KC818 [KEXIN]
NPN Silicon AF Transistors; NPN硅晶体管自动对焦
| 型号： | KC818 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Silicon AF Transistors |
| 文件： | 总1页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Silicon AF Transistors
KC818(BC818)
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
For general AF applications.
High collector current.
High current gain.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
Low collector-emitter saturation voltage.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
30
25
5
V
V
800
mA
mW
PD
310
Junction temperature
Storage temperature
Tj
150
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
30
25
5
Typ
Max
Unit
V
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
VCBO
VCEO
IC = 10 A,VBE = 0
IC = 10 mA, IB = 0
V
V
IE = 10 A, IC = 0
VCB =25 V, VBE= 0
VEB =4 V, IC = 0
VEBO
ICES
Collector cutoff current
Emitter cutoff current
100
100
630
nA
nA
IEBO
IC =100 mA, VCE =1 V
100
60
DC current gain *
hFE
IC =300 mA, VCE =1 V
Collector saturation voltage *
Base emitter on voltage
VCE(sat) IC =500 mA, IB = 50 mA
VBE(on) VCE=1V,IC=300mA
0.7
1.2
12
V
V
Output Capacitance
Transition frequency
Cob
fT
VCB=10V,f=1MHz
IC = 10 mA, VCE =5 V, f = 50 MHz
pF
100
MHz
* Pulsed: PW
350 ìs, duty cycle
2%
Marking
NO.
Marking
hFE
KC818-16
8GA
KC818-25
8GB
KC818-40
8GC
100 250
160 400
250 630
1
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