2N3904_09 [UTC]
NPN GENERAL PURPOSE AMPLIFIER; NPN通用放大器
| 型号： | 2N3904_09 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN GENERAL PURPOSE AMPLIFIER |
| 文件： | 总3页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N3904
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
FEATURES
* Collector-Emitter Voltage: VCEO=40V
* Collector Dissipation: PC(MAX)=625mW
* Complementary to 2N3906
Lead-free:
2N3904L
Halogen-free:2N3904G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
2N3904L-T92-B
2N3904L-T92-K
Halogen Free
2N3904G-T92-B
2N3904G-T92-K
1
E
E
2
B
B
3
C
C
2N3904-T92-B
2N3904-T92-K
TO-92
TO-92
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 3
QW-R201-027,C
2N3904
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°С)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
60
40
Collector-Emitter Voltage
Emitter-Base Voltage
V
6
V
Collector Current
200
mA
mW
°С
°С
Collector Dissipation
PC
625
Junction Temperature
Operating and Storage Temperature
TJ
150
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0
Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA,IB=0
MIN TYP MAX UNIT
60
40
6
V
V
Emitter-Base Breakdown Voltage
BVEBO IE=10μA, IC=0
V
VCE(SAT)1 IC=10mA, IB=1mA
VCE(SAT)2 IC=50mA, IB=5mA
VBE(SAT)1 IC=10mA, IB=1mA
VBE(SAT)2 IC=50mA, IB=5mA
0.2
0.3
0.85
0.95
50
V
Collector-Emitter Saturation Voltage (note)
V
0.65
V
Base-Emitter Saturation Voltage (note)
V
Collector Cut-off Current
Base Cut-off Current
ICBO
IBL
VCE=30V, VEB=3V
nA
nA
VCE=30V, VEB=3V
50
hFE1
hFE2
hFE3
hFE4
hFE5
fT
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
40
70
VCE=1V, IC=10mA
100
60
300
DC Current Gain (note)
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, IE=0, f=1MHz
30
Current Gain Bandwidth Product
Output Capacitance
300
MHz
pF
Cob
4
V
CC=3V,VBE=0.5V,IC=10mA,
Turn on Time
tON
70
ns
IB1=1mA
Turn off Time
tOFF
IB1=1B2=1mA
250 ns
Note: Pulse test: Pulse Width≦300μs, Duty Cycle≦2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R201-027,C
www.unisonic.com.tw
2N3904
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
hFE vs. IC
fT vs. IC
240
200
160
1000
500
300
VCE=1V
VCE=20V
120
80
100
50
30
40
0
10
0.1 0.30.51
10 30 50100
3 5
0.1 0.30.51
10 30 50100
3 5
Collector Current, IC (mA)
Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R201-027,C
www.unisonic.com.tw
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