22N60_11 [UTC]
22A, 600V N-CHANNEL POWER MOSFET; 22A ， 600V N沟道功率MOSFET
| 型号： | 22N60_11 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 22A, 600V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
22N60
Power MOSFET
22A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
As the SMPS MOSFET, the UTC 22N60 uses UTC’s
1
advanced technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
TO-247
FEATURES
* RDS(ON) = 0.35Ω
* Ultra Low Gate Charge ( Typical 150 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 36 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-247
Packing
Tube
Lead Free
Halogen Free
22N60G-T47-T
1
2
3
22N60L-T47-T
G
D
S
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R502-216.F
22N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
600
±30
V
Avalanche Current
22
A
Continuous Drain Current
Pulsed Drain Current (Note 1)
ID
22
A
IDM
88
A
Single Pulsed
Repetitive
EAS
380
mJ
mJ
V/ns
W
Avalanche Energy
EAR
37
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
dv/dt
PD
18
370
Junction Temperature
TJ
150
°C
°C
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
40
UNIT
°C /W
°C /W
Junction to Ambient
Junction to Case
θJC
0.34
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-216.F
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22N60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Breakdown Voltage Temperature Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
BVDSS
IDSS
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VDS=0V, VGS=±30V
600
2.0
V
50
µA
IGSS
±100 nA
0.30 V/°C
ΔBVDSS/ΔTJ ID=1mA,Referenced to 25°C
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
4.0
V
VGS=10V, ID=13A (Note 4)
0.26 0.35
Ω
CISS
COSS
CRSS
3570
350
36
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
tR
tD(OFF)
tF
26
99
48
37
ns
ns
ns
ns
Turn-ON Rise Time
VDD=300V, ID=22A, RG=6.2ꢀ
VGS=10V (Note 4)
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
QG
150 nC
V
DS=480V, VGS=10V,
Gate Source Charge
QGS
QGD
45
76
nC
nC
ID=22A (Note 4)
Gate Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Reverse Recovery Time
VSD
IS
VGS=0V, IS=22A
(Note 1)
1.5
22
V
A
ISM
trr
88
A
590 890
ns
µC
IS=22A, di/dt=100A/μs
(Note 4)
Reverse Recovery Charge
QRR
7.2
11
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. TJ = 25°C, L = 1.5mH, RG=25ꢀ, IAS = 22A
3. ISD ≤ 22A, di/dt ≤540A/μs, VDD ≤ V(BR)DSS, TJ ≤150°C.
4. Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-216.F
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22N60
Power MOSFET
TEST CIRCUITS
RD
VDS
VGS
RG
VDD
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
Switching Waveforms
V(BR)DSS
15V
Driver
L
VDS
RG
DUT
IAS
VDD
20V
IAS
tp
tp
0.01Ω
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
QG
10V
QGS
QGD
VGS
Charge
Gate Charge Test Circuit
Gate Charge Waveform
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-216.F
www.unisonic.com.tw
22N60
Power MOSFET
TEST CIRCUITS(Cont.)
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-216.F
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22N60
Power MOSFET
TYPICAL CHARACTERISTICS
Source Current vs.
Drain-Source
Source to Drain Voltage
On-State Resistance Characteristics
12
10
8
12
10
8
VGS=10V,
ID=10A
6
6
4
4
2
2
0
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
0
Source to Drain Voltage, VSD (V)
Drain to Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
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