1N60AL-T92-R [UTC]
Transistor;
| 型号： | 1N60AL-T92-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总8页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N60A
Power MOSFET
0.5 Amps, 600 Volts
N-CHANNEL MOSFET
ꢀ
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to
1
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
TO-92
ꢀ
FEATURES
* RDS(ON) =11Ω@VGS = 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
*Pb-free plating product number: 1N60AL
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
ꢀ
SYMBOL
2.Drain
1.Gate
3.Source
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
2
D
D
D
3
S
S
S
1N60A-T92-B
1N60A-T92-K
1N60A-T92-R
1N60AL-T92-B
1N60AL-T92-K
1N60AL-T92-R
TO-92
TO-92
TO-92
Tape Box
Bulk
G
G
G
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
1N60AL-T92-B
(1)Packing Type
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) T92: TO-92
(2)Package Type
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
QW-R502-091,B
1N60A
Power MOSFET
ꢀ
ABSOLUTE MAXIMUM RATINGS(TC = 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
600
±30
0.5
0.4
2
VGSS
V
TC = 25℃
Continuous Drain Current
ID
A
TC = 100℃
Drain Current-Pulsed (Note 2)
Avalanche Energy
IDP
EAR
EAS
A
mJ
Repetitive(Note 1)
3.6
4.0
Single Pulse(Note 2)
50
4.5
3
mJ
Peak Diode Recovery dv/dt (Note 4)
Total Power Dissipation
dv/dt
V/ns
W
TC=25℃
PD
Derate above 25°C
25
mW/℃
℃
Operation Junction Temperature
Storage Temperature
TJ
-55 ~ +150
-55 ~ +150
TSTG
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
THERMAL DATA
PARAMETER
SYMBOL
θJA
MIN
TYP
0.5
MAX
120
UNIT
Thermal Resistance Junction-Ambient
Thermal Resistance Case-Sink
℃/W
θCS
ꢀ
ELECTRICAL CHARACTERISTICS (TJ =25℃, Unless Otherwise Specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS VGS = 0V, ID = 250µA
600
V
△BVDSS
△TJ
/
ID = 250µA, referenced to 25℃
0.4
V/℃
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125℃
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
IGSS
1
µA
Forward
Reverse
10
µA
µA
-10
On Characteristics
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250µA
RDS(ON) VGS = 10V, ID = 0.5A
2.0
4.0
15
V
Static Drain-Source On-Resistance
Dynamic Characteristics
Input Capacitance
11
Ω
CISS
100
20
3
pF
pF
pF
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
COSS
CRSS
tD (ON)
tR
tD (OFF)
tF
12
11
40
18
8
34
32
90
46
10
ns
ns
VDD=300V, ID=0.5A, RG=5Ω
(Note 4,5)
Turn-Off Delay Time
Fall Time
ns
ns
Total Gate Charge
QG
nC
nC
nC
V
DS=480V, VGS=10V, ID=0.8A
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
1.8
4.0
(Note 4,5)
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1N60A
Power MOSFET
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
VSD
ISD
VGS=0V, IS = 0.8A,
1.6
1.2
4.8
V
A
ISM
A
tRR
VGS=0V, IS = 0.8A
136
0.3
ns
µC
di/dt = 100A/µs
Reverse Recovery Charge
QRR
Note: 1. Repeativity rating: pulse width limited by junction temperature
2. L=92mH, IAS=1.0A, VDD=50V, RG=0Ω, Starting TJ=25℃
3. ISD≤1.0A, di/dt≤100A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
5. Essentially independent of operating temperature.
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1N60A
Power MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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1N60A
Power MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON )
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤0.1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
1mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RG
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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1N60A
Power MOSFET
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS
Output Characteristics
Transfer Characteristics
V
GS
VDS=50V
250μs Pulse Test
Top: 15.0V
10 .0V
8 .0V
100
7 .0V
6 .0V
4.5V
5.5V
5V
100
Bottorm :4.5V
150℃
25℃
250μs Pulse Test
TC=25℃
10-1
10-1
101
100
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)
Source- Drain Diode Forward Voltage
On-Resistance vs. Drain Current
30
TJ=25℃
VGS=0V
250μs Pulse Test
25
20
VGS=10V
VGS=20V
100
15
25℃
10
5
150℃
10-1
0
0.0
1.0
1.5
2.0
2.5
0.5
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain Current, ID (A)
Source-Drain Voltage, VSD (V)
Gate Charge vs. Gate-Source Voltage
Capacitance vs. Drain-Source Voltage
200
150
12
CISS=CGS+CGD
(CDS=shorted)
VDS=480V
C
OSS=CDS+CGD
10
CISS
VDS=300V
VDS=120V
CRSS=CGD
8
6
4
COSS
100
50
0
CRSS
2
0
VGS=0V
f = 1MHz
10-1
ID=1.0A
8 10
100
101
0
4
6
2
Drain-SourceVoltage, VDS (V)
Total Gate Charge, QG (nC)
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1N60A
Power MOSFET
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
On-Resistance vs. Temperature
Breakdown Voltage vs. Temperature
3.
0
2.
5
2.
0
1.
2
VGS=10V
ID=0.5A
VGS=0V
ID=250μA
1.
1
1.
0
1.
5
1.
0
0.
9
0.
5
0.
0
0.
8
200
-100 -50
0
50
100 150 200
-100 -50
0
50
100 150
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
Max. Drain Current vs. Case Temperature
Max. Safe Operating Area
1.0
Operation in This
Area is Limited by
RDS(on)
101
100μs
1m
100
10ms
0.5
10-
1
Tc=25℃
TJ=150℃
Single Pulse
100
10-
0.
0
101
102
103
25
50
Case Temperature, TC (℃)
75
100
125
2
150
Drain-Source Voltage, VDS (V)
Thermal Response
0.5
100
θJC (t) = 3.45℃/W Max.
Duty Factor, D=t1/t2
TJM-TC=PDM×θJC (t)
0.2
0.1
5
0
.
0
2
0
.
0
10-1
1
0
.
0
Single pulse
10-4 10-3
10-5
100
Square Wave Pulse Duration, t1 (sec)
101
10-2
10-1
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1N60A
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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