1N60AL-T92 [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 1N60AL-T92 |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总7页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N60A
Power MOSFET
0.5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) <15Ω@VGS = 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
1N60AL-AA3-R
Halogen Free
1
2
D
D
D
D
D
3
1N60AG-AA3-R
1N60AG-TM3-T
1N60AG-TN3-R
1N60AG-T92-B
1N60AG-T92-K
SOT-223
TO-251
TO-252
TO-92
G
G
G
G
G
S
S
S
S
S
Tape Reel
Tube
1N60AL-TM3-T
1N60AL-TN3-R
Tape Reel
Tape Box
Bulk
1N60AL-T92-B
1N60AL-T92-K
TO-92
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R502-091.K
1N60A
Power MOSFET
MARKING INFORMATION
PACKAGE
MARKING
L: Lead Free
1N60A
1
G: Halogen Free
SOT-223
Data Code
TO-251
TO-252
TO-92
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1N60A
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Continuous Drain Current
Pulsed Drain Current (Note 2)
0.5
A
IDM
2
A
Single Pulse(Note 3)
Repetitive(Note 2)
EAS
50
mJ
mJ
V/ns
Avalanche Energy
EAR
3.6
Peak Diode Recovery dv/dt (Note 4)
SOT-223
dv/dt
4.5
6.25
34
Power Dissipation (TC=25°C) TO-251/TO-252
W
TO-92
3
PD
SOT-223
0.05
0.27
0.025
+150
-55 ~ +150
-55 ~ +150
Derate above 25°C
TO-251/TO-252
TO-92
W/°C
Junction Temperature
Operating Temperature
Storage Temperature
TJ
°C
°C
°C
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C
4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SOT-223
SYMBOL
RATINGS
UNIT
°C/W
150
110
160
20
Junction to Ambient
TO-251/TO-252
TO-92
θJA
SOT-223
Junction to Case
TO-251/TO-252
TO-92
θJC
5
°C/W
80
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1N60A
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current (TJ =25°C)
Drain-Source Leakage Current (TJ =125°C)
BVDSS
IDSS
VGS = 0V, ID = 250μA
600
V
10
10
VDS = 600V, VGS = 0V
μA
Forward
Gate-Source Leakage Current
Reverse
V
GS = 30V, VDS = 0V
100 nA
-100 nA
IGSS
VGS = -30V, VDS = 0V
ID = 250μA
referenced to 25°C
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
0.4
11
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.5
15
V
VGS = 10V, ID = 0.5A
Ω
CISS
COSS
CRSS
100
20
3
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
tR
tD (OFF)
tF
12
11
40
18
8
34
32
90
46
10
ns
ns
Turn-On Rise Time
VDD=300V, ID=0.5A, RG=5Ω
(Note 1,2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS=480V, VGS=10V, ID=0.8A
Gate-Source Charge
QGS
QGD
1.8
4.0
(Note 1,2)
Gate-Drain Charge
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, ISD = 1.2A
1.6
1.2
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
4.8
A
Reverse Recovery Time
tRR
136
0.3
ns
VGS=0V, ISD = 1.2A
di/dt = 100A/μs
Reverse Recovery Charge
QRR
μC
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
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1N60A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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1N60A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON)
tD(OFF)
Pulse Width≤ 1μs
Duty Factor≤0.1%
tF
tR
Switching Test Circuit
Switching Waveforms
QG
Same Type
as D.U.T.
10V
50kΩ
12V
0.3μF
0.2μF
QGS
QGD
VDS
VGS
DUT
VGS
1mA
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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1N60A
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
100 200 300 400 500 600 700 800
0
0.5
Gate Threshold Voltage, VTH (V)
1
1.5
2
2.5
3
3.5
4
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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