UTD408L-TN3-R [UTC]
N-CHANNEL ENHANCEMENT MODE; N沟道增强模式
| 型号： | UTD408L-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总5页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTD408
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
FEATURES
* RDS(ON) = 18mΩ @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
*Pb-free plating product number: UTD408L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
3
S
S
UTD408-TN3-R
UTD408-TN3-T
UTD408L-TN3-R
UTD408L-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
www.unisonic.com.tw
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R502-184.A
UTD408
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
30
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
18
V
Continuous Drain Current (TC=25°C)
Pulsed Drain Current
A
IDM
40
A
Avalanche Current
IAR
18
A
Repetitive Avalanche Energy (L=0.1mH)
Power Dissipation (TC=25°C)
Junction Temperature
EAR
PD
40
mJ
W
°C
60
TJ
+175
Strong Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
40
MAX
50
UNIT
°C/W
Junction-to-Ambient
θJA
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS =0 V, ID =250µA
30
V
VDS =24V, VGS =0 V
VDS =0 V, VGS = ±20V
1
µA
nA
IGSS
100
VGS(TH)
ID(ON)
VDS =VGS, ID =250 µA
VDS =5V, VGS =4.5V
VGS =10V, ID =18A
1
1.8
2.5
V
On State Drain Current
40
A
13.6
20.6
18
27
mΩ
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS =4.5V, ID =10A
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1040 1250
180
V
DS =15 V, VGS =0V, f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
110
tD(ON)
tR
tD(OFF)
tF
4.5
3.9
VGS=10V,VDS=15V,RL=0.82ꢀ,
GEN =3ꢀ
ns
R
Turn-OFF Delay Time
Turn-OFF Fall-Time
17.4
3.2
Total Gate Charge
QG
19.8
2.5
25
VDS =15V, VGS =10V, ID =18A
nC
Gate Source Charge
Gate Drain Charge
QGS
QGD
3.5
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
IS=1A,VGS=0V
0.75
1
V
A
18
IS
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery
Charge
tRR
QRR
IF=18 A, dI/dt=100A/µs
IF=18 A, dI/dt=100A/µs
19
8
25
ns
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 5
QW-R502-184.A
www.unisonic.com.tw
UTD408
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance vs. Drain Current
and Gate Voltage
On-Resistance vs. Junction
Temperature
24
22
20
18
16
14
12
10
1.6
1.4
ID=18A
VGS=4.5V
VGS=10V
VGS=4.5V
1.2
1
VGS=10V
0.8
0
5
10
15
20
0
25 50 75 100 125 150 175
Junction Temperature (℃)
Drain Current,ID (A)
On-Resistance vs. Gate-Source Voltage
ID=18A
Body-Diode Characteristics
50
40
30
20
10
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125℃
25℃
125℃
25℃
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
Gate to Source Voltage,VGS (V)
Body Diode Forward Voltage,VSD (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-184.A
www.unisonic.com.tw
UTD408
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-184.A
www.unisonic.com.tw
UTD408
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-184.A
www.unisonic.com.tw
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