22N20L-TN3-R [UTC]
22A, 200V N-CHANNEL POWER MOSFET; 22A ， 200V N沟道功率MOSFET
| 型号： | 22N20L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 22A, 200V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
22N20
Preliminary
Power MOSFET
22A, 200V N-CHANNEL
POWER MOSFET
1
DESCRIPTION
TO-220
TO-252
The UTC 22N20 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers
with planar stripe and DMOS technology. This technology is
specialized in allowing a minimum on-state resistance and superior
switching performance. It also can withstand high energy pulse in
the avalanche and commutation mode.
The UTC 22N20 is universally applied in low voltage such as
automotive, high efficiency switching for DC/DC converters and DC
motor control.
1
FEATURES
* Fast switching
* RDS(on) = 0.14Ω @VGS = 10 V
* Typically 20nC low gate charge
* 100% avalanche tested
* Typically 25pF Low CRSS
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
22N20L-TA3-T
22N20L-TN3-R
22N20L-TN3-T
22N20G-TA3-T
22N20G-TN3-R
22N20G-TN3-T
TO-220
TO-252
TO-252
G
G
G
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain
S: Source
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QW-R502-611.b
22N20
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
200
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous (TC=25°C)
Pulsed (Note 2)
22
A
Drain Current
IDM
88
A
Avalanche Energy Single Pulsed (Note 3)
EAS
250
mJ
TO-220
192
Power Dissipation (TC=25°C)
Derate above 25°C
W
TO-252
TO-220
TO-252
83
PD
1.53
0.67
+150
-55~+150
W/°C
Junction Temperature
Storage Temperature
TJ
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L =0.85mH, IAS = 21A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220
TO-252
TO-220
TO-252
Junction to Ambient
Junction to Case
θJA
110
0.65
θJC
°C/W
1.5
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
200
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=250µA
0.25
V/°C
V
DS=200V, VGS=0V
VDS=160V, TC=125°C
GS=+30V, VDS=0V
1
Drain-Source Leakage Current
Gate- Source Leakage Current
IDSS
IGSS
µA
10
Forward
Reverse
V
+100 nA
-100 nA
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=11A
3.0
5.0
0.12 0.14
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Ω
CISS
COSS
CRSS
1700 2200 pF
220 290 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
30
40
pF
QG
QGS
QGD
tD(ON)
tR
27
5.8
11.2
35
35
nC
nC
nC
ns
VGS=10V, VDS=160V, ID=22A
(Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
80
300 610 ns
130 270 ns
180 370 ns
VDD=100V, ID=22A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
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22N20
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
22
88
A
A
V
ISM
VSD
IS=22A, VGS=0V
1.5
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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22N20
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
VDS
1
2
BVDSS
BVDSS-VDD
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
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22N20
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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22N20
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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