1N60AL-B-T92-R [UTC]

Transistor;


型号：	1N60AL-B-T92-R
厂家：	Unisonic Technologies
描述：	Transistor
文件：	总8页 (文件大小：213K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

1N60A

Power MOSFET

0.5 Amps, 600/650 Volts

N-CHANNEL MOSFET

DESCRIPTION

The UTC 1N60A is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged avalanche

characteristics. This power MOSFET is usually used at high speed

switching applications in power supplies, PWM motor controls, high

efficient DC to DC converters and bridge circuits.

FEATURES

* R_DS(ON)=15Ω@V_GS= 10V.

* Ultra Low gate charge (typical 8.0nC)

* Low reverse transfer capacitance (C_RSS= 3.0 pF(max))

* Fast switching capability

*Pb-free plating product number: 1N60AL

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Drain

1.Gate

3.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

1N60A-x-T92-B

1N60A-x-T92-K

1N60A-x-T92-R

1N60AL-x-T92-B

1N60AL-x-T92-K

1N60AL-x-T92-R

TO-92

Tape Box

Bulk

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

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1N60A

Power MOSFET

ABSOLUTE MAXIMUM RATINGS(T_C= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

V_DSS

RATINGS

600

650

±30

0.5

UNIT

1N60A-A

1N60A-B

Drain-Source Voltage

Gate-Source Voltage

V_GSS

I_D

T_C= 25℃

Continuous Drain Current

Pulsed Drain Current (Note 1)

Avalanche Energy

T_C= 100℃

0.4

I_DM

E_AS

Single Pulse(Note 2)

Repetitive(Note 1)

E_AR

3.6

4.0

V/ns

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

T_C=25℃

Total Power Dissipation

P_D

Derate above 25°C

mW/℃

℃

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

T_OPR

T_STG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATING

120

UNIT

℃/W

Junction-to-Ambient

θ_JA

ELECTRICAL CHARACTERISTICS (T_J=25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

1N60A-A

1N60A-B

600

650

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 600V, V_GS= 0V

V_GS= 20V, V_DS= 0V

µA

Forward

Reverse

100

I_GSS

V_GS= -20V, V_DS= 0V

-100 nA

Breakdown Voltage Temperature

Coefficient

I_D= 250µA, referenced to 25℃

△BV_DSS/△T_J

0.4

V/℃

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250µA

V_GS= 10V, I_D= 0.5A

2.0

4.2

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

Ω

C_ISS

C_OSS

C_RSS

100

V_DS=25V, V_GS=0V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_{D (ON)}

t_R

t_{D (OFF)}

t_F

Turn-On Rise Time

V_DD=300V, I_D=0.5A, R_G=5Ω

(Note 4,5)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

V_DS=480V, V_GS=10V, I_D=0.8A

Gate-Source Charge

Q_GS

Q_GD

1.8

4.0

(Note 4,5)

Gate-Drain Charge

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1N60A

Power MOSFET

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

I_S

V_GS=0V, I_SD= 1.2A

1.6

1.2

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

4.8

Reverse Recovery Time

t_RR

_GS=0V, I_SD= 1.2A

136

0.3

di/dt = 100A/µs

Reverse Recovery Charge

Q_RR

µC

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=92mH, I_AS=0.8A, V_DD=50V, R_G=0Ω, Starting T_J=25℃

3. I_SD≤1.0A, di/dt≤100A/µs, V_DD≤BV_DSS, Starting T_J=25℃

4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤2%

5. Essentially independent of operating temperature.

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1N60A

Power MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

* I_SDcontrolled by pulse period

* D.U.T.-Device Under Test

Same Type

as D.U.T.

V_GS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

P. W.

V_GS

(Driver)

Period

P.W.

Period

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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1N60A

Power MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

V_DS

BV_DSS

I_AS

R_D

V_DD

I_D(t)

V_DS(t)

V_DD

10V

D.U.T.

t_p

Time

t_p

Fig. 4A Unclamped Inductive Switching Test Circuit

Fig. 4B Unclamped Inductive Switching Waveforms

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1N60A

Power MOSFET

TYPICAL CHARACTERISTICS

Output Characteristics

Transfer Characteristics

V_GS

Top: 15.0V

10.0V

V_DS=50V

250μs Pulse Test

8.0V

7.0V

6.0V

5.5V

10⁰

4.5V

Bottorm:4.5V

10⁰

150℃

25℃

250μs Pulse Test

T_C=25℃

10^-1

10¹

10⁰

Gate-Source Voltage, V_GS(V)

Drain-Source Voltage, V_DS(V)

On-Resistance vs. Drain Current

TJ=25℃

Source- Drain Diode Forward Voltage

V_GS=0V

250μs Pulse Test

V_GS=10V

V_GS=20V

10⁰

25℃

150℃

10^-1

1.5

2.5

0.0

1.0

2.0

0.5

0.2 0.4

0.6

0.8

1.0

1.2

1.4

1.6

Drain Current, I_D(A)

Source-Drain Voltage, V_SD(V)

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1N60A

Power MOSFET

TYPICAL CHARACTERISTICS (Cont.)

Thermal Response

0.5

10⁰

θ_JC(t) = 3.45℃/W Max.

Duty Factor, D=t1/t2

T_JM-T_C=P_DM×θ_JC(t)

0.2

0.1

10^-1

Single pulse

10^-5

10⁰

Square Wave Pulse Duration, t₁(sec)

10¹

10^-4

10^-3

10^-2

10^-1

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1N60A

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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1N60AL-B-T92-R [UTC]

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