UTD410G-TN3-T [UTC]
N-CHANNEL ENHANCEMENT MODE;
| 型号： | UTD410G-TN3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE |
| 文件： | 总5页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UTD410
Power MOSFET
N-CHANNEL
ENHANCEMENT MODE
1
DESCRIPTION
SOT-223
The UTD410 can provide excellent RDS(ON) and low gate
charge by using advanced trench technology. This UTD410 is
suitable for using as a load switch or in PWM applications.
FEATURES
1
* VDS=30V, ID=8A
* RDS(ON) =48mΩ @VGS =10V
TO-252
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
2 3
Package
Packing
Lead Free
Halogen Free
1
UTD410L-TN3-R
UTD410L-TN3-T
UTD410L-AA3-R
UTD410G-TN3-R
UTD410G-TN3-T
UTD410G-AA3-R
TO-252
TO-252
SOT-223
G
G
G
D
D
D
S
S
S
Tape Reel
Tube
Tape Reel
www.unisonic.com.tw
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Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R502-142.B
UTD410
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
30
Gate-Source Voltage
±20
Continuous Drain Current
8
A
mJ
W
Pulsed Drain Current (Note1)
Repetitive Avalanche Energy (L=0.1mH Note1)
IDM
20
10
EAR
TO-252
Power Dissipation (TC=25°C)
SOT-223
2
PD
2.3
Junction Temperature
Storage Temperature
TJ
+175
-55 ~ +175
°C
°C
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
46
MAX
60
UNIT
°C/W
°C/W
TO-252
Junction-to-Ambient (TC=25°C)
θJA
SOT-223
55
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS =0 V, ID =250µA
30
V
VDS =24V,VGS =0V
1
µA
IGSS
VDS =0 V, VGS = ±20V
±100 nA
Gate-Threshold Voltage
VGS(TH)
RDS(ON)
VDS =VGS, ID =250µA
VGS=10V, ID =8A
VGS=4.5V, ID =2A
1
1.8
48
75
3
V
65
Drain-Source On-State Resistance
mꢀ
105
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
288
57
pF
pF
pF
Output Capacitance
V
DS =15 V, VGS =0V, f=1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
39
tD(ON)
tR
tD(OFF)
tF
3.7
3.7
ns
ns
Turn-On Rise Time
VGS=10V,VDD=15V, RL=1.8ꢀ,
RG=3ꢀ
Turn-Off Delay Time
15.6
2.6
ns
Turn-Off Fall-Time
ns
Total Gate Charge
QG
6.72
0.76
1.78
nC
nC
nC
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
VGS=10V, VDS=15V, ID=8A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source
Diode Forward Current
VSD
VGS=0V, IS=1A
0.75
1
V
A
IS
4.3
Reverse Recovery Time
tRR
12.6
5.1
ns
IF=8A, dIF/dt=100A/μs
Reverse Recovery Charge
QRR
nC
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in2 copper pad of FR4 board
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-142.B
www.unisonic.com.tw
UTD410
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance vs. Gate-Source Voltage
Body-Diode Characteristics
190
170
150
130
1.0E+01
1.0E+00
1.0E-01
ID=8A
1.0E-02
1.0E-03
1.0E-04
110
90
125℃
125℃
25℃
70
25℃
50
1.0E-05
1.0E-06
30
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
3
4
6
8
10
Source-Drain Voltage, VSD (V)
Gate-Source Voltage, VGS (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-142.B
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UTD410
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
Gate-Charge Characteristics
1400
1200
1000
10
8
VDS=15V
ID=8A
CISS
6
800
600
400
4
CRSS
2
200
0
COSS
0
0
2
4
8
6
0
5
10
15
20
25
30
Total Gate Charge, Qg (nC)
Drain-Source Voltage, VDS (V)
Normalized Maximum Transient Thermal Impedance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
PD
0.1
TON
T
Single Pulse
0.01
0.01
0.0001
0.1
1
10
100
1000
0.001
0.00001
Pulse Width (s)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-142.B
www.unisonic.com.tw
UTD410
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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