UTD413 [UTC]
P-CHANNEL ENHANCEMENT MODE; P沟道增强模式
| 型号： | UTD413 |
| 厂家： | 
Unisonic Technologies |
| 描述： | P-CHANNEL ENHANCEMENT MODE |
| 文件： | 总4页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTD413
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTD413 can provide excellent RDS(ON) and low gate charge
by using UTC’s advanced trench technology. The UTD413 is well
suited for high current load applications with the excellent thermal
resistance of the TO-252 package. Standard Product UTD413 is
Pb-free.
FEATURES
* RDS(ON) < 45mΩ @VGS = -10V
* RDS(ON) < 69mΩ @VGS = -4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
3
S
S
UTD413L-TN3-R
UTD413L-TN3-T
UTD413G-TN3-R
UTD413G-TN3-T
TO-252
TO-252
G
G
Tape Reel
Tube
www.unisonic.com.tw
1 of 4
Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-246.C
UTD413
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-40
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
±20
V
-12
A
IDM
-30
A
IAR
-12
A
Repetitive avalanche energy L=0.1mH
Power Dissipation
EAR
PD
30
mJ
W
℃
℃
2.5
Junction Temperature
Storage Temperature
TJ
+175
-55 ~ +175
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
℃/W
℃/W
Junction to Ambient
Junction to Case
50
3
θJC
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=-10mA
-40
V
VDS=-32V, VGS=0V
VDS=0V, VGS=±20V
-1
µA
IGSS
±100 nA
VGS(TH)
ID(ON)
VDS=VGS, ID=-250µA
VDS=-5V, VGS=-10V
-1
-1.9
-3
V
A
On State Drain Current
-30
V
GS=-10V, ID=-12A
36
51
45
69
Static Drain-Source On-Resistance
RDS(ON)
mΩ
VGS=-4.5V, ID=-8 A
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
657
143
63
pF
pF
pF
Output Capacitance
VDS=-20V, VGS =0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
10V
14.1
7
Total Gate Charge
QG
nC
4.5V
VDS=-20V, VGS=-10V,
ID =-12A
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QGS
QGD
tD(ON)
tR
2.2
4.1
8
nC
nC
ns
ns
ns
ns
12.2
24
VGS=-10V, VDS=-20V,
RL=1.7ꢀ, RG=3ꢀ
tD(OFF)
tF
12.5
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS
IS=-1A, VGS=0V
-0.75
-1
V
A
Maximum Body-Diode Continuous Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
-12
tRR
QRR
IF=-12A, dI/dt=100A/μs
IF=-12A, dI/dt=100A/μs
23.2
18.2
ns
nC
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R502-246.C
www.unisonic.com.tw
UTD413
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs.
Drain-Source Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
450
400
350
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
0
30
40
50
0.5
10
20
1.0
1.5
2.0
2.5
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS(V)
Drain-Source
Drain-Source
On-State Resistance Characteristics
On-State Resistance Characteristics
14
12
1.4
1.2
ID=-12A
VGS=-10V
ID=-1A
VGS=-10V
10
8
1.0
0.8
0.6
0.4
0.2
ID=-8A
VGS=-4.5V
ID=-1A
VGS=-4.5V
6
4
2
0
0
0
50
200
400
600
0
Drain to Source Voltage, VDS (mV)
Drain to Source Voltage, VDS (mV)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R502-246.C
www.unisonic.com.tw
UTD413
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R502-246.C
www.unisonic.com.tw
相关型号：
UTD413-TN3-R
Power Field-Effect Transistor, 12A I(D), 40V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
UTC
UTD413-TN3-T
Power Field-Effect Transistor, 12A I(D), 40V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明