UTD413L-S08-R [UTC]
Small Signal Field-Effect Transistor,;
| 型号： | UTD413L-S08-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTD413
Power MOSFET
P-CHANNEL
ENHANCEMENT MODE
1
1
DESCRIPTION
TO-252
TO-252D
The UTD413 can provide excellent RDS(ON) and low gate charge
by using UTC’s advanced trench technology. The UTD413 is well
suited for high current load applications with the excellent thermal
resistance of the TO-252 package. Standard Product UTD413 is
Pb-free.
FEATURES
1
* RDS(ON) ≤ 45 mΩ @ VGS=-10V, ID= -12A
* RDS(ON) ≤ 69 mΩ @ VGS=-4.5V, ID= -8.0A
* Low capacitance
SOP-8
SOT-223
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
UTD413G-AA3-R
UTD413G-TN3-R
UTD413G-TND-R
UTD413G-S08-R
1
2
D
D
D
S
3
S
S
S
S
4
-
5
-
6
-
7
-
8
-
UTD413L-AA3-R
UTD413L-TN3-R
UTD413L-TND-R
UTD413L-S08-R
SOT-223
TO-252
G
G
G
S
Tape Reel
Tape Reel
Tape Reel
Tape Reel
-
-
-
-
-
TO-252D
SOP-8
-
-
-
-
-
G
D
D
D
D
Note: Pin Assignment: G: Gate
D: Drain
S: Source
UTD413G-AA3-R
(1) R: Tape Reel
(1)Packing Type
(2)Package Type
(2) AA3: SOT-223, TN3: TO-252, TND: TO-252D
S08: SOP-8
(3)Green Package
(3) G: Halogen Free and Lead Free, L: Lead Free
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UTD413
Power MOSFET
MARKING
PACKAGE
MARKING
L: Lead Free
UTD413
G: Halogen Free
SOT-223
Date Code
1
UTC
UTD413
L: Lead Free
G: Halogen Free
TO-252
TO-252D
Lot Code
Date Code
1
8
7
6
5
Date Code
UTC
UTD413
L: Lead Free
G: Halogen Free
Lot Code
SOP-8
2
1
3
4
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UTD413
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
-40
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
±20
V
-12
A
IDM
-30
A
IAR
-12
A
Repetitive avalanche energy L=0.1mH
SOT-223
EAR
30
mJ
W
W
W
°C
°C
2.4
Power Dissipation
TO-252/TO-252D
SOP-8
PD
46
1.7
Junction Temperature
Storage Temperature
TJ
+175
-55 ~ +175
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
SOT-223
140
50
Junction to Ambient
Junction to Case
TO-252/TO-252D
SOP-8
θJA
90
SOT-223
52
TO-252/TO-252D
SOP-8
θJC
2.7
73
Note: When surface mounted to an FR4 board using minimum recommended pad size. (Cu. Area 0.412 sq in),
Steady State.
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UTD413
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V, ID=-10mA
-40
V
VDS=-32V, VGS=0V
VDS=0V, VGS=±20V
-1
µA
IGSS
±100 nA
VGS(TH)
ID(ON)
VDS=VGS, ID=-250µA
VDS=-5V, VGS=-10V
VGS=-10V, ID=-12A
VGS=-4.5V, ID=-8 A
-1
-1.9
-3
V
A
On State Drain Current
-30
36
51
45
69
Static Drain-Source On-Resistance
RDS(ON)
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
657
143
63
pF
pF
pF
Output Capacitance
VDS=-20V, VGS =0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
10V
4.5V
14.1
7
Total Gate Charge
QG
nC
VDS=-20V, VGS=-10V,
ID =-12A
Gate Source Charge
Gate Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
QGS
QGD
tD(ON)
tR
2.2
4.1
8
nC
nC
ns
ns
ns
ns
12.2
24
VGS=-10V, VDS=-20V,
RL=1.7Ω, RG=3Ω
tD(OFF)
tF
12.5
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS
IS=-12A, VGS=0V
-0.75 -1.2
-12
V
A
Maximum Body-Diode Continuous Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
IF=-12A, dI/dt=100A/μs
IF=-12A, dI/dt=100A/μs
23.2
ns
nC
Qrr
18.2
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UTD413
Power MOSFET
TYPICAL CHARACTERISTICS
Body-Diode Continuous Current vs.
Source to Drain Voltage
Switching Time Waveforms
14
12
10
0
10%
10%
VDS
VGS
90%
10%
90%
8
6
0
4
90%
tTHL
tTLH
2
0
tD(ON)
tD(OFF)
0
0.4
0.2
0.6
0.8
1.2
1.4
Source to Drain Voltage, -VSD (V)
Drain Current vs.
Drain-Source Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
200
150
100
450
400
350
300
250
200
150
100
50
50
0
0
0
0
0.5
30
40
50
10
20
1.0
1.5
2.0
2.5
Drain-Source Breakdown Voltage, -BVDSS(V)
Gate Threshold Voltage, -VTH (V)
Drain-Source
Drain-Source
On-State Resistance Characteristics
On-State Resistance Characteristics
14
12
1.4
1.2
ID=-12A
VGS=-10V
ID=-1A
VGS=-10V
10
8
1.0
0.8
0.6
0.4
0.2
ID=-8A
VGS=-4.5V
ID=-1A
VGS=-4.5V
6
4
2
0
0
0
50
200
400
600
0
Drain to Source Voltage, -VDS (mV)
Drain to Source Voltage, -VDS (mV)
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UTD413
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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