6
0
25 °C
Tj = 150 °C
0.2
0
0
2
4
6
−60
0
60
120
180
V
GS (V)
T (°C)
j
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
6 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
003aab101
003aab100
3
10-3
ID
VGS(th)
(V)
max
typ
(A)
2
1
0
10-4
10-5
10-6
min
typ
max
min
-60
0
60
120
180
0
1
2
3
Tj (°C)
VGS (V)
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aab356
003aab357
1
102
IS
(A)
0.8
0.6
0.4
0.2
C
(pF)
Ciss
10
Coss
Crss
Tj = 25 °C
150 °C
0
0.2
1
10-1
0.4
0.6
0.8
1
1
10
102
V
SD (V)
VDS (V)
Fig 11. Source current as a function of source-drain
voltage; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
7 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
8. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
Fig 13. Package outline SOT23 (TO-236AB)
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
8 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
9. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 14. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 15. Wave soldering footprint for SOT23 (TO-236AB)
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
9 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
10. Revision history
Table 8.
Revision history
Document ID
2N7002 v.7
Release date
Data sheet status
Change notice
Supersedes
20110908
Product data sheet
-
2N7002 v.6
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
2N7002 v.6
2N7002 v.5
2N7002 v.4
2N7002 v.3
2N7002 v.2
2N7002 v.1
20060428
20051115
20050426
20000727
19970617
19901031
Product data sheet
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
2N7002 v.5
2N7002 v.4
2N7002 v.3
2N7002 v.2
2N7002 v.1
-
HZG336
-
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
10 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
11. Legal information
11.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
11.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
11.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
11 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
non-automotive qualified products in automotive equipment or applications.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
2N7002
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 7 — 8 September 2011
12 of 13
2N7002
NXP Semiconductors
60 V, 300 mA N-channel Trench MOSFET
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .1
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
11.1
11.2
11.3
11.4
12
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 September 2011
Document identifier: 2N7002
©2020 ICPDF网 联系我们和版权申明