KC817-25 [TYSEMI]
For general AF applications, High collector current; 对于一般自动对焦的应用，高集电极电流
| 型号： | KC817-25 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | For general AF applications, High collector current |
| 文件： | 总1页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
C817-25
K
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
■ Features
3
● For general AF applications.
● High collector current.
● High current gain.
1
2
+0.1
+0.05
0.95-0.1
0.1-0.01
● Low collector-emitter saturation voltage
+0.1
1.9-0.1
● Complementary types:
(PNP)
KC807
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
power dissipation
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
50
45
V
5
500
V
mA
A
ICM
1
PD
300
mW
℃
℃
Junction temperature
Storage temperature
Tj
150
Tstg
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
Test conditions
IC = 10 μA, IE = 0
Min
50
45
5
Typ Max
Unit
V
V(BR)CBO
V(BR)CEO IC = 10 mA, IB = 0
V
V(BR)EBO
ICBO
V
IE = 10μA, IC = 0
VCB = 45 V, IE = 0
VEB =5 V , IC = 0
Collector cutoff current
Emitter cutoff current
100
100
400
nA
nA
IEBO
VCE = 1 V,IC = 100 mA
VCE = 1 V,IC = 500 mA
160
40
DC current gain *
hFE
Collector saturation voltage *
Base to emitter voltage *
VCE(sat) IC = 500 mA, IB = 50 mA
VBE(sat) IC = 500 mA, IB = 50 mA
0.7
V
V
1.2
10
Collector-base capacitance
Transition frequency
COb
fT
VCB = 10 V, f = 1 MHz
IC =10 m A, VCE = 5 V, f = 100 MHz
pF
100
MHz
* Pulsed: PW ≤ 350 μs, duty cycle ≤ 2%
■ Marking
Marking
6BW
1
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4008-318-123
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