22N65G-T47-T [UTC]
HEXFET POWER MOSFET; HEXFET功率MOSFET
| 型号： | 22N65G-T47-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | HEXFET POWER MOSFET |
| 文件： | 总5页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
22N65
Preliminary
Power MOSFET
HEXFET POWER MOSFET
DESCRIPTION
As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced
technology to provide excellent RDS(ON), low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
1
TO-247
FEATURES
* RDS(ON) = 350 Ω
* Ultra low gate charge ( Typical 150 nC )
* Low reverse transfer capacitance ( CRSS = typical 36 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-247
Packing
Tube
Lead Free Plating
22N65L-T47-T
Halogen Free
22N65G-T47-T
1
2
3
G
D
S
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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22N65
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
V
V
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current
650
±30
22
A
Continuous Drain Current
Pulsed Drain Current (Note 1)
ID
IDM
22
88
A
A
Single Pulsed
Repetitive
Peak Diode Recovery dv/dt (Note 2)
Power Dissipation
EAS
EAR
dv/dt
PD
380
37
18
370
mJ
mJ
V/ns
W
Avalanche Energy
Junction Temperature
Operating Temperature
Storage Temperature
TJ
TOPR
TSTG
150
-55 ~ +150
-55 ~ +150
°C
°C
°C
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. ISD ≤ 22A, di/dt ≤540 A/μs, VDD ≤ V(BR)DSS, TJ ≤150°C.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
40
UNIT
°C /W
°C /W
Junction to Ambient
Junction to Case
θJC
0.34
ELECTRICAL CHARACTERISTICS
(TJ =25°C, L = 1.5mH, RG=25Ω, IAS = 22A. Unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS
IDSS
VGS=0V, ID=250µA
650
V
VDS=650V, VGS=0V
VDS=0V, VGS=±30V
ID=1mA,
50
µA
IGSS
±100 nA
ΔBVDSS/ΔTJ
0.30
0.3
V/°C
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
2.0
4.0
V
VGS=10V, ID=13A (Note 2)
0.35
Ω
CISS
COSS
CRSS
3570
350
36
pF
pF
pF
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
tR
tD(OFF)
tF
26
99
48
37
ns
ns
Turn-ON Rise Time
VDD=300V, ID=22A, RG=6.2ꢀ
VGS=10V (Note 2)
Turn-OFF Delay Time
ns
Turn-OFF Fall-Time
ns
Total Gate Charge
QG
150
45
nC
nC
nC
V
DS=480V, VGS=10V, ID=22A
Gate Source Charge
QGS
QGD
(Note 2)
Gate Drain Charge
76
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Continuous Source Current
(Body Diode) (Note 1)
VSD
VGS=0V, IS=22A
1.5
22
V
A
IS
Pulsed Source Current (Body Diode)
Reverse Recovery Time
ISM
tRR
88
890
11
A
IS=22A,
di/dt=100A/μs (Note 2)
590
7.2
ns
µC
Reverse Recovery Charge
QRR
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
TEST CIRCUITS
Switching Test Circuit
Switching Waveforms
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VGS
3mA
IG
ID
Charge
Gate Charge Waveform
Gate Charge Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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22N65
Preliminary
Power MOSFET
TEST CIRCUITS(Cont.)
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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22N65
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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