2N3905 [FAIRCHILD]
PNP General Purpose Amplifier; PNP通用放大器
| 型号： | 2N3905 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP General Purpose Amplifier |
| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
2N3905
TO-92
C
B
E
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 66. See 2N3906 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
40
40
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N3905
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
200
Rθ
°C/W
JA
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
40
40
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 10 µA, IE = 0
5.0
V
IE = 10 µA, IC = 0
VCE = 30 V, VOB = 3.0 V
VCE = 30 V, VOB = 3.0 V
50
50
nA
nA
IBL
Base Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 0.1 mA
30
40
50
30
15
V
CE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 50 mA
VCE = 1.0 V, IC = 100 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
150
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.25
0.40
0.85
0.95
V
V
V
V
VCE(
)
sat
0.65
VBE(sat)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
VCB = 5.0 V, f = 1.0 MHz
VEB = 0.5 V, f = 1.0 MHz
4.5
10
pF
pF
Cob
Cib
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 20 V,
f = 100 MHz
2.0
Small-Signal Current Gain
Voltage Feedback Ratio
Input Impedance
IC = 1.0 mA, VCE =10 V,
50
0.1
0.5
1.0
200
5.0
8.0
40
hfe
hre
x10 -4
kΩ
f = 1.0 KHz
h
ie
Output Impedance
Noise Figure
µmhos
dB
hoe
NF
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 kΩ,
5.0
BW = 10 Hz to 15.7 KHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VCC = 3.0 V, ICS = 10 mA,
35
35
ns
ns
ns
ns
td
tr
IB1 = 1.0 mA ,VOB ( off ) = 3.0 V
VCC = 3.0 V, ICS = 10 mA,
IB1 = IB2 = 1.0 mA
200
60
ts
tf
*Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2.0%
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