KC817W [KEXIN]
NPN Silicon AF Transistors; NPN硅晶体管自动对焦
| 型号： | KC817W |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Silicon AF Transistors |
| 文件： | 总1页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Silicon AF Transistors
KC817W
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
50
45
V
5
500
V
mA
A
ICM
1
IB
100
mA
mW
power dissipation
PD
250
Junction temperature
Storage temperature
Tj
150
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Symbol
VCBO
Testconditons
IC = 10 A, IE = 0
Min
50
45
5
Typ
Max
Unit
V
VCEO
IC = 10 mA, IB = 0
V
V
IE = 10 A, IC = 0
VCB = 25 V, IE = 0
VEBO
ICBO
100
50
nA
A
Collector cutoff current
Emitter cutoff current
VCB = 25 V, IE = 0 , TA = 150
VEB = 4 V, IC = 0
IEBO
hFE
100
250
400
630
0.7
1.2
nA
KC817-16W
100
160
250
160
250
350
DC current gain *
IC = 100 mA, VCE = -1 V
KC817-25W
KC817-40W
Collector saturation voltage *
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
VCE(sat) IC = 500 mA, IB = 50 mA
VBE(sat) IC = 500 mA, IB = 50 mA
V
V
CCb
Ceb
fT
VCB = 10 V, f = 1 MHz
6
pF
VEB = 0.5 V, f = 1 MHz
60
pF
IC = 50 mA, VCE = 5 V, f = 100 MHz
170
MHz
* Pulsed: PW
350 ìs, duty cycle
2%
Marking
NO.
KC817-16W
6A
KC817-25W
6B
KC817-40W
6C
Marking
1
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