22NAB12 [ETC]
3-phase bridge rectifier +braking chopper +3-phase bridge inverter; 3相桥式整流器+制动斩波+ 3相桥式逆变器
| 型号： | 22NAB12 |
| 厂家： | 
ETC |
| 描述： | 3-phase bridge rectifier +braking chopper +3-phase bridge inverter |
| 文件： | 总4页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I
Absolute Maximum Ratings
MiniSKiiP 2
SEMIKRON integrated
intelligent Power
Symbol
Conditions 1)
Values
Units
SKiiP 22 NAB 12
SKiiP 22 NAB 12 I 3)
Inverter & Chopper
VCES
VGES
1200
± 20
23 / 15
46 / 30
24 / 17
48 / 34
V
V
A
A
A
A
3-phase bridge rectifier +
braking chopper +
3-phase bridge inverter
IC
ICM
IF = –IC
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
heatsink = 25 / 80 °C
T
IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C
Case M2
Bridge Rectifier
VRRM
1500
25
V
A
ID
Theatsink = 80 °C
IFSM
tp = 10 ms; sin. 180 °, Tj = 25 °C
tp = 10 ms; sin. 180 °, Tj = 25 °C
700
2400
A
I2t
A2s
Tj
Tstg
Visol
– 40 . . . + 150
– 40 . . . + 125
2500
°C
°C
V
AC, 1 min.
Characteristics
Symbol
Conditions 1)
min.
typ.
max. Units
IGBT - Inverter & Chopper
VCEsat
td(on)
tr
td(off)
tf
Eon + Eoff
Cies
Rthjh
IC = 15 A Tj = 25 (125) °C
CC = 600 V; VGE = ± 15 V
–
–
–
–
–
–
–
–
2,5(3,1) 3,0(3,7)
V
ns
ns
ns
ns
mJ
nF
K/W
V
55
45
110
90
IC = 15 A; Tj = 125 °C
Rgon = Rgoff = 82 Ω
inductive load
400
70
4,0
1,0
–
600
100
–
–
1,4
VCE = 25 V; VGE = 0 V, 1 MHz
per IGBT
UL recognized file no. E63532
Diode 2) - Inverter & Chopper
VF = VEC IF = 15 A Tj = 25 (125) °C
• specification of shunts and
temperature sensor see part A
• common characteristics see
page B 16 – 4
–
–
–
–
–
–
–
2,0(1,8) 2,5(2,3)
V
V
mΩ
A
µC
mJ
K/W
VTO
rT
Tj = 125 °C
Tj = 125 °C
1,0
53
16
2,7
0,6
–
1,2
73
–
–
–
IRRM
Qrr
IF = 15 A, VR = – 600 V
diF/dt = – 400 A/µs
1)
Theatsink = 25 °C, unless
Eoff
Rthjh
VGE = 0 V, Tj = 125 °C
per diode
otherwise specified
CAL = Controlled Axial Lifetime
1,7
2)
Diode - Rectifier
Technology (soft and fast
recovery)
With integrated DC and/or AC
VF
Rthjh
IF = 35 A, Tj = 25 °C
per diode
–
–
1,2
–
–
1,6
V
K/W
3)
shunts
Temperature Sensor
4)
accuracy of pure shunt, please
RTS
T = 25 / 100 °C
1000 / 1670
Ω
note that for DC shunt no
separate sensing contact is
used.
Shunts (SKiiP 22 NAB 12 I)
Rcs(dc)
Rcs(ac)
5 % 4)
1 %
16,5
10
mΩ
mΩ
Mechanical Data
case to heatsink, SI Units
2
–
2,5
Nm
M1
Case
mechanical outline see page
B 16 – 8
M2
© by SEMIKRON
000131
B 16 – 53
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C
Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C
22NA1204.xls
22NA1203.xls
5
5
Tj = 125 °C
Tj = 125 °C
mWs
mWs
4
V
V
CE = 600 V
GE = ± 15 V
V
V
CE = 600 V
GE = ± 15 V
Eon
4
3
2
RG = 52 Ω
IC = 15 A
Eon
Eoff
3
2
Eoff
1
1
E
E
0
0
IC
A
RG
Ω
0
50
100
150
0
10
20
30
Fig. 3 Turn-on /-off energy = f (IC)
Fig. 4 Turn-on /-off energy = f (RG)
ICpuls = 15 A
VGE = 0 V
f = 1 MHz
Fig. 5 Typ. gate charge characteristic
B 16 – 54
Fig. 6 Typ. capacitances vs. VCE
000131
© by SEMIKRON
MiniSKiiP 1200 V
I
/ I
C
Cop
1.2
Mini1207
Tj = 150 °C
GE = ≥ 15 V
V
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
[°C]
T
h
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
I
/I
I
/I
Cpuls C
Mini1209
Csc CN
Mini1210
2,5
12
10
8
Tj = ≤ 150 °C
GE = ± 15 V
Tj = ≤ 150 °C
GE = ± 15 V
sc = ≤ 10 µs
ext < 25 nH
V
V
t
L
2
Note:
1,5
1
*Allowed numbers of
short circuit:<1000
*Time between short
circuit:>1s
6
4
0,5
0
2
0
0
500
1000
1500
[V]
0
500
1000
1500
[V]
V
V
CE
CE
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic
B 16 – 4
Fig. 12 Forward characteristic of the input bridge diode
0698 © by SEMIKRON
MiniSKiiP 2
+rect
+B +DC
I+
SKiiP 20 NAB 06 ...
SKiiP 21 NAB 06 ...
SKiiP 20 NAB 12 ...
SKiiP 22 NAB 12 ...
Circuit
Case M2
Layout and connections for the
customer’s printed circuit board
g1
g3
g4
g5
g6
L1
L2
L3
U
B
V
+T
-T
W
gB
g2
Hauptanschluß
Isu
0u
Isw
0w
Isv
0v
power connector
Note: The shunts are available
only by option I
Steueranschluß
control pin
-rect
-DC/A
-DC
-B
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