2N3905 [ONSEMI]
General Purpose Transistors(PNP Silicon); 通用晶体管（ PNP硅）
| 型号： | 2N3905 |
| 厂家： | 
ONSEMI |
| 描述： | General Purpose Transistors(PNP Silicon) |
| 文件： | 总6页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by 2N3905/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
3
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
Unit
Vdc
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
V
CEO
V
CBO
V
EBO
40
40
Vdc
5.0
200
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Power Dissipation @ T = 60°C
P
P
250
mW
A
D
Total Device Dissipation @ T = 25°C
1.5
12
Watts
mW/°C
C
D
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
(1)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
R
200
°C/W
JA
Thermal Resistance, Junction to Case
R
83.3
°C/W
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
(2)
Collector–Emitter Breakdown Voltage
(I = 1.0 mAdc, I = 0)
V
V
40
40
5.0
—
—
—
—
50
50
Vdc
Vdc
(BR)CEO
C
B
Collector–Base Breakdown Voltage
(I = 10 Adc, I = 0)
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 10 Adc, I = 0)
V
Vdc
(BR)EBO
E
C
Base Cutoff Current
(V = 30 Vdc, V
I
nAdc
nAdc
BL
= 3.0 Vdc)
= 3.0 Vdc)
EB
CE
Collector Cutoff Current
(V = 30 Vdc, V
EB
I
—
CEX
CE
1. Indicates Data in addition to JEDEC Requirements.
2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
(1)
ON CHARACTERISTICS
DC Current Gain
(I = 0.1 mAdc, V
C
h
FE
—
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
2N3905
2N3906
30
60
—
—
CE
CE
CE
CE
(I = 1.0 mAdc, V
C
2N3905
2N3906
40
80
—
—
(I = 10 mAdc, V
C
2N3905
2N3906
50
100
150
300
(I = 50 mAdc, V
C
2N3905
2N3906
30
60
—
—
(I = 100 mAdc, V
C
= 1.0 Vdc)
CE
2N3905
2N3906
15
30
—
—
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
V
Vdc
Vdc
CE(sat)
—
—
0.25
0.4
C
B
(I = 50 mAdc, I = 5.0 mAdc
C
B
Base–Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
BE(sat)
0.65
—
0.85
0.95
C
C
B
B
(I = 50 mAdc, I = 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 10 mAdc, V
= 20 Vdc, f = 100 MHz)
CE
2N3905
2N3906
200
250
—
—
C
Output Capacitance
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
C
—
4.5
pF
pF
obo
CB
Input Capacitance
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
E
C
—
10.0
ibo
EB
Input Impedance
(I = 1.0 mAdc, V
C
h
k Ω
ie
re
fe
= 10 Vdc, f = 1.0 kHz)
= 10 Vdc, f = 1.0 kHz)
CE
2N3905
2N3906
0.5
2.0
8.0
12
C
CE
–4
X 10
Voltage Feedback Ratio
(I = 1.0 mAdc, V
h
h
2N3905
2N3906
0.1
0.1
5.0
10
C
Small–Signal Current Gain
—
(I = 1.0 mAdc, V
C
= 10 Vdc, f = 1.0 kHz)
2N3905
2N3906
50
100
200
400
CE
CE
CE
Output Admittance
(I = 1.0 mAdc, V
C
h
mhos
dB
oe
= 10 Vdc, f = 1.0 kHz)
2N3905
2N3906
1.0
3.0
40
60
Noise Figure
(I = 100 Adc, V
C
NF
= 5.0 Vdc, R = 1.0 k Ω, f = 1.0 kHz)
2N3905
2N3906
—
—
5.0
4.0
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
—
—
35
35
ns
ns
ns
d
(V
CC
= 3.0 Vdc, V = 0.5 Vdc,
BE
I
= 10 mAdc, I = 1.0 mAdc)
C
B1
Rise Time
t
r
Storage Time
2N3905
2N3906
—
—
200
225
s
(V
CC
B1 B2
= 3.0 Vdc, I = 10 mAdc,
C
Fall Time
t
f
—
—
60
75
ns
I
= I = 1.0 mAd
2N3905
2N3906
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3 V
3 V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
s
C
< 4 pF*
C < 4 pF*
S
S
1N916
10.6 V
300 ns
10 < t < 500
1
t
10.9 V
1
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T
T
= 25°C
= 125°C
J
J
10
5000
V
= 40 V
CC
/I = 10
3000
2000
7.0
I
C B
C
5.0
obo
1000
700
C
ibo
500
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
20 30
50 70 100
200
REVERSE BIAS (VOLTS)
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I
/I = 10
V
= 40 V
C B
CC
= I
300
200
300
200
I
B1 B2
I
/I = 20
C B
100
70
100
70
t @ V
r
= 3.0 V
CC
50
50
15 V
30
20
30
20
I
/I = 10
C B
40 V
10
10
2.0 V
7
5
7
5
t
@ V
= 0 V
OB
d
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50
70 100
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 6. Fall Time
Figure 5. Turn–On Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
= –5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz)
CE
A
5.0
4.0
12
SOURCE RESISTANCE = 200
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
8
I
= 0.5 mA
C
SOURCE RESISTANCE = 200
= 0.5 mA
I
C
3.0
2.0
1.0
0
SOURCE RESISTANCE = 2.0 k
6
4
2
0
I
= 50
A
C
I
= 50 A
C
SOURCE RESISTANCE = 2.0 k
I
= 100
A
C
I
= 100
A
C
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
g
Figure 7.
Figure 8.
h PARAMETERS
(V
= –10 Vdc, f = 1.0 kHz, T = 25°C)
CE
A
300
200
100
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
I , COLLECTOR CURRENT (mA)
C
2.0 3.0
5.0 7.0 10
I
, COLLECTOR CURRENT (mA)
C
Figure 9. Current Gain
Figure 10. Output Admittance
20
10
10
7.0
5.0
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0
, COLLECTOR CURRENT (mA)
C
5.0 7.0 10
I
, COLLECTOR CURRENT (mA)
I
C
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T
= +125°C
J
V
= 1.0 V
CE
+25
°
C
C
0.7
0.5
–55
°
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I
, COLLECTOR CURRENT (mA)
C
Figure 13. DC Current Gain
1.0
0.8
0.6
0.4
T
= 25°C
J
I
= 1.0 mA
10 mA
30 mA
100 mA
C
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I
, BASE CURRENT (mA)
B
Figure 14. Collector Saturation Region
1.0
0.8
0.6
1.0
T
= 25
°C
V
@ I /I = 10
C B
J
BE(sat)
0.5
0
+25°C TO +125°C
FOR V
VC
CE(sat)
V
@ V
= 1.0 V
CE
BE
–55°C TO +25°C
–0.5
–1.0
+25°C TO +125
°C
0.4
–55°C TO +25°C
V
@ I /I = 10
C B
CE(sat)
0.2
0
FOR V
BE(sat)
–1.5
–2.0
VB
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
I , COLLECTOR CURRENT (mA)
C
80
100 120 140
160 180 200
I
, COLLECTOR CURRENT (mA)
C
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 1:
PIN 1. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
2. BASE
3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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2N3905/D
◊
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